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41. 发明专利

GB201106243D0 System and method of transistor switch blasing in a high power semiconductor switch 未知
公开(公告)号：GB201106243D0
公开(公告)日：2011-05-25
申请号：GB201106243
申请日：2011-04-13
申请人： SIGE SEMICONDUCTOR INC
摘要： A system and method are provided for biasing transistor switches in a semiconductor based high power switch. Off-state Vgsd biasing for the off transistor switches is based upon acceptable levels of spurious harmonic emissions and linearity.

42. 发明专利

GB2401737B8 Method of adjusting gain and current consumption of a power amplifier circuit while maintaining linearity 未知
公开(公告)号：GB2401737B8
公开(公告)日：2008-03-10
申请号：GB0419201
申请日：2003-02-28
申请人： SIGE SEMICONDUCTOR INC
发明人： JULIEN MARQUIS CHRISTIAN , WAYNE WALTER
IPC分类号： H03F1/00 , H03F1/02 , H03F1/30 , H03F1/32 , H03G3/00 , H03G3/30
摘要： The gain and current consumption of a power amplifier are adjusted while maintaining amplified output signal linearity. Where linearity and low power consumption are maintained for the amplifier by controllable shunting of an input signal amplitude and by providing a predetermined bias signal to the amplifier circuit in a precalibrated manner. A mapping circuit is disposed for receiving a control signal and for providing the predetermined bias signal to the amplifier circuit in the precalibrated manner. The mapping circuit is either internally provided within the same circuit as the power amplifier, or externally.

43. 发明专利

AT366942T 未知
公开(公告)号：AT366942T
公开(公告)日：2007-08-15
申请号：AT03727048
申请日：2003-05-20
申请人： SIGE SEMICONDUCTOR INC
发明人： FIELDER DENNIS
IPC分类号： G01S19/05 , G01S1/00 , G01S1/04 , G01S19/21

44. 发明专利

GB2401737A Method of adjusting gain and current consumption of a power amplifier circuit while maintaining linearity 未知
公开(公告)号：GB2401737A
公开(公告)日：2004-11-17
申请号：GB0419201
申请日：2003-02-28
申请人： SIGE SEMICONDUCTOR INC
发明人： JULIEN MARQUIS CHRISTIAN , WALTER WAYNE
IPC分类号： H03F1/02 , H03F1/30 , H03F1/32 , H03G3/30 , H03G3/20
摘要： The gain and current consumption of a power amplifier are adjusted while maintaining amplified output signal linearity. Where linearity and low power consumption are maintained for the amplifier by controllable shunting (25, 28) of an output signal amplitude and by providing a predetermined bias signal (18) to the amplifier circuit in a precalibrated manner. A mapping circuit (23) is disposed for receiving a control signal (20) and for providing the predetermined bias signal to the amplifier circuit in the precalibrated manner. The mapping circuit is either internally provided within the same circuit as the power amplifier, or externally.

45. 发明专利

AU2003206598A8 Method of adjusting gain and current consumption of a power amplifier circuit while maintaining linearity 未知
公开(公告)号：AU2003206598A8
公开(公告)日：2003-09-16
申请号：AU2003206598
申请日：2003-02-28
申请人： SIGE SEMICONDUCTOR INC
发明人： WAYNE WALTER , JULIEN MARQUIS CHRISTIAN
IPC分类号： H03F1/02 , H03F1/30 , H03F1/32 , H03G3/30 , H03G3/20
摘要： The gain and current consumption of a power amplifier are adjusted while maintaining amplified output signal linearity. Where linearity and low power consumption are maintained for the amplifier by controllable shunting of an input signal amplitude and by providing a predetermined bias signal to the amplifier circuit in a precalibrated manner. A mapping circuit is disposed for receiving a control signal and for providing the predetermined bias signal to the amplifier circuit in the precalibrated manner. The mapping circuit is either internally provided within the same circuit as the power amplifier, or externally.

46. 发明申请

WO2012003581A1 SYSTEM AND METHOD OF TRANSISTOR SWITCH BIASING IN A HIGH POWER SEMICONDUCTOR SWITCH 审中-公开
标题翻译：高功率半导体开关中晶体管开关偏置的系统与方法
公开(公告)号：WO2012003581A1
公开(公告)日：2012-01-12
申请号：PCT/CA2011/000792
申请日：2011-07-08
申请人： SIGE SEMICONDUCTOR INC. , RAM, Lui (Ray) , FUH, Hanching
发明人： RAM, Lui (Ray) , FUH, Hanching
IPC分类号： H03K17/687 , H03K17/06 , H03K17/10 , H04B7/00
CPC分类号： H03K5/003 , H03K17/693 , H03K2217/0018
摘要： A circuit and method are provided for switching in a semiconductor based high power switch. Complementary p-type based transistors are utilized along insertion loss insensitive paths allowing biasing voltages to alternate between supply and ground, allowing for negative voltage supplies and blocking capacitors to be dispensed with, while improving performance.
摘要翻译：提供了用于切换基于半导体的大功率开关的电路和方法。互补的p型晶体管沿着插入损耗不敏感路径利用，允许偏置电压在电源和地之间交替，从而在提高性能的同时允许负电压供应和阻塞电容器。

47. 发明申请

WO2008025151A1 AN APPARATUS AND METHOD FOR USE IN GLOBAL POSITION MEASUREMENTS 审中-公开
标题翻译：用于全球定位测量的装置和方法
公开(公告)号：WO2008025151A1
公开(公告)日：2008-03-06
申请号：PCT/CA2007/001520
申请日：2007-08-31
申请人： SIGE SEMICONDUCTOR INC. , TARLOW, Ben
发明人： TARLOW, Ben
IPC分类号： G01S5/14
CPC分类号： G01S19/22 , G01S19/13 , G01S19/21
摘要： Apparatus and methods are provided for use in a receiver that receives global positioning data from one or more satellites above the Earth's surface. The apparatus and methods involve detecting a change in at least one parameter associated with the receiver and determining if the change in the at least one parameter is to be treated as erroneous. As a result of determining if the change in the at least one parameter is to be treated as erroneous, a further action may be performed. Determining if the change is to be treated as erroneous may include, for example, detecting changes in more than one parameter and determining if the changes are coincident. Detecting a change in at least one parameter may also enable the receiver to predict the presence and magnitude of multipath components of signals, predict changes in an environment local to the receiver, predict large errors in position estimates determined by the receiver and modify an acquisition and tracking strategy used by the receiver.
摘要翻译：提供的装置和方法用于从地球表面上的一个或多个卫星接收全球定位数据的接收机中。所述装置和方法涉及检测与所述接收机相关联的至少一个参数的改变，并且确定所述至少一个参数中的改变是否被视为是错误的。作为确定至少一个参数的改变是否被视为错误的结果，可以执行进一步的动作。确定改变是否被视为错误可能包括例如检测多个参数中的变化并确定变化是否一致。检测至少一个参数中的变化也可以使得接收机能够预测信号的多路径分量的存在和幅度，预测接收机本地环境中的变化，预测由接收机确定的位置估计中的大误差并修改采集，接收机使用的跟踪策略。

48. 发明申请

WO2006130969A1 DEVICE AND METHODS FOR HIGH ISOLATION AND INTERFERENCE SUPPRESSION SWITCH-FILTER 审中-公开
标题翻译：用于高隔离和干扰抑制开关滤波器的装置和方法
公开(公告)号：WO2006130969A1
公开(公告)日：2006-12-14
申请号：PCT/CA2006/000918
申请日：2006-06-06
申请人： SIGE SEMICONDUCTOR INC. , HUANG, Chun-Wen Paul , VAILLANCOURT, William
发明人： HUANG, Chun-Wen Paul , VAILLANCOURT, William
IPC分类号： H04B1/38 , H04B1/40 , H04B1/44
CPC分类号： H04B1/48 , H04B1/525
摘要： Systems and methods are provided for a stacked die configuration of a high isolation switch and a rejection filter where transmit and receive signals are desired to have a high out-of-band rejection and a low loss band-pass region. In some aspects of the invention the high isolation switch is a double pole double throw switch modified to operate as a high isolation single pole double throw (SPDT) switch. In some aspects of the invention the high isolation switch is a conventional high isolation SPDT switch. The switch is mounted on a low profile rejection filter having metallization on a portion of an outer surface of the rejection filter. The metallization on the outer surface of the rejection filter provides an AC ground layer in close proximity to the switch that provides a short coupling path between the switch and the AC ground. The resulting switch-filter component also results in a smaller footprint than if the two devices were mounted individually and/or adjacently. The switch-filter component has applications in devices requiring high isolation between transmit and receive paths, for example use within a front-end module (FEM) of a single antenna, multi-radio device.
摘要翻译：提供了用于高隔离开关和抑制滤波器的堆叠管芯配置的系统和方法，其中希望发射和接收信号具有高的带外抑制和低损耗带通区域。在本发明的一些方面，高隔离开关是双极双掷开关，被修改为作为高隔离单极双掷（SPDT）开关工作。在本发明的一些方面，高隔离开关是传统的高隔离SPDT开关。该开关安装在具有在拒绝滤波器的外表面的一部分上具有金属化的薄型阻挡滤波器。在拒绝滤波器的外表面上的金属化提供了紧邻开关的交流接地层，其在开关和AC地之间提供短的耦合路径。所产生的开关滤波器组件还导致比如果两个装置单独地和/或相邻地安装的更小的占地面积。开关滤波器组件在需要在发射和接收路径之间高隔离的设备中具有应用，例如在单个天线的前端模块（FEM），多无线电设备中使用。

49. 发明申请

WO2006099713A1 DEVICE AND APPLICATIONS FOR PASSIVE RF COMPONENTS IN LEADFRAMES 审中-公开
标题翻译： LEADFRAMES中被动射频组件的设备和应用
公开(公告)号：WO2006099713A1
公开(公告)日：2006-09-28
申请号：PCT/CA2006/000180
申请日：2006-02-09
申请人： SIGE SEMICONDUCTOR INC. , LORAINE, Jeremy , KOVACIC, Stephen, J.
发明人： LORAINE, Jeremy , KOVACIC, Stephen, J.
IPC分类号： H01L23/495 , H05K13/00 , H05K5/00 , H05K3/30 , H05K1/18 , H01Q9/00 , H01Q1/38
CPC分类号： H01L23/49541 , H01L23/66 , H01L24/48 , H01L2224/48091 , H01L2924/00014 , H01L2924/14 , H01L2924/3011 , H01Q1/22 , H01Q1/2283 , H01Q1/38 , H01Q9/30 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A leadframe and a semiconductor package including such a lead frame, are provided by embodiments of the invention. The leadframe includes a die flag, leads, and a radio frequency (RF) passive component integrally formed into the leadframe. Examples of the RF passive component can be an antenna, such as a spiral or serpentine antenna or one or more transmission lines that can be used as a coupler or filter. The RF passive component can also be tuned to particular frequency values and ranges depending on the particular location of attachment to the RF passive component. The semiconductor package further comprises a semiconductor die and a coupling means with which to connect to the RF passive component to another location on the leadframe, such as the leads and/or the semiconductor die. The semiconductor package may also be encapsulated in a non-conductive material to protect the semiconductor die, coupling means and RF passive component.
摘要翻译：包括这种引线框的引线框和半导体封装由本发明的实施例提供。引线框架包括芯片标记，引线和一体形成在引线框架中的射频（RF）无源部件。 RF无源部件的示例可以是天线，例如螺旋或蛇形天线，或者可以用作耦合器或滤波器的一个或多个传输线。 RF无源组件也可以根据与RF无源组件的连接的特定位置一起调整到特定的频率值和范围。半导体封装还包括半导体管芯和耦合装置，用于将RF无源部件连接到引线框架上的另一位置，例如引线和/或半导体管芯。半导体封装还可以封装在非导电材料中以保护半导体管芯，耦合装置和RF无源部件。

50. 发明申请

WO2005002045A1 INTEGRATED POWER AMPLIFIER CIRCUIT 审中-公开
公开(公告)号：WO2005002045A1
公开(公告)日：2005-01-06
申请号：PCT/CA2004/000880
申请日：2004-06-17
申请人： SIGE SEMICONDUCTOR INC. , DOHERTY, Mark , GILLIS, John , MCPARTLIN, Michael , HELMS, David , ANTOGNETTI, Phillip
发明人： DOHERTY, Mark , GILLIS, John , MCPARTLIN, Michael , HELMS, David , ANTOGNETTI, Phillip
IPC分类号： H03F1/30
CPC分类号： H03F1/0261 , H03F1/0233 , H03F1/30 , H03F3/195 , H03F2200/207 , H03F2200/447 , H03F2200/451 , H03F2200/504
摘要： Prior art architectures of power amplifiers employ a substantial die area, and utilize multiple integrated circuit technologies with a net higher manufacturing cost and large associated packaging area. A new scheme is presented wherein several sense and control signals are used to provide fine and gross control over the key figures of merit associated with integrated semiconductor power amplifiers. How and where these sense and control signals are used is crucial to achieving the most manufacturable and most economic integrated amplifier. In accordance with a first embodiment of the invention, a Dual Feedback-Low power regulation circuit for a three-stage power amplifier integrated circuit is provided. In accordance with a second embodiment of the invention, a current source feedback circuit having low RF output signal power regulation for a three-stage power amplifier integrated circuit is provided. In accordance with a third embodiment of the invention, a detector circuit in the form of an integrated logarithmic current detector circuit in conjunction with a three stage power amplifier integrated circuit. The three embodiments of the invention advantageously overcome the limitations of the prior art.

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