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    • 41. 发明申请
    • System for displaying image and driving method for organic light-emitting element
    • 用于显示有机发光元件的图像和驱动方法的系统
    • US20080042941A1
    • 2008-02-21
    • US11889553
    • 2007-08-14
    • Du-Zen PengShih-Chang Chang
    • Du-Zen PengShih-Chang Chang
    • G09G3/30
    • G09G3/3233G09G2300/0842G09G2300/0861G09G2320/0233G09G2320/043
    • A system for displaying an image includes a plurality of pixel structures. Each pixel structure includes an organic light-emitting element and a pixel driving circuit, which drives the organic light-emitting element and is electrically connected with a first scan line and a data line. The pixel driving circuit includes a drive element, a storage capacitor, a select switch and a data switch. The drive element outputs a current to the organic light-emitting element. The storage capacitor has a first terminal and a second terminal respectively electrically connected with two terminals of the drive element to control the current outputted from the drive element. The select switch is electrically connected with the first scan line to connect/disconnect the data line and the first terminal of the storage capacitor. The data switch is electrically connected with the first scan line to connect/disconnect a second scan line and the second terminal of the storage capacitor.
    • 用于显示图像的系统包括多个像素结构。 每个像素结构包括驱动有机发光元件并与第一扫描线和数据线电连接的有机发光元件和像素驱动电路。 像素驱动电路包括驱动元件,存储电容器,选择开关和数据开关。 驱动元件向有机发光元件输出电流。 存储电容器具有分别与驱动元件的两个端子电连接的第一端子和第二端子,以控制从驱动元件输出的电流。 选择开关与第一扫描线电连接以连接/断开数据线和存储电容器的第一端子。 数据开关与第一扫描线电连接以连接/断开第二扫描线和存储电容器的第二端。
    • 43. 发明授权
    • Method for forming thin film transistor with lateral crystallization
    • 用横向结晶形成薄膜晶体管的方法
    • US06426246B1
    • 2002-07-30
    • US09789347
    • 2001-02-21
    • Ting-Chang ChangDu-Zen PengChun-Yen Chang
    • Ting-Chang ChangDu-Zen PengChun-Yen Chang
    • H01L2100
    • H01L29/66757H01L29/78675
    • A method for forming thin film transistor with lateral crystallization. The method at least includes the following steps. First of all, an insulation substrate is provided. Then, an amorphous silicon layer is provided on the insulation substrate. The seeds are formed by annealing a portion of the amorphous silicon layer by excimer laser system, and the lateral-growth grain is formed by using the seeds to grow laterally by annealing the amorphous silicon layer, wherein the amorphous silicon layer defines an active region. Then, sequentially a dielectric layer and a polysilicon layer is deposited on the active region, wherein the dielectric layer and the polysilicon layer are gate electrodes, a gate is defined on the substrate, and the polysilicon layer is formed by etching. Next, source and drain regions are formed by implanting numerous ions into amorphous silicon layer by using the gate electrode as a mask.
    • 一种用于形成具有横向结晶的薄膜晶体管的方法。 该方法至少包括以下步骤。 首先,提供绝缘基板。 然后,在绝缘基板上设置非晶硅层。 通过准分子激光系统对非晶硅层的一部分进行退火而形成种子,并且通过使晶种通过使非晶硅层退火而横向生长而形成横向生长晶粒,其中非晶硅层限定有源区。 然后,依次在有源区上沉积介质层和多晶硅层,其中介质层和多晶硅层是栅电极,在衬底上限定栅极,并且通过蚀刻形成多晶硅层。 接下来,通过使用栅电极作为掩模,通过将许多离子注入非晶硅层来形成源区和漏区。
    • 44. 发明授权
    • Method of manufacturing aluminum gate electrode
    • 铝栅极电极的制造方法
    • US6110768A
    • 2000-08-29
    • US262234
    • 1999-03-04
    • Ting-Chang ChangDu-Zen PengPo-Sheng Shih
    • Ting-Chang ChangDu-Zen PengPo-Sheng Shih
    • H01L21/28H01L21/336H01L21/00
    • H01L29/66765H01L21/28008
    • A method of manufacturing a method of manufacturing a thin film transistor. An aluminum gate electrode is formed on a substrate. A protective layer is formed on the top surface and the sidewall of the aluminum gate electrode. A gate dielectric layer is formed on the substrate and the protective layer. An intrinsic amorphous-silicon thin film is formed on the gate dielectric layer. A heavily doped amorphous-silicon thin film is formed on the intrinsic amorphous-silicon thin film. A patterned source/drain conductive layer is formed on the heavily doped amorphous-silicon thin film to expose a portion of the heavily doped amorphous-silicon thin film. The portion of the heavily doped amorphous-silicon thin film exposed by the patterned source/drain conductive layer is removed to expose a portion of the intrinsic amorphous-silicon thin film.
    • 一种制造薄膜晶体管的方法的方法。 在基板上形成铝栅电极。 在铝栅电极的顶表面和侧壁上形成保护层。 栅介质层形成在衬底和保护层上。 在栅介质层上形成本征非晶硅薄膜。 在本征非晶硅薄膜上形成重掺杂的非晶硅薄膜。 在重掺杂的非晶硅薄膜上形成图案化的源极/漏极导电层,以暴露部分重掺杂的非晶硅薄膜。 去除由图案化的源极/漏极导电层暴露的重掺杂非晶硅薄膜的部分,以暴露本征非晶硅薄膜的一部分。
    • 46. 发明授权
    • Reflective liquid crystal display device integrated with organic light-emitting device
    • 与有机发光装置集成的反射型液晶显示装置
    • US08300173B2
    • 2012-10-30
    • US12783613
    • 2010-05-20
    • Du-Zen PengRyuji Nishikawa
    • Du-Zen PengRyuji Nishikawa
    • G02F1/1335
    • G02F1/1336G02F1/133553G02F1/133603G02F2001/133616
    • A system for displaying images is provided. The system includes a reflective liquid crystal display device including a first substrate having a pixel unit array thereon. A second substrate is disposed above the first substrate and a liquid crystal layer is disposed therebetween. A plurality of first electrodes is disposed between the second substrate and the liquid crystal layer and corresponds to each pixel unit including a reflective electrode. A second electrode is disposed between the plurality of first electrodes and the liquid crystal layer to serve as a common electrode that controls the liquid crystal layer. An organic light-emissive layer is disposed between the plurality of first electrodes and the second electrode. A light-emitting device is constituted by the plurality of first electrodes, the second electrode, and the organic light-emissive layer to provide light onto the reflective electrode.
    • 提供了一种用于显示图像的系统。 该系统包括反射型液晶显示装置,其包括在其上具有像素单元阵列的第一基板。 第二基板设置在第一基板的上方,液晶层位于其间。 多个第一电极设置在第二基板和液晶层之间,并且对应于包括反射电极的每个像素单元。 第二电极设置在多个第一电极和液晶层之间,用作控制液晶层的公共电极。 有机发光层设置在多个第一电极和第二电极之间。 发光装置由多个第一电极,第二电极和有机发光层构成,以在反射电极上提供光。
    • 50. 发明申请
    • SELF-EMISSION TYPE DISPLAY DEVICE WITH HEAT SINK
    • 具有散热的自发式显示装置
    • US20100302231A1
    • 2010-12-02
    • US12783625
    • 2010-05-20
    • Du-Zen PengRyuji Nishikawa
    • Du-Zen PengRyuji Nishikawa
    • G06F3/038G09G3/32
    • G06F3/0481G09G3/3208G09G2320/041
    • A system for displaying images is provided. The system includes a self-emission type display device including an organic light-emitting device interposed between a first substrate and a second substrate, a driving chip, and a thermal conductive layer. The first substrate has a pixel region and a peripheral circuit region. The second substrate is disposed above the first substrate and located at the pixel region. The driving chip is disposed on the first substrate and located at the peripheral circuit region, having a temperature sensor to detect the temperature of the organic light-emitting device. The thermal conductive layer is disposed on the bottom surface of the first substrate that corresponds to the organic light-emitting device and the driving chip.
    • 提供了一种用于显示图像的系统。 该系统包括自发射型显示装置,其包括介于第一基板和第二基板之间的有机发光装置,驱动芯片和导热层。 第一基板具有像素区域和外围电路区域。 第二基板设置在第一基板上方并位于像素区域。 驱动芯片设置在第一基板上并且位于外围电路区域,具有用于检测有机发光器件的温度的温度传感器。 导热层设置在与有机发光装置和驱动芯片对应的第一基板的底面上。