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41. 发明授权

US06319856B1 Methods of forming dielectric layers and methods of forming capacitors 失效
标题翻译：形成电介质层的方法和形成电容器的方法
公开(公告)号：US06319856B1
公开(公告)日：2001-11-20
申请号：US09670984
申请日：2000-09-26
申请人： Garo J. Derderian , Gurtej S. Sandhu
发明人： Garo J. Derderian , Gurtej S. Sandhu
IPC分类号： H01L2131
CPC分类号： H01L21/31604 , C23C16/30 , C23C16/4405 , H01L21/31629 , H01L21/31691
摘要： Methods of forming dielectric layers and methods of forming capacitors are described. In one embodiment, a substrate is placed within a chemical vapor deposition reactor. In the presence of activated fluorine, a dielectric layer is chemical vapor deposited over the substrate and comprises fluorine from the activated fluorine. In another embodiment, a fluorine-comprising material is formed over at least a portion of an internal surface of the reactor. Subsequently, a dielectric layer is chemical vapor deposited over the substrate. During deposition, at least some of the fluorine-comprising material is dislodged from the surface portion and incorporated in the dielectric layer. In another embodiment, the internal surface of the reactor is treated with a gas plasma generated from a source gas comprising fluorine, sufficient to leave some residual fluorine thereover. Subsequently, a substrate is exposed within the reactor to chemical vapor deposition conditions which are effective to form a dielectric layer thereover comprising fluorine from the residual fluorine.
摘要翻译：描述形成电介质层的方法和形成电容器的方法。在一个实施例中，将衬底放置在化学气相沉积反应器内。在活性氟的存在下，电介质层被化学气相沉积在衬底上并且包含来自活性氟的氟。在另一个实施方案中，在反应器的内表面的至少一部分上形成含氟材料。随后，介电层被化学气相沉积在衬底上。在沉积期间，至少一些含氟材料从表面部分移出并且被并入电介质层中。在另一个实施方案中，反应器的内表面用从包含氟的源气体产生的气体等离子体处理，足以在其上留下一些残留的氟。随后，将基板在反应器内暴露于化学气相沉积条件，这些条件有效地形成介电层，其中包含来自残余氟的氟。

42. 发明授权

US06188097B1 Rough electrode (high surface area) from Ti and TiN 失效
标题翻译：来自Ti和TiN的粗电极（高表面积）
公开(公告)号：US06188097B1
公开(公告)日：2001-02-13
申请号：US08887915
申请日：1997-07-02
申请人： Garo J. Derderian , Gurtej S. Sandhu
发明人： Garo J. Derderian , Gurtej S. Sandhu
IPC分类号： H01L2900
CPC分类号： H01L28/84 , H01L27/10852 , Y10S438/964
摘要： A technique for forming high surface area electrode or storage nodes for a capacitor and devices formed thereby, including depositing a first layer of conductive material on a substrate, such that a discontinuous layer is formed. A second conductive material layer is deposited over the discontinuous first conductive material layer, such that the second conductive material layer grows or accumulates on the discontinuous first conductive material layer at a faster rate than on the exposed areas of the substrate in the discontinuous first conductive material layer to form a rough conductive material layer.
摘要翻译：一种用于形成用于电容器的高表面积电极或存储节点的技术，以及由此形成的器件，包括在衬底上沉积第一导电材料层，从而形成不连续层。在不连续的第一导电材料层上沉积第二导电材料层，使得第二导电材料层以不连续的第一导电材料中的衬底的暴露区域的速度比不连续的第一导电材料层生长或积聚层以形成粗糙的导电材料层。

43. 发明授权

US08362576B2 Transistor with reduced depletion field width 失效
标题翻译：具有减少耗尽场宽度的晶体管
公开(公告)号：US08362576B2
公开(公告)日：2013-01-29
申请号：US13006789
申请日：2011-01-14
申请人： Shuang Meng , Garo J. Derderian , Gurtej S. Sandhu
发明人： Shuang Meng , Garo J. Derderian , Gurtej S. Sandhu
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L23/58 , H01L27/148 , H01L29/768 , H01L29/74 , H01L29/96 , H01L31/111 , H01L29/34
CPC分类号： H01L29/511 , C23C16/45542 , C23C16/515 , H01L21/02183 , H01L21/02274 , H01L21/0228 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28562 , H01L21/28568 , H01L21/3141 , H01L21/76843 , H01L28/75 , H01L28/84 , H01L29/513 , H01L29/517 , H01L29/518
摘要： Atomic layer deposition is enhanced using plasma. Plasma begins prior to flowing a second precursor into a chamber. The second precursor reacts with a first precursor to deposit a layer on a substrate. The layer may include at least one element from each of the first and second precursors. The layer may be TaN, and the precursors may be TaF5 and NH3. The plasma may begin during purge gas flow between a pulse of the first precursor and a pulse of the second precursor. Thermal energy assists the reaction of the precursors to deposit the layer on the substrate. The thermal energy may be greater than generally accepted for ALD (e.g., more than 300 degrees Celsius).
摘要翻译：使用等离子体增强原子层沉积。等离子体在将第二前体流入室之前开始。第二前体与第一前体反应以在衬底上沉积一层。该层可以包括来自第一和第二前体中的每一个的至少一种元素。该层可以是TaN，前体可以是TaF5和NH3。等离子体可以在第一前体的脉冲和第二前体的脉冲之间的净化气流期间开始。热能有助于前体的反应，以将该层沉积在基底上。热能可能大于ALD普遍接受的热能（例如，超过300摄氏度）。

44. 发明授权

US07863199B2 Methods of forming particle-containing materials 有权
标题翻译：形成含颗粒材料的方法
公开(公告)号：US07863199B2
公开(公告)日：2011-01-04
申请号：US12608596
申请日：2009-10-29
申请人： Garo J. Derderian , Gurtej S. Sandhu
发明人： Garo J. Derderian , Gurtej S. Sandhu
IPC分类号： B05D1/12
CPC分类号： H01L21/76838 , C23C16/45525 , C23C16/45555 , H01L21/02126 , H01L21/02164 , H01L21/0226 , H01L21/0228 , H01L21/288 , H01L21/3141 , H01L21/3146 , H01L21/31608 , H01L21/31633 , H01L21/76829 , H01L21/76837 , Y10S438/962 , Y10S438/964 , Y10T428/12493 , Y10T428/12528 , Y10T428/12576 , Y10T428/12806 , Y10T428/1284
摘要： The invention includes methods of forming particle-containing materials, and also includes semiconductor constructions comprising particle-containing materials. One aspect of the invention includes a method in which a first monolayer is formed across at least a portion of a semiconductor substrate, particles are adhered to the first monolayer, and a second monolayer is formed over the particles. Another aspect of the invention includes a construction containing a semiconductor substrate and a particle-impregnated conductive material over at least a portion of the semiconductor substrate. The particle-impregnated conductive material can include tungsten-containing particles within a layer which includes tantalum or tungsten.
摘要翻译：本发明包括形成含颗粒材料的方法，还包括包含含颗粒的材料的半导体结构。本发明的一个方面包括一种方法，其中在半导体衬底的至少一部分上形成第一单层，颗粒粘附到第一单层，并且在颗粒上方形成第二单层。本发明的另一方面包括在半导体衬底的至少一部分上包含半导体衬底和含有颗粒的导电材料的结构。颗粒浸渍的导电材料可以包括在包括钽或钨的层内的含钨颗粒。

45. 发明授权

US07393562B2 Deposition methods for improved delivery of metastable species 有权
标题翻译：用于改善亚稳态物种输送的沉积方法
公开(公告)号：US07393562B2
公开(公告)日：2008-07-01
申请号：US10852784
申请日：2004-05-24
申请人： Garo J. Derderian , Gurtej S. Sandhu
发明人： Garo J. Derderian , Gurtej S. Sandhu
IPC分类号： C30B25/00 , C23C16/452
CPC分类号： C23C16/452 , C23C16/4481 , C23C16/45534 , C23C16/45544 , H01L21/0228
摘要： A method of providing material into a deposition chamber is provided. A reservoir is in fluid communication with the deposition chamber. A metastable specie is provided and contained within the reservoir prior to flowing the metastable specie from the reservoir into the deposition chamber. For atomic layer deposition, the metastable specie can be purged from the containment reservoir and the metastable specie can be compressed into the reaction chamber from the reservoir. A portion of the metastable specie is deposited onto a substrate.
摘要翻译：提供了将材料提供到沉积室中的方法。储存器与沉积室流体连通。在将亚稳态物质从储存器流入沉积室之前，提供并包含在储存器内的亚稳态物质。对于原子层沉积，可以从容纳储存器清除亚稳态物质，并且亚稳态物质可以从储层压缩到反应室中。亚稳态物质的一部分沉积在基底上。

46. 发明授权

US07312163B2 Atomic layer deposition methods, and methods of forming materials over semiconductor substrates 有权
标题翻译：原子层沉积方法以及在半导体衬底上形成材料的方法
公开(公告)号：US07312163B2
公开(公告)日：2007-12-25
申请号：US10671922
申请日：2003-09-24
申请人： Garo J. Derderian , Gurtej S. Sandhu
发明人： Garo J. Derderian , Gurtej S. Sandhu
IPC分类号： H01L21/44 , H01L21/469
CPC分类号： C23C16/45536 , C23C16/44 , H01L21/28562
摘要： The invention includes methods in which at least two different precursors are flowed into a reaction chamber at different and substantially non-overlapping times relative to one another to form a material over at least a portion of a substrate, and in which at least one of the precursors is asymmetric with respect to a physical property. A field influencing the asymmetric physical property is oriented within the reaction chamber, and is utilized to affect alignment of the precursor having the asymmetric property as the material is formed. The asymmetric physical property can, for example, be an anisotropic charge distribution associated with the precursor, and in such aspect, the field utilized to influence the asymmetric physical property can be an electric field provided within the reaction chamber and/or a magnetic field provided within the reaction chamber. The methodology of the present invention can be utilized in atomic layer deposition processes.
摘要翻译：本发明包括这样的方法，其中至少两种不同的前体相对于彼此以不同的和基本上不重叠的时间流动到反应室中，以在衬底的至少一部分上形成材料，并且其中至少一个前体在物理性质方面是不对称的。影响不对称物理性质的场定向在反应室内，并且用于影响形成材料时具有不对称性质的前体的取向。不对称物理性质可以是例如与前体相关的各向异性电荷分布，在这种方面，用于影响不对称物理性质的场可以是在反应室内提供的电场和/或提供的磁场在反应室内。本发明的方法可用于原子层沉积工艺。

47. 发明授权

US07253104B2 Methods of forming particle-containing materials 有权
标题翻译：形成含颗粒材料的方法
公开(公告)号：US07253104B2
公开(公告)日：2007-08-07
申请号：US10726328
申请日：2003-12-01
申请人： Garo J. Derderian , Gurtej S. Sandhu
发明人： Garo J. Derderian , Gurtej S. Sandhu
IPC分类号： H01L21/44
CPC分类号： H01L21/76838 , C23C16/45525 , C23C16/45555 , H01L21/02126 , H01L21/02164 , H01L21/0226 , H01L21/0228 , H01L21/288 , H01L21/3141 , H01L21/3146 , H01L21/31608 , H01L21/31633 , H01L21/76829 , H01L21/76837 , Y10S438/962 , Y10S438/964 , Y10T428/12493 , Y10T428/12528 , Y10T428/12576 , Y10T428/12806 , Y10T428/1284
摘要： The invention includes methods of forming particle-containing materials, and also includes semiconductor constructions comprising particle-containing materials. One aspect of the invention includes a method in which a first monolayer is formed across at least a portion of a semiconductor substrate, particles are adhered to the first monolayer, and a second monolayer is formed over the particles. Another aspect of the invention includes a construction containing a semiconductor substrate and a particle-impregnated conductive material over at least a portion of the semiconductor substrate. The particle-impregnated conductive material can include tungsten-containing particles within a layer which includes tantalum or tungsten.
摘要翻译：本发明包括形成含颗粒材料的方法，还包括包含含颗粒的材料的半导体结构。本发明的一个方面包括一种方法，其中在半导体衬底的至少一部分上形成第一单层，颗粒粘附到第一单层，并且在颗粒上方形成第二单层。本发明的另一方面包括在半导体衬底的至少一部分上包含半导体衬底和含有颗粒的导电材料的结构。颗粒浸渍的导电材料可以包括在包括钽或钨的层内的含钨颗粒。

48. 发明授权

US07109542B2 Capacitor constructions having a conductive layer 有权
标题翻译：具有导电层的电容器结构
公开(公告)号：US07109542B2
公开(公告)日：2006-09-19
申请号：US09879231
申请日：2001-06-11
申请人： Garo J. Derderian , Gurtej S. Sandhu
发明人： Garo J. Derderian , Gurtej S. Sandhu
IPC分类号： H01L27/108
CPC分类号： H01L28/56 , H01L21/02178 , H01L21/02181 , H01L21/02183 , H01L21/02189 , H01L21/02197 , H01L21/0228 , H01L21/02304 , H01L21/28568 , H01L21/31604 , H01L28/75 , H01L28/84
摘要： A capacitor fabrication method may include atomic layer depositing a conductive barrier layer to oxygen diffusion over the first electrode. A method may instead include chemisorbing a layer of a first precursor at least one monolayer thick over the first electrode and chemisorbing a layer of a second precursor at least one monolayer thick on the first precursor layer, a chemisorption product of the first and second precursor layers being comprised by a layer of a conductive barrier material. The barrier layer may be sufficiently thick and dense to reduce oxidation of the first electrode by oxygen diffusion from over the barrier layer. An alternative method may include forming a first capacitor electrode over a substrate, the first electrode having an inner surface area per unit area and an outer surface area per unit area that are both greater than an outer surface area per unit area of the substrate. A capacitor dielectric layer and a second capacitor electrode may be formed over the dielectric layer. The method may further include forming rugged polysilicon over the substrate, the first electrode being over the rugged polysilicon. Accordingly, the outer surface area of the first electrode can be at least 30% greater than the outer surface area of the substrate without the first electrode including polysilicon.
摘要翻译：电容器制造方法可以包括在第一电极上的氧扩散的原子层沉积导电阻挡层。一种方法可以包括在第一电极上化学吸附至少一层单层的第一前体层，并化学吸附第一前体层上至少一层单层的第二前体层，第一和第二前体层的化学吸附产物由导电阻挡材料层组成。阻挡层可以是足够厚且致密的，以通过从阻挡层上方的氧扩散来减少第一电极的氧化。替代方法可以包括在衬底上形成第一电容器电极，第一电极具有每单位面积的内表面积和每单位面积的外表面积，其大于衬底每单位面积的外表面积。可以在电介质层上形成电容器电介质层和第二电容器电极。该方法还可以包括在衬底上形成坚固的多晶硅，第一电极在坚固的多晶硅之上。因此，第一电极的外表面积可以比不含第一电极包括多晶硅的衬底的外表面积大至少30％。

49. 发明授权

US07094690B1 Deposition methods and apparatuses providing surface activation 有权
公开(公告)号：US07094690B1
公开(公告)日：2006-08-22
申请号：US09652533
申请日：2000-08-31
申请人： Gurtej S. Sandhu , Garo J. Derderian , Guy T. Blalock , Terry L. Gilton
发明人： Gurtej S. Sandhu , Garo J. Derderian , Guy T. Blalock , Terry L. Gilton
IPC分类号： H01L21/00
CPC分类号： C23C16/45544 , C23C16/44 , C23C16/45527 , C23C16/45534 , C30B25/02 , C30B25/18
摘要： A deposition method includes, at a first temperature, contacting a substrate with a surface activation agent and adsorbing a first layer over the substrate. At a second temperature greater than the first temperature, the first layer may be contacted with a first precursor, chemisorbing a second layer at least one monolayer thick over the substrate. The first layer may enhance a chemisorption rate of the first precursor compared to the substrate without the surface activation agent adsorbed thereon. One deposition apparatus includes a deposition chamber with a precursor gas dispenser in a contacting zone and a cooling gas dispenser in a cooling zone. A substrate chuck moves by linear translational motion from the contacting zone to the cooling zone. The substrate chuck includes a substrate lift that positions a deposition substrate at an elevation above a heated surface of the substrate chuck when dispensing a cooling gas or surface activation agent. Another deposition apparatus includes a cooling chamber with a cooled substrate chuck and a contacting chamber with a heated substrate chuck. The contacting chamber also has a precursor gas dispenser and the heated substrate chuck includes a substrate lift. A robotic substrate handler moves a substrate from the cooled substrate chuck to the heated substrate chuck.

50. 发明授权

US07087535B2 Deposition methods 有权
公开(公告)号：US07087535B2
公开(公告)日：2006-08-08
申请号：US10676169
申请日：2003-09-30
申请人： Garo J. Derderian , Gurtej S. Sandhu
发明人： Garo J. Derderian , Gurtej S. Sandhu
IPC分类号： H01L21/44 , B05D1/36 , B05D3/00 , B05D5/12
CPC分类号： C23C16/45525 , B05D1/185 , C23C16/04 , C23C16/045 , C23C16/403 , C23C16/45531 , C30B25/18 , H01L21/02178 , H01L21/0228 , H01L21/3141 , H01L21/3162
摘要： A deposition method includes contacting a substrate with a first initiation precursor and forming a first portion of an initiation layer on the substrate. At least a part of the substrate is contacted with a second initiation precursor different from the first initiation precursor and a second portion of the initiation layer is formed on the substrate. The substrate may be simultaneously contacted with a plurality of initiation precursors, forming on the substrate and initiation layer comprising components derived from each of the plurality of initiation precursors. An initiation layer may be contacted with a deposition precursor, forming a deposition layer on the initiation layer. The deposition layer may be contacted with a second initiation precursor different from the first initiation precursor forming a second initiation layer over the substrate. Also, a first initiation layer may be formed substantially selectively on a first-type substrate surface relative to a second-type substrate surface and contacted with a deposition precursor, forming a deposition layer substantially selectively over the first-type substrate surface.

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