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41. 发明公开

KR1020080017849A 아미드계 화합물을 포함하는 포토레지스트 박리액 및 이를이용한 박리 방법 有权
标题翻译：含有粘合剂的光电离子液体和使用其的剥离光电子的方法
公开(公告)号：KR1020080017849A
公开(公告)日：2008-02-27
申请号：KR1020060079578
申请日：2006-08-22
申请人： 동우 화인켐 주식회사
发明人： 홍형표 , 김병묵 , 김태희
IPC分类号： G03F7/42
摘要： A photoresist stripping solution, and a stripping method using the stripping solution are provided to improve the stripping effect of a cured photoresist film and to prevent the corrosion of a metal wiring and an interlayer insulating layer by lowering the surface tension of a stripping solution. A photoresist stripping solution comprises an amide-based compound represented by the formula 1, wherein R1 is H, a C1-C10 linear or branched alkyl group, a C5-C8 cycloalkyl group or a C6-C10 aryl group. Also the photoresist stripping solution comprises 1-20 wt% of an amide-based compound represented by the formula 1; 5-50 wt% of a water-soluble organic amine-based compound; 1-20 wt% of a hydroxyl amine salt-based compound; 1-40 wt% of a water-soluble polar aprotic solvent; 1-20 wt% of an alkylene glycol alkyl ether compound; 0.1-10 wt% of a compound represented by the formula 2; 0.1-10 wt% of an aromatic hydroxy compound; and 10-50 wt% of deionized water, wherein R2 and R3 are identical or different each other and are H, a carboxyl group, an alkylcarbonyl group, a hydroxyl group or an alkyl group.
摘要翻译：提供光致抗蚀剂剥离溶液和使用剥离溶液的剥离方法以改善固化的光致抗蚀剂膜的剥离效果，并通过降低剥离溶液的表面张力来防止金属布线和层间绝缘层的腐蚀。光致抗蚀剂剥离溶液包含由式1表示的酰胺类化合物，其中R1是H，C1-C10直链或支链烷基，C5-C8环烷基或C6-C10芳基。光致抗蚀剂剥离溶液也包含1-20重量％的由式1表示的酰胺类化合物; 5-50重量％的水溶性有机胺系化合物; 1-20重量％的羟胺盐类化合物; 1-40重量％的水溶性极性非质子溶剂; 1-20重量％的亚烷基二醇烷基醚化合物; 0.1-10重量％的由式2表示的化合物; 0.1-10重量％的芳族羟基化合物; 和10-50重量％的去离子水，其中R2和R3相同或不同，为H，羧基，烷基羰基，羟基或烷基。

42. 发明授权

KR101344168B1 폴리이미드 리무버 조성물 有权
标题翻译：聚酰亚胺去除组合物
公开(公告)号：KR101344168B1
公开(公告)日：2013-12-20
申请号：KR1020060131901
申请日：2006-12-21
申请人： 동우 화인켐 주식회사
发明人： 김태희 , 윤효중 , 홍헌표
IPC分类号： C08L79/02 , C08K3/20
CPC分类号： Y02P20/582
摘要： 본발명은폴리이미드막의제거성능이우수할뿐만아니라, 알루미늄부식성이없으며, 더불어서, 컬럼스페이서의탄성에영향을주지않고부식도최소화되는폴리이미드리무버조성물을제공한다.

43. 发明公开

KR1020100125108A 구리용 레지스트 제거용 조성물 无效
标题翻译：铜或铜合金剥离组合物
公开(公告)号：KR1020100125108A
公开(公告)日：2010-11-30
申请号：KR1020090044149
申请日：2009-05-20
申请人： 동우 화인켐 주식회사
发明人： 홍형표 , 홍헌표 , 김태희 , 김병묵
IPC分类号： G03F7/42
CPC分类号： G03F7/425 , C07D295/15 , C11D3/2068 , C11D11/0047 , G03F7/0045 , G03F7/0397 , G03F7/0757 , G03F7/091
摘要： PURPOSE: A stripper composition for copper or copper alloy is provided to be applied in a dip method and spray type stripping process and to remove a photoresist film hardened by a photolithographic process and wet etch process. CONSTITUTION: A stripper composition for copper or copper alloy comprises (A) 0.1-30 weight% tertiary cyclic amine compound represented by chemical formula 1 or 2, (B) 0.01-10 weight% additive, and (C) the balance of organic solvent. In chemical formula 1 and 2, R1-R6 are independently hydrogen, C1~C10 linear or branched alkyl group; n1 and n3 are independently an integer of 0 or 1; n2 and n4 are independently an integer of 0-4; X1 and X2 are independently S, and O or N; and Y is a hydroxy group or amino group.
摘要翻译：目的：提供用于铜或铜合金的汽提器组合物，以浸渍法和喷雾型剥离方法施加，并除去通过光刻工艺和湿蚀刻工艺硬化的光致抗蚀剂膜。构成：铜或铜合金的剥离剂组合物包含（A）0.1-30重量％的由化学式1或2表示的叔环状胺化合物，（B）0.01-10重量％的添加剂，和（C）余量的有机溶剂。在化学式1和2中，R 1 -R 6独立地是氢，C 1〜C 10直链或支链烷基; n1和n3独立地为0或1的整数; n2和n4独立地为0-4的整数; X 1和X 2独立地为S，O或N; Y为羟基或氨基。

44. 发明公开

KR1020080045501A 포토레지스트 박리액 조성물 및 이를 이용한포토레지스트의 박리방법 无效
标题翻译：光电子剥离器组合物，以及使用其的光电离子的挥发方法
公开(公告)号：KR1020080045501A
公开(公告)日：2008-05-23
申请号：KR1020060114700
申请日：2006-11-20
申请人： 동우 화인켐 주식회사
发明人： 김태희 , 박면규 , 정진우
IPC分类号： G03F7/42
摘要： A photoresist stripper composition is provided to ensure excellent corrosion resistance to a substrate on which a multiple-junction metal wiring containing silver is formed, and to be rinsed with only water without using a separate organic solvent during a rinsing process. A non-aqueous photoresist stripper composition that does not cause corrosion of silver wiring, includes 10-40wt% of an organic amine-based compound, 30-80wt% of a polar organic solvent, and 0.1-10wt% of a triazole-based compound. A method for stripping photoresist includes the steps of: (a) applying a photoresist composition onto a substrate having a metal layer, and drying the coated substrate to form a photoresist film; (b) exposing the photoresist film to a light selectively, and developing the exposed photoresist film to form a photoresist pattern; (c) etching the substrate using the photoresist pattern as a mask; and (d) removing the photoresist pattern from the substrate using the non-aqueous photoresist stripper composition.
摘要翻译：提供光致抗蚀剂剥离剂组合物以确保对其中形成含有银的多结金属配线的基板的优异的耐腐蚀性，并且在漂洗过程中仅使用水而不使用单独的有机溶剂进行冲洗。不引起银线腐蚀的非水性光致抗蚀剂剥离剂组合物包含10〜40重量％的有机胺系化合物，30〜80重量％的极性有机溶剂和0.1〜10重量％的三唑系化合物。剥离光刻胶的方法包括以下步骤：（a）将光致抗蚀剂组合物涂覆到具有金属层的基底上，并干燥涂覆的基底以形成光致抗蚀剂膜; （b）将光致抗蚀剂膜选择性地曝光，并使曝光的光致抗蚀剂膜显影以形成光致抗蚀剂图案; （c）使用光致抗蚀剂图案作为掩模蚀刻基板; 和（d）使用非水性光致抗蚀剂剥离剂组合物从基材上除去光刻胶图案。

45. 发明公开

KR1020080031565A 포토레지스트 박리용 조성물 및 이를 이용한 박리 방법 无效
标题翻译：光电离子组合物和使用它的光电离子的挥发方法
公开(公告)号：KR1020080031565A
公开(公告)日：2008-04-10
申请号：KR1020060097584
申请日：2006-10-04
申请人： 동우 화인켐 주식회사
发明人： 홍형표 , 김태희 , 김병묵
IPC分类号： G03F7/42
摘要： A photoresist stripper composition is provided to ensure excellent removability of photoresist cured after an ion injection process or an ion injection process and a high-temperature etching process, and minimize corrosion of film. A photoresist stripper composition includes 5-50wt% of an alkaline compound, 1-40wt% of a water-soluble polar solvent compound, 5-40wt% of an alkyleneglycol alkylether compound, 5-40wt% of a deionized distilled water, 0.01-10wt% of a corrosion inhibitor, 0.01-10wt% of a pH control agent, and 0.001-10wt% of a fluorinated compound. The molar ratio of fluorine ions/hydroxide ions contained in the composition is 1x10^(-6) - 1.
摘要翻译：提供光致抗蚀剂剥离剂组合物以确保在离子注入工艺或离子注入工艺和高温蚀刻工艺之后固化的光致抗蚀剂的优异的可除去性，并且使膜的腐蚀最小化。光致抗蚀剂剥离剂组合物包括5-50重量％的碱性化合物，1-40重量％的水溶性极性溶剂化合物，5-40重量％的亚烷基二醇烷基醚化合物，5-40重量％的去离子蒸馏水，0.01-10重量％％的腐蚀抑制剂，0.01-10重量％的pH控制剂和0.001-10重量％的氟化化合物。组合物中所含的氟离子/氢氧根离子的摩尔比为1×10 ^（ - 6）-1。

46. 发明公开

KR1020060011699A 알루미늄 에칭 폐액 재생 및 인산의 고순도 정제 방법 有权
标题翻译：从废弃铝蚀刻剂中回收磷酸的方法和高纯度磷酸的纯化方法
公开(公告)号：KR1020060011699A
公开(公告)日：2006-02-03
申请号：KR1020040060679
申请日：2004-07-31
申请人： 동우 화인켐 주식회사
发明人： 김기섭 , 이근재 , 김태희
IPC分类号： C23F1/46 , B82Y40/00
CPC分类号： C23F1/46
摘要： 본 발명은 알루미늄의 에칭 공정에서 발생되는 에칭 폐액, 즉 에칭 공정에서 발생한 알루미늄을 다량 함유하고 있는 인산 주성분 에칭 폐액을 정제하여 인산을 재활용할 수 있는 방법에 관한 것이다.
본 발명은 인산을 함유하는 에칭 폐액을 증류하여 인산만을 남기고 증류하는 단계; 희석물질로 희석하는 단계; 나노 필터, 필요에 따라 킬레이트 수지 및 양이온 교환 수지를 통과시켜 통과시켜 고순도의 인산을 제조하는 단계; 및 에칭액으로 재생하는 단계를 포함하는 알루미늄 에칭 폐액의 재생 방법을 제공한다.
본 발명에 의하면, 인산에 포함된 금속 불순물을 효과적으로 제거하여 정제함으로써 고순도 인산을 제조할 수 있다.
알루미늄 에칭 폐액 재생, 공업용 인산 정제, 나노 필터, 킬레이트 수지, 양이온 교환 수지

47. 发明授权

KR101426088B1 세정액 조성물 및 이를 이용한 세정 방법 有权
标题翻译：清洁液体组合物及使用其的清洁方法
公开(公告)号：KR101426088B1
公开(公告)日：2014-08-04
申请号：KR1020080011000
申请日：2008-02-04
申请人： 동우 화인켐 주식회사
发明人： 송선영 , 윤효중 , 김태희
IPC分类号： C11D7/26 , C11D7/36 , C11D11/00
摘要： 본 발명은, 알루미늄 및 구리를 포함하고 있는 배선이 노출되어 있는 표면을 세정하는 세정액에 관한 것으로서, 구체적으로는 알칼리 화합물, 양자성 알킬렌글리콜 모노알킬에테르 화합물, 인산 암모늄염, 당알코올 및 잔량의 물을 포함하는 플랫 패널 디스플레이(FPD) 기판용 세정액 조성물 및 이를 이용한 반도체 디바이스, 액정, PDP 등의 FPD 기판의 세정 방법에 관한 것이다.
세정, FPD, 액정표시소자
摘要翻译：本发明中，作为含有清洗液的铝和铜用于清洁时暴露的表面，具体而言，一种碱性化合物，质子亚烷基二醇单烷基醚化合物，磷酸的铵盐，所述糖醇的水的布线和剩余的以及使用平板显示器（FPD）基板用清洁液组合物的半导体装置，液晶，PDP等的清洁方法。

48. 发明公开

KR1020100125109A 구리용 레지스트 제거용 조성물 无效
标题翻译：铜或铜合金剥离组合物
公开(公告)号：KR1020100125109A
公开(公告)日：2010-11-30
申请号：KR1020090044150
申请日：2009-05-20
申请人： 동우 화인켐 주식회사
发明人： 홍형표 , 홍헌표 , 김태희 , 김병묵
IPC分类号： G03F7/42
CPC分类号： G03F7/425 , C07D213/643 , C07D307/93 , C07D491/048 , C11D3/2068 , C11D11/0047 , G03F7/039
摘要： PURPOSE: A stripper composition for copper or copper alloy is provided to enable applications to a dip method, single wafer method and spray stripping processes and to minimize the corrosion of an insulating layer without isopropanol. CONSTITUTION: A stripper composition for copper or copper alloy comprises (A) 0.1-30 weight% cyclic compound represented by chemical formula 1 or 2, and (B) the remaining amount of organic solvents. In chemical formula 1 and 2, R1, R2 and R4 are independently hydrogen, C1~C10 linear or branched alkyl group, C6~C10 aryl group, and C1~C10 linear or branched alkylamino group; R3 and R5 are hydrogen, C1~C10 linear or branched alkyl group, C6~C10 aryl group, and C1~C10 linear or branched alkylamino group or amino group; X1 is C, S, O or N; n1 is an integer of 1 or 2; and n2 is an integer of 1-4.
摘要翻译：目的：提供用于铜或铜合金的脱模剂组合物，以使应用于浸渍法，单晶法和喷雾剥离工艺，并且使不含异丙醇的绝缘层的腐蚀最小化。构成：铜或铜合金的剥离剂组合物包含（A）0.1-30重量％的由化学式1或2表示的环状化合物，和（B）剩余量的有机溶剂。在化学式1和化学式2中，R 1，R 2和R 4独立地为氢，C 1〜C 10直链或支链烷基，C 6〜C 10芳基，C 1〜C 10直链或支链烷基氨基; R3和R5是氢，C1〜C10直链或支链烷基，C6〜C10芳基和C1〜C10直链或支链烷基氨基或氨基; X1为C，S，O或N; n1为1或2的整数; n2为1-4的整数。

49. 发明公开

KR1020100011472A 구리용 레지스트 제거용 조성물 无效
标题翻译：可兼容的电阻去除组合物
公开(公告)号：KR1020100011472A
公开(公告)日：2010-02-03
申请号：KR1020080072706
申请日：2008-07-25
申请人： 동우 화인켐 주식회사
发明人： 홍헌표 , 홍형표 , 김병묵 , 김태희
IPC分类号： G03F7/34 , G03F7/42
CPC分类号： G03F7/425 , C08F220/22 , C11D3/2068 , C11D11/0047 , G03F7/004 , G03F7/422
摘要： PURPOSE: A Cu-compatible resist removing composition is provided to be applied to a dip type, single type, and spray type stripping processes and to remove a photoresist film hardened by severe photolithography and wet etch processes in a short time. CONSTITUTION: A Cu-compatible resist removing composition comprises (A) 1-10 weight% tertiary alkanolamine represented by chemical formula 1, (B) the remaining amount of solvent including an amide functional group represented by chemical formula 2, and (C) 0.1-5 weight% additive including an azole compound and hydroxy benzene compound. In chemical formulae 1 and 2, R1 and R2 are independently C1-6 alkyl group, C1-6 hydroxy alkyl group or C1-6 amino alkyl group.
摘要翻译：目的：提供Cu兼容的抗蚀剂去除组合物以适用于浸渍型，单一型和喷雾型剥离工艺，并在短时间内除去通过严格光刻和湿法蚀刻工艺硬化的光致抗蚀剂膜。构成：Cu兼容的抗蚀剂去除组合物包含（A）1-10重量％的由化学式1表示的叔链烷醇胺，（B）包括由化学式2表示的酰胺官能团的溶剂的剩余量和（C）0.1 -5重量％的添加剂，包括唑类化合物和羟基苯化合物。在化学式1和2中，R 1和R 2独立地为C 1-6烷基，C 1-6羟基烷基或C 1-6氨基烷基。

50. 发明公开

KR1020090114073A 세정액 조성물 및 이를 이용한 기판의 세정 방법 无效
标题翻译：清洁溶液组合物和使用其清洁面板的方法
公开(公告)号：KR1020090114073A
公开(公告)日：2009-11-03
申请号：KR1020080039844
申请日：2008-04-29
申请人： 동우 화인켐 주식회사
发明人： 송선영 , 윤효중 , 김태희
IPC分类号： C11D1/72 , C11D1/68
CPC分类号： C11D7/26 , C11D3/0047 , C11D7/263 , C11D7/265 , C11D7/329 , C11D7/5022 , G02F1/136
摘要： PURPOSE: A cleaning solution composition is provided to ensure excellent cleaning strength when removing organic pollutants or particles on a substrate, and good corrosion resistance of metal wiring which is formed on the substrate. CONSTITUTION: A cleaning solution composition comprises alkanol amine 0.01-5 weight% and mono, di, or tri-alkyleneglycol monalkylether 0.05-50 weight%, HO-R1-(OR2)n-OH 0.05-30 weight% (wherein R1 and R2 are independently C2~C5 alkylene and n is 0 or 1), polycarboxylate 0.01-10 weight%, and water 5~99.88 weight%. The polycarboxylate comprises one or more cation selected from the group consisting of ammonium, sodium, and potassium.
摘要翻译：目的：提供清洁溶液组合物，以在去除基材上的有机污染物或颗粒时具有优异的清洁强度，并且在基材上形成的金属布线具有良好的耐腐蚀性。构成：清洁溶液组合物包含0.01-5重量％的链烷醇胺和0.05-0.50重量％的单，二或三亚烷基二醇单烷基醚0.05-50重量％的HO-R1-（OR2）n-OH（其中R1和R2 独立地为C 2〜C 5亚烷基，n为0或1），聚羧酸盐为0.01〜10重量％，水为5〜99.88重量％。多羧酸盐包含一种或多种选自铵，钠和钾的阳离子。

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