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41. 发明专利

JPH0967117A PRODUCTION OF METAL ION EXCHANGER 失效
公开(公告)号：JPH0967117A
公开(公告)日：1997-03-11
申请号：JP22204695
申请日：1995-08-30
申请人： ASAHI GLASS CO LTD
发明人： NAKAHARA KATSUMASA , HIRANO HACHIRO
IPC分类号： C01B39/14 , C11D3/08
摘要： PROBLEM TO BE SOLVED: To efficiently produce a metal ion exchanger excellent in Ca ion exchange capacity, oil absorptivity, the impregnation of a surfactant, pH buffer action and sticking preventing property to clothes. SOLUTION: A A-type zeolite >=1μm in average particle diameter is mechanically pulverized into a A-type zeolite

42. 发明专利

JPH03137058A PRODUCTION OF ALUMINUM NITRIDE SUBSTRATE 失效
公开(公告)号：JPH03137058A
公开(公告)日：1991-06-11
申请号：JP27502789
申请日：1989-10-24
申请人： ASAHI GLASS CO LTD
发明人： NAKAHARA KATSUMASA
IPC分类号： C04B35/581 , C04B35/58
摘要： PURPOSE:To efficiently obtain an aluminum nitride substrate excellent in smoothness as well as in flatness by laminating green sheets of aluminum nitride on a supporting base while interposing ceramic powder between the above green sheets, placing a weight material on the uppermost part, and then applying degreasing and burning to the above. CONSTITUTION:Two or more green sheets 1 of aluminum nitride cut into the prescribed size are piled up in layers on a setter 3 as a supporting base into a state where ceramic powder 2 is interposed between the above green sheets 1. Further, a weight material 4 is placed on the uppermost part of the above, and the resulting laminated material is heated in an oxidizing atmosphere to undergo degreasing and then subjected to burning in a nonoxidizing atmosphere, by which the desired aluminum nitride substrate is obtained. At this time, the proper amount of oxygen as an impurity in the aluminum nitride powder as a raw material is

43. 发明专利

JPH038315A COMPOSITE SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH038315A
公开(公告)日：1991-01-16
申请号：JP14226689
申请日：1989-06-06
申请人： ASAHI GLASS CO LTD
发明人： ASARI GORO , IRISAWA NAOSHI , NAKAHARA KATSUMASA
IPC分类号： H01L21/02
摘要： PURPOSE:To obtain a substrate for electric power which is superior in thermal characteristics by control the thermal expansion coefficient of the substrate so that its coefficient is matched with that of an intended semiconductor. CONSTITUTION:Junction between two different substrates 4 and 6 of AlN and Si is performed through an intermediate layer 5. In such a case, the thermal expansion coefficient of the substrate 4 is regulated so that its coefficient becomes equal to that of the substrate 6. When the other GaAs layer is allowed to perform an epitaxial growth for LEDs, FETs and the like on a composite semiconductor substrate, the thermal expansion coefficient of the substrate 4 is equalized to that of GaAs and when a semiconductor element and the like are formed directly on the substrate 6, each thermal expansion coefficient is adjusted to that of Si. Further, the junction surface of the substrate 4, the thermal expansion coefficient of which is adjusted in advance to intended value, is ground to have an exceedingly flat surface and is finished to obtain a mirror surface. After depositing an SiO2 layer 5 on the above surface, the substrate 6 is put on top of the preceding surface by applying a pressure on the substrate 6 which is finished in the same manner and then, its substrate is treated with heat. The substrate 6 is thus bonded firmly onto the substrate 4.

44. 发明专利

JPH01230481A PRODUCTION OF SINTERED ALUMINUM NITRIDE 失效
公开(公告)号：JPH01230481A
公开(公告)日：1989-09-13
申请号：JP5635588
申请日：1988-03-11
申请人： ASAHI GLASS CO LTD
发明人： WATANABE KAZUNARI , NAKAHARA KATSUMASA , IRISAWA NAOSHI , TAKAHATA MITSUO , SASAKI MIKIO
IPC分类号： C04B35/581
摘要： PURPOSE:To stably obtain a sintered aluminum nitride having high thermal conductivity, by forming an article from aluminum nitride powder mixed with a sintering assistant and calcining the article together with a carbon source in a capsule having non-carbonaceous inner face in a non-oxidizing atmosphere. CONSTITUTION:A mixture of aluminum nitride and a sintering assistant is formed and the obtained formed aluminum nitride is put together with a carbon source into a capsule having a non-carbonaceous face at least on the inner face and calcined in a non-oxidizing atmosphere to obtain the objective sintered material. The aluminum nitride powder used in the present process preferably has high purity, e.g., >=98%. Powder having particle diameter of >10mum undesirably decreases the sinterability. The sintering assistant to be added to the aluminum nitride powder is effective in giving a dense sintered material and is preferably Y2O3, CaO, etc. Too much sintering assistant undesirably increases the crystal phase other than aluminum nitride and lowers the thermal conductivity. The preferable amount of the sintering assistant is

45. 发明专利

JPH01206508A CONDUCTIVE PASTE FOR ALUMINUM NITRIDE SUBSTRATE 失效
公开(公告)号：JPH01206508A
公开(公告)日：1989-08-18
申请号：JP26713688
申请日：1988-10-25
申请人： ASAHI GLASS CO LTD
发明人： WATANABE KAZUNARI , IRISAWA NAOSHI , NAKAHARA KATSUMASA , NATSUI TETSUO
IPC分类号： H01B1/16 , H05K1/09
摘要： PURPOSE:To form a fine circuit pattern, prevent any generation of migration and enhance bonding strength by providing such a composition of an inorganic component that includes each specific amount of conductive metallic power, active metallic powder, metallic powder having a lower melting point and/or metallic compound power having a lower melting point. CONSTITUTION:A conductive paste in the caption has a composition of an inorganic component thereof including 50-90wt.% of conductive metallic powder, 8-40wt.% of active metallic powder, 2-30wt.% of metallic powder having a lower melting point and/or 2-30wt.% of metallic compound powder having a lower melting point. It has also another composition of the inorganic component thereof including 20-80wt.% of the conductive metallic powder, 15-50wt.% of the active metallic powder, 2-30wt.% of indium powder and/or 2-30wt.% of indium compound. Noble metallic powder including Ag, Pd or the like or base metallic powder including Cu, Ni or the like is used as the metallic powder. Ti, TiH2, Ti alloy, Zr, ZrH2 or Zr alloy is used as the active metallic powder.

46. 发明专利

JPS62237604A CONDUCTOR COMPOSITION 失效
公开(公告)号：JPS62237604A
公开(公告)日：1987-10-17
申请号：JP7924386
申请日：1986-04-08
申请人： ASAHI GLASS CO LTD
发明人： NAKAHARA KATSUMASA , MINOWA TOSHIO , SASAKI MIKIO
IPC分类号： H01B1/16 , C03C8/14

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