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41. 发明申请

US20170218010A1 METHOD FOR PEPTIDE SYNTHESIS AND APPARATUS FOR CARRYING OUT A METHOD FOR SOLID PHASE SYNTHESIS OF PEPTIDES 审中-公开
公开(公告)号：US20170218010A1
公开(公告)日：2017-08-03
申请号：US15514833
申请日：2015-09-29
申请人： TECHNISCHE UNIVERSITÄT DARMSTADT
发明人： Sascha KNAUER , Tobias Michael Louis ROESE , Olga AVRUTINA , Harald KOLMAR , Christina UTH
IPC分类号： C07K1/04 , C07K1/10 , C07K1/06 , C07K1/02
CPC分类号： C07K1/04 , C07K1/02 , C07K1/063 , C07K1/064 , C07K1/10 , Y02P20/55
摘要： The invention relates to a method for peptide synthesis, wherein said method comprises the steps of reacting a first amino acid or a first peptide with an α-amine protected second amino acid in a solvent selected from the group consisting of water, alcohol, and a mixture of water and alcohol, and removing the α-amine protecting group with a deprotecting solution. The invention further relates to protective agents, their use and an apparatus for carrying out a method for solid phase synthesis of peptides.

42. 发明申请

US20160218212A1 FIELD EFFECT TRANSISTOR ARRANGEMENT 审中-公开
标题翻译：场效应晶体管布置
公开(公告)号：US20160218212A1
公开(公告)日：2016-07-28
申请号：US14900704
申请日：2014-06-25
申请人： TECHNISCHE UNIVERSITÄT DARMSTADT
发明人： Udo SCHWALKE , Frank WESSELY , Tilmann KRAUSS
IPC分类号： H01L29/78 , H01L29/06 , H01L29/40
CPC分类号： H01L29/7838 , H01L29/0649 , H01L29/404 , H01L29/7839 , H01L29/78645 , H01L29/78648 , H01L29/78654
摘要： A field effect transistor arrangement having as planar channel layer comprises semiconductor material, the whole surface of the underside of the layer being applied to an upper side of an electrically insulating substrate layer and the upper side of the planar channel layer being covered by an insulation layer. The arrangement has a source electrode on a first side edge of the channel layer and a drain electrode on a second side edge of the channel layer and a control electrode arranged above the channel layer. An adjusting electrode is arranged on an underside of the substrate layer. A contact region between the source and drain electrodes and the planar channel layer is in each case configured as a midgap Schottky barrier. A respective barrier control electrode is arranged in the vicinity of the contact region of the source electrode and of the drain electrode, Each barrier control electrode can have a section that projects outwards in the direction of the planar channel layer.
摘要翻译：具有平面沟道层的场效应晶体管布置包括半导体材料，该层的下侧的整个表面被施加到电绝缘基底层的上侧，并且平面通道层的上侧被绝缘层覆盖。该布置在沟道层的第一侧边缘上具有源电极，在沟道层的第二侧边缘上具有漏电极，以及布置在沟道层上方的控制电极。调整电极设置在基底层的下侧。源电极和漏电极之间的接触区域和平面沟道层在每种情况下被配置为中隙肖特基势垒。各栅极控制电极配置在源电极和漏电极的接触区域附近。每个势垒控制电极可以具有在平面沟道层的方向上向外突出的部分。

43. 发明申请

US20140165381A1 Method for producing a housing structure at least partially enclosing at least one component and housing structure produced by said method 有权
标题翻译：用于制造至少部分地包围由所述方法产生的至少一个部件和壳体结构的壳体结构的方法
公开(公告)号：US20140165381A1
公开(公告)日：2014-06-19
申请号：US14127986
申请日：2012-06-21
申请人： TECHNISCHE UNIVERSITÄT DARMSTADT , FRAUNHOFER-GESELLSCHAFT zur Förderung der angewandten Forschung e.V.
发明人： Matthias Rauschenbach , David Flaschentraeger , Tobias Melz , Eberhard Abele , Jakob Fischer , Hanns Stoffregen
IPC分类号： H05K13/00
CPC分类号： H05K13/00 , B22F3/1055 , B29C64/153 , B29C67/0077 , B29C70/70 , H01L41/0536 , H01L41/23 , H01L41/257 , Y02P10/295 , Y10T29/49002
摘要： A method for producing a housing structure at least partially enclosing at least one component, wherein the housing structure is produced with a construction process utilizing at least one of repeated layered deposition and solidification of material, which is interrupted at least once before completion of the housing structure, and during at least one interruption at least one component, which is not produced by the construction process, is joined to or disposed in a partially finished housing structure, and the construction process is then continued after the interruption until the housing is completed, wherein at least one of an actuator and sensor comprising at least partially a transformer material selected as the at least one component to be joined to or disposed in the housing structure.
摘要翻译：一种用于制造至少部分地包围至少一个部件的壳体结构的方法，其中所述壳体结构利用施加工艺生产，所述构造工艺利用重复分层沉积和材料固化中的至少一种，其在壳体完成之前中断至少一次并且在至少一个中断期间，不是由施工过程产生的至少一个部件被连接到或设置在部分成型的壳体结构中，然后在中断之后继续施工过程直到壳体完成，其中致动器和传感器中的至少一个至少部分地包括被选择为要连接到或设置在壳体结构中的至少一个部件的变压器材料。

44. 发明授权

US12127490B2 Gunn diode and method of manufacturing the same 有权
公开(公告)号：US12127490B2
公开(公告)日：2024-10-22
申请号：US17762775
申请日：2020-09-24
申请人： Technische Universität Darmstadt
发明人： Oktay Yilmazoglu , Ahid S. Hajo
IPC分类号： H10N80/10 , H10N80/00
CPC分类号： H10N80/107 , H10N80/01
摘要： A Gunn diode is disclosed which comprises a first contact layer, a second contact layer, and an active layer based on a gallium nitride (GaN) semiconductor material having a base surface and a side surface non-parallel thereto. Optionally, related materials such as aluminum indium gallium nitride (AlInGaN) materials may also be used as the active layer. The first contact layer electrically contacts the side surface to form a side contact. The second contact layer forms an electrical contact for the base surface, so that a maximum of the electric field strength is formed when an electric voltage is applied between the first contact layer and the second contact layer at the side contact.

45. 发明公开

US20240247718A1 GEARSHIFT WITH MOVING MAGNET ACTUATOR 审中-公开
公开(公告)号：US20240247718A1
公开(公告)日：2024-07-25
申请号：US18561335
申请日：2022-05-19
申请人： TECHNISCHE UNIVERSITÄT DARMSTADT
发明人： Daniel Schöneberger , Oliver Hahn , Daniel Franz
IPC分类号： F16H63/38 , F16H63/30
CPC分类号： F16H63/38 , F16H2063/305 , F16H2200/0021
摘要： A gearshift for an electric drive includes a housing having a depressed portion with an opening through which a movable component is led. Further, the gearshift for the electric drive includes at least one moving magnet actuator. The at least one moving magnet actuator is configured to move the component and mounted in the depressed portion.

46. 发明公开

US20240186793A1 INTERMEDIATE POWER STORE FOR POWER GENERATING SYSTEMS 审中-公开
公开(公告)号：US20240186793A1
公开(公告)日：2024-06-06
申请号：US18283869
申请日：2022-03-21
申请人： TECHNISCHE UNIVERSITÄT DARMSTADT
发明人： Falah Alobaid , Pascal Koschwitz , Bernd Epple
IPC分类号： H02J3/38 , B01D61/02 , B01D61/06 , B01D61/08 , B01D61/12 , F03G7/00 , H02K7/18 , H02S10/12
CPC分类号： H02J3/38 , B01D61/025 , B01D61/06 , B01D61/08 , B01D61/12 , F03G7/015 , H02K7/183 , H02S10/12 , B01D2313/243 , B01D2313/246 , B01D2313/501 , B01D2313/502 , H02J2300/24 , H02J2300/28
摘要： An intermediate power store for at least one power generating system, including: an osmosis device, a permeate store, a concentrate store and a control device. The osmosis device is designed to separate, in a charging operation, a liquid mixture with a charging pressure into a permeate and a concentrate, or, in a discharging operation, to mix the permeate with the concentrate while applying an osmotic pressure to the liquid mixture. The permeate store is fluidically connected to the osmosis device and is designed to store the permeate. The concentrate store is fluidically connected to the osmosis device and is designed to store the concentrate. The control device is designed to control the following functions: the charging operation using electrical power from the at least one power generating system, or the discharging operation while providing electrical power.

47. 发明公开

US20240092700A1 METHOD FOR PRECIPITATION HARDENING OF A PIEZOCERAMIC, AND PIEZOCERAMIC 审中-公开
公开(公告)号：US20240092700A1
公开(公告)日：2024-03-21
申请号：US18546565
申请日：2023-03-17
申请人： TECHNISCHE UNIVERSITÄT DARMSTADT
发明人： Jürgen RÖDEL , Jurij KORUZA , Changhao ZHAO
IPC分类号： C04B41/00 , C04B41/80 , H10N30/853
CPC分类号： C04B41/0072 , C04B41/80 , H10N30/853
摘要： The present invention relates to a method for precipitation hardening of a piezoceramic and to a piezoceramic.

48. 发明公开

US20230330919A1 APPARATUS AND METHOD FOR ADDITIVE MANUFACTURING OF HETEROGENEOUS STRUCTURE 审中-公开
公开(公告)号：US20230330919A1
公开(公告)日：2023-10-19
申请号：US18027083
申请日：2021-09-07
申请人： Technische Universität Darmstadt
发明人： Eckhard KIRCHNER , Kay-Eric STEFFAN , Tim Martin MÜLLER
IPC分类号： B29C64/118 , B29C64/209 , B29C64/188 , B29C64/236 , B29C64/241
CPC分类号： B29C64/118 , B29C64/209 , B29C64/188 , B29C64/236 , B29C64/241 , B33Y30/00
摘要： An apparatus for additively manufacturing a heterogeneous structure (50) using a plastic fiber (10) and an energy transfer material (20) is disclosed. Additive manufacturing is performed in a vertical direction (z) perpendicular to a horizontal plane (x-y). The apparatus comprises: a nozzle device (110) adapted to provide the plastic fiber (10) for additive manufacturing; a feeding device (120) adapted to move the energy transfer material (20) back and forth in a vertical direction (z); and moving device (130) adapted to independently move (or rotate) the feeding device (120) and the nozzle device (110) in the horizontal plane (x-y) to fabricate the heterogeneous structure (50) in the horizontal plane (x-y).

49. 发明授权

US11762111B2 Macropixel and macropixel-based particle and radiation detector 有权
公开(公告)号：US11762111B2
公开(公告)日：2023-09-19
申请号：US17625402
申请日：2020-07-07
申请人： Technische Universität Darmstadt
发明人： Markus Hesse , Tina Ebert , Gabriel Schaumann , Markus Roth
IPC分类号： G01T1/29
CPC分类号： G01T1/2914
摘要： An arrangement for determining an energy spectrum of a beam of radiation or particles is disclosed. The arrangement comprises a plurality of polymeric bodies. Each of the plurality of polymeric bodies includes an optical waveguide. Each of the plurality of polymeric bodies has a scintillator disposed at a respective end of the optical waveguide. The scintillators are arranged relative to each other such that an energy resolution of a particle beam incident on the arrangement can be determined. Furthermore, a particle detector with the arrangement and an evaluation unit for reading out the particle detector are disclosed.

50. 发明公开

US20230268450A1 PHOTOCONDUCTING LAYERED MATERIAL ARRANGEMENT, METHOD OF FABRICATING THE PHOTOCONDUCTING LAYERED MATERIAL ARRANGEMENT, AND USE OF THE PHOTOCONDUCTING LAYERED MATERIAL ARRANGEMENT 审中-公开
公开(公告)号：US20230268450A1
公开(公告)日：2023-08-24
申请号：US18138777
申请日：2023-04-25
申请人： Technische Universität Darmstadt
发明人： Sascha Preu , Arthur C. Gossard , Christopher J. Palmstrom , Hong Lu
IPC分类号： H01L31/0304 , H01L31/08 , H01S5/30
CPC分类号： H01L31/03046 , H01L31/03042 , H01L31/08 , H01S5/3013 , Y02E10/544 , Y02P70/50
摘要： A photoconducting layered material arrangement for producing or detecting high frequency radiation includes a semiconductor material including an alloy comprised of InGaAs, InGaAsSb, or GaSb, with an admixture of Al, which material is applied to a suitable support substrate in a manner such that the lattices are suitably adjusted, wherewith the semiconductor material comprised of InGaAlAs, InGaAlAsSb, or GaAlSb has a band gap of more than 1 eV, as a consequence of the admixed proportion of Al. The proportion x of Al in the semiconductor material InyGa1-y-xAlxAs is between x=0.2 and x=0.35, wherewith the proportion y of In may be between 0.5 and 0.55. The support substrate is InP or GaAs.

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