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    • 43. 发明申请
    • Liquid ejection head and method of producing the same
    • 液体喷射头及其制造方法
    • US20050185020A1
    • 2005-08-25
    • US11061575
    • 2005-02-22
    • Toshiaki FukunagaYasuhisa Kaneko
    • Toshiaki FukunagaYasuhisa Kaneko
    • B41J2/06B41J2/04
    • B41J2/06
    • The liquid ejection head ejects droplets by causing an electrostatic force to act on a solution in which charged particles are dispersed. The head includes a solution guide mounted at a position corresponding to a through-hole on a first surface of an insulating head substrate on a through-hole substrate side and gradually narrowing toward a tip end portion, the tip end portion thereof passing through and protruding from the through-hole, a control electrode provided on the first surface of the head substrate so that a center thereof approximately coincides with the solution guide, a electrode drawing portion connected to the control electrode and passing through the head substrate and a wiring portion provided on a second surface being a back side of the head substrate and connecting to each other the electrode drawing portion and means for applying a voltage to the control electrode.
    • 液体喷射头通过使静电力作用在分散带电粒子的溶液中而喷射液滴。 头部包括:溶液引导件,其安装在通孔基板侧的绝缘头基板的第一表面上的与通孔对应的位置,并朝向前端部逐渐变窄,前端部通过并突出 所述通孔设置在所述头基板的所述第一表面上,使得其中心与所述溶液引导件大致重合的控制电极,连接到所述控制电极并穿过所述头基板的电极引出部分和设置在所述控制电极上的布线部分 在作为头基板背面的第二表面上并且彼此连接的电极拉伸部分和用于向控制电极施加电压的装置。
    • 44. 发明授权
    • Short turn-off time photoconductive switch
    • 短关断时间光导开关
    • US06403990B1
    • 2002-06-11
    • US09819101
    • 2001-03-27
    • Yasuhisa KanekoMitsuchika SaitoChristopher Kocot
    • Yasuhisa KanekoMitsuchika SaitoChristopher Kocot
    • H01L31109
    • H01L31/109
    • The photoconductive switch comprises a first confinement layer, a second confinement layer, a photoconductive layer that includes a doped sub-layer and an undoped sub-layer, a first electrode and a second electrode. The first confinement layer is a layer of a first semiconductor material having a first band-gap energy and a first conductivity type. The second confinement layer is a layer of a second semiconductor material having a second band-gap energy. The photoconductive layer is a layer of a third semiconductor material having a third band-gap energy and a second conductivity type, opposite to the first conductivity type. The photoconductive layer is sandwiched between the first confinement layer and the second confinement layer, and the third band-gap energy is less than the first and second band-gap energies. In the photoconductive layer, the doped sub-layer is in contact with the first confinement layer, and the undoped sub-layer is adjacent the second confinement layer. The first electrode and the second electrode are separate from each other and are located on the surface of the first confinement layer remote from the photoconductive layer.
    • 光导开关包括第一限制层,第二限制层,包括掺杂子层和未掺杂子层的光电导层,第一电极和第二电极。 第一限制层是具有第一带隙能和第一导电类型的第一半导体材料的层。 第二限制层是具有第二带隙能量的第二半导体材料层。 光电导层是具有与第一导电类型相反的第三带隙能和第二导电类型的第三半导体材料的层。 光电导层夹在第一限制层和第二限制层之间,第三带隙能量小于第一和第二带隙能量。 在光电导层中,掺杂子层与第一限制层接触,未掺杂的子层与第二限制层相邻。 第一电极和第二电极彼此分离并且位于远离光电导层的第一限制层的表面上。
    • 45. 发明授权
    • Photo-conductive switch having an improved semiconductor structure
    • 具有改进的半导体结构的光电导体开关
    • US06252221B1
    • 2001-06-26
    • US09337045
    • 1999-06-21
    • Yasuhisa KanekoMitsuchika SaitoThomas S. Low
    • Yasuhisa KanekoMitsuchika SaitoThomas S. Low
    • H01J4014
    • B82Y20/00H01L31/035236H01L31/08
    • A PCS that comprises a photo-conductive layer of NB material sandwiched between a top confinement layer and a bottom confinement layer. Both confinement layers are layers of WB material. NB material and WB material are semiconductor materials. NB material has a smaller band-gap energy than WB material. The top confinement layer and the photo-conductive layer have opposite conductivity types. A first electrode and a second electrode, separated from each other by a gap and are located on the surface of the top confinement layer remote from the photo-conductive layer. The photo-conductive layer provides a low-resistance conduction path between the electrodes when the photo-conductive layer is illuminated with incident light of an appropriate wavelength and intensity.
    • 一种PCS,其包含夹在顶部限制层和底部约束层之间的NB材料的导电层。 两个限制层都是WB材料层。 NB材料和WB材料是半导体材料。 NB材料具有比WB材料更小的带隙能量。 顶部限制层和光导层具有相反的导电类型。 第一电极和第二电极,通过间隙彼此分开并且位于顶部限制层的远离光导层的表面上。 当用适当波长和强度的入射光照射光导层时,光电导层在电极之间提供低电阻传导路径。
    • 49. 发明申请
    • RADIOLOGICAL IMAGE DETECTION APPARATUS
    • 放射图像检测装置
    • US20120193544A1
    • 2012-08-02
    • US13339012
    • 2011-12-28
    • Yasuhisa KANEKOHaruyasu NAKATSUGAWA
    • Yasuhisa KANEKOHaruyasu NAKATSUGAWA
    • G01T1/20
    • H01L27/14676G01T1/20G01T1/2018H01L27/308H01L51/0078H01L51/0094
    • A radiological image detection apparatus includes: a substrate in which a recess portion having a bottom portion including at least the whole of a radiological imaging region is formed; a phosphor which contains a fluorescent material emitting fluorescence when exposed to radiation and which is provided in the recess portion of the substrate; a group of photoelectric conversion elements which are provided on an opposite side to the recess portion provided with the phosphor and which photoelectrically convert the fluorescence emitted from the phosphor; a support which supports the phosphor; and a fixing portion which fixes the support and the substrate. The photoelectric conversion elements, the substrate, the phosphor and the support are arranged in ascending order of distance from a radiation entrance side.
    • 放射线图像检测装置包括:基底,其中形成具有至少整个放射线成像区域的底部的凹部; 荧光体,其含有当暴露于辐射时发射荧光并且设置在基板的凹部中的荧光材料; 一组光电转换元件,设置在与设置有荧光体的凹部相对的一侧,并对从荧光体发出的荧光进行光电转换; 支撑磷光体的支撑体; 以及固定所述支撑体和所述基板的固定部。 光电转换元件,基板,荧光体和支撑体以从辐射入射侧的距离的升序排列。