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41. 发明授权

US06486954B1 Overlay alignment measurement mark 有权
标题翻译：覆盖对齐测量标记
公开(公告)号：US06486954B1
公开(公告)日：2002-11-26
申请号：US09654318
申请日：2000-09-01
申请人： Walter Dean Mieher , Ady Levy
发明人： Walter Dean Mieher , Ady Levy
IPC分类号： G01B1127
CPC分类号： G03F7/70633 , G01B11/002
摘要： An alignment mark comprising a first test zone and a second test zone for measuring the relative position between different layers of a semiconductor device. The alignment mark is used to determine the overlay error between layers of a semiconductor wafer while minimizing measurement inaccuracies caused by semiconductor manufacturing processes. The first test zone includes two sections, one in which test structures are formed on one layer and a second in which test structures are formed on a second layer. Each of these test structures is composed of smaller sub-structures. The second test zone includes two similar sections that are also composed of smaller sub-structures. The first and second test zones are configured so that the section of each test zone formed one layer is adjacent to the section of the other test zone that is formed on the other layer. By forming each of the periodic structures with smaller sized sub-structures, a more accurate measurement of any alignment error may be obtained. Another aspect of the present invention pertains to a method of utilizing the alignment mark so that an overlay measurement may be obtained.
摘要翻译：对准标记包括第一测试区和第二测试区，用于测量半导体器件的不同层之间的相对位置。对准标记用于确定半导体晶片的层之间的重叠误差，同时最小化由半导体制造工艺引起的测量不准确。第一测试区包括两个部分，一个测试结构形成在一个层上，另一个测试结构形成在第二层上。这些测试结构中的每一个都由较小的子结构组成。第二测试区域包括两个类似的部分，它们也由较小的子结构组成。第一和第二测试区被配置成使得形成一层的每个测试区的部分与形成在另一层上的另一测试区的部分相邻。通过用较小尺寸的子结构形成每个周期性结构，可以获得任何对准误差的更准确的测量。本发明的另一方面涉及一种利用对准标记以便可以获得覆盖测量的方法。

42. 发明授权

US07826071B2 Parametric profiling using optical spectroscopic systems 有权
标题翻译：使用光谱系统进行参数分析
公开(公告)号：US07826071B2
公开(公告)日：2010-11-02
申请号：US11868740
申请日：2007-10-08
申请人： Andrei V. Shchegrov , Anatoly Fabrikant , Mehrdad Nikoonahad , Ady Levy , Daniel C. Wack , Noah Bareket , Walter Mieher , Ted Dziura
发明人： Andrei V. Shchegrov , Anatoly Fabrikant , Mehrdad Nikoonahad , Ady Levy , Daniel C. Wack , Noah Bareket , Walter Mieher , Ted Dziura
IPC分类号： G01B11/14
CPC分类号： G03F7/70616 , G01N21/211 , G01N21/47 , G01N21/4788 , G01N21/9501 , G01N21/956 , G01N21/95607 , G01N2021/213 , G03F7/70625 , G03F7/70641
摘要： A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.
摘要翻译：构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便达到参数的值。也可以考虑在周期性结构之上或之下的膜层。可以使用诸如反射率Rs，Rp和椭偏参数的不同辐射参数来测量衍射结构和相关膜。一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。

43. 发明申请

US20100235114A1 SYSTEMS AND METHODS FOR DETERMINING ONE OR MORE CHARACTERISTICS OF A SPECIMEN USING RADIATION IN THE TERAHERTZ RANGE 审中-公开
标题翻译：用于确定在TERAHERTZ范围内使用辐射的样本的一个或多个特征的系统和方法
公开(公告)号：US20100235114A1
公开(公告)日：2010-09-16
申请号：US12401029
申请日：2009-03-10
申请人： Ady Levy , Samuel Ngai , Christopher F. Bevis , Stefano Concina , John Fielden , Walter Mieher , Dieter Mueller , Neil Richardson , Dan Wack , Larry Wagner
发明人： Ady Levy , Samuel Ngai , Christopher F. Bevis , Stefano Concina , John Fielden , Walter Mieher , Dieter Mueller , Neil Richardson , Dan Wack , Larry Wagner
IPC分类号： G06F19/00 , G01N21/47 , G01N21/59 , G01N21/55
CPC分类号： G01N21/9505 , G01N21/3581 , H01L22/12
摘要： Systems and methods for determining one or more characteristics of a specimen using radiation in the terahertz range are provided. One system includes an illumination subsystem configured to illuminate the specimen with radiation. The system also includes a detection subsystem configured to detect radiation propagating from the specimen in response to illumination of the specimen and to generate output responsive to the detected radiation. The detected radiation includes radiation in the terahertz range. In addition, the system includes a processor configured to determine the one or more characteristics of the specimen using the output.
摘要翻译：提供了使用太赫兹范围内的辐射来确定样本的一个或多个特征的系统和方法。一个系统包括被配置为用辐射照射样本的照明子系统。该系统还包括检测子系统，该检测子系统被配置为响应于样本的照射来检测从样本传播的辐射，并响应于检测到的辐射产生输出。检测到的辐射包括太赫兹范围内的辐射。另外，该系统包括配置成使用该输出来确定样本的一个或多个特性的处理器。

44. 发明申请

US20090291513A1 OVERLAY MARKS, METHODS OF OVERLAY MARK DESIGN AND METHODS OF OVERLAY MEASUREMENTS 有权
标题翻译： OVERLAY MARKS，OVERLAY MARK设计方法和覆盖测量方法
公开(公告)号：US20090291513A1
公开(公告)日：2009-11-26
申请号：US12533295
申请日：2009-07-31
申请人： Mark Ghinovker , Michael Adel , Walter Dean Mieher , Ady Levy , Dan Wack
发明人： Mark Ghinovker , Michael Adel , Walter Dean Mieher , Ady Levy , Dan Wack
IPC分类号： H01L21/66 , H01L23/544
CPC分类号： G03F7/70633 , G03F9/7076 , G06K9/00281 , G06T7/0004 , G06T7/33 , G06T2207/30148 , Y10S438/975
摘要： An overlay mark for determining the relative shift between two or more successive layers of a substrate and methods for using such overlay mark are disclosed. In one embodiment, the overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.
摘要翻译：公开了用于确定衬底的两个或更多个连续层之间的相对位移的覆盖标记以及使用这种重叠标记的方法。在一个实施例中，覆盖标记包括至少一个测试图案，用于在第一方向上确定基板的第一和第二层之间的相对移动。测试模式包括第一组工作区和第二组工作区。第一组工作区域设置在基板的第一层上，并且具有相对于彼此对角地相对且空间上偏移的至少两个工作区域。所述第二组工作区域设置在所述基板的第二层上，并且具有相对于彼此斜对置且空间偏移的至少两个工作区域。第一组工作区域通常相对于第二组工作区域成角度，从而形成“X”形测试图案。

45. 发明授权

US07385699B2 Apparatus and methods for detecting overlay errors using scatterometry 有权
公开(公告)号：US07385699B2
公开(公告)日：2008-06-10
申请号：US10785396
申请日：2004-02-23
申请人： Walter D. Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael E. Adel , Anatoly Fabrikant , Christopher F. Bevis , Mark Ghinovker
发明人： Walter D. Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael E. Adel , Anatoly Fabrikant , Christopher F. Bevis , Mark Ghinovker
IPC分类号： G01B11/00
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed is a method for determining an overlay error between at least two layers in a multiple layer sample. An imaging optical system is used to measure a plurality of measured optical signals from a plurality of periodic targets on the sample. The targets each have a first structure in a first layer and a second structure in a second layer. There are predefined offsets between the first and second structures. A scatterometry overlay technique is then used to analyze the measured optical signals of the periodic targets and the predefined offsets of the first and second structures of the periodic targets to thereby determine an overlay error between the first and second structures of the periodic targets.

46. 发明申请

US20080023855A1 OVERLAY MARKS, METHODS OF OVERLAY MARK DESIGN AND METHODS OF OVERLAY MEASUREMENTS 有权
标题翻译： OVERLAY MARKS，OVERLAY MARK设计方法和覆盖测量方法
公开(公告)号：US20080023855A1
公开(公告)日：2008-01-31
申请号：US11830782
申请日：2007-07-30
申请人： Mark Ghinovker , Michael Adel , Walter Mieher , Ady Levy , Dan Wack
发明人： Mark Ghinovker , Michael Adel , Walter Mieher , Ady Levy , Dan Wack
IPC分类号： H01L23/544
CPC分类号： G03F7/70633 , G03F9/7076 , G06K9/00281 , G06T7/0004 , G06T7/33 , G06T2207/30148 , Y10S438/975
摘要： An overlay mark for determining the relative shift between two or more successive layers of a substrate is disclosed. The overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.
摘要翻译：公开了用于确定衬底的两个或更多个连续层之间的相对位移的重叠标记。覆盖标记包括至少一个测试图案，用于确定在第一方向上的基板的第一和第二层之间的相对移动。测试模式包括第一组工作区和第二组工作区。第一组工作区域设置在基板的第一层上，并且具有相对于彼此对角地相对且空间上偏移的至少两个工作区域。所述第二组工作区域设置在所述基板的第二层上，并且具有相对于彼此斜对置且空间偏移的至少两个工作区域。第一组工作区域通常相对于第二组工作区域成角度，从而形成“X”形测试图案。

47. 发明授权

US07317531B2 Apparatus and methods for detecting overlay errors using scatterometry 有权
标题翻译：使用散射法检测重叠误差的装置和方法
公开(公告)号：US07317531B2
公开(公告)日：2008-01-08
申请号：US10729838
申请日：2003-12-05
申请人： Walter D. Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Kenneth P. Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
发明人： Walter D. Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Kenneth P. Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
IPC分类号： G01B11/00 , G01J4/00 , G01N21/00
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample is disclosed. Targets A, B, C and D that each include a portion of the first and second structures are provided. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb between its first and second structures portions; target C is designed to have an offset Xc between its first and second structures portions; and target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd. The targets A, B, C and D are illuminated with electromagnetic radiation to obtain spectra SA, SB, SC, and SD from targets A, B, C, and D, respectively. Any overlay error between the first structures and the second structures is then determined using a linear approximation based on the obtained spectra SA, SB, SC, and SD.
摘要翻译：公开了用于确定样品的两层之间的重叠误差的技术，装置和目标。在一个实施例中，公开了一种用于确定样品的第一层中的多个第一结构与样品的第二层中的多个第二结构之间的叠层的方法。提供了各自包括第一和第二结构的一部分的目标A，B，C和D。目标A设计成在其第一和第二结构部分之间具有偏移Xa; 目标B设计成在其第一和第二结构部分之间具有偏移Xb; 目标C被设计成在其第一和第二结构部分之间具有偏移Xc; 并且目标D被设计成在其第一和第二结构部分之间具有偏移Xd。偏移量Xa，Xb，Xc和Xd中的每一个优选地不同于零; Xa是相反的符号，不同于Xb; Xc是相反的符号，与Xd不同。目标A，B，C和D用电磁辐射照射，以获得光谱S A，B，C，S和S，分别来自目标A，B，C和D的SUB> D

48. 发明授权

US07280212B2 Apparatus and methods for detecting overlay errors using scatterometry 有权
标题翻译：使用散射法检测重叠误差的装置和方法
公开(公告)号：US07280212B2
公开(公告)日：2007-10-09
申请号：US10785723
申请日：2004-02-23
申请人： Walter D. Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael E. Adel , Mark Ghinovker , John Fielden , Noah Bareket
发明人： Walter D. Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael E. Adel , Mark Ghinovker , John Fielden , Noah Bareket
IPC分类号： G01B11/00
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For each of a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, a first optical signal is measured using a first ellipsometer or a first reflectometer and a second optical signal is measured using a second ellipsometer or a second reflectometer. There are predefined offsets between the first and second structures. An overlay error is determined between the first and second structures by analyzing the measured first and second optical signals from the periodic targets using a scatterometry overlay technique based on the predefined offsets.
摘要翻译：公开了一种确定多层样本的两层之间的覆盖误差的方法。对于每个具有由第一层形成的第一结构和由第二层样品形成的第二结构的多个周期性目标中的每一个，使用第一椭偏仪或第一反射计和第二光学器件测量第一光信号使用第二椭偏仪或第二反射计测量信号。在第一和第二结构之间有预定义的偏移。通过使用基于预定义的偏移的散射测量覆盖技术来分析来自周期性目标的测量的第一和第二光学信号，在第一和第二结构之间确定覆盖误差。

49. 发明授权

US07242477B2 Apparatus and methods for detecting overlay errors using scatterometry 有权
标题翻译：使用散射法检测重叠误差的装置和方法
公开(公告)号：US07242477B2
公开(公告)日：2007-07-10
申请号：US10785430
申请日：2004-02-23
申请人： Walter D. Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael E. Adel , Mark Ghinovker , Christopher F. Bevis , Noam Knoll , Moshe Baruch
发明人： Walter D. Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael E. Adel , Mark Ghinovker , Christopher F. Bevis , Noam Knoll , Moshe Baruch
IPC分类号： G01B11/00
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed is a method for determining an overlay error between at least two layers in a multiple layer sample. A sample having a plurality of periodic targets that each have a first structure in a first layer and a second structure in a second layer is provided. There are predefined offsets between the first and second structures. Using a scatterometry overlay metrology, scatterometry overlay data is obtained from a first set of the periodic targets based on one or more measured optical signals from the first target set on the sample. Using an imaging overlay metrology, imaging overlay data is obtained from a second set of the periodic targets based on one or more image(s) from the second target set on the sample.
摘要翻译：公开了一种用于确定多层样品中至少两层之间的覆盖误差的方法。提供具有多个周期性靶的样品，每个周期性靶在第一层中具有第一结构，在第二层中具有第二结构。在第一和第二结构之间有预定义的偏移。使用散射测绘重叠测量，基于来自样品上的第一目标组的一个或多个测量光信号，从第一组周期性目标获得散点测绘覆盖数据。使用成像覆盖度量，基于来自样品上的第二目标集的一个或多个图像，从第二组周期性目标获得成像覆盖数据。

50. 发明授权

US07139083B2 Methods and systems for determining a composition and a thickness of a specimen 有权
公开(公告)号：US07139083B2
公开(公告)日：2006-11-21
申请号：US09956834
申请日：2001-09-20
申请人： John Fielden , Ady Levy , Kyle A. Brown , Gary Bultman , Mehrdad Nikoonahad , Dan Wack
发明人： John Fielden , Ady Levy , Kyle A. Brown , Gary Bultman , Mehrdad Nikoonahad , Dan Wack
IPC分类号： G01B11/28
CPC分类号： G03F7/70708 , G01N21/211 , G01N21/47 , G01N21/55 , G01N21/636 , G01N21/64 , G01N21/94 , G01N21/9501 , G01N21/9503 , G01N21/956 , G01N2021/646 , G01N2021/8825 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F7/7065 , G03F7/70658 , G03F7/707 , H01J2237/31701 , H01L22/12 , H01L2924/0002 , Y10T117/1004 , H01L2924/00
摘要： Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a composition and a thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

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