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41. 发明授权

US08450728B2 Solid-state imaging device, method of manufacturing the same, and electronic apparatus 有权
标题翻译：固态成像装置及其制造方法以及电子装置
公开(公告)号：US08450728B2
公开(公告)日：2013-05-28
申请号：US12974295
申请日：2010-12-21
申请人： Tetsuji Yamaguchi
发明人： Tetsuji Yamaguchi
IPC分类号： H01L31/113
CPC分类号： H01L27/14603 , H01L27/1464 , H01L27/14643
摘要： A solid-state imaging device including a semiconductor substrate, a photoelectric conversion portion interposed between a lower electrode and an upper electrode, a contact plug formed so as to connect the lower electrode and the semiconductor substrate in order to read signal charges generated in the photoelectric conversion portion to the semiconductor substrate side, a vertical type transmitting path configured by sequentially laminating a connection portion for electrically connecting the contact plug to the semiconductor substrate, a charge accumulation layer for accumulating the signal charges read to the connection portion, and a potential barrier layer configuring a potential barrier between the connection portion and the charge accumulation layer in a vertical direction of the semiconductor substrate, and a charge reading portion configured to read the signal charges accumulated in the charge accumulation layer to the circuit forming surface side of the semiconductor substrate.
摘要翻译：一种固态成像装置，包括半导体衬底，介于下电极和上电极之间的光电转换部分，形成为连接下电极和半导体衬底的接触插塞，以便读取在光电转换部分到半导体衬底侧，垂直型传输路径，其通过顺序地层叠用于将接触插塞电连接到半导体衬底的连接部分，用于累积读取到连接部分的信号电荷的电荷累积层，以及势垒层构成在半导体衬底的垂直方向上的连接部分和电荷累积层之间的势垒;以及电荷读取部分，被配置为将累积在电荷累积层中的信号电荷读取到半导体衬底的电路形成表面侧。

42. 发明授权

US08410418B2 Solid-state imaging device, method for manufacturing the same, and imaging apparatus 有权
标题翻译：固态成像装置及其制造方法以及成像装置
公开(公告)号：US08410418B2
公开(公告)日：2013-04-02
申请号：US12598691
申请日：2007-08-20
申请人： Tetsuji Yamaguchi , Yuko Ohgishi , Takashi Ando , Harumi Ikeda
发明人： Tetsuji Yamaguchi , Yuko Ohgishi , Takashi Ando , Harumi Ikeda
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14636 , H01L27/1461 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/14683 , H01L27/14818 , H01L27/14868
摘要： Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging device 1 having a light-receiving portion 12 to photoelectrically convert incident light is characterized by including a film 21, which is disposed on a light-receiving surface 12s of the above-described light-receiving portion 12 and which lowers an interface state, and a film 22, which is disposed on the above-described film 21 to lower the interface state and which has a negative fixed charge, wherein a hole accumulation layer 23 is disposed on the light-receiving surface 12s side of the light-receiving portion 12.
摘要翻译：实现适当的空穴积聚层和减少暗电流被允许变得相互兼容。具有光电转换入射光的受光部12的固态成像装置1的特征在于，包括设置在上述受光部12的受光面12s上的膜21，界面状态和膜22，其设置在上述膜21上以降低界面状态并具有负的固定电荷，其中，空穴积累层23设置在该光接收表面12s侧光接收部分12。

43. 发明授权

US08362693B2 Display device and manufacturing method of display device 有权
标题翻译：显示装置及显示装置的制造方法
公开(公告)号：US08362693B2
公开(公告)日：2013-01-29
申请号：US13277478
申请日：2011-10-20
申请人： Shunpei Yamazaki , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda , Kengo Akimoto , Gen Fujii , Tetsuji Yamaguchi
发明人： Shunpei Yamazaki , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda , Kengo Akimoto , Gen Fujii , Tetsuji Yamaguchi
IPC分类号： H01L51/10
CPC分类号： H01L51/529 , H01L27/12 , H01L27/1214 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/66757 , H01L51/5206 , H01L51/5246 , H01L2251/5315 , H01L2251/5323
摘要： It is an object of the present invention to provide a reliable display device and a method for manufacturing the display device reducing the number of manufacturing steps, and with higher yield. A display device according to the invention includes a plurality of display elements each having a first electrode, a layer containing an organic compound, and a second electrode. The display device further includes a heat-resistant planarizing film over a substrate having an insulating surface, a first electrode over the heat-resistant, planarizing film, a wiring covering an end portion of the first electrode, a partition wall covering the end portion of first electrode and the wiring, a layer containing an organic compound, and a second electrode over the layer containing an organic compound.
摘要翻译：本发明的目的是提供一种可靠的显示装置和用于制造显示装置的方法，其减少制造步骤的数量，并且以更高的产量。根据本发明的显示装置包括多个显示元件，每个显示元件具有第一电极，含有有机化合物的层和第二电极。显示装置还包括在具有绝缘表面的基板上的耐热平面化膜，在耐热平坦化膜上的第一电极，覆盖第一电极的端部的布线，覆盖第一电极的端部的分隔壁第一电极和布线，含有有机化合物的层，以及包含有机化合物的层上的第二电极。

44. 发明授权

US08120111B2 Thin film transistor including insulating film and island-shaped semiconductor film 有权
标题翻译：薄膜晶体管包括绝缘膜和岛状半导体膜
公开(公告)号：US08120111B2
公开(公告)日：2012-02-21
申请号：US12078738
申请日：2008-04-04
申请人： Tetsuji Yamaguchi , Kengo Akimoto , Hiroki Kayoiji , Toru Takayama
发明人： Tetsuji Yamaguchi , Kengo Akimoto , Hiroki Kayoiji , Toru Takayama
IPC分类号： H01L27/13
CPC分类号： H01L27/12 , H01L27/1248
摘要： An object of the present invention is to provide a method for manufacturing a thin film transistor which enables heat treatment aimed at improving characteristics of a gate insulating film such as lowering of an interface level or reduction in a fixed charge without causing a problem of misalignment in patterning due to expansion or shrinkage of glass. A method for manufacturing a thin film transistor of the present invention comprises the steps of heat-treating in a state where at least a gate insulating film is formed over a semiconductor film on which element isolation is not performed, simultaneously isolating the gate insulating film and the semiconductor film into an element structure, forming an insulating film covering a side face of an exposed semiconductor film, thereby preventing a short-circuit between the semiconductor film and a gate electrode. Expansion or shrinkage of a glass substrate during the heat treatment can be prevented from affecting misalignment in patterning since the gate insulating film and the semiconductor film are simultaneously processed into element shapes after the heat treatment.
摘要翻译：本发明的目的是提供一种薄膜晶体管的制造方法，其能够进行旨在提高栅极绝缘膜的特性的热处理，例如降低界面电平或降低固定电荷，而不会引起不对准的问题由于玻璃的膨胀或收缩造成图案化。本发明的薄膜晶体管的制造方法包括以下步骤：在不进行元件隔离的半导体膜上形成至少栅极绝缘膜的状态下进行热处理，同时隔离栅极绝缘膜和将半导体膜形成为元件结构，形成覆盖露出的半导体膜的侧面的绝缘膜，由此防止半导体膜与栅电极之间的短路。由于栅极绝缘膜和半导体膜在热处理后同时被加工成元件形状，所以可以防止热处理期间的玻璃基板的膨胀或收缩，从而影响图案中的未对准。

45. 发明申请

US20110216212A1 SOLID-STATE IMAGING DEVICE, METHOD OF FABRICATING SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS 有权
标题翻译：固态成像装置，制造固态成像装置的方法，驱动固态成像装置的方法和电子装置
公开(公告)号：US20110216212A1
公开(公告)日：2011-09-08
申请号：US13029338
申请日：2011-02-17
申请人： Taiichiro Watanabe , Keiji Mabuchi , Tetsuji Yamaguchi , Isao Hirota , Kouichi Harada
发明人： Taiichiro Watanabe , Keiji Mabuchi , Tetsuji Yamaguchi , Isao Hirota , Kouichi Harada
IPC分类号： H04N5/228 , H01L31/113 , H01L31/18 , H04N5/335
CPC分类号： H04N5/3575 , H01L27/307 , H04N5/2353 , H04N5/353
摘要： A solid-state imaging device includes a substrate, a photoelectric conversion element provided on the light incidence side of the substrate and including a photoelectric conversion film sandwiched between a first electrode provided separately for each of pixels, and a second electrode provided opposite the first electrode, the photoelectric conversion film being made of an organic material or an inorganic material and generating a signal charge according to the quantity of incident light, an amplifier transistor having an amplifier gate electrode connected to the first electrode, and a voltage control circuit that is connected to the second electrode, and supplies a desired voltage to the second electrode.
摘要翻译：一种固态成像装置，包括基板，设置在基板的光入射侧的光电转换元件，并且包括被夹持在为每个像素单独设置的第一电极之间的光电转换膜和与第一电极相对设置的第二电极所述光电转换膜由有机材料或无机材料制成，并且根据入射光量产生信号电荷;放大晶体管，具有连接到所述第一电极的放大器栅电极;以及电压控制电路，并且向第二电极提供期望的电压。

46. 发明授权

US07724369B2 Correlator 有权
标题翻译：相关者
公开(公告)号：US07724369B2
公开(公告)日：2010-05-25
申请号：US12245902
申请日：2008-10-06
申请人： Tetsuji Yamaguchi , Shigeyuki Kawarabayashi
发明人： Tetsuji Yamaguchi , Shigeyuki Kawarabayashi
IPC分类号： G01N15/02
CPC分类号： G01N15/0205
摘要： In order to improve an accuracy of an autocorrelation function, a correlator comprises a counter 61 for receiving a pulse signal at given time intervals (sampling times) and counting the number of pulses; a shift register 63 for receiving the number of pulses counted by the counter 61 and performing sequential time delay; an operation part 64 for performing a product-sum operation of an output from the counter 61 and that delayed by the shift register 63 for each channel; and a control part 65 for setting a delay time or a sampling time by the shift register 63 on a basis of a relationship of the Fibonacci sequence.
摘要翻译：为了提高自相关函数的精度，相关器包括用于以给定时间间隔（采样时间）接收脉冲信号并计数脉冲数的计数器61; 移位寄存器63，用于接收由计数器61计数的脉冲数，并执行连续时间延迟; 操作部分64，用于对每个通道执行来自计数器61的输出和由移位寄存器63延迟的乘积和运算; 以及控制部分65，用于根据斐波纳契序列的关系设置移位寄存器63的延迟时间或采样时间。

47. 发明申请

US20100020353A1 IMAGE FORMING SYSTEM AND IMAGE FORMING APPARATUS 有权
标题翻译：图像形成系统和图像形成装置
公开(公告)号：US20100020353A1
公开(公告)日：2010-01-28
申请号：US12423310
申请日：2009-04-14
申请人： Tetsuji Yamaguchi
发明人： Tetsuji Yamaguchi
IPC分类号： G06F15/00
CPC分类号： H04N1/00 , H04N1/00209 , H04N1/0097 , H04N1/00973 , H04N1/33369 , H04N2201/0094
摘要： An image forming apparatus including: a data storage device that stores a user registration information item and/or user group registration information item as address book data; a communication processing section that receives a registration request message described in XML so as to include a plurality of user registration information items and/or user group registration information items; a SOAP processing section that extracts, when the communication processing section receives the registration request message from a client apparatus, each of the plurality of user registration information items and/or user group registration information items that are specified in the registration request message; and a control section that registers the user registration information item and/or user group registration information item that are extracted from the SOAP processing section in the address book data.
摘要翻译：一种图像形成装置，包括：数据存储装置，其将用户注册信息项和/或用户组注册信息项存储为地址簿数据; 通信处理部，其接收以XML描述的注册请求消息，以包括多个用户注册信息项和/或用户组注册信息项; SOAP处理部，当通信处理部从客户端装置接收到登记请求消息时，提取在登记请求消息中指定的多个用户登录信息项和/或用户组登记信息项中的每一个; 以及控制部，其将从SOAP处理部提取的用户注册信息项和/或用户组登记信息项登记在地址簿数据中。

48. 发明申请

US20090290195A1 IMAGE FORMING SYSTEM 失效
标题翻译：图像形成系统
公开(公告)号：US20090290195A1
公开(公告)日：2009-11-26
申请号：US12389036
申请日：2009-02-19
申请人： Tetsuji Yamaguchi , Daisuke Yoshida
发明人： Tetsuji Yamaguchi , Daisuke Yoshida
IPC分类号： G06F15/00
CPC分类号： G06F3/1288 , G06F3/1204 , G06F3/1254
摘要： An image forming system including a management device, an image forming apparatus including an auxiliary storage device, and a plurality of information processing devices, which are coupled to one another via a network, the image forming system being configured as follows. The management device is designed to: acquire a box information file regarding a document box created on the auxiliary storage device from the image forming apparatus via the network; and transmit the box information file to each of the plurality of information processing devices in its original format and a state after conversion thereof into a predetermined format. The plurality of information processing devices each control a printer driver compatible with the image forming apparatus to read the received box information file.
摘要翻译：一种图像形成系统，包括经由网络彼此耦合的管理装置，包括辅助存储装置的图像形成装置和多个信息处理装置，所述图像形成系统被配置如下。管理装置被设计成：通过网络从图像形成装置获取关于在辅助存储装置上创建的文件盒的框信息文件; 并将该盒信息文件以原始格式发送到多个信息处理装置中的每一个，并将其转换成预定格式之后的状态。多个信息处理装置各自控制与图像形成装置兼容的打印机驱动程序，以读取接收到的框信息文件。

49. 发明授权

US07575993B2 Method of manufacturing semiconductor device and display device 有权
标题翻译：制造半导体器件和显示装置的方法
公开(公告)号：US07575993B2
公开(公告)日：2009-08-18
申请号：US11724929
申请日：2007-03-16
申请人： Shunpei Yamazaki , Toru Takayama , Tetsuji Yamaguchi
发明人： Shunpei Yamazaki , Toru Takayama , Tetsuji Yamaguchi
IPC分类号： H01L21/44
CPC分类号： G02F1/136227 , G02F1/136286 , G02F2001/136295 , H01L27/1285 , H01L27/1292
摘要： To provide a method of forming a wiring for the purpose of providing a semiconductor device, which is superior in reliability and cost performance. Further, to provide methods of manufacturing a semiconductor device and a display device by using the method of forming the wiring according to the present invention. According to the present invention, when a wiring material and the like is directly patterned on a substrate mainly having an insulating surface by droplet discharging method, a wiring is formed at a position including at least an opening in contact with an underlying portion on an insulating film provided with the opening by dropping a liquid droplet containing a conductive composition by droplet discharging method. By heating the substrate with the wiring formed thereon, a surface of the wiring on the opening and a surface of the wiring other than the wiring on the opening are approximately leveled, and the opening is filled.
摘要翻译：为了提供一种形成布线的方法，用于提供可靠性和成本性能优异的半导体器件。此外，通过使用根据本发明的布线形成方法，提供制造半导体器件和显示器件的方法。根据本发明，当通过液滴喷射方法将主要具有绝缘表面的基板上的布线材料等直接图案化时，布线形成在至少具有与绝缘体上的下层部分接触的开口的位置通过滴落包含导电组合物的液滴通过液滴喷射法提供开口的膜。通过用形成在其上的布线来加热基板，开口上的布线的表面和除了开口上的布线以外的布线的表面几乎平整，并且开口被填充。

50. 发明申请

US20080191279A1 Thin film transistor, electronic device having the same, and method for manufacturing the same 有权
公开(公告)号：US20080191279A1
公开(公告)日：2008-08-14
申请号：US12078738
申请日：2008-04-04
申请人： Tetsuji Yamaguchi , Kengo Akimoto , Hiroki Kayoiji , Toru Takayama
发明人： Tetsuji Yamaguchi , Kengo Akimoto , Hiroki Kayoiji , Toru Takayama
IPC分类号： H01L29/739
CPC分类号： H01L27/12 , H01L27/1248
摘要： An object of the present invention is to provide a method for manufacturing a thin film transistor which enables heat treatment aimed at improving characteristics of a gate insulating film such as lowering of an interface level or reduction in a fixed charge without causing a problem of misalignment in patterning due to expansion or shrinkage of glass. A method for manufacturing a thin film transistor of the present invention comprises the steps of heat-treating in a state where at least a gate insulating film is formed over a semiconductor film on which element isolation is not performed, simultaneously isolating the gate insulating film and the semiconductor film into an element structure, forming an insulating film covering a side face of an exposed semiconductor film, thereby preventing a short-circuit between the semiconductor film and a gate electrode. Expansion or shrinkage of a glass substrate during the heat treatment can be prevented from affecting misalignment in patterning since the gate insulating film and the semiconductor film are simultaneously processed into element shapes after the heat treatment.

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