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41. 发明授权

US07161169B2 Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain 有权
标题翻译：在双轴压缩应变下，增强了<110> Si中的电子和空穴迁移率
公开(公告)号：US07161169B2
公开(公告)日：2007-01-09
申请号：US10980220
申请日：2004-11-03
申请人： Victor Chan , Massimo V. Fischetti , John M. Hergenrother , Meikei Leong , Rajesh Rengarajan , Alexander Reznicek , Paul M. Solomon , Chun-yung Sung , Min Yang
发明人： Victor Chan , Massimo V. Fischetti , John M. Hergenrother , Meikei Leong , Rajesh Rengarajan , Alexander Reznicek , Paul M. Solomon , Chun-yung Sung , Min Yang
IPC分类号： H01L29/06 , H01L31/0328
CPC分类号： H01L29/7842 , H01L21/823807 , H01L29/045 , H01L29/6659 , H01L29/7833 , H01L29/7843 , H01L29/7846 , H01L29/78684
摘要： The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a crystal orientation and a biaxial compressive strain. The term “biaxial compressive stress” is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing layer; and creating a biaxial strain in the silicon-containing layer.
摘要翻译：本发明提供了具有增强的电子和空穴迁移率的半导体材料，其包含具有<110>晶体取向和双轴压缩应变的含Si层。本文中使用的术语“双轴压应力”来描述在制造半导体材料期间由含Si层引起的纵向压应力和横向应力引起的净应力。本发明的另一方面涉及形成本发明的半导体材料的方法。本发明的方法包括提供含硅<110>层的步骤; 并在含硅<110>层中产生双轴应变。

42. 发明申请

US20060074806A1 Managing a virtual persona through selective association 失效
公开(公告)号：US20060074806A1
公开(公告)日：2006-04-06
申请号：US10953990
申请日：2004-09-29
申请人： Ross McKegney , Darshanand Khusial , Lev Mirlas , Victor Chan
发明人： Ross McKegney , Darshanand Khusial , Lev Mirlas , Victor Chan
IPC分类号： H04K1/00 , H04L9/00 , G06Q99/00
CPC分类号： G06Q10/10 , G06F19/00 , G06Q30/0601 , G06Q50/24
摘要： A technique is provided to generally provide user support across multiple accounts by allowing a single person or user to represent multiple organizations. An embodiment may typically provide support for a user to act on behalf of an account in the form of a virtual persona and also to provide the ability to manage the assignment of access rights allowing only prescribed privileged users to act on behalf of an account. This may then be accomplished through registration of a single identity for the user or person on the system, while allowing that person to then select the desired organization to represent for a particular session (which will be stored in the user's session).

43. 发明申请

US20060040497A1 Material for contact etch layer to enhance device performance 审中-公开
标题翻译：用于接触蚀刻层的材料以增强器件性能
公开(公告)号：US20060040497A1
公开(公告)日：2006-02-23
申请号：US11253622
申请日：2005-10-20
申请人： Ashima Chakravarti , Shreesh Narasimha , Victor Chan , Judson Holt , Satya Chakravarti
发明人： Ashima Chakravarti , Shreesh Narasimha , Victor Chan , Judson Holt , Satya Chakravarti
IPC分类号： H01L21/44
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02271 , H01L21/02274 , H01L21/3185 , H01L29/7843
摘要： Stress level of a nitride film is adjusted as a function of two or more of the following: identity of a starting material precursor used to make the nitride film; identity of a nitrogen-containing precursor with which is treated the starting material precursor; ratio of the starting material precursor to the nitrogen-containing precursor; a set of CVD conditions under which the film is grown; and/or a thickness to which the film is grown. A rapid thermal chemical vapor deposition (RTCVD) film produced by reacting a compound containing silicon, nitrogen and carbon (such as bis-tertiary butyl amino silane (BTBAS)) with NH3 can provide advantageous properties, such as high stress and excellent performance in an etch-stop application. An ammonia-treated BTBAS film is particularly excellent in providing a high-stress property, and further having maintainability of that high-stress property over repeated annealing.
摘要翻译：氮化膜的应力水平作为以下两个或更多个的函数来调节：用于制造氮化物膜的原料前体的同一性; 同时处理起始原料前体的含氮前体; 原料前体与含氮前体的比例; 电影种植的一系列CVD条件; 和/或薄膜生长的厚度。通过使含有硅，氮和碳（例如双叔丁基氨基硅烷（BTBAS））的化合物与NH 3 N 3反应制备的快速热化学气相沉积（RTCVD）膜可以提供有利的性质，例如在蚀刻停止应用中作为高应力和优异的性能。氨处理的BTBAS膜在提供高应力性能方面特别优异，并且在反复退火时还具有高应力性能的可维护性。

44. 发明授权

US06985899B2 Method and system for composing a query for a database and traversing the database 有权
公开(公告)号：US06985899B2
公开(公告)日：2006-01-10
申请号：US09996127
申请日：2001-11-27
申请人： Victor Chan , Fen Wang , Mark W. Hubbard
发明人： Victor Chan , Fen Wang , Mark W. Hubbard
IPC分类号： G06F17/30
CPC分类号： G06F17/30433 , G06F17/30477 , Y10S706/922 , Y10S707/99933 , Y10S707/99934 , Y10S707/99935 , Y10S707/99936 , Y10S707/99943 , Y10S707/99945
摘要： A system and method of composing a query object for application against a database is provided. The method composes a selection clause for the query. Next, a criteria clause for the query is generated, with the criteria clause comprising input criteria related to the query, additional criteria specified against the query, and generated criteria based on a joint relationship. Next a source clause utilizing elements in the database accessed by the query is generated. A database traversal system and method is provided. The method identifies all tables directly accessible by each table and creates a data structure comprising an entry for each table. The entry comprises an identification field for each table and a link field identifying all tables directly accessible by each table. The data structure is traversed and an optimum path of the traversal paths utilizing data obtained from traversing the data structure is identified.

45. 发明申请

US20050245081A1 Material for contact etch layer to enhance device performance 失效
标题翻译：用于接触蚀刻层的材料以增强器件性能
公开(公告)号：US20050245081A1
公开(公告)日：2005-11-03
申请号：US10835949
申请日：2004-04-30
申请人： Ashima Chakravarti , Shreesh Narasimha , Victor Chan , Judson Holt , Satya Chakravarti
发明人： Ashima Chakravarti , Shreesh Narasimha , Victor Chan , Judson Holt , Satya Chakravarti
IPC分类号： H01L21/768 , C23C16/34 , H01L21/318 , H01L21/469 , H01L29/78
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02271 , H01L21/02274 , H01L21/3185 , H01L29/7843
摘要： Stress level of a nitride film is adjusted as a function of two or more of the following: identity of a starting material precursor used to make the nitride film; identity of a nitrogen-containing precursor with which is treated the starting material precursor; ratio of the starting material precursor to the nitrogen-containing precursor; a set of CVD conditions under which the film is grown; and/or a thickness to which the film is grown. A rapid thermal chemical vapor deposition (RTCVD) film produced by reacting a compound containing silicon, nitrogen and carbon (such as bis-tertiary butyl amino silane (BTBAS)) with NH3 can provide advantageous properties, such as high stress and excellent performance in an etch-stop application. An ammonia-treated BTBAS film is particularly excellent in providing a high-stress property, and further having maintainability of that high-stress property over repeated annealing.
摘要翻译：氮化膜的应力水平作为以下两个或更多个的函数来调节：用于制造氮化物膜的原料前体的同一性; 同时处理起始原料前体的含氮前体; 原料前体与含氮前体的比例; 电影种植的一系列CVD条件; 和/或薄膜生长的厚度。通过使含有硅，氮和碳（例如双叔丁基氨基硅烷（BTBAS））的化合物与NH 3 N 3反应制备的快速热化学气相沉积（RTCVD）膜可以提供有利的性质，例如在蚀刻停止应用中作为高应力和优异的性能。氨处理的BTBAS膜在提供高应力性能方面特别优异，并且在反复退火时还具有高应力性能的可维护性。

46. 发明申请

US20050219418A1 Dynamic cross fading method and apparatus 失效
标题翻译：动态交叉衰落方法和装置
公开(公告)号：US20050219418A1
公开(公告)日：2005-10-06
申请号：US10818408
申请日：2004-04-05
申请人： Victor Chan , Raymond Chow
发明人： Victor Chan , Raymond Chow
IPC分类号： G06T3/00 , G09G5/00 , G09G5/36 , G09G5/39 , H04N5/262 , H04N5/265 , H04N9/74
CPC分类号： H04N9/74 , H04N5/265
摘要： Provided is a method and apparatus for dynamic cross fading. Specifically, an embedded system can display an image produced from a blend of other images. Initially, a first image and a second image are stored in a buffer in a display controller. Then, the display controller extracts pixels from corresponding locations in the first image and the second image. The pixels are combined with weights associated with each image to perform the cross fade calculation. Consequently, the result from the cross fade calculation is transmitted to a display unit connected to the display controller for viewing. The result can also be fetched during a refresh of a panel in the display unit. In either case, the result is transmitted to a display pipe during dynamic cross fading. Thus, any images stored in the buffer remain unchanged.
摘要翻译：提供了一种用于动态交叉衰落的方法和装置。具体来说，嵌入式系统可以显示从其他图像的混合产生的图像。最初，将第一图像和第二图像存储在显示控制器中的缓冲器中。然后，显示控制器从第一图像和第二图像中的相应位置提取像素。将像素与与每个图像相关联的权重组合以执行交叉淡入淡出计算。因此，交叉淡入淡出计算的结果被发送到与显示控制器连接的显示单元进行观看。结果还可以在刷新显示单元中的面板时获取。在任一情况下，在动态交叉衰落期间将结果传输到显示管道。因此，存储在缓冲器中的任何图像保持不变。

47. 发明授权

US06948002B2 Method and system for a computer system to support various communication devices 失效
标题翻译：一种用于支持各种通信设备的计算机系统的方法和系统
公开(公告)号：US06948002B2
公开(公告)日：2005-09-20
申请号：US10010887
申请日：2001-12-07
申请人： Victor Chan , Kit Yin Madelaine Fok , Mark W. Hubbard
发明人： Victor Chan , Kit Yin Madelaine Fok , Mark W. Hubbard
IPC分类号： G06F3/14 , G06Q30/00 , G06F15/16
CPC分类号： H04L67/303 , G06Q30/06 , H04L29/06 , H04L67/02 , H04L69/329
摘要： A system method of interfacing a computer system executing commercial transactions initiated from communication devices, each communication device having a display, with custom display parameters, is provided. For the system and method, at the computer system, for each device, a command is received and translated into a common format command. The common format command is executed and results therefrom are received. A database is accessed having elements identifying sets of display parameters, one set of the sets is for use with the custom display parameters. One set of display parameters is retrieved from the database.
摘要翻译：提供了一种系统方法，用于连接执行从通信设备发起的商业交易的计算机系统，具有显示器的每个通信设备具有自定义显示参数。对于系统和方法，在计算机系统中，对于每个设备，接收命令并将其转换为通用格式命令。执行通用格式命令，并接收其结果。访问具有识别显示参数集的元素的数据库，一组集合用于定制显示参数。从数据库中检索一组显示参数。

48. 发明申请

US20050194596A1 Increasing carrier mobility in NFET and PFET transistors on a common wafer 有权
公开(公告)号：US20050194596A1
公开(公告)日：2005-09-08
申请号：US11110767
申请日：2005-04-21
申请人： Victor Chan , Haining Yang
发明人： Victor Chan , Haining Yang
IPC分类号： H01L21/8238 , H01L27/092 , H01L29/10
CPC分类号： H01L29/7843 , H01L21/823807 , H01L21/823828 , H01L27/092
摘要： Enhanced carrier mobility in transistors of differing (e.g. complementary) conductivity types is achieved on a common chip by provision of two or more respective stressed layers, such as etch stop layers, overlying the transistors with stress being wholly or partially relieved in portions of the respective layers, preferably by implantations with heavy ions such as germanium, arsenic, xenon, indium, antimony, silicon, nitrogen oxygen or carbon in accordance with a block-out mask. The distribution and small size of individual areas of such stressed structures also prevents warping or curling of even very thin substrates.

49. 发明申请

US20050001290A1 SUBSTRATE ENGINEERING FOR OPTIMUM CMOS DEVICE PERFORMANCE 有权
标题翻译：用于最佳CMOS器件性能的基板工程
公开(公告)号：US20050001290A1
公开(公告)日：2005-01-06
申请号：US10604003
申请日：2003-06-20
申请人： Victor Chan , Meikei Leong , Min Yang
发明人： Victor Chan , Meikei Leong , Min Yang
IPC分类号： H01L21/8238 , H01L29/76
CPC分类号： H01L21/823807
摘要： An integrated semiconductor structure having different types of complementary metal oxide semiconductor devices (CMOS), i.e., PFETs and NFETs, located atop a semiconductor substrate, wherein each CMOS device is fabricated such that the current flow for each device is optimal is provided. Specifically, the structure includes a semiconductor substrate that has a (110) surface orientation and a notch pointing in a direction of current flow; and at least one PFET and at least one NFET located on the semiconductor substrate. The at least one PFET has a current flow in a direction and the at least one NFET has a current flow in a direction. The direction is perpendicular to the direction. A method of fabricating such as integrated semiconductor structure is also provided.
摘要翻译：提供了位于半导体衬底顶部的具有不同类型的互补金属氧化物半导体器件（CMOS）即PFET和NFET的集成半导体结构，其中每个CMOS器件被制造成使得每个器件的电流是最佳的。具体地，该结构包括具有（110）表面取向的半导体衬底和指向电流<001>方向的凹口; 以及位于半导体衬底上的至少一个PFET和至少一个NFET。所述至少一个PFET具有沿<110>方向的电流，并且所述至少一个NFET具有沿<100>方向的电流。 <110>方向垂直于<100>方向。还提供了诸如集成半导体结构的制造方法。

50. 发明授权

US5999299A Laser communication device 失效
标题翻译：激光通讯装置
公开(公告)号：US5999299A
公开(公告)日：1999-12-07
申请号：US79377
申请日：1998-05-14
申请人： Victor Chan , Michael Rivers , James Menders , Scott Bloom
发明人： Victor Chan , Michael Rivers , James Menders , Scott Bloom
IPC分类号： G02B5/30 , H01S3/00 , H04B10/10 , H04B10/105 , H04B10/22 , H04B10/00
CPC分类号： H04B10/11 , H04B10/1143 , H04B10/118
摘要： A laser communication device for transmitting and receiving information imposed on laser beams. A transmitting unit and a receiving unit are implemented based on atomic line filters. The transmitting unit includes a compact tunable laser locked to a selected atomic transition line. Information may be imposed on a laser beam by modulating the frequency thereof while maintaining its output power substantially unchanged.
摘要翻译：一种激光通信装置，用于发送和接收施加在激光束上的信息。基于原子线滤波器实现发送单元和接收单元。发射单元包括锁定到所选原子跃迁线的紧凑型可调谐激光器。信号可以通过调制其频率同时保持其输出功率基本上不变而施加在激光束上。

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