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41. 发明申请

US20050059176A1 Process for making byte erasable devices having elements made with nanotubes 失效
标题翻译：用于制造具有由纳米管制成的元件的字节可擦除器件的过程
公开(公告)号：US20050059176A1
公开(公告)日：2005-03-17
申请号：US10824678
申请日：2004-04-15
申请人： Thomas Rueckes , Venkatachalam Jaiprakash , Claude Bertin
发明人： Thomas Rueckes , Venkatachalam Jaiprakash , Claude Bertin
IPC分类号： G11C13/02 , G11C23/00 , H01L51/00 , H01L21/00
CPC分类号： H01L51/0048 , B82Y10/00 , G11C13/025 , G11C23/00 , Y10S977/943
摘要： A method of making byte erasable devices having elements made with nanotubes. Under one aspect of the invention, a device is made having nanotube memory elements. A structure is provided having a plurality of transistors, each with a drain and a source with a defined channel region therebetween, each transistor further including a gate over said channel. For a predefined set of transistors, a corresponding trench is formed between gates of adjacent transistors. For each trench, a defined pattern of nanotube fabric is provided over at least a horizontal portion of the structure and extending into the trench. An electrode is provided in each trench. Each defined pattern of nanotube fabric is suspended so that at least a portion is vertically suspended in spaced relation to the vertical walls of the trench and positioned so that the vertically suspended defined pattern of nanotube fabric is electromechanically deflectable into electrical communication with one of the drain and source of a transistor. An electrical communication path is provided electrically connecting each electrode so that all electrodes may electro-statically attract a corresponding defined pattern of nanotube fabric away from a transistor and toward the electrode.
摘要翻译：一种制造具有由纳米管制成的元件的字节可擦除器件的方法。在本发明的一个方面，制造具有纳米管存储元件的装置。提供了具有多个晶体管的结构，每个具有漏极和源极之间的沟道区域，每个晶体管还包括位于所述沟道上的栅极。对于预定义的一组晶体管，在相邻晶体管的栅极之间形成相应的沟槽。对于每个沟槽，在结构的至少水平部分上提供限定的纳米管织物图案并且延伸到沟槽中。在每个沟槽中设置电极。每个限定的纳米管织物图案被悬挂，使得至少一部分垂直悬挂在与沟槽的垂直壁隔开的关系中，并且定位成使得垂直悬挂的限定图案的纳米管织物可机电偏转成与漏斗之一电连通和晶体管的源极。电气连接路径被电连接每个电极，使得所有电极可以静电吸引相应的限定图案的纳米管织物远离晶体管并朝向电极。

42. 发明申请

US20050237781A1 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same 有权
标题翻译：非易失性机电场效应器件和使用其的电路及其形成方法
公开(公告)号：US20050237781A1
公开(公告)日：2005-10-27
申请号：US10967858
申请日：2004-10-18
申请人： Claude Bertin , Thomas Rueckes , John Berg
发明人： Claude Bertin , Thomas Rueckes , John Berg
IPC分类号： G11C13/02 , G11C16/04
CPC分类号： B82Y10/00 , G11C8/10 , G11C11/412 , G11C11/54 , G11C13/025 , G11C16/0416 , G11C23/00 , H01L27/115 , Y10S977/733
摘要： Non-volatile field effect devices and circuits using same. A non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate have a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically positioned between one of the source, drain and gate and its corresponding terminal. The others of the source, drain and gate are directly connected to their corresponding terminals. The nanotube switching element is electromechanically-deflectable in response to electrical stimulation at two control terminals to create one of a non-volatile open and non-volatile closed electrical communication state between the one of the source, drain and gate and its corresponding terminal. Under one embodiment, one of the two control terminals has a dielectric surface for contact with the nanotube switching element when creating a non-volatile open state. Under one embodiment, the source, drain and gate may be stimulated at any voltage level from ground to supply voltage, and wherein the two control terminals are stimulated at any voltage level from ground to a switching threshold voltage larger in magnitude than the supply voltage. Under one embodiment, the nanotube switching element includes an article made from nanofabric that is positioned between the two control terminals. Under one embodiment, one of the two control terminals is a release electrode for electrostatically pulling the nanotube article out of contact with the one of the source, drain and gate so as to form a non-volatile open state. Under one embodiment, the other of the two control terminals is a set electrode for electrostatically pulling the nanotube article into contact with the one of the source, drain and gate so as to form a non-volatile closed state.
摘要翻译：非易失性场效应器件和使用它的电路。非易失性场效应器件包括在源极和漏极之间具有场可调通道的源极，漏极和栅极。源极，漏极和栅极中的每一个都具有相应的端子。电气可偏转的纳米管开关元件电气地定位在源极，漏极和栅极之一及其对应的端子之间。源极，漏极和栅极中的其他物体直接连接到其相应的端子。纳米管开关元件响应于在两个控制端子处的电刺激而机电可偏转以产生源极，漏极和栅极之一与其相应的端子之间的非易失性开放和非易失性闭合电连通状态之一。在一个实施例中，当创建非易失性打开状态时，两个控制端中的一个具有用于与纳米管开关元件接触的电介质表面。在一个实施例中，源极，漏极和栅极可以在从地面到电源电压的任何电压电平下被激励，并且其中两个控制端子被激励在从接地到比电源电压更大幅度的开关阈值电压的任何电压电平。在一个实施例中，纳米管开关元件包括由纳米制成的制品，其位于两个控制端子之间。在一个实施例中，两个控制端子中的一个是用于静电拉伸纳米管制品的释放电极，与源极，漏极和栅极之一不接触，以形成非易失性的打开状态。在一个实施例中，两个控制端子中的另一个是用于静电拉动纳米管制品与源极，漏极和栅极之一接触的设置电极，以便形成非易失性闭合状态。

43. 发明申请

US20050059210A1 Process for making bit selectable devices having elements made with nanotubes 有权
标题翻译：用于制造具有由纳米管制成的元件的位选择器件的工艺
公开(公告)号：US20050059210A1
公开(公告)日：2005-03-17
申请号：US10824706
申请日：2004-04-15
申请人： Thomas Rueckes , Venkatachalam Jaiprakash , Claude Bertin
发明人： Thomas Rueckes , Venkatachalam Jaiprakash , Claude Bertin
IPC分类号： G11C13/02 , G11C23/00 , H01L27/28 , H01L51/00 , H01L51/30 , H01L21/82 , H01L21/336
CPC分类号： G11C13/025 , B82Y10/00 , G11C23/00 , H01L27/28 , H01L51/0048 , H01L51/0052
摘要： A method is used to make a bit selectable device having nanotube memory elements. A structure having at least two transistors is provided, each with a drain and a source with a defined channel region therebetween, each transistor further including a gate over said channel. A trench is formed between one of the source and drain of a first transistor and one of the source and drain of a second transistor. An electrical communication path is formed in the trench between one of the source and drain of a first transistor and one of the source and drain of a second transistor. A defined pattern of nanotube fabric is provided over at least a horizontal portion of the structure and extending into the trench. An electrode is provided in the trench. A pattern of nanotube fabric is suspended so that at least a portion is vertically suspended in spaced relation to the vertical walls of the trench and positioned so that the vertically suspended defined pattern of nanotube fabric is electromechanically deflectable into electrical communication with one of the drain and source of a first transistor and one of the source and drain of a second transistor.
摘要翻译：一种方法用于制造具有纳米管存储元件的位选择器件。提供了具有至少两个晶体管的结构，每个具有漏极和源极之间具有限定的沟道区域，每个晶体管还包括位于所述沟道上的栅极。在第一晶体管的源极和漏极之一以及第二晶体管的源极和漏极之一之间形成沟槽。在第一晶体管的源极和漏极之一以及第二晶体管的源极和漏极中的一个之间的沟槽中形成电连通路径。在结构的至少一个水平部分上提供限定的纳米管织物图案并且延伸到沟槽中。在沟槽中设置电极。纳米管织物的图案被悬浮，使得至少一部分垂直悬挂在与沟槽的垂直壁隔开的位置上，并且被定位成使得垂直悬挂的限定图案的纳米管织物可机电偏转成与排水管之一电连通第一晶体管的源极和第二晶体管的源极和漏极之一。

44. 发明申请

US20060255834A1 TRI-STATE CIRCUIT USING NANOTUBE SWITCHING ELEMENTS 失效
标题翻译：使用纳米开关元件的三态电路
公开(公告)号：US20060255834A1
公开(公告)日：2006-11-16
申请号：US11032823
申请日：2005-01-10
申请人： Claude Bertin
发明人： Claude Bertin
IPC分类号： H03K19/02
CPC分类号： G11C11/56 , B82Y10/00 , G11C13/025 , G11C23/00 , H01H1/0094 , Y10S977/932 , Y10S977/936 , Y10S977/94
摘要： Nanotube-based logic circuitry is disclosed. Tri-stating elements add an enable/disable function to the circuitry. The tri-stating elements may be provided by nanotube-based switching devices. In the disabled state, the outputs present a high impedance, i.e., are tri-stated, which state allows interconnection to a common bus or other shared communication lines. In embodiments wherein the components are non-volatile, the inverter state and the control state are maintained in the absence of power. Such an inverter may be used in conjunction with and in the absence of diodes, resistors and transistors or as part of or as a replacement to CMOS, biCMOS, bipolar and other transistor level technologies.
摘要翻译：公开了基于纳米管的逻辑电路。三态元件为电路添加一个启用/禁用功能。三态元件可以由基于纳米管的开关装置提供。在禁用状态下，输出呈现高阻抗，即三态，哪种状态允许与公共总线或其他共享通信线路的互连。在其中组件是非易失性的实施例中，在没有电力的情况下维持逆变器状态和控制状态。这种反相器可以与二极管，电阻器和晶体管结合使用，也可以用于CMOS，biCMOS，双极晶体管和其他晶体管级技术的一部分或替代。

45. 发明申请

US20050279988A1 Nanotube-based transfer devices and related circuits 失效
标题翻译：基于纳米管的转移装置及相关电路
公开(公告)号：US20050279988A1
公开(公告)日：2005-12-22
申请号：US11033087
申请日：2005-01-10
申请人： Claude Bertin
发明人： Claude Bertin
IPC分类号： G11C13/02 , H01H59/00 , H01L27/14 , H01L27/20 , H01L29/06 , H01L51/00 , H01L51/05 , H01L51/30
CPC分类号： B82Y10/00 , G11C13/025 , H01L51/0048 , H01L51/0052 , H01L51/0545
摘要： Nanotube transfer devices controllably form a nanotube-based electrically conductive channel between a first node and a second node under the control of a control structure. A control structure induces a nanotube channel element to deflect so as to form and unform the conductive channel between the nodes. The nanotube channel element is not in permanent electrical contact with either the first node or the second node. The nanotube channel element may have a floating potential in certain states of the device. Each output node may be connected to an arbitrary network of electrical components. The nanotube transfer device may be volatile or non-volatile. In preferred embodiments, the nanotube transfer device is a three-terminal device or a four-terminal device. Electrical circuits are provided that ensure proper switching of nanotube transfer devices interconnected with arbitrary circuits. The circuits may overdrive the control structure to induce the desired state of channel formation.
摘要翻译：纳米管转移装置在控制结构的控制下可控制地在第一节点和第二节点之间形成基于纳米管的导电通道。控制结构诱导纳米管通道元件偏转以便形成和取消在节点之间的导电通道。纳米管通道元件不与第一节点或第二节点永久电接触。纳米管通道元件可能在器件的某些状态下具有浮动电位。每个输出节点可以连接到电气部件的任意网络。纳米管转移装置可以是挥发性的或非挥发性的。在优选实施例中，纳米管转移装置是三端装置或四端装置。提供了确保与任意电路互连的纳米管转移装置的适当切换的电路。电路可能过度驱动控制结构以引起期望的通道形成状态。

46. 发明申请

US20080012047A1 Two-terminal nanotube devices and systems and methods of making same 有权
标题翻译：两端纳米管装置及其制造方法
公开(公告)号：US20080012047A1
公开(公告)日：2008-01-17
申请号：US11280786
申请日：2005-11-15
申请人： Claude Bertin , Mitchell Meinhold , Steven Konsek , Thomas Ruckes , Max Strasburg , Frank Guo , X. M. Huang , Ramesh Sivarajan
发明人： Claude Bertin , Mitchell Meinhold , Steven Konsek , Thomas Ruckes , Max Strasburg , Frank Guo , X. M. Huang , Ramesh Sivarajan
IPC分类号： H01L29/76 , H01L29/745
CPC分类号： H01L27/112 , B82Y10/00 , G11C13/0002 , G11C13/025 , G11C17/16 , G11C17/165 , G11C2213/19 , G11C2213/77 , G11C2213/79 , H01L27/1052 , Y10S977/943
摘要： A two terminal switching device includes first and second conductive terminals and a nanotube article. The article has at least one nanotube, and overlaps at least a portion of each of the first and second terminals. The device also includes a stimulus circuit in electrical communication with at least one of the first and second terminals. The circuit is capable of applying first and second electrical stimuli to at least one of the first and second terminal(s) to change the relative resistance of the device between the first and second terminals between a relatively high resistance and a relatively low resistance. The relatively high resistance between the first and second terminals corresponds to a first state of the device, and the relatively low resistance between the first and second terminals corresponds to a second state of the device.
摘要翻译：二端开关器件包括第一和第二导电端子和纳米管制品。该制品具有至少一个纳米管，并且与第一和第二端子中的每一个的至少一部分重叠。该装置还包括与第一和第二端子中的至少一个电连通的激励电路。电路能够将第一和第二电刺激施加到第一和第二端子中的至少一个，以在相对较高电阻和相对较低电阻之间改变第一和第二端子之间的器件的相对电阻。第一和第二端子之间的相对高的电阻对应于器件的第一状态，并且第一和第二端子之间的相对较低的电阻对应于器件的第二状态。

47. 发明申请

US20070210825A1 TRI-STATE CIRCUIT USING NANOTUBE SWITCHING ELEMENTS 有权
标题翻译：使用纳米开关元件的三态电路
公开(公告)号：US20070210825A1
公开(公告)日：2007-09-13
申请号：US11656253
申请日：2007-01-22
申请人： Claude Bertin
发明人： Claude Bertin
IPC分类号： H03K19/195
CPC分类号： G11C11/56 , B82Y10/00 , G11C13/025 , G11C23/00 , H01H1/0094 , Y10S977/932 , Y10S977/936 , Y10S977/94
摘要： Nanotube-based logic circuitry is disclosed. Tri-stating elements add an enable/disable function to the circuitry. The tri-stating elements may be provided by nanotube-based switching devices. In the disabled state, the outputs present a high impedance, i.e., are tri-stated, which state allows interconnection to a common bus or other shared communication lines. In embodiments wherein the components are non-volatile, the inverter state and the control state are maintained in the absence of power. Such an inverter may be used in conjunction with and in the absence of diodes, resistors and transistors or as part of or as a replacement to CMOS, biCMOS, bipolar and other transistor level technologies.
摘要翻译：公开了基于纳米管的逻辑电路。三态元件为电路添加一个启用/禁用功能。三态元件可以由基于纳米管的开关装置提供。在禁用状态下，输出呈现高阻抗，即三态，哪种状态允许与公共总线或其他共享通信线路的互连。在其中组件是非易失性的实施例中，在没有电力的情况下维持逆变器状态和控制状态。这种反相器可以与二极管，电阻器和晶体管结合使用，也可以用于CMOS，biCMOS，双极晶体管和其他晶体管级技术的一部分或替代。

48. 发明申请

US20070115027A1 Nanotube-based logic driver circuits 有权
公开(公告)号：US20070115027A1
公开(公告)日：2007-05-24
申请号：US11653673
申请日：2007-01-16
申请人： Claude Bertin
发明人： Claude Bertin
IPC分类号： H03K19/003
CPC分类号： G11C13/025 , B82Y10/00 , G11C23/00 , G11C2213/16 , H03K19/02
摘要： Nanotube based logic driver circuits. These include pull-up driver circuits, push-pull driver circuits, tristate driver circuits, among others. Under one embodiment, an off-chip driver circuit includes a differential input having first and second signal links, each coupled to a respective one of two differential, on-chip signals. At least one output link is connectable to an off-chip impedance load, and at least one switching element has an input node, an output node, a nanotube channel element, and a control structure disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. The input node is coupled to a reference signal and the control structure is coupled to the first and second signal links. The output node is coupled to the output link, and the channel element is sized to carry sufficient current to drive said off-chip impedance load.

49. 发明申请

US20070001708A1 CARRIER FOR TEST, BURN-IN, AND FIRST LEVEL PACKAGING 失效
标题翻译：承运人进行测试，打入和第一级包装
公开(公告)号：US20070001708A1
公开(公告)日：2007-01-04
申请号：US11531140
申请日：2006-09-12
申请人： Claude Bertin , Wayne Ellis , Mark Kellogg , William Tonti , Jerzy Zalesinski , James Leas , Wayne Howell
发明人： Claude Bertin , Wayne Ellis , Mark Kellogg , William Tonti , Jerzy Zalesinski , James Leas , Wayne Howell
IPC分类号： G01R31/26
CPC分类号： G01R31/2867 , G11C5/04 , G11C29/06 , G11C29/1201 , G11C29/48 , G11C29/56016 , G11C29/785 , G11C2029/2602 , G11C2029/5602 , H01L22/22 , H01L22/32 , H01L2924/0002 , H01L2924/00
摘要： A plurality of semiconductor devices are provided on a carrier for testing or burning-in. The carrier is then cut up to provide single chip-on-carrier components or multi-chip-on-carrier components. The carrier is used as a first level package for each chip. Thus, the carrier serves a dual purpose for test and burn-in and for packaging. A lead reduction mechanism, such as a built-in self-test engine, can be provided on each chip or on the carrier and is connected to contacts of the carrier for the testing and burn-in steps. The final package after cutting includes at least one known good die and may include an array of chips on the carrier, such as a SIMM or a DIMM. The final package can also be a stack of chips each mounted on a separate carrier. The carriers of the stack are connected to each other through a substrate mounted along a side face of the stack that is electrically connected to a line of pads along an edge of each carrier.
摘要翻译：在载体上提供多个半导体器件用于测试或烧录。然后将载体切割以提供单个芯片上载波部件或多芯片载波部件。载体用作每个芯片的第一级封装。因此，载体用于测试和烧录和包装的双重目的。可以在每个芯片或载体上提供诸如内置自检引擎的引线减少机构，并且连接到载体的触点用于测试和老化步骤。切割后的最终包装包括至少一个已知的良好的模具，并且可以包括载体上的芯片阵列，例如SIMM或DIMM。最终的包装也可以是一堆芯片，每个芯片都安装在单独的载体上。堆叠的载体通过沿着堆叠的侧面安装的基板彼此连接，该基板沿着每个载体的边缘电连接到焊盘一排。

50. 发明申请

US20050282516A1 Receiver circuit using nanotube-based switches and logic 有权
标题翻译：接收器电路采用基于纳米管的开关和逻辑
公开(公告)号：US20050282516A1
公开(公告)日：2005-12-22
申请号：US11033215
申请日：2005-01-10
申请人： Claude Bertin
发明人： Claude Bertin
IPC分类号： G11C13/02 , H04B1/16
CPC分类号： G11C13/025 , B82Y10/00 , G11C2213/17 , Y10S977/936 , Y10S977/938 , Y10S977/94
摘要： Receiver circuits using nanotube based switches and logic. Preferably, the circuits are dual-rail (differential). A receiver circuit includes a differential input having a first and second input link, and a differential output having a first and second output link. First, second, third and fourth switching elements each have an input node, an output node, a nanotube channel element, and a control structure disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. The receiver circuit can sense small voltage inputs and convert them to larger voltage swings.
摘要翻译：使用基于纳米管的开关和逻辑的接收器电路。优选地，电路是双轨（差分）。接收器电路包括具有第一和第二输入链路的差分输入和具有第一和第二输出链路的差分输出。第一，第二，第三和第四开关元件各自具有相对于纳米管通道元件设置的输入节点，输出节点，纳米管通道元件和控制结构，以可控地形成和取消所述输入节点和所述输出节点。接收器电路可以感测小电压输入并将其转换为更大的电压摆幅。

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