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41. 发明授权

US08999064B2 Apparatus for forming thin film 有权
标题翻译：用于形成薄膜的装置
公开(公告)号：US08999064B2
公开(公告)日：2015-04-07
申请号：US13179463
申请日：2011-07-08
申请人： Sang-Woo Lee
发明人： Sang-Woo Lee
IPC分类号： C23C16/00 , C23C14/24 , C23C14/12
CPC分类号： C23C14/243 , C23C14/12
摘要： A thin film forming apparatus according to the embodiment includes a plurality of vapor deposition sources respectively separated from each other, a plurality of nozzle bodies connected to upper portions of the respective vapor deposition sources, and a plurality of nozzles connected to upper portions of the respective nozzle bodies. A nozzle hole of each of the nozzles is formed on a same vapor deposition line. Thus, according to the embodiment, the first organic material and the second organic material respectively sprayed through a first nozzle hole and a second nozzle hole can be uniformly mixed by disposing the first nozzle hole and the second nozzle on the same vapor deposition line.
摘要翻译：根据实施例的薄膜形成装置包括分别彼此分离的多个气相沉积源，连接到各个蒸镀源的上部的多个喷嘴体，以及连接到各个蒸镀源的上部的多个喷嘴喷嘴体。每个喷嘴的喷嘴孔形成在相同的蒸镀线上。因此，根据本实施例，通过将第一喷嘴孔和第二喷嘴设置在相同的蒸镀线上，能够均匀地混合通过第一喷嘴孔和第二喷嘴孔喷射的第一有机材料和第二有机材料。

42. 发明授权

US08626070B2 Apparatus and method for mitigating inter-cell interference in multiple antenna system 有权
标题翻译：减轻多天线系统中小区间干扰的装置和方法
公开(公告)号：US08626070B2
公开(公告)日：2014-01-07
申请号：US13045922
申请日：2011-03-11
申请人： Sang-Woo Lee , Hee-Won Kang , Syuangfeng Han , David Mazzarese
发明人： Sang-Woo Lee , Hee-Won Kang , Syuangfeng Han , David Mazzarese
IPC分类号： H04B1/00 , H04B15/00
CPC分类号： H04L5/0032 , H04B7/024 , H04B7/0417 , H04B7/0456 , H04B7/0639 , H04W24/02 , H04W72/0406 , H04W72/082
摘要： An apparatus and method for mitigating inter-cell interference in a Multiple Input Multiple Output (MIMO) system are provided. The method includes allocating a serving band for providing service to at least one Mobile Station (MS) through scheduling, receiving at least one request set for at least one neighboring cell, from at least one MS, updating the at least one request set considering a serving band of each MS, and transmitting the updated at least one request set to the at least one neighboring cell. The request set includes at least one piece of information among a band and Precoding Matrix Index (PMI) for making a use restriction request to a neighboring cell that exerts interference on an MS.
摘要翻译：提供了一种用于减轻多输入多输出（MIMO）系统中的小区间干扰的装置和方法。该方法包括：通过调度来分配用于向至少一个移动台（MS）提供服务的服务频带，从至少一个MS接收至少一个相邻小区的至少一个请求集，从而考虑到并且将更新的至少一个请求集发送到至少一个相邻小区。请求集合包括用于对在MS上施加干扰的相邻小区进行使用限制请求的频带和预编码矩阵索引（PMI）中的至少一条信息。

43. 发明授权

US08598024B2 Fabricating method of metal silicide layer, fabricating method of semiconductor device using the same and semiconductor device fabricated using the method 有权
标题翻译：金属硅化物层的制造方法，使用其的半导体器件的制造方法以及使用该方法制造的半导体器件
公开(公告)号：US08598024B2
公开(公告)日：2013-12-03
申请号：US13239521
申请日：2011-09-22
申请人： Jin-Bum Kim , Chul-Sung Kim , Sang-Woo Lee , Yu-Gyun Shin
发明人： Jin-Bum Kim , Chul-Sung Kim , Sang-Woo Lee , Yu-Gyun Shin
IPC分类号： H01L21/425
CPC分类号： H01L29/7833 , H01L21/28506 , H01L21/28518 , H01L21/823814 , H01L29/456 , H01L29/6659
摘要： A method of fabricating a metal silicide layer includes forming a metal layer on a substrate, and forming a pre-metal silicide layer by reacting the substrate with the metal layer by performing a first annealing process on the substrate. The method also includes implanting silicon into the substrate using a gas cluster ion beam (GCIB) process, and changing the pre-metal silicide layer into a metal silicide layer by performing a second annealing process on the substrate.
摘要翻译：制造金属硅化物层的方法包括在基板上形成金属层，并且通过在基板上进行第一退火处理使基板与金属层反应来形成预金属硅化物层。该方法还包括使用气体簇离子束（GCIB）工艺将硅注入到衬底中，并且通过在衬底上执行第二退火工艺将前金属硅化物层改变为金属硅化物层。

44. 发明授权

US08494088B2 Transmitting/receiving apparatus and method thereof in codebook based multiple antenna system 有权
标题翻译：发射/接收装置及其方法在基于码本的多天线系统中
公开(公告)号：US08494088B2
公开(公告)日：2013-07-23
申请号：US12768061
申请日：2010-04-27
申请人： David Mazzarese , Bruno Clerckx , Sang-Woo Lee
发明人： David Mazzarese , Bruno Clerckx , Sang-Woo Lee
IPC分类号： H04B7/04
CPC分类号： H04B7/0417 , H04B7/0478 , H04B7/0486 , H04B7/063 , H04B7/0632
摘要： A transmission/reception apparatus and a method thereof in a codebook-based multiple antenna system is provided. In a transmission method in a codebook-based Multiple Input Multiple Output (MIMO) system, feedback information is received from a receiver. A downlink Open-Loop Single User MIMO (OL SU-MIMO) codebook subset is determined within a base cookbook based on the feedback information. At least one data stream is transmitted via at least one antenna using the determined downlink OL SU-MIMO codebook subset.
摘要翻译：提供了一种基于码本的多天线系统的发送/接收装置及其方法。在基于码本的多输入多输出（MIMO）系统中的传输方法中，从接收机接收反馈信息。基于反馈信息，在基本食谱中确定下行链路开环单用户MIMO（OL SU-MIMO）码本子集。使用所确定的下行链路OL SU-MIMO码本子集，经由至少一个天线发送至少一个数据流。

45. 发明授权

US08410683B2 Organic light emitting diode display and method for manufacturing the same 有权
标题翻译：有机发光二极管显示器及其制造方法
公开(公告)号：US08410683B2
公开(公告)日：2013-04-02
申请号：US12505880
申请日：2009-07-20
申请人： Jung-Bae Song , Un-Cheol Sung , Sung-Hun Lee , Beohm-Rock Choi , Jung-Soo Rhee , Sang-Woo Lee , Ji-Hye Choi , Jung-Yeon Kim
发明人： Jung-Bae Song , Un-Cheol Sung , Sung-Hun Lee , Beohm-Rock Choi , Jung-Soo Rhee , Sang-Woo Lee , Ji-Hye Choi , Jung-Yeon Kim
IPC分类号： H01J1/62
CPC分类号： H01L51/5265 , H01L27/3211 , H01L51/0092 , H01L51/5012 , H01L51/5215
摘要： An organic light emitting device and a manufacturing method thereof is provided. The organic light emitting device includes a first pixel that displays a first color, a second pixel that displays a second color, and a third pixel that displays a third color. The first pixel, the second pixel and the third pixel together form one pixel. Each of the first pixel, second pixel, and third pixel includes a pixel electrode having a transflective electrode, an organic emission layer on the pixel electrode that displays the first color, a common electrode on the third color organic emission layer, and a transparent supplementary member between the pixel electrode and the common electrode.
摘要翻译：提供了一种有机发光器件及其制造方法。有机发光器件包括显示第一颜色的第一像素，显示第二颜色的第二像素和显示第三颜色的第三像素。第一像素，第二像素和第三像素一起形成一个像素。第一像素，第二像素和第三像素中的每一个包括具有透反射电极的像素电极，显示第一颜色的像素电极上的有机发射层，第三有机发光层上的公共电极和透明补充像素电极和公共电极之间的部件。

46. 发明授权

US08341414B2 License managing method and device 有权
标题翻译：许可证管理方法和设备
公开(公告)号：US08341414B2
公开(公告)日：2012-12-25
申请号：US12617185
申请日：2009-11-12
申请人： Sang-Woo Lee , Sin Hyo Kim , Byung Ho Chung , Hyunsook Cho
发明人： Sang-Woo Lee , Sin Hyo Kim , Byung Ho Chung , Hyunsook Cho
IPC分类号： H04L9/32
CPC分类号： G06F21/10
摘要： A license managing device sets a security area for storing a license file, maintains the security area as an encoded file in an inactive state of the security area by encoding the security area, maintains the security area as a directory in an active state of the security area by decoding the security area, and encodes a license file by using a file encoding key according to the user's request and stores the same in a security area in an active state of the security area.
摘要翻译：许可证管理装置设置用于存储许可证文件的安全区域，通过对安全区域进行编码将安全区域维护为安全区域的非活动状态，将安全区域维护为安全区域的活动状态的目录区域，并且根据用户的请求使用文件编码密钥对许可证文件进行编码，并将其存储在安全区域的活动状态的安全区域中。

47. 发明授权

US08211793B2 Structures electrically connecting aluminum and copper interconnections and methods of forming the same 有权
标题翻译：电连接铝和铜互连的结构及其形成方法
公开(公告)号：US08211793B2
公开(公告)日：2012-07-03
申请号：US12714704
申请日：2010-03-01
申请人： Jong-Myeong Lee , Sang-Woo Lee , Gil-Heyun Choi , Jong-Won Hong , Kyung-In Choi , Hyun-Bae Lee
发明人： Jong-Myeong Lee , Sang-Woo Lee , Gil-Heyun Choi , Jong-Won Hong , Kyung-In Choi , Hyun-Bae Lee
IPC分类号： H01L21/4763
CPC分类号： H01L21/76804 , H01L21/76843 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A structure and formation method for electrically connecting aluminum and copper interconnections stabilize a semiconductor metallization process using an inner shape electrically connecting the aluminum and copper interconnections. To this end, a copper interconnection is disposed on a semiconductor substrate. An interconnection induction layer and an interconnection insertion layer are sequentially formed on the copper interconnection to have a contact hole exposing the copper interconnection. An upper diameter of the contact hole may be formed to be larger than a lower diameter thereof. A barrier layer and an aluminum interconnection are filled in the contact hole. The aluminum interconnection is formed not to directly contact the copper interconnection through the contact hole.
摘要翻译：用于电连接铝和铜互连的结构和形成方法使用电连接铝和铜互连的内部形状来稳定半导体金属化工艺。为此，铜互连设置在半导体衬底上。互连感应层和互连插入层依次形成在铜互连上以具有暴露铜互连的接触孔。接触孔的上直径可以形成为大于其直径。阻挡层和铝互连填充在接触孔中。铝互连形成为不通过接触孔直接接触铜互连。

48. 发明申请

US20120083089A1 FABRICATING METHOD OF METAL SILICIDE LAYER, FABRICATING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME AND SEMICONDUCTOR DEVICE FABRICATED USING THE METHOD 有权
标题翻译：金属硅化物层的制造方法，使用其的半导体器件的制造方法和使用该方法制造的半导体器件
公开(公告)号：US20120083089A1
公开(公告)日：2012-04-05
申请号：US13239521
申请日：2011-09-22
申请人： Jin-Bum KIM , Chul-Sung Kim , Sang-Woo Lee , Yu-Gyun Shin
发明人： Jin-Bum KIM , Chul-Sung Kim , Sang-Woo Lee , Yu-Gyun Shin
IPC分类号： H01L21/28 , H01L21/22
CPC分类号： H01L29/7833 , H01L21/28506 , H01L21/28518 , H01L21/823814 , H01L29/456 , H01L29/6659
摘要： A method of fabricating a metal silicide layer includes forming a metal layer on a substrate, and forming a pre-metal silicide layer by reacting the substrate with the metal layer by performing a first annealing process on the substrate. The method also includes implanting silicon into the substrate using a gas cluster ion beam (GCIB) process, and changing the pre-metal silicide layer into a metal silicide layer by performing a second annealing process on the substrate.
摘要翻译：制造金属硅化物层的方法包括在基板上形成金属层，并且通过在基板上进行第一退火处理使基板与金属层反应来形成预金属硅化物层。该方法还包括使用气体簇离子束（GCIB）工艺将硅注入到衬底中，并且通过在衬底上执行第二退火工艺将前金属硅化物层改变为金属硅化物层。

49. 发明申请

US20120012969A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120012969A1
公开(公告)日：2012-01-19
申请号：US13240599
申请日：2011-09-22
申请人： Jin-Ho Park , Gil-Heyun Choi , Sang-Woo Lee , Ho-Ki Lee
发明人： Jin-Ho Park , Gil-Heyun Choi , Sang-Woo Lee , Ho-Ki Lee
IPC分类号： H01L27/108
CPC分类号： H01L23/485 , H01L21/28562 , H01L21/76846 , H01L21/76865 , H01L27/10891 , H01L2924/0002 , H01L2924/00
摘要： In a method of forming a wiring structure for a semiconductor device, an insulation layer is formed on a semiconductor substrate on which a plurality of conductive structures is positioned. An upper surface of the insulation layer is planarized and spaces between the conductive structures are filled with the insulation layer. The insulation layer is partially removed from the substrate to form at least one opening through which the substrate is partially exposed. A residual metal layer is formed on a bottom and a lower portion of the sidewall of the at least one opening and a metal nitride layer is formed on the residual metal layer and an upper sidewall of the opening with a metal material. Accordingly, an upper portion of the barrier layer can be prevented from being removed in a planarization process for forming the metal plug.
摘要翻译：在形成半导体器件的布线结构的方法中，在其上定位有多个导电结构的半导体衬底上形成绝缘层。绝缘层的上表面被平坦化，并且导电结构之间的空间被绝缘层填充。绝缘层从衬底部分地移除以形成至少一个开口，衬底通过该开口被部分暴露。在所述至少一个开口的侧壁的底部和下部形成残余金属层，并且在所述残余金属层和所述开口的上侧壁上用金属材料形成金属氮化物层。因此，可以防止在用于形成金属插塞的平坦化处理中去除阻挡层的上部。

50. 发明授权

US08030204B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08030204B2
公开(公告)日：2011-10-04
申请号：US12217932
申请日：2008-07-10
申请人： Jin-Ho Park , Gil-Heyun Choi , Sang-Woo Lee , Ho-Ki Lee
发明人： Jin-Ho Park , Gil-Heyun Choi , Sang-Woo Lee , Ho-Ki Lee
IPC分类号： H01L21/4763
CPC分类号： H01L23/485 , H01L21/28562 , H01L21/76846 , H01L21/76865 , H01L27/10891 , H01L2924/0002 , H01L2924/00
摘要： In a method of forming a wiring structure for a semiconductor device, an insulation layer is formed on a semiconductor substrate on which a plurality of conductive structures is positioned. An upper surface of the insulation layer is planarized and spaces between the conductive structures are filled with the insulation layer. The insulation layer is partially removed from the substrate to form at least one opening through which the substrate is partially exposed. A residual metal layer is formed on a bottom and a lower portion of the sidewall of the at least one opening and a metal nitride layer is formed on the residual metal layer and an upper sidewall of the opening with a metal material. Accordingly, an upper portion of the barrier layer can be prevented from being removed in a planarization process for forming the metal plug.
摘要翻译：在形成半导体器件的布线结构的方法中，在其上定位有多个导电结构的半导体衬底上形成绝缘层。绝缘层的上表面被平坦化，并且导电结构之间的空间被绝缘层填充。绝缘层从衬底部分地移除以形成至少一个开口，衬底通过该开口被部分暴露。在所述至少一个开口的侧壁的底部和下部形成残余金属层，并且在所述残余金属层和所述开口的上侧壁上用金属材料形成金属氮化物层。因此，可以防止在用于形成金属插塞的平坦化处理中去除阻挡层的上部。

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