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41. 发明申请

US20060157775A1 Byte-operational nonvolatile semiconductor memory device 审中-公开
公开(公告)号：US20060157775A1
公开(公告)日：2006-07-20
申请号：US11378295
申请日：2006-03-20
申请人： Sung-ho Kim , Nae-in Lee , Kwang-wook Koh , Geum-jong Bae , Ki-chul Kim , Jin-hee Kim , In-wook Cho , Sang-su Kim
发明人： Sung-ho Kim , Nae-in Lee , Kwang-wook Koh , Geum-jong Bae , Ki-chul Kim , Jin-hee Kim , In-wook Cho , Sang-su Kim
IPC分类号： H01L29/788
CPC分类号： H01L27/11568 , G11C16/0416 , G11C16/0466 , H01L27/0207 , H01L27/115 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L29/40114 , H01L29/40117 , H01L29/66825 , H01L29/66833 , H01L29/792
摘要： Byte-operational nonvolatile semiconductor memory devices are capable of erasing stored data one byte at a time. A byte memory cell may include a memory cell array of 1-byte memory transistors. The 1-byte memory transistors may be arranged in one direction, each including a junction region and a channel region formed in an active region. A byte memory cell may include a byte select transistor. The select transistor may be disposed in the active region and including a junction region that is directly adjacent to a junction of each of the 1-byte memory transistors. The byte select transistor may be disposed over or under the 1-byte memory transistors perpendicular to the arranged direction of the 1-byte memory transistors.

42. 发明授权

US07045850B2 Semiconductor device with floating trap type nonvolatile memory cell and method for manufacturing the same 有权
标题翻译：具有浮动阱式非易失性存储单元的半导体器件及其制造方法
公开(公告)号：US07045850B2
公开(公告)日：2006-05-16
申请号：US10844783
申请日：2004-05-13
申请人： Sang-Su Kim , Kwang-Wook Koh , Geum-Jong Bae , Ki-Chul Kim , Sung-Ho Kim , Jin-Hee Kim , In-Wook Cho
发明人： Sang-Su Kim , Kwang-Wook Koh , Geum-Jong Bae , Ki-Chul Kim , Sung-Ho Kim , Jin-Hee Kim , In-Wook Cho
IPC分类号： H01L29/76
CPC分类号： H01L27/11568 , H01L21/823462 , H01L27/105 , H01L27/115 , H01L27/11526 , H01L27/11546
摘要： The present invention discloses a semiconductor device having a floating trap type nonvolatile memory cell and a method for manufacturing the same. The method includes providing a semiconductor substrate having a nonvolatile memory region, a first region, and a second region. A triple layer composed of a tunnel oxide layer, a charge storing layer and a first deposited oxide layer on the semiconductor substrate is formed sequentially The triple layer on the semiconductor substrate except the nonvolatile memory region is then removed. A second deposited oxide layer is formed on an entire surface of the semiconductor substrate including the first and second regions from which the triple layer is removed. The second deposited oxide layer on the second region is removed, and a first thermal oxide layer is formed on the entire surface of the semiconductor substrate including the second region from which the second deposited oxide layer is removed. The semiconductor device can be manufactured according to the present invention to have a reduced processing time and a reduced change of impurity doping profile. The thickness of a blocking oxide layer and a high voltage gate oxide layer can be controlled.
摘要翻译：本发明公开了一种具有浮动阱式非易失性存储单元的半导体器件及其制造方法。该方法包括提供具有非易失性存储区域，第一区域和第二区域的半导体衬底。依次形成由半导体衬底上的隧道氧化物层，电荷存储层和第一沉积氧化物层构成的三层，然后除去非易失性存储区域之外的半导体衬底上的三层。第二沉积氧化物层形成在半导体衬底的包括去除三层的第一和第二区域的整个表面上。去除第二区域上的第二沉积氧化物层，并且在包括除去第二沉积氧化物层的第二区域的半导体衬底的整个表面上形成第一热氧化物层。可以根据本发明制造半导体器件以减少处理时间和降低杂质掺杂分布的变化。可以控制阻挡氧化物层和高电压栅极氧化物层的厚度。

43. 发明申请

US20050186734A1 Method of manufacturing a non-volatile semiconductor memory device 有权
标题翻译：制造非易失性半导体存储器件的方法
公开(公告)号：US20050186734A1
公开(公告)日：2005-08-25
申请号：US10786239
申请日：2004-02-24
申请人： In-Wook Cho , Nae-In Lee , Kwang-Wook Koh , Geun-Jong Bae , Sang-Su Kim , Jin-Hee Kim , Sung-Ho Kim , Ki-Chul Kim
发明人： In-Wook Cho , Nae-In Lee , Kwang-Wook Koh , Geun-Jong Bae , Sang-Su Kim , Jin-Hee Kim , Sung-Ho Kim , Ki-Chul Kim
IPC分类号： H01L27/10 , H01L21/336 , H01L21/8246 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/115 , H01L27/11568 , Y10S438/954
摘要： A method of manufacturing a non-volatile semiconductor memory device begins by forming a dielectric layer pattern having an ONO composition on a substrate. A polysilicon layer is formed on the substrate including over the dielectric layer pattern. The polysilicon layer is patterned to form a split polysilicon layer pattern that exposes part of the dielectric layer pattern. The exposed dielectric layer is etched, and then impurities are implanted into portions of the substrate using the split polysilicon layer pattern as a mask to thereby form a source region having a vertical profile in the substrate.
摘要翻译：制造非易失性半导体存储器件的方法是通过在衬底上形成具有ONO组成的电介质层图案而开始的。在包括在电介质层图案上的衬底上形成多晶硅层。图案化多晶硅层以形成暴露部分介电层图案的分裂多晶硅层图案。暴露的电介质层被蚀刻，然后使用分离多晶硅层图案作为掩模将杂质注入到衬底的部分中，从而在衬底中形成具有垂直轮廓的源区。

44. 发明申请

US20050048702A1 Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same 失效
标题翻译：具有两片门和自对准ONO的本地SONOS型结构及其制造方法
公开(公告)号：US20050048702A1
公开(公告)日：2005-03-03
申请号：US10953553
申请日：2004-09-30
申请人： Geum-Jong Bae , Nae-In Lee , Sang Kim , Ki Kim , Jin-Hee Kim , In-Wook Cho , Sung-Ho Kim , Kwang-Wook Koh
发明人： Geum-Jong Bae , Nae-In Lee , Sang Kim , Ki Kim , Jin-Hee Kim , In-Wook Cho , Sung-Ho Kim , Kwang-Wook Koh
IPC分类号： H01L21/8246 , H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792 , H01L21/335
CPC分类号： H01L29/792 , H01L29/7923 , Y10S438/954
摘要： A local SONOS structure having a two-piece gate and a self-aligned ONO structure includes: a substrate; an ONO structure on the substrate; a first gate layer on and aligned with the ONO structure; a gate insulator on the substrate aside the ONO structure; and a second gate layer on the first gate layer and on the gate insulator. The first and second gate layers are electrically connected together. Together, the ONO structure and first and second gate layers define at least a 1-bit local SONOS structure. A corresponding method of manufacture includes: providing a substrate; forming an ONO structure on the substrate; forming a first gate layer on and aligned with the ONO structure; forming a gate insulator on the substrate aside the ONO structure; forming a second gate layer on the first gate layer and on the gate insulator; and electrically connecting the first and second gate layers.
摘要翻译：具有两件式门和自对准ONO结构的本地SONOS结构包括：衬底; 基底上的ONO结构; 在ONO结构上并与ONO结构对准的第一栅极层; 衬底上的栅极绝缘体旁边的ONO结构; 以及在第一栅极层上和栅极绝缘体上的第二栅极层。第一和第二栅极层电连接在一起。 ONO结构和第一和第二栅极层一起定义至少1位本地SONOS结构。相应的制造方法包括：提供衬底; 在基板上形成ONO结构; 在ONO结构上形成第一栅极层并与其结合; 在衬底上形成栅极绝缘体，除了ONO结构; 在第一栅极层和栅极绝缘体上形成第二栅极层; 并且电连接第一和第二栅极层。

45. 发明申请

US20050000667A1 Printing paper and method of manufacturing the same 审中-公开
标题翻译：印刷纸及其制造方法
公开(公告)号：US20050000667A1
公开(公告)日：2005-01-06
申请号：US10487683
申请日：2003-07-16
申请人： Sung-Ho Kim
发明人： Sung-Ho Kim
IPC分类号： B31D1/02 , B32B7/12 , B32B27/10 , B41M5/50 , B41M5/52 , B42D15/00 , D21H19/00
CPC分类号： B32B7/12 , B31D1/02 , B32B27/10 , B32B27/36 , B32B2255/12 , B32B2255/26 , B32B2307/75 , B32B2317/12 , B32B2367/00 , B41M5/504 , B42D15/00
摘要： Disclosed is a printing paper comprising a back surface thereof applied with a repositionable adhesive, adhered to a coated surface of a PET sheet paper, which can be freely repositioned and printed at high resolution up to 2800 dpi even by ink-jet printers as well as laser printers. Thus, the printing paper is variously utilized for reports, color-printed paper and public information paper. In particular, the printing paper for use in public information paper. In particular, the printing paper for use in public information paper or guide paper can be attached to any surface in a typical office, and separated therefrom, and again attached to other surfaces. A method of manufacturing be printing paper is also provided.
摘要翻译：公开了一种打印纸，其包括其后表面，其具有可重新定位的粘合剂，粘附到PET片材的涂布表面上，即使通过喷墨打印机也可以以高分辨率直接喷射到2800dpi，并且可以自动重新定位和打印激光打印机。因此，报纸，彩色印刷纸和公共信息纸被不同地使用。特别是用于公共信息纸的印刷纸。特别地，用于公共信息纸或引导纸的打印纸可以附接到典型办公室中的任何表面，并且与其分离，并且再次附接到其他表面。还提供了一种制造印刷纸的方法。

46. 发明授权

US06291356B1 Method for etching silicon oxynitride and dielectric antireflection coatings 失效
标题翻译：蚀刻氮氧化硅和介电抗反射涂层的方法
公开(公告)号：US06291356B1
公开(公告)日：2001-09-18
申请号：US09317655
申请日：1999-05-24
申请人： Pavel Ionov , Sung Ho Kim , Dean Li , Chun Yan , James Chang Wang
发明人： Pavel Ionov , Sung Ho Kim , Dean Li , Chun Yan , James Chang Wang
IPC分类号： H01L21302
CPC分类号： H01L21/32139 , H01L21/0276 , H01L21/31116 , H01L21/3143
摘要： The present disclosure pertains to a method for plasma etching a semiconductor film stack. The film stack includes at least one layer comprising silicon oxynitride. The method includes etching the silicon oxynitride-comprising layer using an etchant gas mixture comprising chlorine and at least one compound containing fluorine and carbon. The atomic ratio of fluorine to chlorine in the etchant gas ranges between about 3:1 and about 0.01:1; preferably, between about 0.5:1 and about 0.01:1; most preferably, between about 0.25:1 and about 0.1:1. The etchant gas forms a fluorine-comprising polymer or species which deposits on exposed surfaces adjacent to the silicon oxynitride-comprising layer in an amount sufficient to reduce the etch rate of an adjacent material (such as a photoresist) while permitting the etching of the silicon oxynitride-comprising layer.
摘要翻译：本公开涉及用于等离子体蚀刻半导体膜堆叠的方法。薄膜叠层包括至少一层包含氮氧化硅的层。该方法包括使用包含氯和至少一种含氟和碳的化合物的蚀刻剂气体混合物来蚀刻含氧氮化硅层。蚀刻剂气体中氟与氯的原子比范围为约3:1至约0.01:1; 优选约0.5:1至约0.01:1; 最优选在约0.25:1至约0.1:1之间。蚀刻剂气体形成含氟聚合物或物质，它们以足以降低邻近材料（例如光致抗蚀剂）蚀刻速率的量沉积在与含氮氧化硅层相邻的暴露表面上，同时允许蚀刻硅含氧氮化物的层。

47. 发明授权

US09293567B2 Laser crystallization apparatus and method 有权
标题翻译：激光结晶装置及方法
公开(公告)号：US09293567B2
公开(公告)日：2016-03-22
申请号：US13828242
申请日：2013-03-14
申请人： Sung-Ho Kim , Min-Hwan Choi
发明人： Sung-Ho Kim , Min-Hwan Choi
IPC分类号： C30B1/04 , H01L29/66 , H01L21/02 , H01L27/12 , B23K26/06 , B23K26/08
CPC分类号： H01L29/6675 , B23K26/0608 , B23K26/083 , H01L21/02002 , H01L21/02532 , H01L21/02675 , H01L27/1285 , H01L29/66757
摘要： A laser crystallization apparatus includes a laser generator that generates a laser beam, a stage mounted with an object substrate with an object thin film to which the laser beam is firstly incident, the stage is relatively movable such that the laser beam scans the object thin film for crystallization, and a reflection mirror that secondly reflects a second reflection laser beam to the object thin film from a first reflection laser beam that is reflected from the object thin film to the reflection mirror.
摘要翻译：激光结晶装置包括产生激光束的激光发生器，安装有目标基板的载物台，激光束首先入射到该目标薄膜上，所述载物台相对移动，使得激光束扫描物体薄膜以及反射镜，其从从物体薄膜反射到反射镜的第一反射激光束将第二反射激光束二次反射到物体薄膜。

48. 发明授权

US09260053B2 Automotive headlamp system and method of controlling the same 有权
标题翻译：汽车前照灯系统及其控制方法
公开(公告)号：US09260053B2
公开(公告)日：2016-02-16
申请号：US13478618
申请日：2012-05-23
申请人： Jong Ryoul Park , Sung Ho Kim
发明人： Jong Ryoul Park , Sung Ho Kim
IPC分类号： B60Q1/02 , B60Q7/00 , B60Q1/14 , F21S8/10
CPC分类号： B60Q1/143 , B60Q2300/054 , B60Q2300/056 , B60Q2300/42 , F21S41/663
摘要： Disclosed is an automotive headlamp system which can control an illumination pattern of headlamps by rotating a headlamp unit and/or adjusting the light intensity of a light source included in the headlamp unit based on the position of a front vehicle located ahead in a driving direction, and a method of controlling the automotive headlamp system. The automotive headlamp system includes an image capture unit capturing an image of an area ahead of a vehicle in a driving direction of the vehicle, a position determination unit determining a position of a front vehicle based on the captured image, a headlamp unit comprising an array of a plurality of light sources, and a control unit controlling an illumination pattern of the headlamp unit by rotating the headlamp unit and/or adjusting a light intensity of a light source based on the determined position of the front vehicle.
摘要翻译：公开了一种汽车前照灯系统，其可以基于前方车辆在行驶方向上的位置来旋转前照灯单元和/或调整包含在前照灯单元中的光源的光强度来控制前照灯的照明图案，以及一种控制汽车前照灯系统的方法。汽车前照灯系统包括：图像捕获单元，其在车辆的行驶方向上捕获车辆前方的区域的图像;基于拍摄图像确定前方车辆的位置的位置确定单元;包括阵列的前照灯单元以及控制单元，其通过基于前车辆的确定位置旋转前照灯单元和/或调整光源的光强度来控制前照灯单元的照明图案。

49. 发明授权

US09202933B2 Flash memory using fringing effects and electrostatic shielding 有权
标题翻译：闪存使用边缘效果和静电屏蔽
公开(公告)号：US09202933B2
公开(公告)日：2015-12-01
申请号：US13992298
申请日：2011-12-05
申请人： Tae Whan Kim , Joo Hyung You , Sung Ho Kim
发明人： Tae Whan Kim , Joo Hyung You , Sung Ho Kim
IPC分类号： H01L29/792 , H01L27/115 , H01L29/423 , H01L29/66
CPC分类号： H01L29/792 , H01L27/11568 , H01L29/4234 , H01L29/66833
摘要： Disclosed is a flash memory using fringing effects and an electrostatic shielding function. A gap between adjacent gate stacks is controlled by fringing effects, and an operation of each of the gate stacks is electrostatically shielded by a gate electrode extending to a tunneling insulation layer. Thus, coupling between the adjacent gate stacks is minimized by electrostatic shielding.
摘要翻译：公开了一种使用边缘效应和静电屏蔽功能的闪存。相邻栅极堆叠之间的间隙由边缘效应控制，并且每个栅极堆叠的操作被延伸到隧道绝缘层的栅电极静电屏蔽。因此，通过静电屏蔽使相邻栅极叠层之间的耦合最小化。

50. 发明授权

US08941602B2 Display device having touch sensor and method for driving the same 有权
标题翻译：具有触摸传感器的显示装置及其驱动方法
公开(公告)号：US08941602B2
公开(公告)日：2015-01-27
申请号：US13226887
申请日：2011-09-07
申请人： Sung-Chul Kim , Chang-Su Kyeong , Dae-Jin Myoung , Dae-Kyu Yi , Sung-Ho Kim , Seung-Rok Shin
发明人： Sung-Chul Kim , Chang-Su Kyeong , Dae-Jin Myoung , Dae-Kyu Yi , Sung-Ho Kim , Seung-Rok Shin
IPC分类号： G06F3/041 , G06F3/044 , G09G3/36 , G02F1/1333
CPC分类号： G06F3/0418 , G02F1/13338 , G06F3/044 , G09G3/3648 , G09G2300/0434 , G09G2310/08 , G09G2330/06
摘要： The present invention relates to a display device having a touch sensor in which the touch sensor is driven in a period which has a small noise component from the display device to reduce influence from the noise for minimizing a touch error; and a method for driving the same.The display device having a touch sensor includes a display panel, a panel driving unit for driving the display panel, a timing controller for controlling driving timing of the panel driving unit, a touch sensor integrated with the display panel attached thereto or built therein, and a touch controller for driving the touch sensor in a no noise period excluding a period in which the noise is generated periodically from the display panel by using at least one synchronizing signal from the timing controller, and calculating touch coordinates from a signal from the touch sensor and forwarding the touch coordinates.
摘要翻译：本发明涉及一种具有触摸传感器的显示装置，其中触摸传感器在来自显示装置的噪声分量较小的时段内被驱动，以减少噪声对触摸误差的影响; 及其驱动方法。具有触摸传感器的显示装置包括显示面板，用于驱动显示面板的面板驱动单元，用于控制面板驱动单元的驱动定时的定时控制器，与安装在其上或内置的显示面板集成的触摸传感器，以及触摸控制器，用于通过使用来自定时控制器的至少一个同步信号，在不包括周期性地从显示面板产生噪声的周期的无噪声时段内驱动触摸传感器，以及根据来自触摸传感器的信号来计算触摸坐标并转发触摸坐标。

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