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41. 发明授权

US09448483B2 Pattern shrink methods 有权
标题翻译：图案收缩方法
公开(公告)号：US09448483B2
公开(公告)日：2016-09-20
申请号：US14726238
申请日：2015-05-29
申请人： Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC
发明人： Phillip D. Hustad , Jong Keun Park , Jin Wuk Sung , James Heejun Park
IPC分类号： H01L21/31 , G03F7/32 , G03F7/20 , G03F7/38 , G03F7/40 , H01L21/027
CPC分类号： G03F7/325 , G03F7/0397 , G03F7/20 , G03F7/38 , G03F7/40 , G03F7/405 , H01L21/0273 , H01L21/0276
摘要： Pattern shrink methods comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) providing a resist pattern over the one or more layers to be patterned; (c) coating a shrink composition over the pattern, wherein the shrink composition comprises a polymer and an organic solvent, wherein the polymer comprises a group containing a hydrogen acceptor effective to form a bond with an acid group and/or an alcohol group at a surface of the resist pattern, and wherein the composition is free of crosslinkers; and (d) rinsing residual shrink composition from the substrate, leaving a portion of the polymer bonded to the resist pattern. Also provided are pattern shrink compositions, and coated substrates and electronic devices formed by the methods. The invention find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.
摘要翻译：图案收缩方法包括：（a）提供包括一个或多个待图案化层的半导体衬底; （b）在待图案化的一层或多层上提供抗蚀剂图案; （c）在所述图案上涂覆收缩组合物，其中所述收缩组合物包含聚合物和有机溶剂，其中所述聚合物包含含有有效与酸基团和/或醇基键键合的氢受体的基团抗蚀剂图案的表面，并且其中所述组合物不含交联剂; 和（d）从基材漂洗残余收缩组合物，使一部分聚合物结合到抗蚀剂图案上。还提供了图案收缩组合物，以及通过该方法形成的涂覆的基材和电子装置。本发明特别适用于制造用于提供高分辨率图案的半导体器件。

42. 发明授权

US09394411B2 Methods for annealing block copolymers and articles manufactured therefrom 有权
标题翻译：由此制备嵌段共聚物和制品的方法
公开(公告)号：US09394411B2
公开(公告)日：2016-07-19
申请号：US14580300
申请日：2014-12-23
申请人： Dow Global Technologies LLC , ROHM AND HAAS ELECTRONIC MATERIALS LLC
发明人： Shih-Wei Chang , Jong Keun Park , John W. Kramer , Erin B. Vogel , Phillip D. Hustad , Peter Trefonas, III
IPC分类号： C08G77/442 , B29C71/00 , B29C71/02 , B29C59/14 , B81C1/00 , G03F7/00 , B29C59/02
CPC分类号： C08G77/442 , B29C59/14 , B29C71/0009 , B29C71/02 , B29C2059/023 , B29C2071/022 , B81C1/00 , G03F7/0002
摘要： Disclosed herein is a block copolymer comprising a first block derived from a vinyl aromatic monomer; where the vinyl aromatic monomer has at least one alkyl substitution on an aromatic ring; a second block derived from a siloxane monomer; where a chi parameter that measures interactions between the first block and the second block is 0.03 to 0.18 at a temperature of 200° C. Disclosed herein is a method comprising polymerizing a vinyl aromatic monomer to form a first block; and polymerizing a second block onto the first block to form a block copolymer; where the second block is derived by polymerizing a siloxane monomer; and where the block copolymer has a chi parameter of 0.03 to 0.18 at a temperature of 200° C.; where the chi parameter is a measure of interactions between the first block and the second block of the copolymer.
摘要翻译：本文公开了包含衍生自乙烯基芳族单体的第一嵌段的嵌段共聚物; 其中乙烯基芳族单体在芳环上具有至少一个烷基取代; 衍生自硅氧烷单体的第二嵌段; 其中测量第一块和第二嵌段之间的相互作用的chi参数在200℃的温度下为0.03至0.18。本文公开了一种方法，其包括聚合乙烯基芳族单体以形成第一嵌段; 并将第二嵌段聚合到所述第一嵌段上以形成嵌段共聚物; 其中第二嵌段通过聚合硅氧烷单体得到; 嵌段共聚物在200℃的温度下的chi参数为0.03〜0.18。其中chi参数是共聚物的第一嵌段和第二嵌段之间相互作用的量度。

43. 发明申请

US20150349212A1 NANOSTRUCTURE MATERIAL METHODS AND DEVICES 有权
公开(公告)号：US20150349212A1
公开(公告)日：2015-12-03
申请号：US14723433
申请日：2015-05-27
申请人： The Board of Trustees of the University of IIIinois , Dow Global Technologies LLC , Rohm and Haas Electronic Materials, LLC
发明人： Brian T. Cunningham , Gloria G. See , Peter Trefonas , Jong Keun Park , Kishori Deshpande , Jieqian Zhang , Jaebum Joo
IPC分类号： H01L33/50 , H01L33/02 , H01L33/00
CPC分类号： H01L33/50 , G02B6/00 , H01L27/322 , H01L31/0203 , H01L31/02327 , H01L31/054 , H01L33/005 , H01L33/02 , H01L2251/5369 , Y02E10/52
摘要： In one aspect, structures are provided comprising: a substrate having a first surface and a second surface; and a polymeric layer disposed on the first surface of the substrate, the polymeric layer comprising a polymer and a plurality of light-emitting nanocrystals; the polymeric layer having a patterned surface, the patterned surface having a patterned first region having a first plurality of recesses and a patterned second region having a second plurality of recesses, wherein the plurality of recesses in each region has a first periodicity in a first direction, and a second periodicity in a second direction which intersects the first direction, wherein the first periodicity of the first region is different from the first periodicity of the second region.

44. 发明申请

US20150179467A1 Methods of Forming Patterns 有权
标题翻译：形成模式的方法
公开(公告)号：US20150179467A1
公开(公告)日：2015-06-25
申请号：US14139582
申请日：2013-12-23
申请人： Micron Technology, Inc. , Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC
发明人： William R. Brown , Adam Olson , Kaveri Jain , Ho Seop Eom , Xue Gloria Chen , Nik Mirin , Dan Millward , Peter Trefonas, III , Phillip Dene Hustad , Jong Keun Park , Christopher Nam Lee
IPC分类号： H01L21/308
CPC分类号： H01L21/0274 , H01L21/0337 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/76816
摘要： Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.
摘要翻译：一些实施例包括形成图案的方法。在材料上形成第一个掩模。第一掩模具有在其中延伸的特征并且限定第一图案。第一种模式在特征分布上具有第一级的均匀性。在第一掩模之间并且在特征内形成刷层以使特征变窄以从第一掩模创建第二掩模。所述第二掩模具有比所述第一级别的均匀性更窄的所述窄化特征的第二级别的均匀性。图案从第二个掩模转移到材料中。

45. 发明申请

US20150166884A1 TRANSFORMATIVE WAVELENGTH CONVERSION MEDIUM 有权
标题翻译：变换波长转换介质
公开(公告)号：US20150166884A1
公开(公告)日：2015-06-18
申请号：US14550216
申请日：2014-11-21
申请人： Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC
发明人： Robert E. Hefner, Jr. , Kishori Deshpande , Maurice J. Marks , Peter Trefonas , Jong Keun Park , Jieqian Zhang
IPC分类号： C09K11/02 , H05B33/04 , C09K11/77
CPC分类号： C09K11/025 , C09K11/7728 , H01L33/502
摘要： A transformative wavelength conversion medium is provided, comprising: a phosphor; and, a curable liquid component, wherein the curable liquid component, comprises: an aliphatic resin component, wherein the aliphatic resin component has an average of at least two epoxide groups per molecule; and, a curing agent; wherein the curable liquid component contains less than 0.5 wt % of monoepoxide molecules (based on the total weight of the aliphatic resin component); wherein the curable liquid component contains 1 to 90 wt % of polyepoxide molecules containing at least three epoxide groups per molecule (based on the total weight of the aliphatic resin component); and, wherein the curable liquid component is a liquid at 25° C. and atmospheric pressure; wherein the phosphor is dispersed in the curable liquid component.
摘要翻译：提供变换波长转换介质，包括：磷光体; 以及可固化液体组分，其中所述可固化液体组分包含：脂族树脂组分，其中所述脂族树脂组分每分子平均具有至少两个环氧基团; 和固化剂; 其中可固化液体组分含有小于0.5重量％的单环氧化物分子（基于脂族树脂组分的总重量）; 其中所述可固化液体组分包含每分子含有至少三个环氧基团的聚环氧化物分子的1-90wt％（基于所述脂族树脂组分的总重量）; 并且其中所述可固化液体组分在25℃和大气压下为液体; 其中所述荧光体分散在所述可固化液体组分中。

46. 发明申请

US20200209743A1 COMPOSITION FOR PREPARING THICK FILM PHOTOREST, THICK FILM PHOTORESIST, AND PROCESS OF PREPARING THE SAME 审中-公开
公开(公告)号：US20200209743A1
公开(公告)日：2020-07-02
申请号：US16236952
申请日：2018-12-31
申请人： ROHM AND HAAS ELECTRONIC MATERIALS LLC
发明人： Tomas Marangoni , Mingqi Li , Jong Keun Park , Emad Aqad , Amy M. Kwok
IPC分类号： G03F7/038 , G03F7/004
摘要： A photoresist composition, including a polymer having a C6-30 hydroxyaromatic group, a solvent, and a sulfonium salt having Formula (I): wherein, in Formula (I), R, R1 to R8, X, n, and Rf are the same as described in the specification.

47. 发明授权

US09482945B2 Photoresist compositions and methods of forming photolithographic patterns 有权
公开(公告)号：US09482945B2
公开(公告)日：2016-11-01
申请号：US14881760
申请日：2015-10-13
申请人： Rohm and Haas Electronic Materials LLC
发明人： Jong Keun Park , Christopher Nam Lee , Cecily Andes , Deyan Wang
IPC分类号： G03F7/039 , G03F7/20 , G03F7/038 , G03F7/004 , G03F7/30
CPC分类号： G03F7/038 , G03F7/004 , G03F7/0392 , G03F7/20 , G03F7/2041 , G03F7/30
摘要： Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The photoresist compositions include one or more polymer additive that contains a basic moiety and which is substantially non-miscible with a resin component of the resist. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

48. 发明授权

US09458348B2 Photoresist overcoat compositions and methods of forming electronic devices 有权
公开(公告)号：US09458348B2
公开(公告)日：2016-10-04
申请号：US14938340
申请日：2015-11-11
申请人： Rohm and Haas Electronic Materials LLC
发明人： Young Cheol Bae , Rosemary Bell , Jong Keun Park , Seung-Hyun Lee
IPC分类号： G03F7/11 , C09D133/16 , G03F7/004 , G03F7/20 , G03F7/30 , H01L21/308 , G03F7/32 , C08K5/17 , C08K5/3415 , C08K5/3435 , C09D133/10 , G03F7/16
CPC分类号： C09D133/16 , C08K5/17 , C08K5/3415 , C08K5/3435 , C09D133/10 , G03F7/004 , G03F7/11 , G03F7/16 , G03F7/20 , G03F7/2041 , G03F7/30 , G03F7/325 , H01L21/3081 , Y10S430/114 , Y10S430/12
摘要： Provided are photoresist overcoat compositions, substrates coated with the overcoat compositions and methods of forming electronic devices by a negative tone development process. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.

49. 发明申请

US20160041467A1 PHOTOLITHOGRAPHIC METHODS 有权
公开(公告)号：US20160041467A1
公开(公告)日：2016-02-11
申请号：US14826344
申请日：2015-08-14
申请人： Rohm and Haas Electronic Materials LLC
发明人： Young Cheol Bae , Rosemary Bell , Jong Keun Park , Seung-Hyun Lee
IPC分类号： G03F7/11 , G03F7/20 , G03F7/32 , G03F7/16
CPC分类号： G03F7/11 , G03F7/0397 , G03F7/168 , G03F7/20 , G03F7/2041 , G03F7/325 , H01L21/3081
摘要： Provided are photoresist overcoat compositions, substrates coated with the overcoat compositions and methods of forming electronic devices by a negative tone development process. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.

50. 发明授权

US09212293B2 Photoresist overcoat compositions and methods of forming electronic devices 有权
标题翻译：光刻胶外涂层组合物和形成电子器件的方法
公开(公告)号：US09212293B2
公开(公告)日：2015-12-15
申请号：US14559691
申请日：2014-12-03
申请人： Rohm and Haas Electronic Materials LLC
发明人： Young Cheol Bae , Rosemary Bell , Jong Keun Park , Seung-Hyun Lee
IPC分类号： G03F7/11 , C09D133/16 , G03F7/004 , G03F7/20 , G03F7/30 , C08K5/17 , C08K5/3415 , C08K5/3435 , C09D133/10 , H01L21/308 , G03F7/32
CPC分类号： C09D133/16 , C08K5/17 , C08K5/3415 , C08K5/3435 , C09D133/10 , G03F7/004 , G03F7/11 , G03F7/16 , G03F7/20 , G03F7/2041 , G03F7/30 , G03F7/325 , H01L21/3081 , Y10S430/114 , Y10S430/12
摘要： Provided are photoresist overcoat compositions, substrates coated with the overcoat compositions and methods of forming electronic devices by a negative tone development process. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.
摘要翻译：提供光刻胶外涂层组合物，涂覆有外涂层组合物的基材和通过负色调显影方法形成电子器件的方法。组合物，涂覆的基底和方法在半导体器件的制造中特别适用。

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