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41. 发明申请

US20070207622A1 Highly selective doped oxide etchant 审中-公开
标题翻译：高选择性掺杂氧化物蚀刻剂
公开(公告)号：US20070207622A1
公开(公告)日：2007-09-06
申请号：US11360540
申请日：2006-02-23
申请人： Niraj Rana , Prashant Raghu , Kevin Torek
发明人： Niraj Rana , Prashant Raghu , Kevin Torek
IPC分类号： H01L21/302 , C03C15/00
CPC分类号： H01L21/31111 , C09K13/08
摘要： Etch solutions for selectively etching doped oxide materials in the presence of silicon nitride, titanium nitride, and silicon materials, and methods utilizing the etch solutions, for example, in the construction of container capacitor constructions are provided. The etch solutions are formulated as a mixture of hydrofluoric acid and an organic acid having a dielectric constant less than water, optionally with an inorganic acid, and a pH of 1 or less.
摘要翻译：提供了在氮化硅，氮化钛和硅材料的存在下选择性地蚀刻掺杂的氧化物材料的蚀刻解决方案，以及利用蚀刻溶液的方法，例如在容器电容器结构的构造中。蚀刻溶液配制为氢氟酸和介电常数小于水，任选与无机酸，pH为1或更小的有机酸的混合物。

42. 发明授权

US08932933B2 Methods of forming hydrophobic surfaces on semiconductor device structures, methods of forming semiconductor device structures, and semiconductor device structures 有权
标题翻译：在半导体器件结构上形成疏水表面的方法，形成半导体器件结构的方法和半导体器件结构
公开(公告)号：US08932933B2
公开(公告)日：2015-01-13
申请号：US13464645
申请日：2012-05-04
申请人： Ian C. Laboriante , Prashant Raghu
发明人： Ian C. Laboriante , Prashant Raghu
IPC分类号： H01L21/8242 , H01L21/302 , H01L21/461
CPC分类号： H01L24/11 , B81C1/00928 , H01L21/02063 , H01L21/321 , H01L24/14 , H01L28/90 , H01L2224/10155 , H01L2224/11019 , H01L2224/1182 , H01L2224/145 , H01L2924/01022 , H01L2924/0104 , H01L2924/01072 , H01L2924/01104 , H01L2924/35
摘要： A method of forming a hydrophobic surface on a semiconductor device structure. The method comprises forming at least one structure having at least one exposed surface comprising titanium atoms. The at least one exposed surface of at least one structure is contacted with at least one of an organo-phosphonic acid and an organo-phosphoric acid to form a material having a hydrophobic surface on the at least one exposed surface of the least one structure. A method of forming a semiconductor device structure and a semiconductor device structure are also described.
摘要翻译：在半导体器件结构上形成疏水性表面的方法。该方法包括形成至少一个具有至少一个包含钛原子的暴露表面的结构。将至少一种结构的至少一个暴露表面与有机膦酸和有机磷酸中的至少一种接触以形成在至少一个结构的至少一个暴露表面上具有疏水表面的材料。还描述了形成半导体器件结构和半导体器件结构的方法。

43. 发明授权

US08613864B2 Methods of forming semiconductor constructions 有权
标题翻译：形成半导体结构的方法
公开(公告)号：US08613864B2
公开(公告)日：2013-12-24
申请号：US13593373
申请日：2012-08-23
申请人： Prashant Raghu
发明人： Prashant Raghu
IPC分类号： C25F3/00
CPC分类号： H01L21/30604 , H01L27/10852 , H01L27/10894 , H01L28/91
摘要： The invention includes methods in which silicon is removed from titanium-containing container structures with an etching composition having a phosphorus-and-oxygen-containing compound therein. The etching composition can, for example, include one or both of ammonium hydroxide and tetra-methyl ammonium hydroxide. The invention also includes methods in which titanium-containing whiskers are removed from between titanium-containing capacitor electrodes. Such removal can be, for example, accomplished with an etch utilizing one or more of hydrofluoric acid, ammonium fluoride, nitric acid and hydrogen peroxide.
摘要翻译：本发明包括使用其中含有含磷和氧的化合物的蚀刻组合物从含钛容器结构中除去硅的方法。蚀刻组合物可以例如包括氢氧化铵和四甲基氢氧化铵中的一种或两种。本发明还包括从含钛电容器电极之间除去含钛晶须的方法。这种去除可以例如通过使用氢氟酸，氟化铵，硝酸和过氧化氢中的一种或多种的蚀刻来实现。

44. 发明申请

US20120306059A1 SELECTIVE WET ETCHING OF HAFNIUM ALUMINUM OXIDE FILMS 有权
标题翻译：氧化铝薄膜的选择性湿蚀刻
公开(公告)号：US20120306059A1
公开(公告)日：2012-12-06
申请号：US13585072
申请日：2012-08-14
申请人： Prashant Raghu , Yi Yang
发明人： Prashant Raghu , Yi Yang
IPC分类号： H01L23/58 , H01L21/28
CPC分类号： H01L23/564 , C09K13/04 , H01L21/31111 , H01L21/31144 , H01L2924/0002 , H01L2924/00
摘要： Methods and etchant compositions for wet etching to selectively remove a hafnium aluminum oxide (HfAlOx) material relative to silicon oxide (SiOx) are provided.
摘要翻译：提供了用于湿蚀刻以相对于氧化硅（SiO x）选择性去除铪氧化铝（HfAlO x）材料的方法和蚀刻剂组合物。

45. 发明申请

US20120276725A1 METHODS OF SELECTIVELY FORMING METAL-DOPED CHALCOGENIDE MATERIALS, METHODS OF SELECTIVELY DOPING CHALCOGENIDE MATERIALS, AND METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES INCLUDING SAME 有权
标题翻译：选择性形成金属聚合材料的方法，选择性聚合材料的方法，以及形成包括其中的半导体器件结构的方法
公开(公告)号：US20120276725A1
公开(公告)日：2012-11-01
申请号：US13094024
申请日：2011-04-26
申请人： Jerome A. Imonigie , Prashant Raghu , Theodore M. Taylor , Scott E. Sills
发明人： Jerome A. Imonigie , Prashant Raghu , Theodore M. Taylor , Scott E. Sills
IPC分类号： H01L21/228 , H01B1/02
CPC分类号： H01L45/1658 , H01L45/085 , H01L45/1233 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/1608 , H01L45/1641
摘要： Methods of selectively forming a metal-doped chalcogenide material comprise exposing a chalcogenide material to a transition metal solution, and incorporating transition metal of the transition solution into the chalcogenide material without substantially incorporating the transition metal into an adjacent material. The chalcogenide material is not silver selenide. Another method comprises forming a chalcogenide material adjacent to and in contact with an insulative material, exposing the chalcogenide material and the insulative material to a transition metal solution, and diffusing transition metal of the transition metal solution into the chalcogenide material while substantially no transition metal diffuses into the insulative material. A method of doping a chalcogenide material of a memory cell with at least one transition metal without using an etch or chemical mechanical planarization process to remove the transition metal from an insulative material of the memory cell is also disclosed, wherein the chalcogenide material is not silver selenide.
摘要翻译：选择性地形成金属掺杂的硫族化物材料的方法包括将硫族化物材料暴露于过渡金属溶液，并将过渡溶液的过渡金属掺入硫族化物材料中，而基本上不将过渡金属掺入相邻的材料中。硫族化物材料不是硒化银。另一种方法包括形成与绝缘材料相邻并与其接触的硫族化物材料，将硫属化物材料和绝缘材料暴露于过渡金属溶液，并将过渡金属溶液的过渡金属扩散到硫属化物材料中，同时基本上没有过渡金属扩散进入绝缘材料。还公开了一种使用至少一种过渡金属掺杂存储单元的硫族化物材料而不使用蚀刻或化学机械平坦化工艺以从存储器单元的绝缘材料除去过渡金属的方法，其中硫族化物材料不是银硒化物

46. 发明申请

US20110143543A1 Method of Forming Capacitors, and Methods of Utilizing Silicon Dioxide-Containing Masking Structures 有权
标题翻译：形成电容器的方法，以及使用含二氧化硅掩蔽结构的方法
公开(公告)号：US20110143543A1
公开(公告)日：2011-06-16
申请号：US13032492
申请日：2011-02-22
申请人： NIRAJ RANA , Nishant Sinha , Prashant Raghu , Jim Hofmann , Neil Greeley
发明人： NIRAJ RANA , Nishant Sinha , Prashant Raghu , Jim Hofmann , Neil Greeley
IPC分类号： H01L21/306
CPC分类号： H01L28/90 , H01G4/33 , H01L21/28282 , H01L21/31144 , H01L21/32139 , H01L27/10814 , H01L27/10855 , H01L27/11807 , Y10S438/906 , Y10T29/43
摘要： Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.
摘要翻译：一些实施例包括形成电容器的方法。存储节点形成在材料内。存储节点具有沿材料的侧壁。去除一些材料以暴露侧壁的部分。侧壁的暴露部分涂覆有未被水润湿的物质。除去附加材料以暴露侧壁的未涂覆区域。物质被去除，然后电容器电介质材料沿着存储节点的侧壁形成。然后在电容器电介质材料上形成电容器电极材料。一些实施方案包括利用含二氧化硅掩蔽结构的方法，其中掩蔽结构的二氧化硅被未被水润湿的物质涂覆。

47. 发明授权

US07892937B2 Methods of forming capacitors 有权
标题翻译：形成电容器的方法
公开(公告)号：US07892937B2
公开(公告)日：2011-02-22
申请号：US12252499
申请日：2008-10-16
申请人： Niraj Rana , Nishant Sinha , Prashant Raghu , Jim Hofmann , Neil Greeley
发明人： Niraj Rana , Nishant Sinha , Prashant Raghu , Jim Hofmann , Neil Greeley
IPC分类号： H01L21/20
CPC分类号： H01L28/90 , H01G4/33 , H01L21/28282 , H01L21/31144 , H01L21/32139 , H01L27/10814 , H01L27/10855 , H01L27/11807 , Y10S438/906 , Y10T29/43
摘要： Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.
摘要翻译：一些实施例包括形成电容器的方法。存储节点形成在材料内。存储节点具有沿材料的侧壁。去除一些材料以暴露侧壁的部分。侧壁的暴露部分涂覆有未被水润湿的物质。除去附加材料以暴露侧壁的未涂覆区域。物质被去除，然后电容器电介质材料沿着存储节点的侧壁形成。然后在电容器电介质材料上形成电容器电极材料。一些实施方案包括利用含二氧化硅掩蔽结构的方法，其中掩蔽结构的二氧化硅被未被水润湿的物质涂覆。

48. 发明申请

US20100190344A1 Methods of Forming Semiconductor Constructions 失效
标题翻译：形成半导体结构的方法
公开(公告)号：US20100190344A1
公开(公告)日：2010-07-29
申请号：US12750457
申请日：2010-03-30
申请人： Prashant Raghu
发明人： Prashant Raghu
IPC分类号： H01L21/306
CPC分类号： H01L21/30604 , H01L27/10852 , H01L27/10894 , H01L28/91
摘要： The invention includes methods in which silicon is removed from titanium-containing container structures with an etching composition having a phosphorus-and-oxygen-containing compound therein. The etching composition can, for example, include one or both of ammonium hydroxide and tetra-methyl ammonium hydroxide. The invention also includes methods in which titanium-containing whiskers are removed from between titanium-containing capacitor electrodes. Such removal can be, for example, accomplished with an etch utilizing one or more of hydrofluoric acid, ammonium fluoride, nitric acid and hydrogen peroxide.
摘要翻译：本发明包括使用其中含有含磷和氧的化合物的蚀刻组合物从含钛容器结构中除去硅的方法。蚀刻组合物可以例如包括氢氧化铵和四甲基氢氧化铵中的一种或两种。本发明还包括从含钛电容器电极之间除去含钛晶须的方法。这种去除可以例如通过使用氢氟酸，氟化铵，硝酸和过氧化氢中的一种或多种的蚀刻来实现。

49. 发明申请

US20080246124A1 PLASMA TREATMENT OF INSULATING MATERIAL 审中-公开
标题翻译：绝缘材料等离子体处理
公开(公告)号：US20080246124A1
公开(公告)日：2008-10-09
申请号：US11696262
申请日：2007-04-04
申请人： James Mathew , Prashant Raghu , Jaydeb Goswami
发明人： James Mathew , Prashant Raghu , Jaydeb Goswami
IPC分类号： H01L21/302 , H01L23/58
CPC分类号： H01L21/76831 , H01L21/76814
摘要： A method is disclosed which includes forming an opening in an insulating material, performing a plasma process to introduce nitrogen into a portion of the insulating material to thereby form a nitrogen-containing region at least on an inner surface of the opening, and, after forming the nitrogen-containing region, performing an etching process through the opening. A device is disclosed which includes an insulating material comprising a nitrogen-enhanced region that is proximate an opening that extends through the insulating material and a conductive structure positioned within the opening.
摘要翻译：公开了一种方法，其包括在绝缘材料中形成开口，执行等离子体处理以将氮气引入绝缘材料的一部分中，从而至少在开口的内表面上形成含氮区域，并且在形成之后含氮区域，通过开口进行蚀刻处理。公开了一种装置，其包括绝缘材料，该绝缘材料包括邻近延伸穿过绝缘材料的开口的氮增强区域和位于开口内的导电结构。

50. 发明申请

US20080090416A1 Methods of etching polysilicon and methods of forming pluralities of capacitors 有权
标题翻译：蚀刻多晶硅的方法和形成多个电容器的方法
公开(公告)号：US20080090416A1
公开(公告)日：2008-04-17
申请号：US11580418
申请日：2006-10-11
申请人： Prashant Raghu , Vishwanath Bhat , Niraj Rana
发明人： Prashant Raghu , Vishwanath Bhat , Niraj Rana
IPC分类号： H01L21/302
CPC分类号： H01L21/32134
摘要： A method of etching polysilicon includes exposing a substrate comprising polysilicon to a solution comprising water, HF, and at least one of a conductive metal nitride, Pt, and Au under conditions effective to etch polysilicon from the substrate. In one embodiment, a substrate first region comprising polysilicon and a substrate second region comprising at least one of a conductive metal nitride, Pt, and Au is exposed to a solution comprising water and HF. The solution is devoid of any detectable conductive metal nitride, Pt, and Au prior to the exposing. At least some of the at least one are etched into the solution upon the exposing. Then, polysilicon is etched from the first region at a faster rate than any etch rate of the first region polysilicon prior to the etching of the at least some of the conductive metal nitride, Pt, and Au.
摘要翻译：蚀刻多晶硅的方法包括在有效从衬底上蚀刻多晶硅的条件下将包括多晶硅的衬底暴露于包含水，HF和至少一种导电金属氮化物Pt和Au的溶液中。在一个实施例中，包括多晶硅的衬底第一区域和包括导电金属氮化物，Pt和Au中的至少一个的衬底第二区域暴露于包含水和HF的溶液中。该溶液在曝光之前没有任何可检测的导电金属氮化物，Pt和Au。至少一种至少一种在曝光时被蚀刻到溶液中。然后，在蚀刻至少一些导电金属氮化物Pt和Au之前，以比第一区域多晶硅的任何蚀刻速率更快的速率从第一区域蚀刻多晶硅。

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