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    • 45. 发明公开
    • 비등방성 전기접속 소재의 제조방법 및 그 방법에 의해 제조된 비등방성 전기접속 소재
    • 用于制造电气连接用的异种材料的方法和由其制造的各向异性材料
    • KR1020130021721A
    • 2013-03-06
    • KR1020110084159
    • 2011-08-23
    • 한국에너지기술연구원전자부품연구원
    • 고창현김종남박종호한철종
    • H01R43/00H01R4/58H01L27/00
    • PURPOSE: Anisotropic electric connection materials and a manufacturing method thereof are provided to implement a fine pitch connection method by including a nanostructure or a microstructure. CONSTITUTION: An insulator layer is formed on sacrifice layers laminated on a silicon wafer(b). A photosensitive film is formed on the insulator layer, and a pattern for the photosensitive film is formed(c). After the insulator layer is selectively etched, the photosensitive film is removed(d). A barrier metal layer is formed on a surface of the insulator layer(e). A conductive metal plug is formed inside a penetration hole of the insulator layer laminated on the barrier metal layer(f). An upper surface in which the conductive metal plug is ground(g). [Reference numerals] (AA) Start; (B1) Step a; (B2) Laminating a sacrifice layer on an Si wafer; (C1) Step b; (C2) Forming an insulator thin film; (D1) Step c; (D2) Forming a photosensitive film, and patterning; (E1) Step d; (E2) Etching, and removing the photosensitive film; (F1) Step e; (F2) Forming a barrier metal film; (G1) Step f; (G2) Forming a conductive metal plug; (H1) Step g; (H2) Separating a node; (I1) Step h; (I2) Cutting the wafer; (J1) Step i; (J2) Separating an anisotropic thin film; (KK) End
    • 目的:提供各向异性电连接材料及其制造方法,以通过包括纳米结构或微结构来实现细间距连接方法。 构成:在层叠在硅晶片(b)上的牺牲层上形成绝缘体层。 在绝缘体层上形成感光性膜,形成感光性膜的图案(c)。 在选择性地蚀刻绝缘体层之后,去除感光膜(d)。 在绝缘体层(e)的表面上形成阻挡金属层。 导电金属插塞形成在层压在阻挡金属层(f)上的绝缘体层的穿透孔的内部。 导电金属插头被研磨的上表面(g)。 (附图标记)(AA)开始; (B1)步骤a; (B2)在Si晶片上层压牺牲层; (C1)步骤b; (C2)形成绝缘体薄膜; (D1)步骤c; (D2)形成感光性膜,构图; (E1)步骤d; (E2)蚀刻,除去感光膜; (F1)步骤e; (F2)形成阻挡金属膜; (G1)步骤f; (G2)形成导电金属插头; (H1)步骤g; (H2)分离节点; (I1)步骤h; (I2)切割晶片; (J1)步骤i; (J2)分离各向异性薄膜; (KK)结束