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41. 发明申请

US20110291122A1 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20110291122A1
公开(公告)日：2011-12-01
申请号：US13114585
申请日：2011-05-24
申请人： Min-Chul SHIN , Kyu-Sik CHO , Won-Kyu LEE , Tae-Hoon YANG , Byoung-Kwon CHOO , Yun-Gyu LEE , Yong-Hwan PARK , Sang-Ho MOON , Bo-Kyung CHOI
发明人： Min-Chul SHIN , Kyu-Sik CHO , Won-Kyu LEE , Tae-Hoon YANG , Byoung-Kwon CHOO , Yun-Gyu LEE , Yong-Hwan PARK , Sang-Ho MOON , Bo-Kyung CHOI
IPC分类号： H01L33/62
CPC分类号： H01L27/3279 , H01L27/3248
摘要： A display device with the substrate divided into three areas. A semiconductor layer is formed in the first second areas and includes a channel area and source/drain areas; a gate insulating layer formed on the semiconductor layer in an area corresponding to the channel area; and a gate electrode formed on the gate insulating layer. The source/drain electrodes contact the source/drain areas, respectively; a pixel electrode is formed in the same layer but in a third area; an interlayer insulating layer is formed on a whole surface of the substrate including the formed structures; and a gate line is formed on the interlayer insulating layer and is electrically connected to a gate electrode of the first area through a via contact hole of the interlayer insulating layer.
摘要翻译：具有分为三个区域的基板的显示装置。半导体层形成在第一第二区域中，并且包括沟道区域和源极/漏极区域; 栅极绝缘层，形成在与沟道区对应的区域中的半导体层上; 以及形成在栅极绝缘层上的栅电极。源极/漏极电极分别接触源极/漏极区域; 像素电极形成在同一层中，但在第三区域中形成; 在包括所形成的结构的基板的整个表面上形成层间绝缘层; 并且在所述层间绝缘层上形成栅极线，并且通过所述层间绝缘层的通孔接触孔与所述第一区域的栅电极电连接。

42. 发明申请

US20110186842A1 Thin film transistor and method of manufacturing the same 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20110186842A1
公开(公告)日：2011-08-04
申请号：US12926861
申请日：2010-12-14
申请人： Sang-Ho Moon , Kyu-Sik Cho , Won-Kyu Lee , Tae-Hoon Yang , Byoung-Kwon Choo , Yong-Hwan Park , Bo-Kyung Choi , Joon-Hoo Choi , Yun-Gyu Lee , Min-Chul Shin
发明人： Sang-Ho Moon , Kyu-Sik Cho , Won-Kyu Lee , Tae-Hoon Yang , Byoung-Kwon Choo , Yong-Hwan Park , Bo-Kyung Choi , Joon-Hoo Choi , Yun-Gyu Lee , Min-Chul Shin
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/786
摘要： A method of manufacturing a thin film transistor and a thin film transistor, the method including sequentially forming a gate insulating layer, an amorphous silicon layer and an insulating layer on an entire top surface of a substrate having a gate electrode; patterning the insulating layer to form an etch stopper; and patterning the amorphous silicon layer to form a semiconductor layer.
摘要翻译：一种制造薄膜晶体管和薄膜晶体管的方法，所述方法包括在具有栅电极的基板的整个顶表面上顺序地形成栅极绝缘层，非晶硅层和绝缘层; 图案化绝缘层以形成蚀刻停止层; 以及图案化所述非晶硅层以形成半导体层。

43. 发明申请

US20100200849A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20100200849A1
公开(公告)日：2010-08-12
申请号：US12535887
申请日：2009-08-05
申请人： Seong-Kweon Heo , Min-Chul Shin , Chang-Mo Park
发明人： Seong-Kweon Heo , Min-Chul Shin , Chang-Mo Park
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L27/1225 , H01L29/78606
摘要： A thin film transistor and a manufacturing method thereof are provided. In the manufacturing method of the thin film transistor a semiconductive active layer and a semiconductor passivation layer are sequentially formed such that the semiconductor passivation layer protectively covers the semiconductive active layer. Then the stacked combination of the semiconductive active layer and semiconductor passivation layer are patterned by using a same patterning mask so that formed islands of the semiconductive active layer continue to be protectively covered by formed islands of the semiconductor passivation layer. In one embodiment, the semiconductive active layer is formed of a semiconductive oxide.
摘要翻译：提供薄膜晶体管及其制造方法。在薄膜晶体管的制造方法中，顺序地形成半导体有源层和半导体钝化层，使得半导体钝化层保护性地覆盖半导体活性层。然后通过使用相同的图案掩模对半导体有源层和半导体钝化层的层叠组合进行构图，使得半导体有源层的形成的岛继续被半导体钝化层的形成的岛保护性地覆盖。在一个实施例中，半导体活性层由半导体氧化物形成。

44. 发明申请

US20100105452A1 MOBILE TERMINAL HAVING SHIELDING MEMBER 有权
标题翻译：具有屏蔽构件的移动终端
公开(公告)号：US20100105452A1
公开(公告)日：2010-04-29
申请号：US12567990
申请日：2009-09-28
申请人： Min-Chul Shin , Han-Seok Chae
发明人： Min-Chul Shin , Han-Seok Chae
IPC分类号： H04M1/00
CPC分类号： H04M1/0277 , H04B1/3838
摘要： A mobile terminal is provided that includes front and rear cases, an intermediate case between the front and rear cases, and a printed circuit board between the intermediate cases and at least one of the front and rear cases. A shielding member having a first width, length and thickness, and being formed of a metal. Non-conductive material may have a second thickness attached to at least two edges of the shielding member.
摘要翻译：提供一种移动终端，其包括前壳体和后壳体，前壳体和后壳体之间的中间壳体以及中间壳体与前壳体和后壳体中的至少一个之间的印刷电路板。一种具有第一宽度，长度和厚度并由金属形成的屏蔽构件。非导电材料可以具有附着到屏蔽构件的至少两个边缘的第二厚度。

45. 发明授权

US07527690B2 Ferroelectric ceramic compound, a ferroelectric ceramic single crystal, and preparation processes thereof 有权
标题翻译：铁电陶瓷复合物，铁电陶瓷单晶及其制备方法
公开(公告)号：US07527690B2
公开(公告)日：2009-05-05
申请号：US10551355
申请日：2003-07-30
申请人： Sang-Goo Lee , Min-Chan Kim , Byung-Ju Choi , Min-Chul Shin , Su-Han Yu
发明人： Sang-Goo Lee , Min-Chan Kim , Byung-Ju Choi , Min-Chul Shin , Su-Han Yu
IPC分类号： C30B11/04
CPC分类号： C01G33/006 , C01P2006/40 , C30B11/00 , C30B29/22 , H01G7/06 , H01L21/3147 , H01L21/31691 , H01L41/18
摘要： The present invention relates to a ferroelectric ceramic compound having the composition of the following formula: s[L]−x[P]y[M]z[N]p[T], a ferroelectric ceramic single crystal, and preparation processes thereof. The ferroelectric ceramic compound and the single crystal according to the present invention are relaxor ferroelectrics having high piezoelectricity, a high electromechanical coefficient and a high electrooptical coefficient, and are useful for manufacturing tunable filters for radio communication, optical communication devices, surface acoustic wave devices, and the like. Particularly, the process of preparing the single crystal according to the present invention enables preparation of a single crystal having a diameter of 5 cm or greater and a single crystal wafer with uniform composition. In the formula, [P] is lead oxide, [M] is magnesium oxide or zinc oxide, [N] is niobium oxide, [T] is titanium oxide, [L] is one selected from the group consisting of lithium tantalate or lithium niobate, lithium, lithium oxide, platinum, indium, palladium, rhodium, nickel, cobalt, iron, strontium, scandium, ruthenium, copper, yttrium, and ytterbium or mixtures thereof, and x, y, z, p and s are defined as 0.55
摘要翻译：本发明涉及具有下式的组成的铁电陶瓷化合物及其制备方法：s [L] -x [P] y [M] z [N] p [T]，铁电陶瓷单晶。根据本发明的铁电陶瓷化合物和单晶是具有高压电性，高机电系数和高电光系数的弛豫铁电体，并且可用于制造用于无线电通信的可调谐滤波器，光通信装置，表面声波装置，等等。特别地，根据本发明的制备单晶的方法能够制备直径为5cm以上的单晶和具有均匀组成的单晶晶片。在该式中，[P]是氧化铅，[M]是氧化镁或氧化锌，[N]是氧化铌，[T]是氧化钛，[L]是选自钽酸锂或锂铌酸锂，锂，氧化锂，铂，铟，钯，铑，镍，钴，铁，锶，钪，钌，铜，钇和镱或其混合物，x，y，z，p和s定义为 0.55

46. 外观设计

USD425800S Age verification device 失效
公开(公告)号：USD425800S
公开(公告)日：2000-05-30
申请号：US109444
申请日：1999-08-12
申请人： Min Chul Shin
设计人： Min Chul Shin

47. 发明申请

US20170153136A1 CLAMP-ON ULTRASONIC FLOW RATE MEASURING DEVICE HAVING AUTOMATIC PIPE THICKNESS MEASURING FUNCTION 审中-公开
公开(公告)号：US20170153136A1
公开(公告)日：2017-06-01
申请号：US15361425
申请日：2016-11-27
申请人： Min-Chul SHIN
发明人： Min-Chul SHIN
IPC分类号： G01F1/66 , G01B17/02
CPC分类号： G01F1/662 , G01B17/02 , G01F1/002 , G01F1/667 , G01F15/00 , G01F25/0007
摘要： A clamp on type of an ultrasonic flow rate-measuring device attached to an outer wall and having an automatic pipe thickness measuring function is disclosed. The ultrasonic flow rate measuring-device includes an automatic pipe thickness measuring function. The ultrasonic flow rate-measuring device is fixed to the outer diameter of a pipe of which the material is known but the thickness is unknown. The ultrasonic flow rate-measuring device adopts a resonant frequency, which generates a maximum voltage level during frequency sweeping through the entire path. Thus, the ultrasonic flow rate-measuring device measures the resonant frequency by using an average resonant frequency through the entire path of an ultrasonic wave, wherein the entire path corresponds to a path in which an ultrasonic wave radiated from one of a pair of ultrasonic transducers passes through one side of a pipe wall and passes inside of the pipe and passes through the other side of the pipe wall to the other one of the pair of ultrasonic transducers, thereby accurately measuring the thickness of a pipe even when an actual thickness of a pipe is changed by solid sludge or any other contamination. Both sides of the pipe wall correspond to thickness portions of the pipe. The ultrasonic flow rate-measuring device accurately determinates an inner area of pipe conduit by automatically inputting a previously measured actual pipe thickness to a flow calculating equation, so that accuracy of flow measurement is enhanced. It should be noted that the present invention is suitable for an actual field situation where various kinds of contaminations in the pipe exist.

48. 发明授权

US08980663B2 Organic light emitting diode display device and method of fabricating the same 有权
标题翻译：有机发光二极管显示装置及其制造方法
公开(公告)号：US08980663B2
公开(公告)日：2015-03-17
申请号：US13945236
申请日：2013-07-18
申请人： Won-Kyu Lee , Kyu-Sik Cho , Tae-Hoon Yang , Byoung-Kwon Choo , Sang-Ho Moon , Bo-Kyung Choi , Yong-Hwan Park , Joon-Hoo Choi , Min-Chul Shin , Yun-Gyu Lee
发明人： Won-Kyu Lee , Kyu-Sik Cho , Tae-Hoon Yang , Byoung-Kwon Choo , Sang-Ho Moon , Bo-Kyung Choi , Yong-Hwan Park , Joon-Hoo Choi , Min-Chul Shin , Yun-Gyu Lee
IPC分类号： H01L29/08 , H01L51/56 , H01L27/12 , H01L27/32
CPC分类号： H01L51/56 , H01L27/1214 , H01L27/1251 , H01L27/1274 , H01L27/3262 , H01L2227/323
摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same are disclosed. The OLED display device includes a plurality of scan lines, a plurality of data lines, and a plurality of pixels disposed in a region in which the scan lines cross the data lines, where each pixel of the plurality of pixels includes: a switching transistor including a first gate electrode, a first semiconductor layer disposed over the first gate electrode, a first gate insulating layer interposed between the first gate electrode and the first semiconductor layer, a first source electrode and a first drain electrode, a driving transistor including a second semiconductor layer, a second gate electrode disposed over the second semiconductor layer, a second gate insulating layer interposed between the second gate electrode and the second semiconductor layer, a second source electrode and a second drain electrode, and an organic light emitting diode electrically connected with the second source and second drain electrodes of the driving transistor, where the first and second semiconductor layers are formed of the same material, and from the same processing.
摘要翻译：公开了一种有机发光二极管（OLED）显示装置及其制造方法。 OLED显示装置包括多个扫描线，多条数据线以及配置在扫描线与数据线交叉的区域中的多个像素，其中多个像素中的每个像素包括：开关晶体管，包括：第一栅电极，设置在第一栅电极上的第一半导体层，插入在第一栅电极和第一半导体层之间的第一栅绝缘层，第一源电极和第一漏电极，驱动晶体管，包括第二半导体设置在第二半导体层上的第二栅极电极，插入在第二栅极电极和第二半导体层之间的第二栅极绝缘层，第二源极电极和第二漏极电极以及与第二栅电极电连接的有机发光二极管驱动晶体管的第二源极和第二漏极，其中第一和第二半导体1 ayers由相同的材料形成，并且从相同的处理。

49. 发明授权

US08633484B2 Organic light emitting display and method of fabricating the same 有权
标题翻译：有机发光显示器及其制造方法
公开(公告)号：US08633484B2
公开(公告)日：2014-01-21
申请号：US13064379
申请日：2011-03-22
申请人： Won-Kyu Lee , Tae-Hoon Yang , Bo-Kyung Choi , Byoung-Kwon Choo , Kyu-Sik Cho , Yong-Hwan Park , Sang-Ho Moon , Min-Chul Shin , Yun-Gyu Lee , Joon-Hoo Choi
发明人： Won-Kyu Lee , Tae-Hoon Yang , Bo-Kyung Choi , Byoung-Kwon Choo , Kyu-Sik Cho , Yong-Hwan Park , Sang-Ho Moon , Min-Chul Shin , Yun-Gyu Lee , Joon-Hoo Choi
IPC分类号： H01L31/00
CPC分类号： H01L27/1251 , H01L27/1218 , H01L27/1281 , H01L27/1285 , H01L27/3262
摘要： An organic light emitting display and method of fabricating thereof, the display including a substrate including a first thin film transistor region and a second thin film transistor region; a buffer layer on the substrate; a first and a second semiconductor layer on the buffer layer; a gate insulating layer on the substrate; gate electrodes on the gate insulating layer and corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrode and being connected to the first semiconductor layer and the second semiconductor layer, respectively; an insulating layer on the substrate; a first electrode connected to the source/drain electrode electrically connected to the first semiconductor layer; an organic layer on the first electrode; and a second electrode on the organic layer, wherein portions of the buffer layer corresponding to a source/drain region of the first semiconductor layer include a metal catalyst.
摘要翻译：一种有机发光显示器及其制造方法，所述显示器包括：包括第一薄膜晶体管区域和第二薄膜晶体管区域的基板; 衬底上的缓冲层; 缓冲层上的第一和第二半导体层; 基板上的栅极绝缘层; 栅绝缘层上分别对应于第一半导体层和第二半导体层的栅电极; 源极/漏极电极，与栅电极绝缘并分别连接到第一半导体层和第二半导体层; 衬底上的绝缘层; 连接到与第一半导体层电连接的源/漏电极的第一电极; 第一电极上的有机层; 以及有机层上的第二电极，其中与第一半导体层的源极/漏极区对应的缓冲层的部分包括金属催化剂。

50. 发明申请

US20130302928A1 ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：有机发光二极管显示装置及其制造方法
公开(公告)号：US20130302928A1
公开(公告)日：2013-11-14
申请号：US13945236
申请日：2013-07-18
申请人： Won-Kyu Lee , Kyu-Sik Cho , Tae-Hoon Yang , Byoung-Kwon Choo , Sang-Ho Moon , Bo-Kyung Choi , Yong-Hwan Park , Joon-Hoo Choi , Min-Chul Shin , Yun-Gyu Lee
发明人： Won-Kyu Lee , Kyu-Sik Cho , Tae-Hoon Yang , Byoung-Kwon Choo , Sang-Ho Moon , Bo-Kyung Choi , Yong-Hwan Park , Joon-Hoo Choi , Min-Chul Shin , Yun-Gyu Lee
IPC分类号： H01L51/56
CPC分类号： H01L51/56 , H01L27/1214 , H01L27/1251 , H01L27/1274 , H01L27/3262 , H01L2227/323
摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same are disclosed. The OLED display device includes a plurality of scan lines, a plurality of data lines, and a plurality of pixels disposed in a region in which the scan lines cross the data lines, where each pixel of the plurality of pixels includes: a switching transistor including a first gate electrode, a first semiconductor layer disposed over the first gate electrode, a first gate insulating layer interposed between the first gate electrode and the first semiconductor layer, a first source electrode and a first drain electrode, a driving transistor including a second semiconductor layer, a second gate electrode disposed over the second semiconductor layer, a second gate insulating layer interposed between the second gate electrode and the second semiconductor layer, a second source electrode and a second drain electrode, and an organic light emitting diode electrically connected with the second source and second drain electrodes of the driving transistor, where the first and second semiconductor layers are formed of the same material, and from the same processing.
摘要翻译：公开了一种有机发光二极管（OLED）显示装置及其制造方法。 OLED显示装置包括多个扫描线，多条数据线以及配置在扫描线与数据线交叉的区域中的多个像素，其中多个像素中的每个像素包括：开关晶体管，包括：第一栅电极，设置在第一栅电极上的第一半导体层，插入在第一栅电极和第一半导体层之间的第一栅绝缘层，第一源电极和第一漏电极，驱动晶体管，包括第二半导体设置在第二半导体层上的第二栅极电极，插入在第二栅极电极和第二半导体层之间的第二栅极绝缘层，第二源极电极和第二漏极电极以及与第二栅电极电连接的有机发光二极管驱动晶体管的第二源极和第二漏极，其中第一和第二半导体1 ayers由相同的材料形成，并且从相同的处理。

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