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41. 发明授权

US5510930A Light amplifying apparatus 失效
标题翻译：光放大装置
公开(公告)号：US5510930A
公开(公告)日：1996-04-23
申请号：US276408
申请日：1994-07-18
申请人： Kuniaki Motoshima , Tadayoshi Kitayama , Junichiro Yamashita , Eiichi Nakagawa , Shigeyuki Akiba , Masatoshi Suzuki , Koji Goto , Haruo Abe , Naoki Norimatsu
发明人： Kuniaki Motoshima , Tadayoshi Kitayama , Junichiro Yamashita , Eiichi Nakagawa , Shigeyuki Akiba , Masatoshi Suzuki , Koji Goto , Haruo Abe , Naoki Norimatsu
IPC分类号： G02B27/28 , H01S3/06 , H01S3/07 , H01S3/094 , H01S3/10 , H01S3/00
CPC分类号： H01S3/094003 , H01S3/09408
摘要： A light amplifying apparatus adopting a redundant structure. Optical isolators 13, 14 are inserted between pump light sources 1, 2 and a photocoupler 4 so as to prevent injection locking, thereby preventing fluctuation of pump power.In another embodiment, optical fibers 15 adequately longer than the coherence length of the excitation light waves output from the pump light sources are provided. In still another embodiment, the frequency of the driving current for the pump light sources is modulated. In a further embodiment, wave plates 20, 21 are provided so as to circularly polarize the light waves output from the pump light sources clockwise and counterclockwise.
摘要翻译：采用冗余结构的光放大装置。光隔离器13,14插入在泵浦光源1,2和光电耦合器4之间，以防止注入锁定，从而防止泵浦功率的波动。在另一个实施例中，提供了足够长于从泵浦光源输出的激发光波的相干长度的光纤15。在另一个实施例中，泵浦光源的驱动电流的频率被调制。在另一实施例中，波片20,21被设置成使从泵浦光源输出的光波顺时针和逆时针圆偏振。

42. 发明授权

US4820655A Method for manufacturing semiconductor optical integrated device with optical waveguide regions 失效
标题翻译：具有光波导区域的半导体光集成器件的制造方法
公开(公告)号：US4820655A
公开(公告)日：1989-04-11
申请号：US15953
申请日：1987-02-18
申请人： Yukio Noda , Masatoshi Suzuki , Yukitoshi Kushiro , Shigeyuki Akiba
发明人： Yukio Noda , Masatoshi Suzuki , Yukitoshi Kushiro , Shigeyuki Akiba
IPC分类号： H01L27/15 , G02B6/122 , G02F1/025 , H01S5/00 , H01S5/026 , H01S5/10 , H01S5/12 , H01L21/20 , H01L21/203 , H01L21/205
CPC分类号： H01S5/0265 , H01S5/1021 , H01S5/12
摘要： A method for manufacturing a semiconductor optical integrated device in which a semiconductor element A having an optical waveguide region and a semiconductor element B having another optical waveguide region are integrated on a single substrate. In accordance with the present invention, there is provided steps of growing the optical waveguide region of the semiconductor element A and a protective layer therefor are grown on the entire area of the substrate surface, selectively removing them from the substrate surface in the region to be ultimately occupied by the semiconductor element B, and forming in the region the optical waveguide region of the semiconductor element B through crystal growth.
摘要翻译：一种半导体光学集成装置的制造方法，其中具有光波导区域的半导体元件A和具有另一个光波导区域的半导体元件B集成在单个基板上。根据本发明，提供了在衬底表面的整个区域上生长半导体元件A的光波导区域和其保护层的步骤，从该区域中的衬底表面选择性地将其除去最终由半导体元件B占据，并且通过晶体生长在该区域中形成半导体元件B的光波导区域。

43. 发明授权

US4811353A Semiconductor optical modulator 失效
标题翻译：半导体光调制器
公开(公告)号：US4811353A
公开(公告)日：1989-03-07
申请号：US15954
申请日：1987-02-18
申请人： Yukio Noda , Masatoshi Suzuki , Yukitoshi Kushiro , Shigeyuki Akiba
发明人： Yukio Noda , Masatoshi Suzuki , Yukitoshi Kushiro , Shigeyuki Akiba
IPC分类号： G02B6/12 , G02F1/015 , G02F1/025 , H01S5/00 , H01S5/026 , H01S5/12 , H01S5/16 , H01S3/19 , H01S3/10
CPC分类号： H01S5/16 , G02F1/025 , H01S5/0265 , H01S5/12 , H01S5/164 , H01S5/168
摘要： A semiconductor optical modulator is disclosed which is capable of high-speed modulation without the necessity of increasing the modulating voltage. The present invention has its feature in that the carrier density of the clad layer adjoining the optical waveguide layer 3 is gradually raised toward the p-n junction or Schottky junction, thereby increasing the width of the depletion layer to decrease the junction capacitance.
摘要翻译：公开了一种能够高速调制而不需要增加调制电压的半导体光调制器。本发明的特征在于，与光波导层3相邻的包层的载流子密度朝向p-n结或肖特基结逐渐升高，从而增加耗尽层的宽度以降低结电容。

44. 发明授权

US4773075A Light emitting device 失效
标题翻译：发光装置
公开(公告)号：US4773075A
公开(公告)日：1988-09-20
申请号：US893484
申请日：1986-08-05
申请人： Shigeyuki Akiba , Katsuyuki Utaka , Yukio Noda , Masatoshi Suzuki
发明人： Shigeyuki Akiba , Katsuyuki Utaka , Yukio Noda , Masatoshi Suzuki
IPC分类号： H01S5/00 , G02B6/42 , H01S3/107 , H01S5/022 , H01S5/026 , H01S5/068 , H01S5/12 , H01S3/19
CPC分类号： H01S5/0265 , G02B6/42 , G02B6/4207 , H01S5/0085 , H01S5/02248 , H01S5/0261 , H01S5/12
摘要： There is disclosed a light emitting device comprising at least a semiconductor laser and an optical modulating element for modulating the output light from the semiconductor laser. In accordance with the present invention, a capacitive element for suppressing noise of the semiconductor laser arising from reflected light is disposed in parallel relation to current injection terminals of the semiconductor laser.
摘要翻译：公开了一种至少包括半导体激光器和用于调制来自半导体激光器的输出光的光调制元件的发光器件。根据本发明，用于抑制由反射光产生的半导体激光器的噪声的电容元件与半导体激光器的电流注入端平行设置。

45. 发明授权

US5019519A Method for the manufacture of optical semiconductor device 失效
标题翻译：光半导体器件的制造方法
公开(公告)号：US5019519A
公开(公告)日：1991-05-28
申请号：US316865
申请日：1989-02-28
申请人： Hideaki Tanaka , Shigeyuki Akiba , Masatoshi Suzuki , Katsuyuki Utaka
发明人： Hideaki Tanaka , Shigeyuki Akiba , Masatoshi Suzuki , Katsuyuki Utaka
IPC分类号： H01L21/265 , G02B6/134 , H01L21/306 , H01L21/324 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/20
CPC分类号： H01S5/0265 , G02B6/1347 , H01L21/30612 , H01L21/3245 , H01S5/20 , H01S5/2059 , H01S5/2063 , Y10S148/084
摘要： An optical semiconductor device manufacturing method is disclosed which involves an ion implantation step of implanting ions into a compound semiconductor wafer through an ion implantation mask and an annealing step of activating atoms in the compound semiconductor wafer through an annealing mask film. The ion implantation step and the annealing step are performed in succession after laminating mono- or multi-layered compound semiconductor layers as the ion implantation mask and the annealing mask film on the compound semiconductor wafer.
摘要翻译：公开了一种光学半导体器件制造方法，其包括通过离子注入掩模将离子注入化合物半导体晶片的离子注入步骤和通过退火掩模膜激活化合物半导体晶片中的原子的退火步骤。在将单层或多层化合物半导体层作为离子注入掩模和化合物半导体晶片上的退火掩模膜层叠之后，依次进行离子注入步骤和退火步骤。

46. 发明授权

US4913506A Optical modulation device 失效
标题翻译：光调制装置
公开(公告)号：US4913506A
公开(公告)日：1990-04-03
申请号：US311218
申请日：1989-02-16
申请人： Masatoshi Suzuki , Shigeyuki Akiba , Hideaki Tanaka , Katsuyuki Utaka
发明人： Masatoshi Suzuki , Shigeyuki Akiba , Hideaki Tanaka , Katsuyuki Utaka
IPC分类号： G02F1/015 , G02F1/017 , G02F1/025 , G02B6/10
CPC分类号： B82Y20/00 , G02F1/01708 , G02F1/025 , G02F2001/0157 , G02F2202/101 , G02F2202/102
摘要： An optical modulation device is disclosed in which a difference between the photon energy of incident light and the band-gap energy of the modulation waveguide layer is set to a value greater than 50 meV to thereby suppress the degradation of the modulation voltage and the modulation band width which is caused by an increase in the intensity of incident light and in that the optical modulation device is formed in a predetermined length to thereby decrease the modulation voltage. The energy gap of the optical waveguide layer of the optical modulation device is varied continuously or discontinuously in the direction of its thickness to provide a constant absorption coefficient thickwise of the optical waveguide layer so that the electric field intensity distribution in the optical waveguide layer is compensated for, by which overlap of the light distribution and the absorption coefficient is increased so as to decrease the modulation voltage and broaden the modulation band by the reduction of the length of the device. The composition, thickness and stripe width of the optical waveguide layer are changed so that its absorption coefficient increases from the light receiving end face of the optical waveguide layer toward its light emitting end face, thereby making the number of carriers absorbed per unit length substantially constant in the direction of travel of light.
摘要翻译：公开了一种光调制装置，其中将入射光的光子能量与调制波导层的带隙能量之间的差设定为大于50meV的值，从而抑制调制电压和调制带的劣化由入射光强度的增加引起的宽度，并且光调制装置形成为预定长度，从而降低调制电压。光调制装置的光波导层的能隙在其厚度方向上连续或不连续地变化，以提供光波导层厚度的恒定吸收系数，使得光波导层中的电场强度分布得到补偿由此，增加了光分布和吸收系数的重叠，从而降低了调制电压，并且通过减小器件的长度来扩大调制频带。改变光波导层的组成，厚度和条纹宽度，使得其吸收系数从光波导层的光接收端面向其发光端面增加，从而使每单位长度吸收的载流子基本恒定在光的行进方向。

47. 发明授权

US5883734A Optical switch with reduced polarization dependency and no waveform deformation and frequency shift 失效
标题翻译：光开关具有降低的偏振依赖性，无波形变形和频移
公开(公告)号：US5883734A
公开(公告)日：1999-03-16
申请号：US827638
申请日：1997-04-10
申请人： Masatoshi Suzuki , Shigeyuki Akiba
发明人： Masatoshi Suzuki , Shigeyuki Akiba
IPC分类号： G02F1/33 , G02F1/29
CPC分类号： G02F1/33 , Y10S372/703
摘要： An optical switch is formed by: at least one switch driving circuit for generating ultrasonic waves; at least one electric acousto-optic element forming at least one diffraction grating therein upon being applied with the ultrasonic waves generated by the switch driving circuit; at least one polarization rotator for rotating a polarization plane of a first primary diffracted light produced by the diffraction grating, by 90.degree.; and a light path through which an input light is entered into the electric acousto-optic element at a Bragg angle of the diffraction grating in a first direction side, the first direction being defined as either identical or opposite to a propagation direction of the ultrasonic waves, so that the first primary diffracted light is produced by the diffraction grating from the input light, a polarization plane rotated light produced by the polarization rotator is entered into the electric acousto-optic element at a Bragg angle of the diffraction grating in a second direction side, the second direction being opposite to the first direction, and a second primary diffracted light produced by the diffraction grating from the polarization plane rotated light is outputted as an output light.
摘要翻译：光开关由以下部分形成：用于产生超声波的至少一个开关驱动电路; 在施加由开关驱动电路产生的超声波时，至少一个形成至少一个衍射光栅的电声元件; 至少一个偏振旋转器，用于将由衍射光栅产生的第一主衍射光的偏振面旋转90度; 以及光路，通过所述光路将输入光以第一方向侧的衍射光栅的布拉格角输入到所述电声元件中，所述第一方向被定义为与所述超声波的传播方向相同或相反，使得第一主衍射光由衍射光栅从输入光产生，由偏振旋转器产生的偏振面旋转光以第二方向的衍射光栅的布拉格角进入电声元件侧，第二方向与第一方向相反，并且输出由衍射光栅从偏振面旋转的光产生的第二主衍射光作为输出光。

48. 发明授权

US4991921A Pn junction optical modulating device having a buffer layer with small energy gap 失效
标题翻译：具有具有小能隙的缓冲层的Pn结光调制装置
公开(公告)号：US4991921A
公开(公告)日：1991-02-12
申请号：US442521
申请日：1989-11-27
申请人： Masatoshi Suzuki , Hideaki Tanaka , Shigeyuki Akiba , Yuichi Matsushima
发明人： Masatoshi Suzuki , Hideaki Tanaka , Shigeyuki Akiba , Yuichi Matsushima
IPC分类号： G02F1/015 , G02F1/025
CPC分类号： G02F1/025 , G02F2001/0157
摘要： An optical modulating device is disclosed which has, on a substrate directly or via a lower cladding layer, an optical waveguide layer, an upper cladding layer of a refractive index smaller than that of the optical waveguide layer and a pair of electrodes for applying an electric field across the substrate and the upper cladding layer and in which the absorption coefficient for incident light of a fixed intensity incident to the optical waveguide layer is varied by the electric field applied across the pair of electrodes to perform the modulation of the light and the modulated light is emitted from a light emitting end face of the optical waveguide layer. In accordance with the present invention, a pn junction is formed in the upper cladding layer and at least one buffer layer of an energy gap smaller than that of the upper cladding layer but larger than that of the optical waveguide layer is interposed between the upper cladding layer and the optical waveguide layer.
摘要翻译：公开了一种光学调制装置，其在衬底上直接或经由下包层，光波导层，折射率小于光波导层的折射率的上包层和用于施加电的一对电极并且其中入射到光波导层的固定强度的入射光的吸收系数由施加在该对电极上的电场而变化，以执行光的调制和被调制的光从光波导层的发光端面发射。根据本发明，在上部包层中形成pn结，并且至少一个能量间隙的缓冲层比上部包覆层的能隙小，但是比光波导层大的缓冲层插入在上部包层层和光波导层。

49. 发明授权

US4946243A Optical modulation element 失效
标题翻译：光调制元件
公开(公告)号：US4946243A
公开(公告)日：1990-08-07
申请号：US387511
申请日：1989-07-28
申请人： Masatoshi Suzuki , Shigeyuki Akiba , Hideaki Tanaka , Katsuyuki Utaka
发明人： Masatoshi Suzuki , Shigeyuki Akiba , Hideaki Tanaka , Katsuyuki Utaka
IPC分类号： G02B6/12 , G02F1/015 , G02F1/025 , H01L31/14 , H03C1/34
CPC分类号： G02F1/025 , G02F2001/0157
摘要： An optical modulation element is disclosed which has, on a substrate directly or through a lower clad layer, an optical waveguide layer of a low impurity concentration, an upper clad layer of a refractive index smaller than that of the optical waveguide layer, and electrodes, and in which light of a constant intensity incident on a light incident end face of the optical waveguide layer is intensity-modulated by changing the absorption coefficient of the optical waveguide layer by means of an electric field applied thereto across the electrodes so that the thus modulated light is emitted from a light emitting end face of the optical waveguide layer. In accordance with the present invention, a plurality of low impurity concentration regions and a plurality of high impurity concentration regions are disposed alternately with each other in contact with at least one of the lower and upper clad layers in the direction of travel of light in such a manner that the distribution density of the plurality of high impurity concentration regions increases in the direction of travel of light.

50. 发明授权

US4811352A Semiconductor integrated light emitting device 失效
标题翻译：半导体集成发光器件
公开(公告)号：US4811352A
公开(公告)日：1989-03-07
申请号：US147229
申请日：1988-01-22
申请人： Masatoshi Suzuki , Shigeyuki Akiba , Hideaki Tanaka , Yukitoshi Kushiro
发明人： Masatoshi Suzuki , Shigeyuki Akiba , Hideaki Tanaka , Yukitoshi Kushiro
IPC分类号： H01L27/15 , H01S5/00 , H01S5/026 , H01S5/12 , H01S5/125 , H01S3/19 , H01L33/00
CPC分类号： H01S5/125 , H01S5/0265 , H01S5/12
摘要： A semiconductor integrated light emitting device is disclosed which comprises a light emitting waveguide including a light emitting layer, and an external waveguide directly coupled to the light emitting waveguide. In accordance with the present invention, the light emitting waveguide and the external waveguide are mutually laminated in the vicinity of a region where they are directly coupled together.The intensity of the optical output from the light emitting waveguide is modulated in the external waveguide by the electroabsorption effect.
摘要翻译：公开了一种半导体集成发光器件，其包括包括发光层的发光波导和直接耦合到发光波导的外部波导。根据本发明，发光波导和外部波导相互层叠在直接耦合在一起的区域附近。通过电吸收效应在外部波导管中调制来自发光波导的光输出的强度。

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