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    • 41. 发明申请
    • PROCESS AND DEVICE FOR THE WAVE OR VAPOUR-PHASE SOLDERING OF ELECTRONIC UNITS
    • METHOD AND APPARATUS FOR波和/或电子部件汽相焊接
    • WO1996037330A1
    • 1996-11-28
    • PCT/DE1996000968
    • 1996-05-24
    • FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.SCHEEL, WolfgangRING, KarlHAFNER, WilliLEICHT, Helmut
    • FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
    • B23K01/015
    • B23K1/015B23K2101/40H05K3/3415H05K3/3468H05K3/3494H05K2203/088
    • The invention describes a process and a device for wave and/or reflow soldering in the form of vapour-phase soldering for electronic units. In prior art processes and devices, either wave soldering or vapour-phase soldering alone can be performed in a single chamber. For electronic units which contain both components which are to be wave soldered and those to be reflow soldered, at least two soldering devices and two process steps are necessary. There is the further drawback that temperature-sensitive components impose either a limitation on the soldering temperature and hence the solders which can be used or laborious post-fitting. The invention performs wave soldering and vapour-phase soldering as a form of reflow soldering in a single chamber, in which an electronic unit can be placed and/or the portion of the volume of the chamber filled with the saturated vapour of a primary fluid can be controlled in such a way that, at the worst, temperature-sensitive components of the unit lie only partly in the saturated vapour and the connections of the electronic components of the unit are in the saturated vapour during soldering. The invention permits the soldering of surface-fitted, penetrating and temperature-sensitive components, e.g. large electrolytic capacitors, in a single chamber and in a single process stage and is therefore eminently suitable for economical mass production with high soldering quality.
    • 本发明描述的方法和在用于电子组件汽相焊接的形式波和/或回流焊接的装置。 在在一个单一的室中仅波峰焊或仅气相焊接已知方法和装置或者是可行的。 对于包含于波峰焊和回流焊接两个部件的电子组件,从而至少两个焊接设备,因此需要两个工艺步骤。 还存在温度敏感设备或者需要在钎焊温度的限制,因此为所述可选择的焊接材料,或进行复杂的改造必要的缺点。 本发明实现了波峰焊和汽相焊接作为在单一腔室回流焊接的形式中,电子组件可被放置成和/或填充有所述室的主液体体积分数的饱和蒸汽被如此调节使得组件中的温度敏感元件至多部分地 位于饱和蒸汽,并且该连接被焊接模块的电子部件的软钎焊过程中位于饱和蒸汽。 本发明允许安装面的焊接,通过配合和温度敏感的组分,例如 大电解电容器,在一个单一的腔室,并在单一的工艺步骤,并且因此非常适合于廉价的大量生产具有非常好的焊接质量。
    • 45. 发明申请
    • PLASMA REACTOR
    • 等离子体反应器
    • WO1996023318A1
    • 1996-08-01
    • PCT/DE1995001786
    • 1995-12-08
    • FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.WILD, ChristofFÜNER, MichaelKOIDL, Peter
    • FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
    • H01J37/32
    • H01J37/32229H01J37/32192H01J37/32247
    • The invention concerns a plasma reactor for generating and maintaining plasma. The plasma reactor comprises a resonant cavity (11) whose cross-section tapers in summit regions (13, 16) in which the wall (14) of the resonant cavity (11) is closed to such an extent that an excited field mode in the region of the cross-sectional tapered portions displays main peaks (15, 31) whose maximum field intensity is increased with respect to the field intensity of adjacent secondary peaks. A reaction unit (18) is provided in the region of a main peak (31) with a substrate (21) which is to be processed and which can be coated in the gas phase of the plasma (32). As a result of the field intensity distribution brought about by a resonant cavity (11) of the given shape, with main peaks (15, 31) which are greatly increased with respect to secondary peaks, process parameters such as gas pressure and coupled electromagnetic power can be selected very largely independently of one another when the plasma (32) is in a stable situation, without the plasma (32) igniting undesirably in the region of secondary peaks. Furthermore, the comparatively homogeneous field intensity distribution in the main peak (31) maintaining the plasma (32) causes the substrate (21) to be processed uniformly.
    • 在用于产生和维持等离子体的等离子体反应器中,谐振腔(11)设置,其横截面在顶点区域(13,16)是锥形的。 在顶点区域(13,16)的空腔(11)的壁(14)关闭的程度,在横截面收缩的,其最大磁场强度相比相邻的次要最大值的场强是过度的区域主要最大值(15,31)的激发模式字段。 在主最大(31)的区域中具有包括被处理基板(21)的反应单元(18)被提供,其是从等离子体(32)的气相涂覆的。 通过处理特定形状产生的场强分布的谐振腔(11)相对于次级最大值过高主峰(15,31)是过程参数,例如气体压力和在等离子体(32)在很大程度上独立选择的稳定位置发射电磁功率,而不 涉及到在二次最大值的区域中的等离子体(32)的不希望的点火。 更设有由相对均匀的磁场强度分布实现,其中在等离子体(32)娱乐主最大(31)的基板(21)的均匀处理。
    • 50. 发明申请
    • METHOD OF PRODUCING A THREE-DIMENSIONAL COMPONENT OR GROUP OF COMPONENTS
    • 一种用于生产三维部件或任何部件组
    • WO1996008749A2
    • 1996-03-21
    • PCT/DE1995001151
    • 1995-08-23
    • FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.ROTHE, MartinaMACIOSSEK, AndreasLÖCHEL, Bernd
    • FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
    • G03F07/00
    • H01L28/10F15C5/00G03F7/00G03F7/0035H01F41/041H01F2017/0086
    • The invention concerns a method of producing a three-dimensional component or group of components, particularly on surfaces of already processed semiconductor chips . The production of three-dimensional features on chip surfaces is based on the stucturing of thick photosensitive resists and subsequent formation of the surface features by galvanic etching. Prior art methods merely use a thick photoresist and interposed galvanic starting layers to form three-dimensional features. The production of complex features is only possible with considerable difficulty owing to the low stability of the photoresist. The method proposed for the production of three-dimensional features uses, in addition to the galvanic etching of e.g. UV-structured photoresist layers with build-on metal films (16), etching using metal auxiliary films which are later removed again (sacrificial layers) (13). These metal auxiliary films lying in the resist layers are also used, in multi-layer features, as galvanic starting layers for additional build-on levels. The three-dimensional features which can be made by the method described enable, for example, e.g. coils and transformers to be manufactured, in a form in which they could not be manufactured previously, for integration on chip surfaces.
    • 本发明涉及一种方法,用于对已经处理过的的半导体芯片表面上产生的三个组分或组分的组,尤其如此。 在芯片上表面上已知的三维结构的基础是厚光致抗蚀剂和随后的电镀形成该抗蚀剂结构的结构。 公知的方法只使用厚光致抗蚀剂和中间晶种电极层为三维结构的形成。 更复杂的结构的建设是只增加了费用可能的,因为光致抗蚀剂的稳定性低。 根据本发明的方法使用三维结构除了的电复制,对于构成金属层(16)和与后要除去再次金属辅助层(牺牲层)(13)的印象的例子UV图案化光致抗蚀剂层。 这种固有的在金属涂料层的辅助层,同时使用在多层结构作为种子电极层为更要建立的水平。 这里描述的方法提供了三维结构,例如,线圈和变压器准备在切屑表面集成,这不能被以这种形式到目前为止实现。