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    • 47. 发明授权
    • High throughput electron beam lithography system
    • 高通量电子束光刻系统
    • US6014200A
    • 2000-01-11
    • US28721
    • 1998-02-24
    • Michael R. SogardJohn McCoy
    • Michael R. SogardJohn McCoy
    • H01J37/09G03F7/20H01J37/147H01J37/305H01J37/317H01L21/027G03B27/42G03B27/54A61N5/00
    • H01J37/3174B82Y10/00B82Y40/00H01J37/3177H01J2237/31776
    • An electron beam lithography system having a beamlet shaping section that includes a first multi-aperture array having m rows and n columns of apertures having a first shape and a second multi-aperture array with m rows and n columns of apertures having a second shape. Electron beamlets formed by the first multi-aperture array are deflected by a deflector unit before passing through the second multi-aperture array. The superposition of the electron beamlets on the second multi-aperture produces electron beamlets having a selected shape. Deflection logic on an active beam aperture array blank selected electron beamlets. The deflection logic can be updated with the next logic pattern as the current logic pattern is being executed. The unblanked electron beamlets are directed onto a surface to be exposed. The deflection logic on the active beam aperture array, and the multi-aperture arrays, are shielded from electrons and x-rays generated by the electrons striking surfaces within the electron beam lithography system. Sensitive deflection logic is radiation hardened to prevent degradation.
    • 一种具有子束成形部分的电子束光刻系统,该子束成形部分包括具有m行和n列的具有第一形状的孔的第一多孔径阵列和具有m行和n列的具有第二形状的孔的第二多孔径阵列。 由第一多孔径阵列形成的电子束由穿过第二多孔径阵列之前的偏转器单元偏转。 电子束在第二多孔上的叠加产生具有选定形状的电子束。 有源光束孔径阵列上的偏转逻辑选择电子束。 随着当前逻辑模式正在执行,偏转逻辑可以用下一个逻辑模式进行更新。 未钝化的电子子束被引导到待暴露的表面上。 有源光束孔径阵列和多孔径阵列上的偏转逻辑与电子束光刻系统内的电子撞击表面产生的电子和x射线屏蔽。 敏感偏转逻辑是辐射硬化以防止退化。