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41. 发明申请

US20050255667A1 Method of inducing stresses in the channel region of a transistor 失效
标题翻译：在晶体管的沟道区域中产生应力的方法
公开(公告)号：US20050255667A1
公开(公告)日：2005-11-17
申请号：US10846734
申请日：2004-05-14
申请人： Reza Arghavani , Zheng Yuan , Ellie Yieh , Shankar Venkataraman , Nitin Ingle
发明人： Reza Arghavani , Zheng Yuan , Ellie Yieh , Shankar Venkataraman , Nitin Ingle
IPC分类号： H01L21/336 , H01L21/76 , H01L21/8238 , H01L29/00 , H01L29/78
CPC分类号： H01L29/6656 , H01L21/823807 , H01L29/6659 , H01L29/7833 , H01L29/7846
摘要： A method of fabricating a semiconductor device, where the method includes forming on a transistor on a substrate, where the transistor includes a channel region configured to conduct charge between a source region and a drain region, forming a trench adjacent to the transistor, depositing a material on the substrate and within the trench, and annealing the material, where the material is tensile following the annealing and creates a tensile stress in the channel region. Also, a method of forming a trench isolation in a semiconductor device, where the method includes forming a trench in a substrate, forming a material within the trench at a lower deposition rate, forming the material on the substrate at a higher deposition rate after the depositing of the material within the trench, and annealing the material, where after the annealing the material in the trench is tensile.
摘要翻译：一种制造半导体器件的方法，其中所述方法包括在衬底上的晶体管上形成晶体管，其中所述晶体管包括被配置为在源极区域和漏极区域之间导电的沟道区域，形成与所述晶体管相邻的沟槽，材料在衬底上并在沟槽内，并退火材料，其中材料在退火之后是拉伸的，并且在沟道区域中产生拉伸应力。另外，在半导体器件中形成沟槽隔离的方法，其中所述方法包括在衬底中形成沟槽，以较低的沉积速率在沟槽内形成材料，在衬底上以更高的沉积速率在衬底上形成材料在沟槽内沉积材料并退火材料，其中在退火之后，沟槽中的材料是拉伸的。

42. 发明申请

US20050142895A1 Gap-fill depositions in the formation of silicon containing dielectric materials 失效
标题翻译：在形成含硅介电材料时的间隙填充沉积
公开(公告)号：US20050142895A1
公开(公告)日：2005-06-30
申请号：US11018381
申请日：2004-12-20
申请人： Nitin Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won Bang , Yen-Kun Wang , Zheng Yuan
发明人： Nitin Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won Bang , Yen-Kun Wang , Zheng Yuan
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , C23C16/52 , C23C16/00 , H01L21/31 , H01L21/469
CPC分类号： C23C16/45512 , C23C16/401 , C23C16/45523 , C23C16/52
摘要： A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.
摘要翻译：一种形成氧化硅层的方法，其中该方法包括提供含硅前体连续流入容纳衬底的室的步骤，其中含硅前体选自TMOS，TEOS，OMTS，OMCTS，和TOMCATS。该方法还可以包括以下步骤：向室提供氧化前体流，并使含硅前体和氧化前体之间的反应形成氧化硅层。该方法可以进一步包括随着时间的推移改变硅含量的前体：氧化前体流入室中以改变氧化硅在衬底上的沉积速率。

43. 发明授权

US06905939B2 Process for forming silicon oxide material 失效
标题翻译：用于形成氧化硅材料的方法
公开(公告)号：US06905939B2
公开(公告)日：2005-06-14
申请号：US10090103
申请日：2002-02-27
申请人： Zheng Yuan , Xinyun Xia
发明人： Zheng Yuan , Xinyun Xia
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , H01L21/316 , H01L21/321 , H01L21/76 , H01L21/31 , H01L21/311
CPC分类号： H01L21/31612 , C23C16/402 , C23C16/45525 , H01L21/02164 , H01L21/0228 , H01L21/32105
摘要： A thin layer of silicon oxide is formed by cyclic introduction of a silicon-containing precursor gas and an oxidizing gas separated by an intervening purge step. The resulting thin oxide layer enables subsequent conventional CVD of oxide to produce a more uniform deposited oxide layer over nonhomogenous surfaces, for example the silicon nitride mask/thermal oxide liner surfaces created during fabrication of shallow trench isolation structures.
摘要翻译：通过循环引入含硅前体气体和通过中间吹扫步骤分离的氧化气体形成氧化硅薄层。所得到的薄氧化物层使得随后的常规氧化物CVD能够在不均匀的表面上产生更均匀的沉积氧化物层，例如在浅沟槽隔离结构的制造期间产生的氮化硅掩模/热氧化物衬里表面。

44. 发明申请

US20050064730A1 Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill 有权
标题翻译：在TEOS /臭氧CVD期间使用TEOS上升的方法来改善间隙填充
公开(公告)号：US20050064730A1
公开(公告)日：2005-03-24
申请号：US10979471
申请日：2004-11-01
申请人： Nitin Ingle , Xinyua Xia , Zheng Yuan
发明人： Nitin Ingle , Xinyua Xia , Zheng Yuan
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , C23C16/52 , H01L21/469
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/45512 , C23C16/52 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/76801 , Y10S438/958
摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a predeposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.
摘要翻译：本发明的实施例提供了与氧化硅的化学气相沉积相关的方法，装置和装置。在一个实施例中，使用单步沉积工艺来有效地形成表现出高共形性和良好间隙填充性能的氧化硅层。在预沉积气流稳定阶段和初始沉积阶段期间，含硅气体：氧化剂沉积气体的比例相对较低，导致以相对较慢的速率形成高度保形的氧化硅。在沉积工艺步骤的过程中，含硅气体：氧化剂气体的比率增加，导致在沉积工艺步骤的后续阶段以相对较快的速率形成较小保形的氧化物材料。

45. 发明授权

US10419511B1 Unique watermark generation and detection during a conference 有权
公开(公告)号：US10419511B1
公开(公告)日：2019-09-17
申请号：US15285266
申请日：2016-10-04
申请人： Zheng Yuan
发明人： Zheng Yuan
IPC分类号： H04L29/06 , H04N21/8358 , H04N1/32
摘要： The unique watermark system comprising: identifying a presenter attendee, a first recipient attendee, and a second recipient attendee through a video conferencing session; detecting the presenter attendee sharing the visual content with the first recipient attendee and the second recipient attendee; selecting a first unique watermark and a second unique watermark from the plurality of unique watermarks and assigning them to a first recipient attendee and a second recipient attendee, respectively; inserting the first unique watermark into the visual content for the first recipient attendee and the second unique watermark into the visual content for the second recipient attendee; and transmitting the visual content with the first unique watermark to the first recipient attendee and the visual content with the second unique watermark to the second recipient attendee, wherein the method is performed by one or more special-purpose computing devices for hosting the video conferencing session.

46. 发明授权

US08250141B2 Real-time event notification for collaborative computing sessions 有权
标题翻译：协作计算会话的实时事件通知
公开(公告)号：US08250141B2
公开(公告)日：2012-08-21
申请号：US12168181
申请日：2008-07-07
申请人： Sihai Xiao , Zheng Yuan
发明人： Sihai Xiao , Zheng Yuan
IPC分类号： G06F15/16
CPC分类号： H04L67/24 , G06Q10/10 , H04L65/4015 , H04L67/14
摘要： In one embodiment, a determination is made that a specified event of a collaborative computing session has occurred. In response to the specified event, a real-time electronic notification is transmitted to a particular set of one or more attendees of the session that the event has occurred, the notification illustratively transmitted via a communication channel other than the session.
摘要翻译：在一个实施例中，确定协作计算会话的指定事件已经发生。响应于指定的事件，实时电子通知被发送到事件已经发生的会话的一个或多个参与者的特定集合，该通知经由会话以外的通信信道而被说明性地发送。

47. 发明申请

US20110202599A1 METHODS AND APPARATUSES FOR RECORDING AND VIEWING A COLLABORATION SESSION 有权
标题翻译：记录和查看合作会议的方法和设备
公开(公告)号：US20110202599A1
公开(公告)日：2011-08-18
申请号：US13094611
申请日：2011-04-26
申请人： Zheng Yuan , David Knight , Rohit Deep
发明人： Zheng Yuan , David Knight , Rohit Deep
IPC分类号： G06F15/16
CPC分类号： H04L67/22 , H04L67/14 , H04L67/148
摘要： In one embodiment, a collaboration session is maintained among a plurality of participant devices, at least one participant device operating as a presenter device that shares content during the collaboration session. Content shared during the collaboration session is recorded. A request is detected during the collaboration session from a particular participant device of the plurality of participant devices to view at least a portion of the recorded content. In response to the request during the collaboration from the particular participant device to view the at least a portion of the recorded content, the at least a portion of the recorded content is played back while the collaboration session is still ongoing, wherein the particular participant device remains an active participant in the ongoing collaboration session during playback of the at least a portion of the recorded content. Eventually, playback of the at least a portion of the recorded content is ceased.
摘要翻译：在一个实施例中，在多个参与者设备之间维护协作会话，至少一个参与者设备作为在协作会话期间共享内容的演示者设备。记录在协作会话期间共享的内容。在来自多个参与者设备的特定参与者设备的协作会话期间检测到请求以查看所记录的内容的至少一部分。响应于在来自特定参与者设备的协作期间查看所记录的内容的至少一部分的请求，在协作会话仍在进行的同时回放记录内容的至少一部分，其中特定参与者设备在播放记录的内容的至少一部分期间，仍然是正在进行的协作会话的积极参与者。最终，记录的内容的至少一部分的播放被停止。

48. 发明申请

US20100131868A1 LIMITEDLY SHARING APPLICATION WINDOWS IN APPLICATION SHARING SESSIONS 审中-公开
标题翻译：在申请分享会上分享应用窗口
公开(公告)号：US20100131868A1
公开(公告)日：2010-05-27
申请号：US12323903
申请日：2008-11-26
申请人： Jitendra P. Chawla , Zheng Yuan
发明人： Jitendra P. Chawla , Zheng Yuan
IPC分类号： G06F3/048
CPC分类号： G06F3/0481 , G06F3/044 , H04L12/1822
摘要： In one embodiment, an application sharing session may be established between a presenter device and one or more viewer devices, and at least one application window may be generated on the presenter device that is to be shared with the one or more viewer devices. At the presenter device, a determination may be made regarding which one or more predefined areas of the application window are to be limitedly shared. Accordingly, the application window may be shared with the one or more viewer devices, while limiting sharing of the one or more predefined areas of the application window.
摘要翻译：在一个实施例中，可以在演示器设备和一个或多个观看者设备之间建立应用共享会话，并且可以在要与一个或多个观看者设备共享的演示设备上生成至少一个应用窗口。在演示装置中，可以确定应用窗口的哪一个或多个预定义区域将被有限地共享。因此，应用程序窗口可以与一个或多个查看器设备共享，同时限制应用程序窗口的一个或多个预定义区域的共享。

49. 发明授权

US07459405B2 Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill 失效
标题翻译：在TEOS /臭氧CVD期间使用TEOS上升的方法来改善间隙填充
公开(公告)号：US07459405B2
公开(公告)日：2008-12-02
申请号：US11493211
申请日：2006-07-25
申请人： Nitin K. Ingle , Xinyua Xia , Zheng Yuan
发明人： Nitin K. Ingle , Xinyua Xia , Zheng Yuan
IPC分类号： H01L21/469 , H01L21/31 , H01L21/26
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/45512 , C23C16/52 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/76801 , Y10S438/958
摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.
摘要翻译：本发明的实施例提供了与氧化硅的化学气相沉积相关的方法，装置和装置。在一个实施例中，使用单步沉积工艺来有效地形成表现出高共形性和良好间隙填充性能的氧化硅层。在预沉积气体流动稳定阶段和初始沉积阶段期间，含硅气体：氧化剂沉积气体的比例相对较低，从而以相对较慢的速率形成高度保形的氧化硅。在沉积工艺步骤的过程中，含硅气体：氧化剂气体的比率增加，导致在沉积工艺步骤的后续阶段以相对较快的速率形成较小保形的氧化物材料。

50. 发明授权

US07456116B2 Gap-fill depositions in the formation of silicon containing dielectric materials 失效
标题翻译：在形成含硅介电材料时的间隙填充沉积
公开(公告)号：US07456116B2
公开(公告)日：2008-11-25
申请号：US11018381
申请日：2004-12-20
申请人： Nitin K. Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won B. Bang , Yen-Kun V. Wang , Zheng Yuan
发明人： Nitin K. Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won B. Bang , Yen-Kun V. Wang , Zheng Yuan
IPC分类号： H01L21/31
CPC分类号： C23C16/45512 , C23C16/401 , C23C16/45523 , C23C16/52
摘要： A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.
摘要翻译：一种形成氧化硅层的方法，其中该方法包括提供含硅前体连续流入容纳衬底的室的步骤，其中含硅前驱体选自TMOS，TEOS，OMTS，OMCTS，和TOMCATS。该方法还可以包括以下步骤：向室提供氧化前体流，并使含硅前体和氧化前体之间的反应形成氧化硅层。该方法可以进一步包括随着时间的推移改变硅含量的前体：氧化前体流入室中以改变氧化硅在衬底上的沉积速率。

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