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    • 41. 发明授权
    • Light emitting device and method of manufacturing the same
    • 发光元件及其制造方法
    • US07977691B2
    • 2011-07-12
    • US12630370
    • 2009-12-03
    • Jong Lam LeeJae Ho LeeYeo Jin YoonEu Jin HwangDae Won Kim
    • Jong Lam LeeJae Ho LeeYeo Jin YoonEu Jin HwangDae Won Kim
    • H01L27/15
    • H01L27/15H01L27/153H01L27/3281H01L33/08H01L33/20H01L33/24H01L33/28H01L33/32H01L33/385H01L33/44H01L33/62H01L51/5253H01L2224/45144H01L2224/48095H01L2224/48137H01L2933/0066H01L2924/00
    • The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention is provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.
    • 本发明涉及一种发光器件及其制造方法。 根据本发明,发光器件包括衬底,形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层,其中包括N型半导体层的侧表面 或P型半导体层的水平面为20〜80°的斜率。 此外,本发明提供了一种发光器件,其包括形成有多个发光单元的衬底,每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层,以及基座衬底翻转 芯片接合到基板上,其中一个发光单元的N型半导体层和另一个相邻的发光单元的P型半导体层彼此连接,并且至少包括P型半导体 发光单元的层与水平面的倾斜度为20〜80°。 此外,本发明提供一种制造发光器件的方法。 因此,具有发光效率,外部量子效率,提取效率等发光装置的特性得到提高,可靠性得到确保,能够发出高发光强度和亮度的光的优点。
    • 42. 发明授权
    • Light emitting device and method of manufacturing the same
    • 发光元件及其制造方法
    • US07951626B2
    • 2011-05-31
    • US12613275
    • 2009-11-05
    • Jong Lam LeeJae Ho LeeYeo Jin YoonEu Jin HwangDae Won Kim
    • Jong Lam LeeJae Ho LeeYeo Jin YoonEu Jin HwangDae Won Kim
    • H01L27/15
    • H01L27/15H01L27/153H01L27/3281H01L33/08H01L33/20H01L33/24H01L33/28H01L33/32H01L33/385H01L33/44H01L33/62H01L51/5253H01L2224/45144H01L2224/48095H01L2224/48137H01L2933/0066H01L2924/00
    • The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.
    • 本发明涉及一种发光器件及其制造方法。 根据本发明,发光器件包括衬底,形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层,其中包括N型半导体层的侧表面 或P型半导体层的水平面为20〜80°的斜率。 此外,本发明提供了一种发光器件,其包括形成有多个发光单元的衬底,每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层,以及基座衬底翻转 芯片接合到基板上,其中一个发光单元的N型半导体层和另一个相邻的发光单元的P型半导体层彼此连接,并且至少包括P型半导体 发光单元的层与水平面的倾斜度为20〜80°。 此外,本发明提供一种制造发光器件的方法。 因此,具有发光效率,外部量子效率,提取效率等发光装置的特性得到提高,可靠性得到确保,能够发出高发光强度和亮度的光的优点。
    • 46. 发明申请
    • Light Emitting Device and Method of Manufacturing the Same
    • 发光装置及其制造方法
    • US20080251796A1
    • 2008-10-16
    • US11993965
    • 2006-06-22
    • Jong Lam LeeJae Ho LeeYeo Jin YoonEu Jin HwangDae Won Kim
    • Jong Lam LeeJae Ho LeeYeo Jin YoonEu Jin HwangDae Won Kim
    • H01L33/00
    • H01L27/15H01L27/153H01L27/3281H01L33/08H01L33/20H01L33/24H01L33/28H01L33/32H01L33/385H01L33/44H01L33/62H01L51/5253H01L2224/45144H01L2224/48095H01L2224/48137H01L2933/0066H01L2924/00
    • The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semi-conductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.
    • 本发明涉及一种发光器件及其制造方法。 根据本发明,发光器件包括衬底,形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层,其中包括N型半导体层的侧表面 或P型半导体层的水平面为20〜80°的斜率。 此外,本发明提供了一种发光器件,其包括形成有多个发光单元的衬底,每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层,以及基座衬底翻转 芯片接合到基板上,其中一个发光单元的N型半导体层和另一个相邻发光单元的P型半导体层彼此连接,并且至少包括P- 发光单元的半导体层的类型与水平面的斜率为20〜80°。 此外,本发明提供一种制造发光器件的方法。 因此,具有发光效率,外部量子效率,提取效率等发光装置的特性得到提高,可靠性得到确保,能够发出高发光强度和亮度的光的优点。