专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US08390089B2 Image sensor with deep trench isolation structure 有权
标题翻译：具有深沟槽隔离结构的图像传感器
公开(公告)号：US08390089B2
公开(公告)日：2013-03-05
申请号：US12844642
申请日：2010-07-27
申请人： Szu-Ying Chen , Chun-Chieh Chuang , Jen-Cheng Liu , Dun-Nian Yaung
发明人： Szu-Ying Chen , Chun-Chieh Chuang , Jen-Cheng Liu , Dun-Nian Yaung
IPC分类号： H01L21/00
CPC分类号： H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： Provided is a back side illuminated image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the front side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a deep trench isolation feature that is disposed adjacent to the radiation-detection device. The image sensor device further includes a doped layer that at least partially surrounds the deep trench isolation feature in a conformal manner.
摘要翻译：提供了背面照明图像传感器装置。图像传感器装置包括具有与前侧相对的前侧和后侧的基板。图像传感器还包括形成在基板中的放射线检测装置。放射线检测装置可操作以检测通过背面进入衬底的辐射波。图像传感器还包括与辐射检测装置相邻设置的深沟槽隔离特征。图像传感器装置还包括以保形方式至少部分地围绕深沟槽隔离特征的掺杂层。

42. 发明申请

US20120273914A1 Image Sensor and Method of Fabricating Same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US20120273914A1
公开(公告)日：2012-11-01
申请号：US13545450
申请日：2012-07-10
申请人： Wen-De Wang , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Jeng-Shyan Lin
发明人： Wen-De Wang , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Jeng-Shyan Lin
IPC分类号： H01L31/02
CPC分类号： H01L27/14685 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L27/1464
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a device substrate having a front side and a back side. The method includes forming first and second radiation-sensing regions in the device substrate, the first and second radiation-sensing regions being separated by an isolation structure. The method also includes forming a transparent layer over the back side of the device substrate. The method further includes forming an opening in the transparent layer, the opening being aligned with the isolation structure. The method also includes filling the opening with an opaque material.
摘要翻译：提供了一种制造图像传感器装置的方法。该方法包括提供具有前侧和后侧的装置基板。该方法包括在器件衬底中形成第一和第二辐射感测区域，第一和第二辐射感测区域由隔离结构隔开。该方法还包括在器件衬底的背面上形成透明层。该方法还包括在透明层中形成开口，该开口与隔离结构对准。该方法还包括用不透明材料填充开口。

43. 发明申请

US20110260280A1 Back Side Defect Reduction For Back Side Illuminated Image Sensor 有权
标题翻译：背面照明图像传感器的背面缺陷减少
公开(公告)号：US20110260280A1
公开(公告)日：2011-10-27
申请号：US12766149
申请日：2010-04-23
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Yeur-Luen Tu , Jen-Cheng Liu , Keng-Yu Chou , Chung Chien Wang
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Yeur-Luen Tu , Jen-Cheng Liu , Keng-Yu Chou , Chung Chien Wang
IPC分类号： H01L31/102 , H01L31/18 , H01L31/0352
CPC分类号： H01L31/1872 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14689
摘要： Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a recrystallized silicon layer. The recrystalized silicon layer is formed on the back side of the substrate. The recrystalized silicon layer has different photoluminescence intensity than the substrate.
摘要翻译：提供了一种图像传感器装置。图像传感器装置包括具有正面和背面的基板。图像传感器还包括形成在基板中的放射线检测装置。放射线检测装置可操作以检测通过背面进入衬底的辐射波。图像传感器还包括再结晶硅层。重结晶的硅层形成在基板的背面。重结晶的硅层的光致发光强度不同于衬底。

44. 发明申请

US20100233871A1 METHOD FOR GENERATING TWO DIMENSIONS FOR DIFFERENT IMPLANT ENERGIES 有权
标题翻译：用于生成不同植被能量的两维尺度的方法
公开(公告)号：US20100233871A1
公开(公告)日：2010-09-16
申请号：US12404852
申请日：2009-03-16
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Jeng-Shyan Lin , Wen-De Wang
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Jeng-Shyan Lin , Wen-De Wang
IPC分类号： H01L21/266
CPC分类号： H01L21/266 , H01L21/26513 , H01L29/66537
摘要： A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a first hard mask layer over the substrate; patterning the first hard mask layer to form one or more first openings having a first critical dimension; performing a first implantation process on the substrate; forming a second hard mask layer over the first hard mask layer to form one or more second openings having a second critical dimension; and performing a second implantation process.
摘要翻译：公开了一种用于制造集成电路器件的方法。该方法包括提供基板; 在衬底上形成第一硬掩模层; 图案化第一硬掩模层以形成具有第一临界尺寸的一个或多个第一开口; 在所述基板上执行第一注入工艺; 在所述第一硬掩模层上形成第二硬掩模层以形成具有第二临界尺寸的一个或多个第二开口; 以及执行第二植入过程。

45. 发明授权

US08569807B2 Backside illuminated image sensor having capacitor on pixel region 有权
标题翻译：在像素区域上具有电容器的背面照明图像传感器
公开(公告)号：US08569807B2
公开(公告)日：2013-10-29
申请号：US12820656
申请日：2010-06-22
申请人： Chun-Chieh Chuang , Dun-Nian Yuang , Jen-Cheng Liu , Jeng-Shyan Lin , Wen-De Wang
发明人： Chun-Chieh Chuang , Dun-Nian Yuang , Jen-Cheng Liu , Jeng-Shyan Lin , Wen-De Wang
IPC分类号： H01L27/148 , H01L31/00
CPC分类号： H01L27/1461 , H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L28/40
摘要： A backside illuminated image sensor includes a semiconductor substrate having a front side and backside, a sensor element formed overlying the frontside of the semiconductor substrate, and a capacitor formed overlying the sensor element.
摘要翻译：背面照明图像传感器包括具有前侧和后侧的半导体衬底，形成在半导体衬底的前侧上的传感器元件和形成在传感器元件上的电容器。

46. 发明授权

US07927301B2 Safety syringe 有权
标题翻译：安全注射器
公开(公告)号：US07927301B2
公开(公告)日：2011-04-19
申请号：US12418556
申请日：2009-04-03
申请人： Hsi-Hsun Tseng , Chih-Ming Wang , Po-Liang Lee , Chun-Chieh Chuang
发明人： Hsi-Hsun Tseng , Chih-Ming Wang , Po-Liang Lee , Chun-Chieh Chuang
IPC分类号： A61M5/00
CPC分类号： A61M5/3234 , A61M2005/323 , A61M2005/3241 , A61M2005/3242
摘要： A safety syringe includes an outer barrel, a needle unit, an outer barrel plug, an inner barrel, an inner barrel plug, a needle clamper, and a vacuum generating device. The needle unit is disposed within the front end of the outer barrel. The outer barrel plug is disposed within the outer barrel; the outer barrel plug is connected with the needle unit so as to fix the needle unit. The inner barrel plug is disposed within the front end of the inner barrel. The needle clamper is connected with the inner barrel plug. The needle clamper is able to clamp a rear opening of the needle unit. The vacuum generating device is disposed within the inner barrel, and the needle unit can be retracted into the inner barrel by the low pressure which is generated by the vacuum generating device.
摘要翻译：安全注射器包括外筒，针单元，外筒塞，内筒，内筒塞，针夹持器和真空产生装置。针单元设置在外筒的前端内。外桶塞设置在外筒内; 外筒塞与针单元连接，以固定针单元。内筒塞设置在内筒的前端内。针夹持器与内筒塞连接。针夹具能够夹紧针单元的后开口。真空发生装置设置在内筒内，并且针单元可以通过由真空发生装置产生的低压缩回到内筒中。

47. 发明申请

US20100142425A1 TRANSMISSION POWER CONTROL METHOD AND SYSTEM 有权
标题翻译：传动功率控制方法与系统
公开(公告)号：US20100142425A1
公开(公告)日：2010-06-10
申请号：US12411857
申请日：2009-03-26
申请人： JIN-SHYAN LEE , Chun-Chieh Chuang
发明人： JIN-SHYAN LEE , Chun-Chieh Chuang
IPC分类号： G08C17/00
CPC分类号： H04W52/146 , H04W52/322 , H04W52/36 , H04W52/54
摘要： A transmitting power level control method and system are provided, whereby the power of a terminal device in a wireless sensor network is saved and the lifetime thereof is extended. The control method includes the steps of: (A) broadcasting a plurality of transmitting power level (TPL) messages, each of which represents a respective TPL and the respective TPLs are different from one another, wherein each of the plurality of TPL messages is broadcasted at the respective TPL thereof; and (B) setting a TPL for the terminal device at a minimum one of the TPLs represented by the TPL messages received by the terminal device.
摘要翻译：提供了一种发送功率电平控制方法和系统，由此节省了无线传感器网络中的终端设备的功率并延长了其寿命。所述控制方法包括以下步骤：（A）广播多个发送功率电平（TPL）消息，每个发送功率电平（TPL）消息各自表示相应的TPL，并且各个TPL彼此不同，其中广播多个TPL消息中的每一个在其相应的TPL; 和（B）在由终端设备接收的TPL消息表示的TPL中的至少一个TPL下为终端设备设置TPL。

48. 发明授权

US07459371B2 Method for non-volatile memory fabrication 有权
标题翻译：非易失性存储器制造方法
公开(公告)号：US07459371B2
公开(公告)日：2008-12-02
申请号：US11293279
申请日：2005-12-05
申请人： Tseung-Yuen Tseng , Chih-Yi Liu , Chun-Chieh Chuang
发明人： Tseung-Yuen Tseng , Chih-Yi Liu , Chun-Chieh Chuang
IPC分类号： H01L21/20 , H01L21/8242
CPC分类号： H01L21/02197 , H01L21/02164 , H01L21/31691 , H01L27/101 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1608
摘要： A method for non-volatile memory fabrication is provided, in which a substrate is provided, a bottom electrode is formed on the substrate, a solution with precursors of Zr and Sr is coated on the bottom electrode, the solution on the bottom electrode surface is dried and then fired to form a resistor layer of SrZrO3, and a top electrode is formed on the resistor layer.
摘要翻译：提供一种用于非易失性存储器制造的方法，其中提供衬底，在衬底上形成底部电极，在底部电极上涂覆具有Zr和Sr前体的溶液，底部电极表面上的溶液为干燥后烧成SrZrO3的电阻层，在电阻层上形成顶部电极。

49. 发明授权

US08218475B2 Transmission power control method and system 有权
标题翻译：传输功率控制方法及系统
公开(公告)号：US08218475B2
公开(公告)日：2012-07-10
申请号：US12411857
申请日：2009-03-26
申请人： Jin-Shyan Lee , Chun-Chieh Chuang
发明人： Jin-Shyan Lee , Chun-Chieh Chuang
IPC分类号： H04B7/185 , H04B7/00 , H04W4/00
CPC分类号： H04W52/146 , H04W52/322 , H04W52/36 , H04W52/54
摘要： A transmitting power level control method and system are provided, whereby the power of a terminal device in a wireless sensor network is saved and the lifetime thereof is extended. The control method includes the steps of: (A) broadcasting a plurality of transmitting power level (TPL) messages, each of which represents a respective TPL and the respective TPLs are different from one another, wherein each of the plurality of TPL messages is broadcasted at the respective TPL thereof; and (B) setting a TPL for the terminal device at a minimum one of the TPLs represented by the TPL messages received by the terminal device.
摘要翻译：提供了一种发送功率电平控制方法和系统，由此节省了无线传感器网络中的终端设备的功率并延长了其寿命。所述控制方法包括以下步骤：（A）广播多个发送功率电平（TPL）消息，每个发送功率电平（TPL）消息各自表示相应的TPL，并且各个TPL彼此不同，其中广播多个TPL消息中的每一个在其相应的TPL; 和（B）在由终端设备接收的TPL消息表示的TPL中的至少一个TPL下为终端设备设置TPL。

50. 发明申请

US20060286762A1 Method for non-volatile memory fabrication 有权
标题翻译：非易失性存储器制造方法
公开(公告)号：US20060286762A1
公开(公告)日：2006-12-21
申请号：US11293279
申请日：2005-12-05
申请人： Tseung-Yuen Tseng , Chih-Yi Liu , Chun-Chieh Chuang
发明人： Tseung-Yuen Tseng , Chih-Yi Liu , Chun-Chieh Chuang
IPC分类号： H01L21/20
CPC分类号： H01L21/02197 , H01L21/02164 , H01L21/31691 , H01L27/101 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1608
摘要： A method for non-volatile memory fabrication is provided, in which a substrate is provided, a bottom electrode is formed on the substrate, a solution with precursors of Zr and Sr is coated on the bottom electrode, the solution on the bottom electrode surface is dried and then fired to form a resistor layer of SrZrO3, and a top electrode is formed on the resistor layer.
摘要翻译：提供一种用于非易失性存储器制造的方法，其中提供衬底，在衬底上形成底部电极，在底部电极上涂覆具有Zr和Sr前体的溶液，底部电极表面上的溶液为干燥，然后烧制以形成SrZrO 3 3的电阻层，并且在电阻层上形成顶部电极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式