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    • 41. 发明授权
    • LED structure
    • LED结构
    • US08338848B2
    • 2012-12-25
    • US13214725
    • 2011-08-22
    • Ghulam HasnainSteven D. Lester
    • Ghulam HasnainSteven D. Lester
    • H01L33/46H01L33/52H01L33/60
    • H01L33/46H01L33/22H01L33/382H01L33/405H01L33/44
    • A light emitting device, a wafer for making the same, and method for fabricating the same are disclosed. The device and wafer include a first layer of a first conductivity type, an active layer, and a layer of a second conductivity type. The active layer overlies the first layer, the active layer generating light. The second layer overlies the active layer, the second layer having a first surface in contact adjacent to the active layer and a second surface having a surface that includes features that scatter light striking the second surface. A layer of transparent electrically conducting material is adjacent to the second surface and covered by a first layer of a dielectric material that is transparent to the light generated by the active layer. A mirror layer that has a reflectivity greater than 90 percent is deposited on the first layer of dielectric material.
    • 公开了一种发光器件,用于制造它的晶片及其制造方法。 器件和晶片包括第一导电类型的第一层,有源层和第二导电类型的层。 有源层覆盖第一层,有源层产生光。 第二层覆盖有源层,第二层具有邻近有源层的接触的第一表面和具有散射射入第二表面的光的表面的第二表面。 一层透明的导电材料与第二表面相邻并被由对活性层产生的光透明的电介质材料的第一层覆盖。 反射率大于90%的镜面层沉积在第一层电介质材料上。
    • 42. 发明授权
    • Series connected segmented LED
    • 串联连接分段LED
    • US08207543B2
    • 2012-06-26
    • US13049492
    • 2011-03-16
    • Ghulam Hasnain
    • Ghulam Hasnain
    • H01L33/00
    • H01L27/153H01L33/385H01L33/44H01L33/62H01L2924/0002H01L2924/00
    • A light source and method for making the same are disclosed. The light source includes a substrate, and a light emitting structure that is divided into segments. The light emitting structure includes a first layer of semiconductor material of a first conductivity type deposited on the substrate, an active layer overlying the first layer, and a second layer of semiconductor material of an opposite conductivity type from the first conductivity type overlying the active layer. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first layer in the first segment to the second layer in the second segment. A power contact is electrically connected to the second layer in the first segment, and a second power contact is electrically connected to the first layer in the second segment.
    • 公开了一种光源及其制造方法。 光源包括基板和被分割成段的发光结构。 发光结构包括沉积在衬底上的第一导电类型的第一层半导体材料,覆盖第一层的有源层和覆盖有源层的第一导电类型的相反导电类型的第二半导体材料层 。 障碍物将发光结构分成彼此电隔离的第一和第二段。 串联连接电极将第一段中的第一层连接到第二段中的第二层。 电源触头与第一段中的第二层电连接,第二电源触点电连接到第二段中的第一层。
    • 44. 发明申请
    • LED Structure
    • LED结构
    • US20110303942A1
    • 2011-12-15
    • US13214725
    • 2011-08-22
    • Ghulam HasnainSteven D. Lester
    • Ghulam HasnainSteven D. Lester
    • H01L33/60
    • H01L33/46H01L33/22H01L33/382H01L33/405H01L33/44
    • A light emitting device, a wafer for making the same, and method for fabricating the same are disclosed. The device and wafer include a first layer of a first conductivity type, an active layer, and a layer of a second conductivity type. The active layer overlies the first layer, the active layer generating light. The second layer overlies the active layer, the second layer having a first surface in contact adjacent to the active layer and a second surface having a surface that includes features that scatter light striking the second surface. A layer of transparent electrically conducing material is adjacent to the second surface and covered by a first layer of a dielectric material that is transparent to the light generated by the active layer. A mirror layer that has a reflectivity greater than 90 percent is deposited on the first layer of dielectric material.
    • 公开了一种发光器件,用于制造它的晶片及其制造方法。 器件和晶片包括第一导电类型的第一层,有源层和第二导电类型的层。 有源层覆盖第一层,有源层产生光。 第二层覆盖有源层,第二层具有邻近有源层的接触的第一表面和具有散射射入第二表面的光的表面的第二表面。 透明导电材料层与第二表面相邻并被由对活性层产生的光透明的电介质材料的第一层覆盖。 反射率大于90%的镜面层沉积在第一层电介质材料上。
    • 45. 发明授权
    • Distributed LED-based light source
    • 分布式LED基光源
    • US08035284B2
    • 2011-10-11
    • US12888055
    • 2010-09-22
    • Ghulam Hasnain
    • Ghulam Hasnain
    • H01J7/24
    • F21V29/70F21K9/00F21V23/005F21V29/507H01L2224/48091H05K1/0203H05K1/0206H05K1/05H05K2201/10106H01L2924/00014
    • A light source having a substrate with a plurality of component LED light generators mounted thereon is disclosed. The substrate has a first metallic surface characterized by a normal that points in a normal direction. The first metallic surface is in contact with air over the first metallic surface. The component LED light generators are mounted directly on the first metallic surface. Each component LED light generator includes an LED characterized by an operating temperature and emitting light in the normal direction. Each LED generator generates more than 0.5 watts of heat. The component LED light generators are spaced apart on the first metallic surface such that the operating temperature remains less than 75° C. above the air temperature. In one aspect of the invention, the first metallic surface surrounding each component LED light generator radiates an amount of heat equal to the heat generated by that component LED light generator.
    • 公开了具有安装在其上的多个部件LED发光体的基板的光源。 衬底具有第一金属表面,其特征在于法线方向上指向法线。 第一金属表面与第一金属表面上的空气接触。 组件LED发光器直接安装在第一金属表面上。 每个元件LED发光器包括一个LED,其特征在于工作温度并在正常方向上发光。 每个LED发生器产生超过0.5瓦特的热量。 组件LED发光器在第一金属表面上间隔开,使得工作温度保持在高于空气温度的75℃以上。 在本发明的一个方面,围绕每个部件LED光发生器的第一金属表面辐射相当于由该部件LED光发生器产生的热量的热量。
    • 48. 发明授权
    • Inverted LED structure with improved light extraction
    • 倒立式LED结构,提高光强
    • US07741134B2
    • 2010-06-22
    • US12210845
    • 2008-09-15
    • Ghulam Hasnain
    • Ghulam Hasnain
    • H01L21/02
    • H01L33/20
    • A light source and method for fabricating the same are disclosed. The light source includes a substrate and a light emitting structure. The substrate has a first surface and a second surface, the second surface including a curved, convex surface with respect to the first surface of the substrate. The light emitting structure includes a first layer of a material of a first conductivity type overlying the first surface, an active layer overlying the first layer, the active layer generating light when holes and electrons recombine therein, and a second layer includes a material of a second conductivity type overlying the active layer and a second surface opposite to the first surface. A mirror layer overlies the light emitting structure.
    • 公开了一种光源及其制造方法。 光源包括基板和发光结构。 衬底具有第一表面和第二表面,第二表面包括相对于衬底的第一表面的弯曲的凸形表面。 发光结构包括覆盖第一表面的第一导电类型的材料的第一层,覆盖第一层的有源层,当空穴和电子在其中复合时产生光的有源层,以及第二层包括 覆盖有源层的第二导电类型和与第一表面相对的第二表面。 镜面层覆盖发光结构。
    • 50. 发明申请
    • LED Structure
    • LED结构
    • US20090146165A1
    • 2009-06-11
    • US11952048
    • 2007-12-06
    • Ghulam HasnainSteven D. Lester
    • Ghulam HasnainSteven D. Lester
    • H01L33/00
    • H01L33/46H01L33/22H01L33/382H01L33/405H01L33/44
    • A light emitting device, a wafer for making the same, and method for fabricating the same are disclosed. The device and wafer include a first layer of a first conductivity type, an active layer, and a layer of a second conductivity type. The active layer overlies the first layer, the active layer generating light. The second layer overlies the active layer, the second layer having a first surface in contact adjacent to the active layer and a second surface having a surface that includes features that scatter light striking the second surface. A layer of transparent electrically conducing material is adjacent to the second surface and covered by a first layer of a dielectric material that is transparent to the light generated by the active layer. A mirror layer that has a reflectivity greater than 90 percent is deposited on the first layer of dielectric material.
    • 公开了一种发光器件,用于制造它的晶片及其制造方法。 器件和晶片包括第一导电类型的第一层,有源层和第二导电类型的层。 有源层覆盖第一层,有源层产生光。 第二层覆盖有源层,第二层具有邻近有源层的接触的第一表面和具有散射射入第二表面的光的表面的第二表面。 透明导电材料层与第二表面相邻并被由对活性层产生的光透明的电介质材料的第一层覆盖。 反射率大于90%的镜面层沉积在第一层电介质材料上。