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    • 41. 发明专利
    • Mixing/transferring device for microfluid and mixing/transferring device for microfluid by alternating current electrophoretic method
    • 用于微流控制的混合/传输装置,用于通过替代电流电泳方法进行微流控制的混合/传输装置
    • JP2008170405A
    • 2008-07-24
    • JP2007015306
    • 2007-01-25
    • Korea Advanced Inst Of Sci Technol韓国科学技術院Korea Advanced Institute Of Science And Technology
    • SUNG HYUNG-JINYOON SANG-YOULKIM BYOUNG-JAE
    • G01N27/447C12M1/00G01N37/00
    • F04B19/006B01F13/0076
    • PROBLEM TO BE SOLVED: To provide a device and a method for mixing microfluids while transferring, or for mixing concurrently the microfluids with a biomolecule while transferring. SOLUTION: This mixing/transferring device for the microfluids is arranged with an electrode pair arranged in parallel with the first electrode and the second electrode having a width wider than that of the first electrode, on at least one or more of inner faces of a fluid transfer route, and an alternating current voltage is impressed to the electrode pair to mix and transfer concurrently the microfluids. In the mixing/transferring device for the microfluids of the present invention, the alternating current voltage is impressed to the pair of electrodes constituted of the relatively narrow electrode and the wide electrode, a complicated flow characteristic is generated by an electrophoretic method, and the microfluids are efficiently mixed and transferred concurrently in a filed of compact medical equipment, compact fluid equipment or the like. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供在转移时混合微流体的装置和方法,或者在转移时同时将微流体与生物分子混合。 解决方案:用于微流体的该混合/转移装置布置成在第一电极和第二电极平行布置的电极对的宽度比第一电极的宽度宽的至少一个或多个内表面 的流体转移路径,并且将交流电压施加到电极对以混合并同时转移微流体。 在本发明的微流体的混合/转移装置中,将交流电压施加到由相对窄的电极和宽电极构成的一对电极中,通过电泳方法产生复杂的流动特性,并且微流体 在紧凑型医疗设备,紧凑型流体设备等领域中同时有效地混合和转移。 版权所有(C)2008,JPO&INPIT
    • 43. 发明专利
    • Digital/analog converter
    • 数字/模拟转换器
    • JP2007336540A
    • 2007-12-27
    • JP2007153171
    • 2007-06-08
    • Korea Advanced Inst Of Sci Technol韓国科学技術院
    • CHO GYU HYEONGJEON YONG-JOONSON YOUNG-SUKKIM SANG KYUNGJEON JIN YONGLEE GUN HO
    • H03M1/74
    • H03M1/745
    • PROBLEM TO BE SOLVED: To provide a digital/analog converter having a high resolution characteristic or the like.
      SOLUTION: The digital/analog converter includes: a current supply section 31; a current distribution section 32 for distributing a current supplied from the current supply section; an inverter section 36 for outputting an inverted signal and a non-inverted signal for an input signal; a switching section 35 for controlling the flow of the current distributed by the current distribution section in response to the inverted signal and the non-inverted signal; and a current output section 37 for outputting an analog signal by adding the distributed current corresponding to the non-inverted signal.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供具有高分辨率特性等的数/模转换器。 数字/模拟转换器包括:电流供应部分31; 用于分配从电流供给部提供的电流的电流分配部32; 用于输出用于输入信号的反相信号和非反相信号的反相器部分36; 切换部分35,用于响应于反相信号和非反相信号控制由电流分配部分分布的电流的流动; 以及电流输出部分37,用于通过将与非反相信号相对应的分布电流相加来输出模拟信号。 版权所有(C)2008,JPO&INPIT
    • 45. 发明专利
    • Memory system having improved multi-module memory bus structure
    • 具有改进的多模块存储器总线结构的存储器系统
    • JP2007207227A
    • 2007-08-16
    • JP2007000123
    • 2007-01-04
    • Korea Advanced Inst Of Sci TechnolSamsung Electronics Co Ltd三星電子株式会社Samsung Electronics Co.,Ltd.韓国科学技術院
    • SUNG MYUNG-HEEKIM JONG-HOONKIM JOUNG-HOKIM JIN-GOOK
    • G06F13/16G06F3/00G06F12/00
    • G11C5/063G11C5/04G11C5/14
    • PROBLEM TO BE SOLVED: To provide a memory system having a multi-module memory bus structure which can reduce or remove re-reflection through a transmission line by utilizing a Wilkinson power divider.
      SOLUTION: The memory system includes: a memory controller; a transmission bus whose one end is connected to the memory controller for transmitting a signal; the power distributor whose first node is connected to the other end of the transmission bus and having second and third nodes; a first memory module connected to the second node through a first branch bus; and a second memory module connected to the third node through a second branch bus. Consequently, occurrence of interference in the signal transmission of the first memory module is prevented by allowing a signal reflected from the second memory module to generate resonance through the second branch bus by impedance mismatching.
      COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供一种具有多模块存储器总线结构的存储器系统,其可以通过利用威尔金森功率分配器来减少或消除通过传输线的再反射。 解决方案:存储器系统包括:存储器控制器; 传输总线,其一端连接到用于发送信号的存储器控​​制器; 所述电力分配器的第一节点连接到所述传输总线的另一端并且具有第二和第三节点; 通过第一分支总线连接到第二节点的第一存储器模块; 以及通过第二分支总线连接到第三节点的第二存储器模块。 因此,通过允许从第二存储器模块反射的信号通过第二分支总线通过阻抗失配产生谐振来防止第一存储器模块的信号传输中的干扰的发生。 版权所有(C)2007,JPO&INPIT
    • 47. 发明专利
    • Field effect transistor having channel composed of silicon fin and silicon body, and its manufacturing method
    • 具有硅金属和硅体组成的通道的场效应晶体管及其制造方法
    • JP2007173326A
    • 2007-07-05
    • JP2005365431
    • 2005-12-19
    • Korea Advanced Inst Of Sci Technol韓国科学技術院
    • CHOI YANG-KYULEE HYONJIN
    • H01L29/786H01L29/78
    • H01L29/785H01L29/7854
    • PROBLEM TO BE SOLVED: To provide a field effect transistor having a channel composed of a silicon fin and a silicon body which have different directions, and to provide its manufacturing method. SOLUTION: The method comprises (a) a step of forming in succession a silicon substrate, a lower oxide film, silicon, and a hard mask; (b) a step of forming a silicon fin where a channel is formed, and forming a silicon pattern where a source/drain region is formed, using the foregoing mask pattern as a mask, to form a silicon body for coupling among the silicon fins by anisotropically etching the silicon of a predetermined thickness for formation of the channel; (c) a step of separating the source/drain region from an element by partially etching a silicon thin film utilizing an active mask; and (d) a step of forming a gate region by successively depositing a gate substance and the gate mask by growing a gate dielectric film around the silicon channel. COPYRIGHT: (C)2007,JPO&INPIT
    • 解决的问题:提供一种场效应晶体管,其具有由具有不同方向的硅鳍和硅体组成的通道,并提供其制造方法。 解决方案:该方法包括(a)连续形成硅衬底,低氧化物膜,硅和硬掩模的步骤; (b)使用上述掩模图案作为掩模,形成沟槽形成硅片并形成其源极/漏极区的硅图案的步骤,以形成用于在硅片之间耦合的硅体 通过各向异性地蚀刻预定厚度的硅以形成通道; (c)通过利用有源掩模部分蚀刻硅薄膜来分离源极/漏极区域与元件的步骤; 以及(d)通过在硅沟道周围生长栅极电介质膜来连续地沉积栅极物质和栅极掩模来形成栅极区域的步骤。 版权所有(C)2007,JPO&INPIT