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    • 44. 发明授权
    • Method for designing and making photolithographic reticle, reticle, and photolithographic process
    • 光刻掩模版,光罩和光刻工艺的设计和制造方法
    • US06465138B1
    • 2002-10-15
    • US09377076
    • 1999-08-19
    • William Stanton
    • William Stanton
    • G03F900
    • G03F1/32
    • There are provided methods for making a reticle for use in a photolithography process, comprising forming at least two printable features on a reticle substrate, and forming at least one sub-resolution connecting structure on the reticle substrate, the sub-resolution connecting structure connecting at least two of the printable reticle features, as well as reticles formed according to such methods. In addition, there are provided computer-implemented methods for designing such a reticle, as well as computer readable storage media, computer systems and computer programs for use in making such reticles. In addition, there are provided photolithographic processes using such a reticle. The reticle may be a binary mask, a phase shift mask, or an attenuated phase shift mask.
    • 提供了用于制造用于光刻工艺中的掩模版的方法,包括在掩模版基板上形成至少两个可印刷的特征,并在掩模版基板上形成至少一个分辨率连接结构, 至少两个可印刷的掩模版特征,以及根据这种方法形成的掩模版。 此外,提供了用于设计这种掩模版的计算机实现的方法,以及用于制作这种掩模版的计算机可读存储介质,计算机系统和计算机程序。 此外,提供了使用这种掩模版的光刻工艺。 掩模版可以是二进制掩模,相移掩模或衰减相移掩模。
    • 45. 发明授权
    • Mask design utilizing dummy features
    • 使用虚拟功能的面具设计
    • US06258489B1
    • 2001-07-10
    • US09349983
    • 1999-07-09
    • William StantonVishnu K. Agarwal
    • William StantonVishnu K. Agarwal
    • G03F900
    • G03F1/36
    • A photolithography mask includes dummy features adjacent to features to be printed (printable features). The dummy features are smaller than the resolution (which is approximately equal to the critical dimension) of the photolithography system so that the resist is not fully developed in the areas of the dummy features. Thus, the dummy features will not be etched into the surface below. However, the proximity effects caused by the dummy features will act to suppress sidelobes and/or increase the depth of focus. Dummy features may be provided adjacent to both isolated and densely-packed printable features, thereby equalizing the proximity effects acting on both types features so that isolated printable features will print approximately the same as densely-packed printable features and the printability of both isolated and closely-packed features will be enhanced. The size and shape of the dummy features may be adjusted for the particular application.
    • 光刻掩模包括与要打印的特征相邻的虚拟特征(可打印特征)。 虚拟特征小于光刻系统的分辨率(其大致等于临界尺寸),使得抗蚀剂在虚拟特征的区域中未完全显影。 因此,虚拟特征将不会被蚀刻到下面的表面中。 然而,由虚拟特征引起的邻近效应将起到抑制旁瓣和/或增加焦点深度的作用。 可以在隔离和密集打印的特征附近提供虚拟特征,从而平衡作用在两种类型特征上的邻近效应,使得可隔离的可打印特征将打印出与密集打印的可印刷特征大致相同的印刷特性和两者的印刷性 包装功能将得到增强。 虚拟特征的尺寸和形状可以针对特定应用进行调整。