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41. 发明授权

US06504593B1 Display electrode arrangement for a reflection type liquid crystal display device 失效
标题翻译：用于反射型液晶显示装置的显示电极装置
公开(公告)号：US06504593B1
公开(公告)日：2003-01-07
申请号：US09615453
申请日：2000-07-13
申请人： Kazuto Noritake , Keiichi Sano
发明人： Kazuto Noritake , Keiichi Sano
IPC分类号： G02F11343
CPC分类号： G02F1/136227 , G02F1/133553 , G02F2203/02
摘要： An insulator substrate (10) is provided with a TFT including a first gate electrode (11), a gate insulating film (12), a semiconductor film (13) disposed above the first gate electrode (11), and an interlayer insulating film (15). On the interlayer insulating film (15) in a position above a channel (13c), the TFT further includes a second gate electrode (17) connected to the first gate electrode (11). A reflective display electrode (20) composed of a reflective material and connected to a source (13s) of the TFT is arranged to extend over the TFT. In addition, the gap (37) between adjacent reflective display electrodes (20) is arranged in a position other than a position above a drain signal line (52). With this arrangement, even when a black image is displayed on a crystal display device of a normally white mode, display defects due to reflection of incident light by a signal line are prevented. Furthermore, a reflection type liquid crystal display device having a high aperture rate and minimal fluctuation in the TFT characteristics can be achieved.
摘要翻译：绝缘体基板（10）设置有包括第一栅电极（11），栅极绝缘膜（12），设置在第一栅电极（11）上方的半导体膜（13）和层间绝缘膜（ 15）。在沟道（13c）上方的层间绝缘膜（15）上，TFT还包括连接到第一栅电极（11）的第二栅电极（17）。由反射材料构成并连接到TFT的源极（13s）的反射显示电极（20）布置成在TFT上延伸。此外，相邻的反射显示电极（20）之间的间隙（37）布置在除了信号线（52）之上的位置以外的位置。通过这种布置，即使当黑色图像显示在常白模式的晶体显示装置上时，也防止了由于信号线的入射光的反射引起的显示缺陷。此外，可以实现具有高开口率和最小的TFT特性波动的反射型液晶显示装置。

42. 发明授权

US5705828A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US5705828A
公开(公告)日：1998-01-06
申请号：US544956
申请日：1996-02-20
申请人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
发明人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
IPC分类号： H01L31/0725 , H01L31/0747 , H01L31/20 , H01L29/04 , H01L31/036 , H01L31/0376
CPC分类号： H01L31/0725 , H01L31/0747 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： The disclosure relates to a photovoltaic device comprising a transparent electrode, one conductive type amorphous semiconductor, another conductive type crystal semiconductor, an intrinsic amorphous semiconductor, another conductive type amorphous semiconductor and a metal electrode and having a first semiconductor junction composed of the one conductive type amorphous semiconductor and the another conductive type crystal semiconductor, and a second semiconductor junction composed of the another type crystal semiconductor and the another conductive type amorphous semiconductor, wherein the transparent electrode is located on light incident side of the one conductive type amorphous semiconductor, the metal electrode is located on another side, the intrinsic amorphous semiconductor is located between the another conductive type crystal semiconductor and the another conductive type amorphous semiconductor, the first semiconductor junction is located on the light incident side, and the second semiconductor junction is located on the another side. In the device, the crystal semiconductor is composed single-crystalline semiconductor or polycrystalline semiconductor.
摘要翻译：本发明涉及一种光电器件，其包括透明电极，一个导电型非晶半导体，另一导电型晶体半导体，本征非晶半导体，另一导电型非晶半导体和金属电极，并具有由一个导电型非晶半导体和另一导电型晶体半导体，以及由另一种类型的晶体半导体和另一种导电型非晶半导体构成的第二半导体结，其中透明电极位于一个导电型非晶半导体的光入射侧，金属电极位于另一侧，本征非晶半导体位于另一导电型晶体半导体与另一导电型非晶半导体之间，第一半导体结位于光入射侧，而秒 ond半导体结位于另一侧。在该器件中，晶体半导体是单晶半导体或多晶半导体。

43. 发明授权

US5549763A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US5549763A
公开(公告)日：1996-08-27
申请号：US280453
申请日：1994-07-26
申请人： Keiichi Sano , Yoichiro Aya , Norihiro Terada , Yasuki Harata
发明人： Keiichi Sano , Yoichiro Aya , Norihiro Terada , Yasuki Harata
IPC分类号： H01L31/0236 , H01L31/0352 , H01L31/075 , H01L31/20
CPC分类号： H01L31/202 , H01L31/0236 , H01L31/03529 , H01L31/075 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： In a photovoltaic device, when an internal electric field in a photoelectric conversion layer becomes non-uniform in the surface direction of the layer for a reason such as the interface between a transparent conductive film and the photoelectric conversion layer being formed in an irregular shape, the internal electric field in the photoelectric conversion layer is made uniform by (1) making the thickness of an intrinsic layer inside the photoelectric conversion layer in portions of the photoelectric conversion layer where the internal electric field becomes weak smaller than that in the other portions, (2) providing regions where conductivity is high and activation energy is low in the photoelectric conversion layer in the said portions, or (3) containing a ferroelectric material in a portion of the intrinsic layer inside the photoelectric conversion layer.
摘要翻译：在光电器件中，由于透明导电膜和光电转换层之间的界面形成为不规则形状的原因，当光电转换层中的内部电场在层的表面方向上变得不均匀时，通过（1）使光电转换层内的本征层的厚度在内部电场变弱的部分中的内部电场的弱度比其他部分小的光电转换层中的内部电场均匀，（2）在所述部分中的光电转换层中提供导电性高，活化能低的区域，或（3）在光电转换层内的本征层的一部分中含有铁电体材料。

44. 发明授权

US5447889A Method of preparing polycrystalline silicon film 失效
标题翻译：制备多晶硅膜的方法
公开(公告)号：US5447889A
公开(公告)日：1995-09-05
申请号：US118451
申请日：1993-09-08
申请人： Keiichi Sano
发明人： Keiichi Sano
IPC分类号： H01L21/20 , H01L21/469
CPC分类号： H01L21/2022
摘要： Disclosed herein is a method of preparing a polycrystalline silicon film comprising a step of forming an amorphous silicon film containing hydrogen and having an intensity ratio TA/TO of at least 0.5 of TA peak intensity to TO peak intensity in a Raman spectrum, and a step of heat treating the amorphous silicon film for converting the same to a polycrystalline silicon film.
摘要翻译：本文公开了一种制备多晶硅膜的方法，包括以下步骤：形成含有氢的非晶硅膜，其拉曼光谱中的TA峰强度的至少为0.5的强度比TA / TO至TO峰值强度，步骤对非晶硅膜进行热处理以将其转换为多晶硅膜。

45. 发明授权

US5419783A Photovoltaic device and manufacturing method therefor 失效
标题翻译：光伏器件及其制造方法
公开(公告)号：US5419783A
公开(公告)日：1995-05-30
申请号：US036455
申请日：1993-03-24
申请人： Shigeru Noguchi , Keiichi Sano , Hiroshi Iwata
发明人： Shigeru Noguchi , Keiichi Sano , Hiroshi Iwata
IPC分类号： H01L31/052 , H01L31/075 , H01L31/20
CPC分类号： H01L31/075 , H01L31/208 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device has a transparent substrate, a transparent electrode layer, a photovoltaic layer, and a back electrode which are stacked in this order. The photovoltaic layer has a p-type a-SiC layer provided on the transparent electrode layer, a buffer layer provided on the p-type a-SiC layer, a photosensitive layer provided on the buffer layer, and an n-type semiconductor layer provided on the photosensitive layer. The buffer layer is an a-SiC layer first deposited on the p-type a-SiC layer and then subjected to a plasma treatment. The plasma treatment should be carried out using a gas selected from a group consisting of hydrogen (H.sub.2), Argon (Ar), Helium (He), Neon (Ne), Krypton (Kr), and Xenon (Xe). In the device, the buffer layer may be composed of a microcrystalline SiC layer or an amorphous SiC layer. The buffer layer may have a thickness ranging from about 10 .ANG. to about 100 .ANG., and may be formed by a plasma-CVD process.
摘要翻译：光电器件具有依次层叠的透明基板，透明电极层，光电转换层和背面电极。光电层具有设置在透明电极层上的p型a-SiC层，设置在p型a-SiC层上的缓冲层，设置在缓冲层上的感光层和设置在缓冲层上的n型半导体层在感光层上。缓冲层是首先沉积在p型a-SiC层上的a-SiC层，然后进行等离子体处理。等离子体处理应使用选自氢（H2），氩（Ar），氦（He），氖（Ne），氪（Kr）和氙（Xe）的气体进行。在该器件中，缓冲层可以由微晶SiC层或非晶SiC层构成。缓冲层可以具有从大约10安培到大约100埃的厚度，并且可以通过等离子体CVD法形成。

46. 发明授权

US5236516A Photovoltaic apparatus 失效
标题翻译：光伏设备
公开(公告)号：US5236516A
公开(公告)日：1993-08-17
申请号：US762850
申请日：1991-09-18
申请人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
发明人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
IPC分类号： H01L31/04 , H01L27/142 , H01L31/052 , H01L31/075
CPC分类号： H01L31/075 , H01L31/046 , H01L31/056 , Y02E10/52 , Y02E10/548
摘要： A photovoltaic apparatus for directly converting light energy into electric energy, comprising a light shielding substrate, at least one surface of the light shielding substrate being a metal; a light transmitting insulating layer on the above surface; and a photovoltaic body on a surface of the insulating layer, the photovoltaic body including a light transmitting first electrode, an amorphous or microcrystal semiconductive layer, and a light transmitting second electrode laminated in this order, with the first electrode being in contact with the insulating layer.
摘要翻译：一种用于将光能直接转换为电能的光伏装置，包括遮光基板，所述遮光基板的至少一个表面是金属; 上述表面上的透光绝缘层; 以及在所述绝缘层的表面上的光电体，所述光电体包括透光性第一电极，非晶或微晶半导体层和依次层叠的透光性第二电极，所述第一电极与所述绝缘体层。

47. 发明授权

US5231297A Thin film transistor 失效
标题翻译：薄膜晶体管
公开(公告)号：US5231297A
公开(公告)日：1993-07-27
申请号：US818745
申请日：1992-01-07
申请人： Shoichiro Nakayama , Shigeru Noguchi , Keiichi Sano , Hiroshi Iwata , Hiroyuki Kuriyama
发明人： Shoichiro Nakayama , Shigeru Noguchi , Keiichi Sano , Hiroshi Iwata , Hiroyuki Kuriyama
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L29/66757 , H01L29/78618
摘要： A thin film transistor with a noncrystalline semiconductor film, wherein an amorphous semiconductor in a position corresponding to a channel between a source electrode and a drain electrode is polycrystallized, while on both side areas or around the polycrystallized area remains amorphous. The thin film transistor may be a noncrystalline semiconductor film with a heterojunction between a channel area and a source and drain area.
摘要翻译：一种具有非晶半导体膜的薄膜晶体管，其中对应于源电极和漏电极之间的沟道的位置的非晶半导体是多结晶的，而在所述多结晶区域的两个侧面区域或其周围仍保持无定形。薄膜晶体管可以是在沟道区域和源极和漏极区域之间具有异质结的非晶半导体膜。

48. 发明授权

US5221365A Photovoltaic cell and method of manufacturing polycrystalline semiconductive film 失效
标题翻译：光电池和制造多晶半导体膜的方法
公开(公告)号：US5221365A
公开(公告)日：1993-06-22
申请号：US781486
申请日：1991-10-18
申请人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
发明人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
IPC分类号： H01L31/0236 , H01L31/0368 , H01L31/18 , H01L31/20
CPC分类号： H01L31/03682 , H01L31/0236 , H01L31/186 , H01L31/202 , Y02E10/546 , Y02P70/521 , Y10S148/09 , Y10S148/122 , Y10S148/153 , Y10S438/964
摘要： A thin film transistor and a photovoltaic cell wherein a polycrystalline semiconductive film, having a large grain size and high carrier mobility obtained by heat treatment of a polycrystalline semiconductive film, an amorphous semiconductive film, a microcrystalline semiconductive film or the like on a substrate with a textured surface, is used as a channel layer or a photo-activation layer, the textured surface being formed by etching one surface of the substrate or forming a textured thin film on the substrate.A method of manufacturing a polycrystalline semiconductive film, wherein a surface of a substrate is etched or a textured thin film is formed on the substrate to form a textured surface, and a polycrystalline semiconductive film, an amorphous semiconductive film, a microcrystalline semiconductive film or the like is formed on the textured surface, and the semiconductive film is polycrystallized by heat treatment.
摘要翻译：一种薄膜晶体管和光伏电池，其中通过在基板上热处理多晶半导体膜，非晶半导体膜，微晶半导体膜等而获得具有大晶粒尺寸和高载流子迁移率的多晶半导体膜，纹理表面用作沟道层或光致活化层，纹理表面通过蚀刻衬底的一个表面或在衬底上形成纹理化的薄膜而形成。一种制造多晶半导体膜的方法，其中蚀刻衬底的表面或在衬底上形成织构化薄膜以形成织构表面，以及多晶半导体膜，非晶半导体膜，微晶半导体膜或形成在纹理表面上，并且半导体膜通过热处理多晶化。

49. 发明授权

US5211761A Photovoltaic device and manufacturing method thereof 失效
标题翻译：光伏器件及其制造方法
公开(公告)号：US5211761A
公开(公告)日：1993-05-18
申请号：US722949
申请日：1991-06-28
申请人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
发明人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
IPC分类号： H01L31/0392 , H01L31/078 , H01L31/18
CPC分类号： H01L31/182 , H01L31/03921 , H01L31/078 , Y02E10/546 , Y02P70/521
摘要： A photovoltaic device according to the present invention has a buffer layer on a heat-resistant substrate for enhancing the adhesion characteristic of the substrate, a first semiconductor thin film including polycrystalline silicon of one conductivity type formed by a liquid phase growth method, and a second semiconductor thin film of opposite conductivity type, formed in this order.
摘要翻译：根据本发明的光电器件在耐热基板上具有用于增强基板的粘合特性的缓冲层，包括通过液相生长法形成的一种导电类型的多晶硅的第一半导体薄膜和第二半导体薄膜具有相反导电型的半导体薄膜，依次形成。

50. 发明授权

US5183780A Method of fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5183780A
公开(公告)日：1993-02-02
申请号：US658389
申请日：1991-02-20
申请人： Shigeru Noguchi , Satoshi Ishida , Hiroshi Iwata , Keiichi Sano , Shoichiro Nakayama
发明人： Shigeru Noguchi , Satoshi Ishida , Hiroshi Iwata , Keiichi Sano , Shoichiro Nakayama
IPC分类号： H01L29/78 , H01L21/02 , H01L21/20 , H01L21/225 , H01L21/285 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/786 , H01L29/92
CPC分类号： H01L29/78696 , H01L21/2022 , H01L21/2257 , H01L21/28525 , H01L27/1214 , H01L28/40 , H01L29/66757 , H01L29/66765 , H01L29/78618
摘要： In a method of fabricating a semiconductor device according to the present invention, a semiconductor film is formed on a substrate, and an insulator film is formed so as to cover the semiconductor film. Then, a dopant source is arranged on the insulator film and then, a region for electrical contact is irradiated with a high-energy beam through the dopant source. Consequently, the insulator film and the semiconductor film in the irradiated region are melted, to form a polycrystalline contact region having impurities supplied from the dopant source doped therein. Thus, the high-energy beam is irradiated to the region for electrical contact through the dopant source to form the polycrystalline contact region, thereby to make it possible to omit the patterning process such as etching processing for providing a contact hole.
摘要翻译：在制造根据本发明的半导体器件的方法中，在衬底上形成半导体膜，并且形成绝缘膜以覆盖半导体膜。然后，在绝缘膜上布置掺杂剂源，然后通过掺杂源用高能束照射用于电接触的区域。因此，照射区域中的绝缘体膜和半导体膜被熔化，以形成从其中掺杂的掺杂剂源提供的杂质的多晶接触区域。因此，高能束被照射到通过掺杂剂源进行电接触的区域以形成多晶接触区域，从而可以省略图案化处理，例如用于提供接触孔的蚀刻处理。

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