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41. 发明申请

US20130180842A1 METHOD FOR REDUCING GRAPHITE OXIDE 审中-公开
标题翻译：减少石墨氧化物的方法
公开(公告)号：US20130180842A1
公开(公告)日：2013-07-18
申请号：US13352614
申请日：2012-01-18
申请人： Thomas Nelson Blanton , Debasis Majumdar , E. Steven Brandt , Deepak Shukla
发明人： Thomas Nelson Blanton , Debasis Majumdar , E. Steven Brandt , Deepak Shukla
IPC分类号： C07B31/00
CPC分类号： C01B32/184 , C01B32/23
摘要： Graphite oxide can be converted to its reduced form (r-GO) using exposing radiation having a peak wavelength (λmax) of less than 400 nm, and even less than 1 nm (X-rays). This conversion method is efficient and can be carried out with various forms of graphite oxide samples, with or without simultaneous application of heat, below atmospheric pressure, or in a reducing environment.
摘要翻译：使用峰值波长（lambdamax）小于400nm，甚至小于1nm（X射线）的曝光辐射，石墨氧化物可以转化成其还原形式（r-GO）。该转化方法是有效的并且可以用各种形式的氧化石墨样品进行，具有或不具有同时施加的热量，低于大气压或在还原环境中。

42. 发明授权

US08399533B2 Photocurable compositions containing N-oxyazinium salt photoinitiators 有权
标题翻译：含有N-氧嗪鎓盐光引发剂的光固化性组合物
公开(公告)号：US08399533B2
公开(公告)日：2013-03-19
申请号：US12946074
申请日：2010-11-15
申请人： Deepak Shukla
发明人： Deepak Shukla
IPC分类号： C08G59/68 , C08F20/22 , C08F299/02 , C08F2/50
CPC分类号： C08F2/50
摘要： A photocurable composition includes at least one N-oxyazinium salt photoinitiator, a photosensitizer for the N-oxyazinium salt photoinitiator, an N-oxyazinium salt efficiency amplifier, and one or more photocurable acrylates. This composition can be cured using irradiation under high efficiency. Curing can be carried out in oxygen-containing environment.
摘要翻译：光固化性组合物包括至少一种N-氧嗪鎓盐引发剂，N-氧嗪鎓盐引发剂的光敏剂，N-氧嗪鎓盐效率放大器和一种或多种可光固化的丙烯酸酯。该组合物可以高效率地使用照射而固化。固化可在含氧环境中进行。

43. 发明申请

US20120295999A1 PHOTOINITIATOR AND PHOTOCURABLE COMPOSITIONS AND USES 审中-公开
标题翻译：光敏剂和光致抗蚀剂组合物和用途
公开(公告)号：US20120295999A1
公开(公告)日：2012-11-22
申请号：US13108246
申请日：2011-05-16
申请人： Deepak Shukla
发明人： Deepak Shukla
IPC分类号： C08F2/50 , C09K3/00 , C08F20/18
CPC分类号： C08F2/50
摘要： The photocuring efficiency of an N-oxyazinium salt photoinitiator is increased by mixing it with an organic phosphine as a photoinitiator efficiency amplifier. This mixture or photoinitiator composition can be used to cure acrylates or other photocurable compounds, particularly in an oxygen-containing environment.
摘要翻译：通过将其与作为光引发剂效率放大器的有机膦混合来增加N-氧嗪鎓盐引发剂的光固化效率。该混合物或光引发剂组合物可用于固化丙烯酸酯或其它可光固化的化合物，特别是在含氧环境中。

44. 发明授权

US07981719B2 N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors 有权
标题翻译： N，N'-二（芳基烷基）取代的萘基四羧酸二酰亚胺化合物作为薄膜晶体管的n型半导体材料
公开(公告)号：US07981719B2
公开(公告)日：2011-07-19
申请号：US12474533
申请日：2009-05-29
申请人： Deepak Shukla , Shelby F. Nelson , Diane C. Freeman
发明人： Deepak Shukla , Shelby F. Nelson , Diane C. Freeman
IPC分类号： H01L51/40
CPC分类号： H01L51/0053 , B82Y10/00 , B82Y30/00 , C09B57/08 , H01L51/0529 , H01L51/0545 , Y02E10/549
摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted arylalkyl moiety. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
摘要翻译：一种薄膜晶体管包括一层有机半导体材料，它包含一个四羧酸二酰亚胺萘系化合物，它具有连接到每个酰亚胺氮原子上的取代或未取代的芳烷基部分。这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。

45. 发明授权

US07642035B2 Sensitized photochemical switching for cholesteric liquid crystal displays 失效
公开(公告)号：US07642035B2
公开(公告)日：2010-01-05
申请号：US11403970
申请日：2006-04-13
申请人： Deepak Shukla , Krishnan Chari
发明人： Deepak Shukla , Krishnan Chari
IPC分类号： G11B7/244 , G11B7/245 , C09K19/58 , C09K19/52 , G02B6/00 , C09K19/38 , C09K19/36
CPC分类号： C09K19/586 , C09K19/588 , Y10T428/10 , Y10T428/1036 , Y10T428/1055
摘要： The present invention relates to photo-tunable dopant compositions comprising a photo-reactive chiral compound capable of undergoing a photochemical reaction resulting in the loss of chirality, and a triplet sensitizer. The present invention also relates to a display comprising a substrate, a liquid crystalline layer thereon, wherein the liquid crystalline layer comprises a nematic host, at least one chiral dopant, a photo-reacted compound, and a triplet sensitizer, and at least one transparent conductive layer. The present invention also relates to a method of tuning a cholesteric liquid crystal material comprising providing at least one mesogenic compound, at least one triplet sensitizer, and at least one photo-reactive chiral compound; combining the at least one mesogenic compound, at least one triplet sensitizer, and at least one photo-reactive chiral compound to form a mixture; and irradiating the mixture for a period of time.

46. 发明授权

US07471437B2 Electrochromic materials and devices 有权
标题翻译：电致变色材料和器件
公开(公告)号：US07471437B2
公开(公告)日：2008-12-30
申请号：US10813885
申请日：2004-03-31
申请人： Jerome R. Lenhard , Deepak Shukla
发明人： Jerome R. Lenhard , Deepak Shukla
IPC分类号： G02F1/15
CPC分类号： C09K9/02 , C09K2211/1092
摘要： The present invention relates to an electrochromic material, and a device utilizing the electrochromic material, comprising a substituted-1,1-dioxo-thiopyran of the general structure I: wherein: X is carbon, nitrogen, oxygen, or sulfur; n is 0, 1 or 2; R3 is independently an electron withdrawing group or a substituted or unsubstituted alky or aryl group; R1 and R5 each independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group; and R2 and R4 each independently represent hydrogen, or an electron withdrawing group, or a substituted or unsubstituted alkyl group.
摘要翻译：本发明涉及一种电致变色材料，以及一种利用电致变色材料的装置，其包含通式I的取代的1,1-二氧代噻喃，其中：X为碳，氮，氧或硫; n为0,1或2; R3独立地是吸电子基团或取代或未取代的烷基或芳基; R 1和R 5各自独立地表示取代或未取代的烷基，取代或未取代的芳基或取代或未取代的杂环基; R2和R4各自独立地表示氢或吸电子基团，或取代或未取代的烷基。

47. 发明授权

US07326956B2 Fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors 有权
标题翻译：含氟N，N'-二芳基苝基四羧酸二酰亚胺化合物作为薄膜晶体管的N型半导体材料
公开(公告)号：US07326956B2
公开(公告)日：2008-02-05
申请号：US11015897
申请日：2004-12-17
申请人： Deepak Shukla , Diane C. Freeman , Shelby F. Nelson
发明人： Deepak Shukla , Diane C. Freeman , Shelby F. Nelson
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L51/0053 , C09B5/62 , H01L51/0067 , H01L51/0545 , H01L51/5048 , Y02E10/549 , Y02P70/521
摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a carbocyclic or heterocyclic aromatic ring system substituted with one or more fluorine-containing groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
摘要翻译：一种薄膜晶体管包括一层有机半导体材料，它包括四羧酸二酰亚胺3,4,9,10-苝基化合物，它具有连接到每个酰亚胺氮原子上的碳环或杂环芳族环系统，被一个或多个氟取代包含组。这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。进一步公开的是用于制造交流薄膜晶体管器件的方法，优选通过升华或溶液相沉积到衬底上，其中衬底温度不超过100℃。

48. 发明授权

US07198977B2 N,N′-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors 有权
标题翻译： N，N'-二（苯基烷基）取代的苝基四羧酸二酰亚胺化合物作为薄膜晶体管的n型半导体材料
公开(公告)号：US07198977B2
公开(公告)日：2007-04-03
申请号：US11021739
申请日：2004-12-21
申请人： Deepak Shukla , Diane C. Freeman , Shelby F. Nelson
发明人： Deepak Shukla , Diane C. Freeman , Shelby F. Nelson
IPC分类号： H01L51/40
CPC分类号： H01L51/0053 , B82Y30/00 , C09B5/62 , H01L51/0545 , Y02E10/549
摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a substituted or unsubsitituted phenylalkyl group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
摘要翻译：薄膜晶体管包括一层有机半导体材料，其包含四羧酸二酰亚胺3,4,9,10-苝基化合物，其具有连接到每个酰亚胺氮原子上的取代或未取代的苯基烷基。这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华或溶液相沉积到衬底上，其中衬底温度不超过100℃。

49. 发明申请

US20060131564A1 Fluorine-containing N,N'-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors 有权
标题翻译：含氟N，N'-二芳基苝基四羧酸二酰亚胺化合物作为薄膜晶体管的N型半导体材料
公开(公告)号：US20060131564A1
公开(公告)日：2006-06-22
申请号：US11015897
申请日：2004-12-17
申请人： Deepak Shukla , Diane Freeman , Shelby Nelson
发明人： Deepak Shukla , Diane Freeman , Shelby Nelson
IPC分类号： H01L29/08 , H01L29/04
CPC分类号： H01L51/0053 , C09B5/62 , H01L51/0067 , H01L51/0545 , H01L51/5048 , Y02E10/549 , Y02P70/521
摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a carbocyclic or heterocyclic aromatic ring system substituted with one or more fluorine-containing groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
摘要翻译：一种薄膜晶体管包括一层有机半导体材料，它包括四羧酸二酰亚胺3,4,9,10-苝基化合物，它具有连接到每个酰亚胺氮原子上的碳环或杂环芳族环系统，被一个或多个氟取代包含组。这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。进一步公开的是用于制造交流薄膜晶体管器件的方法，优选通过升华或溶液相沉积到衬底上，其中衬底温度不超过100℃。

50. 发明申请

US20060068123A1 Aligned liquid crystal layer containing onium salts and process for increasing the tilt 审中-公开
标题翻译：含有鎓盐的对准液晶层和增加倾斜的工艺
公开(公告)号：US20060068123A1
公开(公告)日：2006-03-30
申请号：US11282409
申请日：2005-11-18
申请人： Deepak Shukla , Thomas Welter , James Elman , Samir Farid
发明人： Deepak Shukla , Thomas Welter , James Elman , Samir Farid
IPC分类号： B05D3/00
CPC分类号： C09K19/582 , Y10T428/1005
摘要： A process for forming a fixed liquid crystal layer having a predetermined tilt on an orientation layer comprises: a) adding a predetermined amount of an onium salt to a liquid crystal pre-polymer coating solution containing a liquid crystal pre-polymer and a UV initiator selected from the group consisting of benzophenone and acetophenone and their derivatives; benzoin, benzoin ethers, benzil, benzil ketals, fluorenone, xanthanone, alpha and beta naphthyl carbonyl compounds and ketones; b) coating the solution over the orientation layer; c) drying the coating to form a layer; and then d) UV irradiating the layer to fix the liquid crystal molecules.
摘要翻译：在取向层上形成具有预定倾斜度的固定液晶层的方法包括：a）将预定量的鎓盐加入到含有液晶预聚物和选择的UV引发剂的液晶预聚物涂布溶液中由二苯甲酮和苯乙酮及其衍生物组成的组; 苯偶姻，苯偶姻醚，苯偶酰，苯偶酰缩酮，芴酮，呫吨酮，α和β萘基羰基化合物和酮; b）将溶液涂覆在取向层上; c）干燥涂层以形成层; 然后d）UV照射该层以固定液晶分子。

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