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41. 发明授权

US5748434A Shield for an electrostatic chuck 失效
标题翻译：屏蔽静电卡盘
公开(公告)号：US5748434A
公开(公告)日：1998-05-05
申请号：US663886
申请日：1996-06-14
申请人： Kent Rossman , Brian Lue , Fred C. Redeker
发明人： Kent Rossman , Brian Lue , Fred C. Redeker
IPC分类号： B23Q3/15 , H01L21/683 , H02N13/00
CPC分类号： H02N13/00 , H01L21/6831 , H01L21/6833
摘要： A shield (5) for an electrostatic chuck (4) includes a first shield member (60) circumscribing the chuck and a second shield member (62) supported over the first shield member. The second shield member has an upper surface surrounding the wafer and exposed to deposition from gases within the process chamber. Splitting the shield into two members increases the ratio of exposed surface to thermal mass of the second shield member, which increases the temperature of the second shield member during processing, thereby decreasing the rate of deposition thereon. In addition, the clean rate or deposition removal rate of the shield is typically a function of its temperature (i.e., the hotter the shield becomes during processing, the faster it can be cleaned). Therefore, the clean rate of the second shield member will be increased, thereby enhancing the throughput of the process.
摘要翻译：用于静电卡盘（4）的屏蔽（5）包括围绕卡盘的第一屏蔽构件（60）和支撑在第一屏蔽构件上的第二屏蔽构件（62）。第二屏蔽构件具有围绕晶片的上表面并暴露于处理室内的气体沉积。将屏蔽分成两个部件增加了第二屏蔽部件的暴露表面与热质量的比例，这在加工期间增加了第二屏蔽部件的温度，从而降低了其上的沉积速率。此外，屏蔽的清洁速率或沉积去除速率通常是其温度的函数（即，加工期间屏蔽变得越热，其可以被清洁的速度越快）。因此，第二屏蔽部件的清洁率将增加，从而提高过程的吞吐量。

42. 发明授权

US5800621A Plasma source for HDP-CVD chamber 失效
公开(公告)号：US5800621A
公开(公告)日：1998-09-01
申请号：US795169
申请日：1997-02-10
申请人： Fred C. Redeker , Tetsuya Ishikawa
发明人： Fred C. Redeker , Tetsuya Ishikawa
IPC分类号： C23C16/50 , H01J37/32 , H01L21/205 , H01L21/31 , H05H1/46 , C23C16/00
CPC分类号： H01J37/321 , H05H1/46 , H05H2001/4667
摘要： A plasma system is disclosed for processing a substrate and includes a chamber body defining a plasma cavity therein and having a centrally located gas inlet, and a top antenna configured in position relative to the plasma cavity to produce a center-peaked plasma density profile above the substrate during operation. The top antenna has a central passage which surrounds the centrally located gas inlet. A side antenna is preferably configured and positioned relative to the plasma chamber to produce a hollow-center plasma density profile above the substrate during operation. Together, the top and side antennas and the centrally located gas inlet provide a uniform plasma directly over the surface of the substrate to be processed.

43. 发明授权

US5944902A Plasma source for HDP-CVD chamber 失效
标题翻译： HDP-CVD室的等离子体源
公开(公告)号：US5944902A
公开(公告)日：1999-08-31
申请号：US98150
申请日：1998-06-16
申请人： Fred C. Redeker , Tetsuya Ishikawa
发明人： Fred C. Redeker , Tetsuya Ishikawa
IPC分类号： C23C16/50 , H01J37/32 , H01L21/205 , H01L21/31 , H05H1/46 , C23C16/00
CPC分类号： H01J37/321 , H05H1/46 , H05H2001/4667
摘要： A plasma system is disclosed for processing a substrate and includes a chamber body defining a plasma cavity therein and having a centrally located gas inlet, and a top antenna configured in position relative to the plasma cavity to produce a center-peaked plasma density profile above the substrate during operation. The top antenna has a central passage which surrounds the centrally located gas inlet. A side antenna is preferably configured and positioned relative to the plasma chamber to produce a hollow-center plasma density profile above the substrate during operation. Together, the top and side antennas and the centrally located gas inlet provide a uniform plasma directly over the surface of the substrate to be processed.
摘要翻译：公开了一种用于处理衬底的等离子体系统，并且包括在其中限定等离子体空腔并具有居中定位的气体入口的室主体，以及配置成相对于等离子体空间位置的顶部天线，以产生高于该等离子体腔的中心峰值等离子体密度分布底物。顶部天线具有围绕中心位置的气体入口的中心通道。优选地，侧面天线相对于等离子体室构造和定位，以在操作期间在衬底上产生空心中心等离子体密度分布。一起，顶部和侧面天线以及位于中心的气体入口在待处理的基板的表面上直接提供均匀的等离子体。

44. 发明授权

US06182602B2 Inductively coupled HDP-CVD reactor 失效
标题翻译：电感耦合HDP-CVD反应器
公开(公告)号：US06182602B2
公开(公告)日：2001-02-06
申请号：US08865018
申请日：1997-05-29
申请人： Fred C. Redeker , Romuald Nowak , Tetsuya Ishikawa , Troy Detrick , Jay Dee Pinson, II
发明人： Fred C. Redeker , Romuald Nowak , Tetsuya Ishikawa , Troy Detrick , Jay Dee Pinson, II
IPC分类号： C23C1600
CPC分类号： H01J37/32449 , C23C16/507 , H01J37/321 , H01J37/32467 , H01J37/32522 , H01J37/32862
摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.
摘要翻译：本发明提供一种HDP-CVD工具，其使用能够在晶片上具有优异的间隙填充和覆盖膜沉积的掺杂和未掺杂的二氧化硅的同时沉积和溅射。本发明的工具包括：双RF区电感耦合等离子体源; 双区气体分配系统; 工具内的温度控制表面; 对称成形的涡轮分子抽水室体; 双冷却区静电吸盘; 全陶瓷/铝合金室; 和远程等离子体室清洁系统。

45. 发明授权

US08671959B2 Method and apparatus for cleaning a substrate using non-newtonian fluids 有权
标题翻译：使用非牛顿流体清洗基材的方法和设备
公开(公告)号：US08671959B2
公开(公告)日：2014-03-18
申请号：US13252859
申请日：2011-10-04
申请人： John M. de Larios , Mike Ravkin , Jeffrey Farber , Mikhail Korolik , Fred C. Redeker
发明人： John M. de Larios , Mike Ravkin , Jeffrey Farber , Mikhail Korolik , Fred C. Redeker
IPC分类号： B08B3/00
CPC分类号： H01L21/67057 , B08B3/003 , B08B7/0014 , C11D7/5004 , C11D11/0047 , H01L21/02057 , H01L21/67051 , Y10S134/902
摘要： An apparatus for cleaning a substrate includes an application unit having a top inlet conduit and a bottom plate section. The top inlet conduit has an opening for receiving a non-Newtonian fluid and the bottom plate section has an opening through which the non-Newtonian fluid can flow. The bottom plate section is perpendicular to the top inlet conduit, and a surface of the bottom plate section is disposed above and parallel to a surface of a substrate so as to define a gap between the surface of the bottom plate section and the surface of the substrate. The defined gap has a height configured to create a flow of the non-Newtonian fluid in which a portion of the flow exhibits plug flow, and the plug flow moves over the surface of the substrate to remove particles from the surface of the substrate.
摘要翻译：用于清洁基板的装置包括具有顶部入口导管和底板部分的施加单元。顶部入口导管具有用于接收非牛顿流体的开口，底板部分具有非牛顿流体可以流过的开口。底板部分垂直于顶部入口导管，并且底板部分的表面设置在基板的表面上方并平行于基板的表面，以便限定底板部分的表面与底板部分的表面之间的间隙基质。限定的间隙具有构造成产生非牛顿流体的流动的高度，其中流体的一部分显示出塞子流动，并且塞子流动在衬底的表面上移动以从衬底的表面移除颗粒。

46. 发明授权

US08555903B2 Method and apparatus for removing contamination from substrate 失效
标题翻译：去除基材污染的方法和装置
公开(公告)号：US08555903B2
公开(公告)日：2013-10-15
申请号：US12620288
申请日：2009-11-17
申请人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker , Clint Thomas , John Parks
发明人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker , Clint Thomas , John Parks
IPC分类号： B08B3/00
CPC分类号： H01L21/02057 , B05D3/10 , B08B7/02 , C11D1/04 , C11D3/042 , C11D3/044 , C11D3/18 , C11D3/2079 , C11D3/222 , C11D3/225 , C11D3/3765 , C11D9/00 , C11D9/02 , C11D9/267 , C11D11/0047 , C11D17/0004 , C11D17/0013 , C11D17/0017 , C11D17/003 , C11D17/041 , C23G1/00 , C23G1/18 , G03F7/42 , G03F7/423 , H01L21/02052 , H01L21/02096 , H01L21/31133 , H01L21/67051 , H01L21/67057 , H01L21/6708 , H01L21/67086
摘要： A cleaning material is disposed over a substrate. The cleaning material includes solid components dispersed within a liquid medium. A force is applied to the solid components within the liquid medium to bring the solid components within proximity to contaminants present on the substrate. The force applied to the solid components can be exerted by an immiscible component within the liquid medium. When the solid components are brought within sufficient proximity to the contaminants, an interaction is established between the solid components and the contaminants. Then, the solid components are moved away from the substrate such that the contaminants having interacted with the solid components are removed from the substrate.
摘要翻译：清洁材料设置在基板上。清洁材料包括分散在液体介质中的固体组分。将力施加到液体介质中的固体组分以使固体组分接近存在于基底上的污染物。施加到固体组分的力可以通过液体介质中的不混溶组分施加。当固体组分被充分接近污染物时，在固体组分和污染物之间建立了相互作用。然后，将固体组分从衬底移开，使得与固体组分相互作用的污染物从衬底上除去。

47. 发明授权

US08522801B2 Method and apparatus for cleaning a semiconductor substrate 有权
标题翻译：用于清洁半导体衬底的方法和设备
公开(公告)号：US08522801B2
公开(公告)日：2013-09-03
申请号：US11612371
申请日：2006-12-18
申请人： Erik M. Freer , John M. deLarios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
发明人： Erik M. Freer , John M. deLarios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
IPC分类号： B08B3/00
CPC分类号： B08B7/00 , B08B3/00 , B08B7/02 , C11D9/02 , C11D11/0047 , C11D17/0017 , C23G1/18 , G03F7/423 , H01L21/02052 , H01L21/31133 , H01L21/67028 , H01L21/6708 , H01L21/67086
摘要： A method for cleaning a substrate is provided. The method initiates with disposing a fluid layer having solid components therein to a surface of the substrate. A shear force directed substantially parallel to the surface of the substrate and toward an outer edge of the substrate is then created. The shear force may result from a normal or tangential component of a force applied to a solid body in contact with the fluid layer in one embodiment. The surface of the substrate is rinsed to remove the fluid layer. A cleaning system and apparatus are also provided.
摘要翻译：提供一种清洗基板的方法。该方法通过将其中具有固体组分的流体层设置在基底的表面来启动。然后产生基本上平行于衬底的表面并朝向衬底的外边缘的剪切力。在一个实施例中，剪切力可以由施加到与流体层接触的固体的力的正常或切向分量产生。漂洗基材的表面以除去流体层。还提供清洁系统和装置。

48. 发明授权

US08490573B2 Method and apparatus for material deposition 有权
标题翻译：材料沉积的方法和装置
公开(公告)号：US08490573B2
公开(公告)日：2013-07-23
申请号：US12968114
申请日：2010-12-14
申请人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
发明人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
IPC分类号： B05C3/02 , B05D1/18
CPC分类号： C23C18/1612 , C23C18/14 , C23C18/161 , C23C18/1619 , C23C18/1651 , C23C18/1667 , C23C18/168 , C23C18/31 , H01L21/288
摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.
摘要翻译：概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。通过向晶片表面施加辐射能来提供选择性加热。晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。界面处的温度升高又导致在晶片表面发生电镀反应。因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

49. 发明授权

US08316866B2 Method and apparatus for cleaning a semiconductor substrate 失效
标题翻译：用于清洁半导体衬底的方法和设备
公开(公告)号：US08316866B2
公开(公告)日：2012-11-27
申请号：US11612352
申请日：2006-12-18
申请人： Erik M. Freer , John M. deLarios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
发明人： Erik M. Freer , John M. deLarios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
IPC分类号： B08B3/00
CPC分类号： H01L21/67092 , B08B3/00 , B08B7/00 , B08B7/02 , C11D9/02 , C11D11/0047 , C11D17/0017 , C23G1/18 , G03F7/423 , H01L21/02052 , H01L21/02057 , H01L21/02096 , H01L21/31133 , H01L21/67028 , H01L21/6708 , H01L21/67086 , Y10T137/4891
摘要： A method for cleaning a substrate is provided. The method initiates with applying an activation solution to a surface of the substrate. The activation solution and the surface of the substrate are contacted with a surface of a solid cleaning surface. The activation solution is absorbed into a portion of the solid cleaning element and then the substrate or the solid cleaning surface is moved relative to each other to clean the surface of the substrate. A method for cleaning the surface of the substrate with a solid cleaning element that experiences plastic deformation is also provided. Corresponding cleaning apparatuses are also provided.
摘要翻译：提供一种清洗基板的方法。该方法通过将激活溶液施加到基底的表面来启动。活化溶液和基材的表面与固体清洁表面的表面接触。活化溶液被吸收到固体清洁元件的一部分中，然后基底或固体清洁表面相对于彼此移动以清洁基底的表面。还提供了一种用经历塑性变形的固体清洁元件来清洁基板的表面的方法。还提供了相应的清洁装置。

50. 发明申请

US20120017950A1 METHOD AND APPARATUS FOR CLEANING A SUBSTRATE USING NON-NEWTONIAN FLUIDS 有权
标题翻译：用于清洁使用非牛顿流体的基材的方法和装置
公开(公告)号：US20120017950A1
公开(公告)日：2012-01-26
申请号：US13252859
申请日：2011-10-04
申请人： John M. de Larios , Mike Ravkin , Jeffrey Farber , Mikhail Korolik , Fred C. Redeker
发明人： John M. de Larios , Mike Ravkin , Jeffrey Farber , Mikhail Korolik , Fred C. Redeker
IPC分类号： B08B3/04
CPC分类号： H01L21/67057 , B08B3/003 , B08B7/0014 , C11D7/5004 , C11D11/0047 , H01L21/02057 , H01L21/67051 , Y10S134/902
摘要： A method for cleaning a substrate is provided. In this method, a flow of non-Newtonian fluid is provided where at least a portion of the flow exhibits plug flow. To remove particles from a surface of the substrate, the surface of the substrate is placed in contact with the portion of the flow that exhibits plug flow such that the portion of the flow exhibiting plug flow moves over the surface of the substrate. Additional methods and apparatuses for cleaning a substrate also are described.
摘要翻译：提供一种清洗基板的方法。在该方法中，提供了非牛顿流体的流动，其中至少一部分流动呈现出流动。为了从基板的表面去除颗粒，将基板的表面与显示塞子流的流动部分接触，使得显示塞子流的流动部分在基板的表面上移动。还描述了用于清洁基板的附加方法和装置。

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