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    • 44. 发明授权
    • Dry etch process control using electrically biased stop junctions
    • 使用电偏置停止接头的干蚀刻工艺控制
    • US5637189A
    • 1997-06-10
    • US670117
    • 1996-06-25
    • Eric PeetersJoel A. Kubby
    • Eric PeetersJoel A. Kubby
    • H01L21/302B81C1/00H01L21/306H01L21/3065H01L21/465H01L49/00
    • H01L21/30621H01L21/3065H01L21/465
    • A dry etch process for etching a semiconductor substrate having a p-n heterojunction formed by contact between a p-layer and a n-layer requires application of a reverse bias voltage of less than a p-n breakdown voltage across the p-n heterojunction. A plasma containing chemically reactive negative ions is directed against the n-layer, with etching of non-masked regions of the substrate continuing until it is substantially stopped at the reverse biased p-n heterojunction. The semiconductor substrate can be cooled or periodically recoated with erodable protective material to limit sidewall damage to the semiconductor substrate while still allowing downward etching. This dry etch process is well suited for construction of dimensionally accurate microdevices and microelectromechanical systems.
    • 用于蚀刻具有通过p层和n层之间的接触形成的p-n异质结的半导体衬底的干蚀刻工艺需要在p-n异质结上施加小于p-n击穿电压的反向偏置电压。 包含化学反应性负离子的等离子体指向n层,其中衬底的非掩蔽区域的蚀刻继续进行,直到其基本上停止在反向偏置的p-n异质结。 半导体衬底可以被可蚀刻的保护材料冷却或周期性地重新涂覆,以限制对半导体衬底的侧壁损伤,同时仍允许向下蚀刻。 这种干蚀刻工艺非常适用于尺寸精确的微型器件和微机电系统的构造。
    • 50. 发明申请
    • Variable Data Lithography System
    • 可变数据光刻系统
    • US20120103212A1
    • 2012-05-03
    • US13095714
    • 2011-04-27
    • Timothy StoweAshish PattekarEric PeetersDavid Biegelsen
    • Timothy StoweAshish PattekarEric PeetersDavid Biegelsen
    • B41L25/00
    • B41C1/1041B41F7/02B41F7/26B41F31/002B41F31/045B41N1/003B41N3/08B41P2227/70
    • A variable data lithography system includes an improved imaging member, a dampening solution subsystem, a patterning subsystem, an inking subsystem, and an image transfer subsystem. The imaging member comprises a reimageable surface layer comprising a polymer, the reimageable surface having a surface roughness Ra in the range of 0.10-4.0 μm peak-to-valley, and peak-to-valley nearest neighbor average distances finer than 20 μm. A structural mounting layer may be provided to which the reimageable surface layer is attached, either directly or with intermediate layers therebetween. The relatively rough surface facilitates retention of dampening solution and improves inking uniformity and transfer. The reimageable surface layer may be comprised of polydimethylsiloxane (silicone), and may optionally have particulate radiation sensitive material disbursed therein to promote absorption, and hence heating, from an optical source.
    • 可变数据光刻系统包括改进的成像构件,阻尼溶液子系统,图案化子系统,着墨子系统和图像传输子系统。 成像构件包括可重复成像的表面层,其包含聚合物,可再成像表面具有峰谷的0.10-4.0μm范围内的表面粗糙度Ra和小于20μm的峰谷最近相邻平均距离。 可以提供结构安装层,可重新成像的表面层直接或间接连接到中间层。 相对粗糙的表面有助于润湿溶液的保留,并改善着墨均匀性和转印。 可再成像的表面层可以由聚二甲基硅氧烷(硅氧烷)组成,并且可以任选地具有分散在其中的颗粒状辐射敏感材料,以促进从光源的吸收并因此加热。