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    • 43. 发明授权
    • Asymmetrical, bidirectional triggering ESD structure
    • 不对称,双向触发ESD结构
    • US5780905A
    • 1998-07-14
    • US768358
    • 1996-12-17
    • Wayne T. ChenRoss E. TeggatzJulian Z. Chen
    • Wayne T. ChenRoss E. TeggatzJulian Z. Chen
    • H01L27/02H01L23/62
    • H01L27/0262
    • An ESD protection structure which includes, preferably a single semiconductor chip, a forward SCR for coupling across a source of potential and a reverse SCR for coupling across the same source of potential which is non-symmetrical to the forward SCR. The breakdown voltage of the forward SCR is different from the breakdown voltage of the reverse SCR. Each of the SCRs has a separate triggering mechanism. None of the anode, cathode and triggering elements of the forward SCR are common to the reverse SCR. A unidirectional device, preferably a Schottky diode, is disposed in the body of semiconductor material between the forward and reverse SCRs to prevent conduction from the body of semiconductor material when the source of potential across the SCRs is reversed.
    • 一种ESD保护结构,其优选地包括单个半导体芯片,用于跨越电位源耦合的正向SCR和用于跨过与正向SCR非对称的相同电位源耦合的反向SCR。 正向SCR的击穿电压不同于反向SCR的击穿电压。 每个SCR具有单独的触发机制。 正向SCR的阳极,阴极和触发元件都不是反向SCR共有的。 单向器件(优选肖特基二极管)设置在正向和反向SCR之间的半导体材料体内,以防止当跨越SCR的电位源反向时,半导体材料的主体导电。
    • 44. 发明授权
    • Non-volatile memory in power and linear integrated circuits
    • 电力和线性集成电路中的非易失性存储器
    • US5710515A
    • 1998-01-20
    • US480063
    • 1995-06-07
    • Ross E. TeggatzJoseph A. DevoreStephen L. SuttonGanapathy R. Subramaniam
    • Ross E. TeggatzJoseph A. DevoreStephen L. SuttonGanapathy R. Subramaniam
    • G01K7/01G01R31/28G01R31/30G01R31/3167H01L23/34G01R31/02G01R31/00G08B21/00
    • H01L23/34G01K7/01G01R31/30G01R31/3167H01L2924/0002
    • A testable temperature warning circuit (120) in an integrated circuit substrate (124) provides a warning if the substrate temperature exceeds a critical temperature. A programming circuit (140) controls a selection, circuit (128) to establish a programmably selectable temperature at either the critical temperature or a second predetermined temperature lower than the critical temperature to enable the warning circuit operation to be tested at a temperature lower than the critical temperature. In one embodiment, the selection circuit 128 comprises a current source that produces a voltage drop across the resistor 121 and base-emitter of the transistor 122 produces a substrate temperature indicating current of magnitude related to the temperature of the substrate. The substrate temperature indicating current at the second temperature is extrapolatingly related to the substrate temperature indicating current at the critical temperature. A method is also presented for testing a temperature warning circuit fabricated in an integrated circuit substrate.
    • 如果衬底温度超过临界温度,则集成电路衬底(124)中的可测温度警告电路(120)提供警告。 编程电路(140)控制选择电路(128)在临界温度或低于临界温度的第二预定温度下建立可编程选择的温度,以使报警电路操作能够在低于 临界温度。 在一个实施例中,选择电路128包括在电阻器121上产生电压降的电流源,并且晶体管122的基极 - 发射极产生指示与衬底温度相关的电流幅度的衬底温度。 指示在第二温度下的电流的衬底温度与指示临界温度下的电流的衬底温度外推相关。 还提出了一种用于测试在集成电路基板中制造的温度警告电路的方法。