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41. 发明授权

US5584167A Working vehicle 失效
标题翻译：工作车辆
公开(公告)号：US5584167A
公开(公告)日：1996-12-17
申请号：US299621
申请日：1994-09-02
申请人： Kenji Hamada , Toshinori Kirihata , Masami Nakamura , Youzaburo Narahara , Keita Kamikubo , Mikio Takagi , Koichi Kawasaki
发明人： Kenji Hamada , Toshinori Kirihata , Masami Nakamura , Youzaburo Narahara , Keita Kamikubo , Mikio Takagi , Koichi Kawasaki
IPC分类号： B62D11/18 , F16H7/08 , A01D41/12 , A01F12/58 , B62D11/04
CPC分类号： F16H7/0827 , B62D11/183 , Y10S180/90
摘要： A tracked agricultural combine vehicle for harvesting, hulling and sorting grain includes integrated control means for left and right side propulsion track assemblies wherein individual track steering commands in the form of differential track speed control are derived from a common steering wheel input and vehicle speed is controlled by a single input means which controls the speed of both tracks.
摘要翻译：用于收获，除毛和分选谷物的跟踪农用车辆包括用于左侧和右侧推进轨道组件的集成控制装置，其中以共同的方向盘输入导出差分履带速度控制形式的单独轨道转向指令，并且控制车速通过控制两个轨道的速度的单个输入装置。

42. 发明授权

US4790087A License plate assembly for motorcycles 失效
标题翻译：摩托车车牌组装
公开(公告)号：US4790087A
公开(公告)日：1988-12-13
申请号：US896509
申请日：1986-08-14
申请人： Kenji Hamada , Masato Iwakura
发明人： Kenji Hamada , Masato Iwakura
IPC分类号： B62J6/00 , B60Q1/56 , B60R13/10 , B62J99/00 , G09F13/02
CPC分类号： B60Q1/56
摘要： A license plate assembly on a motorcycle includes a stay by which a license plate is erected from a rear cover over a rear wheel behind a seat, and an illumination device embedded in the rear cover below and behind the license plate for upwardly emitting a light beam to illuminate the license plate.
摘要翻译：摩托车上的车牌组件包括从座椅后面的后盖上的后盖竖立牌照的车厢，以及嵌入车牌下面和后面的后盖中的照明装置，用于向上发射光束照亮车牌。

43. 发明授权

US09421657B2 Machining control apparatus and machining control method thereof 有权
标题翻译：加工控制装置及其加工控制方法
公开(公告)号：US09421657B2
公开(公告)日：2016-08-23
申请号：US13995827
申请日：2011-09-14
申请人： Kenji Hamada , Shinji Murakami , Yoshihiko Yamada
发明人： Kenji Hamada , Shinji Murakami , Yoshihiko Yamada
IPC分类号： B23Q15/08 , B23Q15/12 , B23Q17/09 , B23Q17/12 , G05B19/04 , G05B19/416 , G05B19/404
CPC分类号： B23Q15/08 , B23Q15/12 , B23Q17/09 , B23Q17/12 , G05B19/404 , G05B19/416 , G05B2219/42344 , G05B2219/49074 , G05B2219/49357 , Y10T409/30112 , Y10T409/302968
摘要： The present invention discloses a machining control apparatus capable of decreasing a machining error, comprising: a rotation velocity decision process part for deciding a rotation velocity of the rotation tool in such a way that an amplitude of vibration of the rotation tool is decreased, based on a vibration state of the rotation tool and a vibration phase of the rotation tool when the rotation tool receives the cutting resistance force, in the case that the rotation tool vibrates due to the interrupted cutting resistance force generated in the rotation tool during the interrupted cutting; and a rotation velocity control part for controlling the rotation velocity(S) of the rotation tool based on the rotation velocity decided.
摘要翻译：本发明公开了一种能够减少加工误差的加工控制装置，其特征在于，包括：旋转速度决定处理部，其基于所述旋转工具的旋转速度来决定所述旋转工具的振动的振幅，在旋转工具受到切割阻力的情况下旋转工具的振动状态和旋转工具的振动阶段，在旋转工具由于在间歇切割期间由于旋转工具中产生的切断阻力而中断而发生振动的情况下，以及旋转速度控制部，其基于决定的旋转速度来控制旋转工具的旋转速度（S）。

44. 发明授权

US09414807B2 Ultrasound diagnosis apparatus, medical image display apparatus and medical image displaying method 有权
标题翻译：超声诊断装置，医用图像显示装置及医用图像显示方法
公开(公告)号：US09414807B2
公开(公告)日：2016-08-16
申请号：US12691186
申请日：2010-01-21
申请人： Kenji Hamada , Yoshitaka Mine , Itsuki Kuga , Eiichi Shiki
发明人： Kenji Hamada , Yoshitaka Mine , Itsuki Kuga , Eiichi Shiki
IPC分类号： A61B8/14 , G06T19/00 , A61B6/00 , A61B8/08
CPC分类号： A61B8/14 , A61B6/466 , A61B8/483 , A61B8/523 , G06T19/003
摘要： An ultrasound diagnosis system, a medical image display apparatus and displaying method that simultaneously acquires virtual endoscopy image data and multi-planar-reconstruction (MPR) image data of a diagnosing target region based on the volume data acquired from an object. Virtual endoscopy image data is generated by setting up a viewing point and a viewing direction on a volume data acquired from the object. A marker is provided on a target region of a lumen organ shown in the virtual endoscopy image data for setting up an observing direction. A reference line started from the volume data is set up along an observing direction. By comparing a voxel value of the volume data that is crossing to the reference line with a prescribed threshold value, a reference point where a surface of the diagnosing target region crosses the reference line is set up to the volume data. MPR image data is generated by extracting each voxel of the volume data corresponded to each of three MPR cross-sectional planes that are mutually orthogonally crossing at the reference point and displayed with the virtual endoscopy image data.
摘要翻译：基于从对象获取的体数据，同时获取诊断对象区域的虚拟内窥镜图像数据和多平面重构（MPR）图像数据的超声诊断系统，医疗用图像显示装置及显示方法。虚拟内窥镜图像数据通过在从对象获取的体数据上设置观察点和观察方向来生成。在用于建立观察方向的虚拟内窥镜图像数据中所示的管腔器官的目标区域上设置有标记。沿观察方向设置从音量数据开始的参考线。通过将与参考线交叉的体积数据的体素值与规定的阈值进行比较，将诊断对象区域的表面与基准线交叉的参考点设定为体积数据。 MPR图像数据是通过提取与参考点相互正交交叉并与虚拟内窥镜图像数据一起显示的三个MPR横截面中的每一个对应的体数据的每个体素来生成的。

45. 发明申请

US20140353678A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20140353678A1
公开(公告)日：2014-12-04
申请号：US14363914
申请日：2012-08-02
申请人： Tsuyoshi Kawakami , Kenji Hamada , Kohei Ebihara , Akihiko Furukawa , Yuji Murakami
发明人： Tsuyoshi Kawakami , Kenji Hamada , Kohei Ebihara , Akihiko Furukawa , Yuji Murakami
IPC分类号： H01L29/06 , H01L29/66 , H01L29/861 , H01L29/78 , H01L21/266 , H01L29/872
CPC分类号： H01L29/063 , H01L21/266 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0692 , H01L29/0847 , H01L29/1608 , H01L29/42368 , H01L29/66136 , H01L29/66143 , H01L29/66659 , H01L29/7835 , H01L29/8611 , H01L29/872
摘要： A semiconductor device includes an active region formed in an upper layer portion of a semiconductor layer of a first conductivity type, and a plurality of electric field relaxation layers disposed from an edge of the active region toward the outside so as to surround the active region. The plurality of electric field relaxation layers include a plurality of first electric field relaxation layers and a plurality of second electric field relaxation layers alternately disposed adjacent to each other, the first electric field relaxation layer and the second electric field relaxation layer adjacent to each other forming a set. Impurities of a second conductivity type are implanted to the first electric field relaxation layers at a first surface density, widths of which becoming smaller as apart from the active region. Impurities of the second conductivity type are implanted to the second electric field relaxation layers at a second surface density lower than the first surface density, widths of which becoming larger as apart from the active region.
摘要翻译：半导体器件包括形成在第一导电类型的半导体层的上层部分中的有源区和从有源区的边缘朝向外部设置以围绕有源区的多个电场弛豫层。多个电场弛豫层包括彼此相邻交替设置的多个第一电场弛豫层和多个第二电场弛豫层，第一电场弛豫层和彼此相邻的第二电场弛豫层形成一套。第二导电类型的杂质以第一表面密度注入第一电场弛豫层，其宽度随着活性区域的变小而变小。第二导电类型的杂质以比第一表面密度低的第二表面密度注入第二电场弛豫层，其宽度随着活性区域的变大而变大。

46. 发明授权

US08875891B2 Press-through package and method of removing medication from same 有权
标题翻译：直通式包装及从其中去除药物的方法
公开(公告)号：US08875891B2
公开(公告)日：2014-11-04
申请号：US13108685
申请日：2011-05-16
申请人： Kenji Yamashita , Akiyoshi Yasusato , Tetsuya Yamashita , Kenji Hamada , Goro Kuratani , Masakazu Sugino , Yuko Hanazono , Yoshihiko Matsuoka
发明人： Kenji Yamashita , Akiyoshi Yasusato , Tetsuya Yamashita , Kenji Hamada , Goro Kuratani , Masakazu Sugino , Yuko Hanazono , Yoshihiko Matsuoka
IPC分类号： B65D83/04 , A61J1/03 , B65D75/32
CPC分类号： B65D75/327 , A61J1/035 , B65D83/0445 , Y10T29/49826
摘要： A press-through package for articles such as medicines which can reliably prevent a recipient from accidentally swallowing the whole package without opening it, including solid medicines M stored in a plurality of pockets of a base sheet one by one and the pockets sealed by a cover film having attached to the rear surface of the base sheet, wherein the entire package of the press-through package is made in a cylindrical form which cannot allow a recipient from accidentally swallowing and from which the medicines can be taken out easily.
摘要翻译：一种用于能够可靠地防止接收者意外吞咽整个包装而不打开它的物品的压穿包装，包括一个接一个地存储在基片的多个口袋中的固体药物M和由盖子封闭的口袋薄膜附着在基片的后表面上，其中压入包装的整个包装制成圆柱形，不能容许接收者意外吞咽，并且药物可以容易地从中取出。

47. 发明申请

US20140021489A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20140021489A1
公开(公告)日：2014-01-23
申请号：US14009628
申请日：2012-03-29
申请人： Kenji Hamada , Tsuyoshi Kawakami
发明人： Kenji Hamada , Tsuyoshi Kawakami
IPC分类号： H01L29/16
CPC分类号： H01L29/1608 , H01L21/046 , H01L29/0615 , H01L29/0619 , H01L29/0878 , H01L29/66128 , H01L29/66136 , H01L29/7395 , H01L29/7811 , H01L29/8611 , H01L29/872
摘要： A semiconductor device having a high withstand voltage in which a stable withstand voltage can be obtained and a method for manufacturing the same. A JTE region having a second conductivity type is formed in a portion on an outer peripheral end side of an SiC substrate from a second conductivity type SiC region in a vicinal portion of a surface on one of sides in a thickness direction of a first conductivity type SiC epitaxial layer. A first conductivity type SiC region having a higher concentration of an impurity having the first conductivity type than that of the SiC epitaxial layer is formed in at least a vicinal portion of a surface on one of sides in a thickness direction of a portion in which the JTE regions are bonded to each other.
摘要翻译：具有能够获得稳定耐受电压的高耐受电压的半导体器件及其制造方法。具有第二导电类型的JTE区域形成在SiC衬底的外周端侧的从第一导电类型的厚度方向的一侧的表面的相邻部分中的第二导电型SiC区域的部分中 SiC外延层。在第一导电类型的SiC区域中，具有比SiC外延层的第一导电类型的杂质浓度高的第一导电型SiC区域在至少一个侧面中的一个侧面的连续部分上形成， JTE地区相互结合。

48. 发明申请

US20130268110A1 MACHINING ERROR CALCULATION APPARATUS, MACHINING ERROR CALCULATION METHOD, MACHINING CONTROL APPARATUS AND MACHINING CONTROL METHOD THEREOF 有权
标题翻译：加工误差计算装置，加工误差计算方法，加工控制装置及其加工控制方法
公开(公告)号：US20130268110A1
公开(公告)日：2013-10-10
申请号：US13994961
申请日：2011-09-14
申请人： Kenji Hamada
发明人： Kenji Hamada
IPC分类号： G05B19/406
CPC分类号： G05B19/406 , G05B19/404 , G05B2219/49186
摘要： The present invention discloses a machining error calculation apparatus for calculating the machining error more precisely through analysis. The apparatus comprises: a tool center displacement amount calculation part for calculating a displacement amount of a rotation center of the rotation tool according to the cutting resistance force in the rotation tool, in the case that the cutting resistance force generated in the rotation tool during said interrupted cutting is varied; a relative tool-edge position calculation part for calculating a relative tool-edge position of the cutting-edge portion with respect to the rotation center of the rotation tool; an absolute tool-edge position calculation part for calculating an absolute tool-edge position of the cutting-edge portion with respect to the workpiece, based on the displacement amount of the rotation center of the rotation tool and the relative tool-edge position; a machined shape calculation part for calculating the machined shape of the workpiece through transferring the absolute tool-edge position on the workpiece; and a machining error calculation unit for calculating a machining error of the workpiece based on a difference between the machined shape of the workpiece and an objective shape of the workpiece.
摘要翻译：本发明公开了一种通过分析更准确地计算加工误差的加工误差计算装置。该装置包括：工具中心位移量计算部，其用于在所述旋转工具中产生的切削阻力时，根据所述旋转工具中的切削阻力来计算所述旋转工具的旋转中心的位移量; 中断切割多种多样; 相对刀具边缘位置计算部，用于计算切削刃部相对于旋转刀具的旋转中心的相对刀尖位置; 绝对刀刃位置计算部，其基于所述旋转刀具的旋转中心的位移量和所述相对刀沿位置来计算所述切削刃部相对于所述工件的绝对刀尖位置; 加工形状计算部，用于通过在工件上传递绝对刀刃位置来计算加工形状; 以及加工误差计算单元，用于基于加工的工件形状与工件的物体形状之间的差来计算工件的加工误差。

49. 发明申请

US20130140582A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130140582A1
公开(公告)日：2013-06-06
申请号：US13816511
申请日：2011-04-15
申请人： Tsuyoshi Kawakami , Akihiko Furukawa , Naruhisa Miura , Yasuhiro Kagawa , Kenji Hamada , Yoshiyuki Nakaki
发明人： Tsuyoshi Kawakami , Akihiko Furukawa , Naruhisa Miura , Yasuhiro Kagawa , Kenji Hamada , Yoshiyuki Nakaki
IPC分类号： H01L29/12 , H01L21/265
CPC分类号： H01L29/12 , H01L21/0465 , H01L21/265 , H01L21/266 , H01L29/0615 , H01L29/0619 , H01L29/063 , H01L29/0634 , H01L29/0692 , H01L29/0878 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/66128 , H01L29/66143 , H01L29/66659 , H01L29/7835 , H01L29/8611 , H01L29/872
摘要： The present invention relates to a semiconductor device and a method for manufacturing the same. A RESURF layer (101) including a plurality of P-type implantation layers having a relatively low concentration of P-type impurity is formed adjacent to an active region (2). The RESURF layer (101) includes a first RESURF layer (11), a second RESURF layer (12), a third RESURF layer (13), a fourth RESURF layer (14), and a fifth RESURF layer (15) that are arranged sequentially from the P-type base (2) side so as to surround the P-type base (2). The second RESURF layer (12) is configured with small regions (11′) having an implantation amount equal to that of the first RESURF layer (11) and small regions (13′) having an implantation amount equal to that of the third RESURF layer (13) being alternately arranged in multiple. The fourth RESURF layer (14) is configured with small regions (13′) having an implantation amount equal to that of the third RESURF layer (13) and small regions (15′) having an implantation amount equal to that of the fifth RESURF layer (15) being alternately arranged in multiple.
摘要翻译：半导体器件及其制造方法技术领域本发明涉及半导体器件及其制造方法。在活性区域（2）附近形成包括具有相对低浓度的P型杂质的多个P型注入层的RESURF层（101）。 RESURF层（101）包括第一RESURF层（11），第二RESURF层（12），第三RESURF层（13），第四RESURF层（14）和第五RESURF层（15）从P型基底（2）侧顺序地包围P型基底（2）。第二RESURF层（12）配置有具有等于第一RESURF层（11）的注入量的小区域（11'）和具有等于第三RESURF层的注入量的小区域（13'）（13）交替布置成多个。第四RESURF层（14）配置有具有等于第三RESURF层（13）的注入量的小区域（13'）和具有等于第五RESURF层的注入量的小区域（15'）（15）交替排列成多个。

50. 发明申请

US20090238749A1 Method for purification of nitrogen oxide and apparatus for purfication of nitrogen oxide 有权
标题翻译：纯化氮氧化物的方法和氮氧化物的净化装置
公开(公告)号：US20090238749A1
公开(公告)日：2009-09-24
申请号：US11990668
申请日：2006-08-17
申请人： Hiroyuki Hata , Kenji Hamada , Shinichi Tai
发明人： Hiroyuki Hata , Kenji Hamada , Shinichi Tai
IPC分类号： C01B21/20 , B01D3/00
CPC分类号： C01B21/24 , C01B21/36
摘要： A nitrogen oxide purifying apparatus includes a gas absorption vessel (1) and a condenser (6), where the vessel receives an absorption solution containing liquefied N2O4 for absorbing NO and also receives a source gas to vary the temperature and/or pressure of the source gas and the absorption solution, while the condenser receives a gas from the gas absorption vessel (1) to vary the temperature and/or pressure of the gas. In the gas absorption vessel (1), the absorption solution containing liquefied N2O4 may be applied to the source gas containing NO, so that NO is absorbed in the absorption solution. Then the absorption-solution is heated and/or depressurized to generate an intermediate gas containing a relatively large amount of NO and a smaller amount of NO2 from the absorption solution. In the condenser (6), the intermediate gas is cooled and/or pressurized to give condensed N2O3 and/or condensed N2O4.
摘要翻译：氮氧化物净化装置包括气体吸收容器（1）和冷凝器（6），其中容器接收含有用于吸收NO的液化N2O4的吸收溶液，并且还接收源气体以改变源的温度和/或压力气体和吸收溶液，而冷凝器从气体吸收容器（1）接收气体以改变气体的温度和/或压力。在气体吸收容器（1）中，可以将含有液化的N 2 O 4的吸收溶液施加到含有NO的源气体上，使得NO吸收在吸收溶液中。然后将吸收溶液加热和/或减压以产生含有相对大量的NO和较少量的来自吸收溶液的NO 2的中间气体。在冷凝器（6）中，中间气体被冷却和/或加压以得到冷凝的N 2 O 3和/或冷凝的N 2 O 4。

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