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    • 42. 发明授权
    • High thermal conductivity diamond/non-diamond composite materials
    • 高导热性金刚石/非金刚石复合材料
    • US5270114A
    • 1993-12-14
    • US954671
    • 1992-09-30
    • John A. HerbJohn M. PinneoClayton F. Gardinier
    • John A. HerbJohn M. PinneoClayton F. Gardinier
    • C01B31/06C23C16/27B32B9/00
    • C23C16/274C01B31/065C23C16/27Y10T428/249955Y10T428/249956Y10T428/249967Y10T428/2991Y10T428/30
    • The present invention comprises an article formed from a plurality of diamond particles and non-diamond particles compatible with diamond deposition preformed into a desired shape. Each of the particles has first surface regions in contact with immediately adjacent other ones of the particles, and second surface regions spaced apart from the immediately adjacent other ones of said particles to define boundaries of inter-particle voids between the immediately adjacent ones of the particles. The voids are infiltrated with high thermal conductivity CVD diamond material continuously coating the second surface regions of the particles and comprising merged growth fronts from the second surface regions of individual immediately adjacent ones of the particles into the inter-particle voids. The high thermal conductivity CVD diamond material has an average crystallite size greater than about 15 microns, an intensity ratio of diamond- Raman-peak-to-photoluminescence background intensity greater than about 20, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1 and a diamond-to-graphite Raman ratio greater than about 25. The thermal conductivity of the CVD diamond materials is in excess of 17 Wcm.sup.-1 K.sup.-1.
    • 本发明包括由多个金刚石颗粒和与金刚石沉积相容的非金刚石颗粒形​​成的制品,其预成形为所需形状。 每个颗粒具有与直接相邻的其它颗粒接触的第一表面区域,以及与紧邻的另一个颗粒间隔开的第二表面区域,以限定紧邻的颗粒之间的颗粒间空隙的边界 。 空隙被高导热性CVD金刚石材料渗透,连续地涂覆颗粒的第二表面区域并且包括从单个紧邻的颗粒的第二表面区域到颗粒间空隙中的合并生长前沿。 高导热性CVD金刚石材料具有大于约15微米的平均微晶尺寸,金刚石 - 拉曼峰 - 光致发光背景强度的强度比大于约20,金刚石拉曼峰的最大强度以计数/秒计 除以大于约3的1270cm-1处的光致发光强度,小于约6cm -1的拉曼sp3全宽半最大值和大于约25的金刚石 - 石墨拉曼比。CVD的热导率 金刚石材料超过17 Wcm-1K-1。
    • 46. 发明授权
    • Methods for producing diamond materials with enhanced heat conductivity
    • 生产具有增强导热性的金刚石材料的方法
    • US5496596A
    • 1996-03-05
    • US188279
    • 1994-01-28
    • John A. HerbJohn M. PinneoClayton F. Gardinier
    • John A. HerbJohn M. PinneoClayton F. Gardinier
    • C01B31/06C23C16/04C23C16/27B05D3/06C23C16/26
    • C23C16/274C01B31/065C04B30/02C04B35/52C04B35/64C04B38/0038C23C16/045C23C16/27C04B2235/427C04B2235/667Y10T428/249955Y10T428/249956Y10T428/249957Y10T428/249967Y10T428/24997Y10T428/24999Y10T428/2938Y10T428/2991Y10T428/30
    • A method for growing a diamond film, substantially free of voids, having an average crystallite size greater than about 15 microns, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1, and a diamond-to-graphite Raman ratio greater than about 25, includes the steps of preparing a substrate by abrasion with diamond particles; placing the substrate in a CVD reactor; depositing diamond during a first deposition stage by providing an atmosphere consisting essentially of a mixture of about 200 sccm H.sub.2 and 10 sccm CH.sub.4, at a pressure of about 90 Torr, providing between about 1,800 and 1,950 watts of microwave power at a frequency of about 2.45 GHz to ignite and sustain a plasma in the region of said substrate, and maintaining the substrate at a temperature of between about 625.degree. C. and 675.degree. C. for a period of time sufficient to form a diamond layer which is substantially continuous; depositing a diamond during a second deposition stage by providing an atmosphere consisting essentially of a mixture of about 200 sccm H.sub.2, 4.6 sccm CO, and 9 ccm of CH.sub.4 at a pressure of about 90 Torr, providing between about 1,800 and 1,950 watts of microwave power at a frequency of between about 2.45 GHz and maintaining said substrate material at a temperature of between about 625.degree. C. and 675.degree. C. for a period of time sufficient to form a diamond layer having a desired thickness; and removing the substrate material from said CVD reactor.
    • 用于生长基本上不含空隙的金刚石膜的方法,其平均微晶尺寸大于约15微米,金刚石拉曼峰的最大强度计数/秒除以1270cm -1以上的光致发光强度大于约 如图3所示,拉曼峰3全宽半最小值小于约6cm -1,金刚石 - 石墨拉曼比大于约25,包括用金刚石颗粒磨损制备基底的步骤; 将衬底放置在CVD反应器中; 通过在大约90托的压力下提供基本上由大约200sccm H 2和10sccm CH 4的混合物组成的气氛,在第一沉积阶段沉积金刚石,以约2.45的频率提供约1,800至1950瓦的微波功率 以在所述衬底的区域中点燃和维持等离子体,并将衬底保持在约625℃至675℃之间的温度下足以形成基本连续的金刚石层的时间; 在第二沉积阶段通过在约90托的压力下提供基本上由大约200sccm H 2,4.6sccm CO和9cm 3 CH 4的混合物组成的气氛来沉积金刚石,提供约1,800至1950瓦的微波功率 以约2.45GHz的频率,并将所述衬底材料保持在约625℃至675℃之间的温度下足以形成具有所需厚度的金刚石层的时间; 以及从所述CVD反应器中去除衬底材料。
    • 47. 发明授权
    • Diamond/non-diamond materials with enhanced thermal conductivity
    • 具有增强导热性的钻石/非金刚石材料
    • US5316842A
    • 1994-05-31
    • US95314
    • 1993-07-21
    • John A. HerbJohn M. PinneoClayton F. Gardinier
    • John A. HerbJohn M. PinneoClayton F. Gardinier
    • C01B31/06C23C16/04C23C16/27B32B3/26
    • C23C16/274C01B31/065C04B30/02C04B35/52C04B35/64C04B38/0038C23C16/045C23C16/27C04B2235/427C04B2235/667Y10T428/249955Y10T428/249956Y10T428/249957Y10T428/249967Y10T428/24997Y10T428/24999Y10T428/2938Y10T428/2991Y10T428/30
    • The present invention comprises an article formed from a plurality of non-diamond particles compatible with diamond deposition preformed into a desired shape. Each of the particles has first surface regions in contact with immediately adjacent other ones of the particles, and second surface regions spaced apart from the immediately adjacent other ones of said particles to define boundaries of inter-particle voids between the immediately adjacent ones of the particles. The voids are infiltrated with high thermal conductivity CVD diamond material continuously coating the second surface regions of the particles and comprising merged growth fronts from the second surface regions of individual immediately adjacent ones of the particles into the inter-particle voids. The high thermal conductivity CVD diamond material has an average crystallite size greater than about 15 microns, an intensity ratio of diamond- Raman-peak-to-photoluminescence background intensity greater than about 20, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1 and a diamond-to-graphite Raman ratio greater than about 25. The thermal conductivity of the CVD diamond material is in excess of 17 Wcm.sup.-1 K.sup.-1.
    • 本发明包括由与形成所需形状的金刚石沉积相容的多个非金刚石颗粒形​​成的制品。 每个颗粒具有与直接相邻的其它颗粒接触的第一表面区域,以及与紧邻的另一个颗粒间隔开的第二表面区域,以限定紧邻的颗粒之间的颗粒间空隙的边界 。 空隙被高导热性CVD金刚石材料渗透,连续地涂覆颗粒的第二表面区域并且包括从单个紧邻的颗粒的第二表面区域到颗粒间空隙中的合并生长前沿。 高导热性CVD金刚石材料具有大于约15微米的平均微晶尺寸,金刚石 - 拉曼峰 - 光致发光背景强度的强度比大于约20,金刚石拉曼峰的最大强度以计数/秒计 除了大于约3的1270cm-1处的光致发光强度,小于约6cm -1的拉曼sp3全宽半最大值和大于约25的金刚石 - 石墨拉曼比。CVD的热导率 金刚石材料超过17 Wcm-1K-1。