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41. 发明申请

US20050169582A1 Optical isolator utilizing a micro-resonator 失效
标题翻译：光隔离器利用微谐振器
公开(公告)号：US20050169582A1
公开(公告)日：2005-08-04
申请号：US10768858
申请日：2004-01-29
申请人： Michael Tan , William Trutna , David Bour , Michael Leary
发明人： Michael Tan , William Trutna , David Bour , Michael Leary
IPC分类号： G02F1/09 , G02B6/26 , G02B6/34 , G02B27/28 , G02F1/095 , H04B10/00
CPC分类号： G02B6/29335 , G02B6/12007 , G02B6/2746 , G02B2006/12097 , G02B2006/12104 , G02F1/0955 , G02F2203/15
摘要： An optical isolator for coupling light from a first waveguide to a second waveguide is disclosed. The optical isolator utilizes a resonator coupled to the first and second optical waveguides. The resonator has a resonance at λ for light traveling from the first optical waveguide to the second optical waveguide; however, the resonator does not have a resonance at λ for light traveling from the second waveguide to the first waveguide. The resonator can use a layer of ferromagnetic material in an applied magnetic field. The magnetic field within the ferromagnetic material varies in strength and/or direction over the layer of ferromagnetic material. The magnetic field can be generated by an external magnetic field that varies over the layer of ferromagnetic material. Alternatively, the resonator can include a layer of ferromagnetic metal that overlies a portion of the layer of ferromagnetic material and a constant external magnetic field.
摘要翻译：公开了一种用于将来自第一波导的光耦合到第二波导的光隔离器。光隔离器利用耦合到第一和第二光波导的谐振器。谐振器对于从第一光波导到第二光波导的光的λ具有谐振; 然而，对于从第二波导传播到第一波导的光，谐振器在λ处不具有谐振。谐振器可以在施加的磁场中使用铁磁材料层。铁磁材料内的磁场在铁磁材料层上的强度和/或方向上变化。磁场可以由在铁磁材料层上变化的外部磁场产生。或者，谐振器可以包括铁磁金属层，其覆盖铁磁材料层的一部分和恒定的外部磁场。

42. 发明申请

US20110204376A1 GROWTH OF MULTI-JUNCTION LED FILM STACKS WITH MULTI-CHAMBERED EPITAXY SYSTEM 审中-公开
标题翻译：多层外延系统的多功能LED膜片的生长
公开(公告)号：US20110204376A1
公开(公告)日：2011-08-25
申请号：US12871617
申请日：2010-08-30
申请人： Jie Su , David Bour
发明人： Jie Su , David Bour
IPC分类号： H01L33/30 , H01L21/20
CPC分类号： H01L25/0756 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L27/156 , H01L33/0016 , H01L33/007 , H01L33/08 , H01L2224/48137 , H01L2924/0002
摘要： Apparatus and method for growth of non-p-type GaN layers over p-type GaN layers. Embodiments include multi-junction LED film stacks, multi-junction LED devices paired into units and multi-junction LED arrays of the paired units. Epitaxial growths of p-type and non-p-type material layers are split between epitaxial chambers clustered onto a single platform to reduce p-type dopant cross-contamination. Arrayed multi-junction LED devices provide improved packing density and reduced blinking during AC operation.
摘要翻译：在p型GaN层上生长非p型GaN层的装置和方法。实施例包括配对单元的多结LED膜堆叠，多结LED器件和成对单元的多结LED阵列。将p型和非p型材料层的外延生长分为在单个平台上聚集的外延室之间以减少p型掺杂剂交叉污染。阵列多结LED器件在交流运行期间提供改进的封装密度和减少的闪烁。

43. 发明授权

US07674352B2 System and method for depositing a gaseous mixture onto a substrate surface using a showerhead apparatus 失效
标题翻译：使用喷头装置将气态混合物沉积到基材表面上的系统和方法
公开(公告)号：US07674352B2
公开(公告)日：2010-03-09
申请号：US11564198
申请日：2006-11-28
申请人： David Bour , Lori Washington , Sandeep Nijhawan , Ronald Stevens , Jacob Smith , Alexander Tam , Nyi Oo Myo , Steve Park , Rosemary Twist , Garry Kwong , Jie Su
发明人： David Bour , Lori Washington , Sandeep Nijhawan , Ronald Stevens , Jacob Smith , Alexander Tam , Nyi Oo Myo , Steve Park , Rosemary Twist , Garry Kwong , Jie Su
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/45514 , C23C16/45572 , C23C16/45574
摘要： A gaseous mixture is deposited onto a substrate surface using a showerhead. A first plenum of the showerhead has a plurality of channels fluidicly coupled with an interior of a processing chamber. A second plenum gas flows through a plurality of tubes extending from a second plenum of the showerhead through the channels into the interior of the processing chamber. The diameter of the tubes is smaller than the diameter of the channels such that a first plenum gas flows into the interior of the processing chamber through a space defined between the outer surface of the tubes and the surface of the channels. The length and diameter of the tubes determine the level of distribution and the molar ratio of the first gas and the second gas in the gaseous mixture that is deposited on the surface of the substrate.
摘要翻译：使用喷头将气体混合物沉积到基底表面上。喷头的第一增压室具有与处理室的内部流体耦合的多个通道。第二增压气体流过从喷头的第二增压室通过通道延伸到处理室内部的多个管。管的直径小于通道的直径，使得第一增压气体通过限定在管的外表面和通道表面之间的空间流入处理室的内部。管的长度和直径确定沉积在基底表面上的气态混合物中的分布水平和第一气体与第二气体的摩尔比。

44. 发明授权

US07560364B2 Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films 失效
标题翻译：位错特异性侧向外延生长以减少氮化物膜的位错密度
公开(公告)号：US07560364B2
公开(公告)日：2009-07-14
申请号：US11429084
申请日：2006-05-05
申请人： David Bour , Sandeep Nijhawan , Jacob Smith , Lori Washington
发明人： David Bour , Sandeep Nijhawan , Jacob Smith , Lori Washington
IPC分类号： H01L21/20
CPC分类号： C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L29/2003 , H01L33/007 , H01L33/025
摘要： In accordance with the present invention, improved methods for reducing the dislocation density of nitride epitaxial films are provided. Specifically, an in-situ etch treatment is provided to preferentially etch the dislocations of the nitride epitaxial layer to prevent threading of the dislocations through the nitride epitaxial layer. Subsequent to etching of the dislocations, an epitaxial layer overgrowth is performed. In certain embodiments, the etching of the dislocations occurs simultaneously with growth of the epitaxial layer. In other embodiments, a dielectric mask is deposited within the etch pits formed at the dislocations prior to the epitaxial layer overgrowth.
摘要翻译：根据本发明，提供了用于降低氮化物外延膜的位错密度的改进方法。具体地，提供了原位蚀刻处理以优先蚀刻氮化物外延层的位错，以防止通过氮化物外延层的位错穿透。在蚀刻位错之后，进行外延层过度生长。在某些实施例中，位错的蚀刻与外延层的生长同时发生。在其它实施例中，在外延层过度生长之前，在形成于位错处的蚀刻坑内沉积电介质掩模。

45. 发明申请

US20080206902A1 STRESS MEASUREMENTS DURING LARGE-MISMATCH EPITAXIAL PROCESSES 审中-公开
标题翻译：在大型MISMATCH外部过程中的应力测量
公开(公告)号：US20080206902A1
公开(公告)日：2008-08-28
申请号：US11678870
申请日：2007-02-26
申请人： David Bour , Jacob Grayson
发明人： David Bour , Jacob Grayson
IPC分类号： H01L21/66 , B05C11/00
CPC分类号： H01L22/12
摘要： A substrate is disposed within a processing chamber. A nitrogen precursor and a group-III precursor are flowed into the processing chamber. A layer is deposited over the substrate with a thermal chemical-vapor-deposition process at an elevated temperature within the processing chamber using the nitrogen precursor and the group-III precursor. Light beams are directed to a surface of the layer and light spots corresponding to reflections of the light beams are received from the surface at a position-sensitive detector. Positions of the light spots on the position-sensitive detector are determined from photocurrent induced in a photodiode in the position-sensitive detector. A curvature of the layer is determined from the positions of the light spots.
摘要翻译：衬底设置在处理室内。氮气前体和III族前体流入处理室。使用氮前体和III族前体，在处理室内的高温下，通过热化学气相沉积工艺在衬底上沉积一层。光束被引导到层的表面，并且在位置敏感检测器处从表面接收与光束的反射相对应的光点。位置敏感检测器上的光点的位置由在位置敏感检测器中的光电二极管中感应的光电流确定。从光斑的位置确定层的曲率。

46. 发明授权

US07399653B2 Nitride optoelectronic devices with backside deposition 失效
标题翻译：氮化物光电子器件具有背面沉积
公开(公告)号：US07399653B2
公开(公告)日：2008-07-15
申请号：US11414581
申请日：2006-04-28
申请人： David Bour , Jacob Smith , Jie Su , Sandeep Nijhawan
发明人： David Bour , Jacob Smith , Jie Su , Sandeep Nijhawan
IPC分类号： H01L21/00
CPC分类号： H01L33/007
摘要： Nitride optoelectronic devices that have asymmetric double-sided structures and methods fabricating such structures are disclosed. Two n-type III-N layers are formed simultaneously over opposite sides of a substrate with substantially the same composition. Thereafter, a p-type III-N active layer is formed over one of the n-type III-N layers but not over the other.
摘要翻译：公开了具有非对称双面结构的氮化物光电器件和制造这种结构的方法。两个n型III-N层同时形成在具有基本相同组成的衬底的相对侧上。此后，在n型III-N层之一上形成p型III-N有源层，而不是在另一层上形成p型III-N有源层。

47. 发明申请

US20080124817A1 STRESS MEASUREMENT AND STRESS BALANCE IN FILMS 失效
标题翻译：膜中的应力测量和应力平衡
公开(公告)号：US20080124817A1
公开(公告)日：2008-05-29
申请号：US11508523
申请日：2006-08-23
申请人： David Bour , Sandeep Nijhawan , Lori D. Washington , Jacob W. Smith
发明人： David Bour , Sandeep Nijhawan , Lori D. Washington , Jacob W. Smith
IPC分类号： H01L21/66 , C23C16/00
CPC分类号： H01L22/20 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L22/12 , H01L33/007
摘要： Methods and systems are provided of fabricating a compound nitride semiconductor structure. A substrate is disposed within a processing chamber into which a group-III precursor and a nitrogen precursor are flowed. A layer is deposited over the substrate with a thermal chemical-vapor-deposition process using the precursors. The substrate is transferred to a transfer chamber where a temperature and a curvature of the layer are measured. The substrate is then transferred to a second processing chamber where a second layer is deposited.
摘要翻译：提供了制造复合氮化物半导体结构的方法和系统。衬底设置在III族前体和氮前体流动的处理室内。通过使用前体的热化学气相沉积工艺将一层沉积在衬底上。将衬底转移到测量层的温度和曲率的转移室。然后将衬底转移到沉积第二层的第二处理室。

48. 发明授权

US07374960B1 Stress measurement and stress balance in films 失效
标题翻译：薄膜中的应力测量和应力平衡
公开(公告)号：US07374960B1
公开(公告)日：2008-05-20
申请号：US11508523
申请日：2006-08-23
申请人： David Bour , Sandeep Nijhawan , Lori D. Washington , Jacob W. Smith
发明人： David Bour , Sandeep Nijhawan , Lori D. Washington , Jacob W. Smith
IPC分类号： H01L21/00
CPC分类号： H01L22/20 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L22/12 , H01L33/007
摘要： Methods and systems are provided of fabricating a compound nitride semiconductor structure. A substrate is disposed within a processing chamber into which a group-III precursor and a nitrogen precursor are flowed. A layer is deposited over the substrate with a thermal chemical-vapor-deposition process using the precursors. The substrate is transferred to a transfer chamber where a temperature and a curvature of the layer are measured. The substrate is then transferred to a second processing chamber where a second layer is deposited.
摘要翻译：提供了制造复合氮化物半导体结构的方法和系统。衬底设置在III族前体和氮前体流动的处理室内。通过使用前体的热化学气相沉积工艺将一层沉积在衬底上。将衬底转移到测量层的温度和曲率的转移室。然后将衬底转移到沉积第二层的第二处理室。

49. 发明授权

US07364991B2 Buffer-layer treatment of MOCVD-grown nitride structures 失效
标题翻译： MOCVD生长氮化物结构的缓冲层处理
公开(公告)号：US07364991B2
公开(公告)日：2008-04-29
申请号：US11414012
申请日：2006-04-27
申请人： David Bour , Jacob Smith , Sandeep Nijhawan
发明人： David Bour , Jacob Smith , Sandeep Nijhawan
IPC分类号： H01L21/20 , H01L21/36 , H01L31/20
CPC分类号： H01L21/02513 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262
摘要： Methods are disclosed for fabricating a compound nitride semiconductor structure. An amorphous buffer layer that includes nitrogen and a group-III element is formed over a substrate disposed within a substrate processing chamber at a first temperature. The temperature within the chamber is increased to a second temperature at which the amorphous buffer layer coalesces into crystallites over the substrate. The substrate is exposed to a corrosive agent to destroy at least some of the crystallites. A crystalline nitride layer is formed over the substrate at a third temperature using the crystallites remaining after exposure to the corrosive agent as seed crystals. The third temperature is greater than the first temperature. The crystalline nitride layer also includes nitrogen and a group-III element.
摘要翻译：公开了用于制造复合氮化物半导体结构的方法。在第一温度下，在设置在基板处理室内的基板上形成包含氮和III族元素的非晶缓冲层。室内的温度增加到非晶缓冲层在衬底上聚结成微晶的第二温度。将基底暴露于腐蚀剂以破坏至少一些微晶。在第三温度下使用在作为晶种暴露于腐蚀剂之后残留的微晶，在衬底上形成结晶氮化物层。第三温度大于第一温度。结晶氮化物层还包括氮和III族元素。

50. 发明申请

US20080050889A1 Hotwall reactor and method for reducing particle formation in GaN MOCVD 审中-公开
标题翻译：热壁反应器和减少GaN MOCVD中颗粒形成的方法
公开(公告)号：US20080050889A1
公开(公告)日：2008-02-28
申请号：US11510107
申请日：2006-08-24
申请人： David Bour , Jacob Smith , Sandeep Nijhawan , Lori D. Washington
发明人： David Bour , Jacob Smith , Sandeep Nijhawan , Lori D. Washington
IPC分类号： H01L21/20
CPC分类号： C30B25/02 , C23C16/303 , C30B25/10 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/02381 , H01L21/02403 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67109 , H01L21/67115
摘要： Systems and methods to suppress the formation of parasitic particles during the deposition of a III-V nitride film with, e.g., metal-organic chemical vapor deposition (MOCVD) are described. In accordance with certain aspects of the invention, a hotwall reactor design and methods associated therewith, with wall temperatures similar to process temperatures, so as to create a substantially isothermal reaction chamber, may generally suppress parasitic particle formation and improve deposition performance.
摘要翻译：描述了在诸如金属 - 有机化学气相沉积（MOCVD）的III-V族氮化物膜的沉积期间抑制寄生颗粒形成的系统和方法。根据本发明的某些方面，与其相关的热壁反应器设计和与其相似的壁温度，以便产生基本上等温的反应室，通常可以抑制寄生颗粒形成并提高沉积性能。

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