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41. 发明授权

US4375085A Dense electrically alterable read only memory 失效
标题翻译：密集电可更改的只读存储器
公开(公告)号：US4375085A
公开(公告)日：1983-02-22
申请号：US221958
申请日：1981-01-02
申请人： Gary D. Grise , Ning Hsieh , Howard L. Kalter , Chung H. Lam
发明人： Gary D. Grise , Ning Hsieh , Howard L. Kalter , Chung H. Lam
IPC分类号： G11C14/00 , G11C11/34 , G11C16/04 , G11C17/00 , H01L21/8247 , H01L27/10 , H01L29/788 , H01L29/792 , G11C11/40
CPC分类号： G11C16/0433
摘要： This invention provides an improved electrically alterable read only memory system which includes a semiconductor substrate having a diffusion region therein defining one end of a channel region, a control plate, a floating plate separated from the channel region by a thin dielectric layer and disposed between the control plate and the channel region and means for transferring charge to and from the floating plate. A control gate is coupled to the channel region and is located between the diffusion region and the floating plate. The control gate may be connected to a word line and the diffusion region may be connected to a hit/sense line. The channel region is controlled by the word line and the presence or absence of charge on the floating plate. Thus, information may be read from a cell of the memory by detecting the presence or absence of charge stored in the inversion capacitor under the floating plate. The charge transfer means includes an enhanced conduction insulator and means for applying appropriate voltages to the control plate and to the control gate to transfer charge to and from the floating plate through the enhanced conduction insulator.
摘要翻译：本发明提供了一种改进的电可更换只读存储器系统，其包括其中限定通道区域的一端的扩散区域的半导体衬底，控制板，通过薄介电层与沟道区分离的浮置板，控制板和通道区域以及用于将电荷转移到浮动板和从浮动板传送电荷的装置。控制栅极耦合到沟道区并且位于扩散区和浮置板之间。控制栅极可以连接到字线，并且扩散区域可以连接到命中/感测线。通道区域由字线控制，浮板上有无电荷。因此，可以通过检测在浮动板下存储在反相电容器中的电荷的存在或不存在来从存储器的单元读取信息。电荷转移装置包括增强的导电绝缘体和用于向控制板和控制栅极施加适当电压的装置，以通过增强的导电绝缘体将电荷转移到浮动板和从浮动板传输电荷。

42. 发明授权

US4363110A Non-volatile dynamic RAM cell 失效
标题翻译：非易失性动态RAM单元
公开(公告)号：US4363110A
公开(公告)日：1982-12-07
申请号：US219285
申请日：1980-12-22
申请人： Howard L. Kalter , Harish N. Kotecha , Parsotam T. Patel
发明人： Howard L. Kalter , Harish N. Kotecha , Parsotam T. Patel
IPC分类号： H01L27/112 , G11C14/00 , H01L21/8246 , H01L21/8247 , H01L29/788 , H01L29/792 , G11C11/24 , G11C11/34
CPC分类号： G11C14/00
摘要： This invention provides improved non-volatile semiconductor memories which include a one device dynamic volatile memory circuit having a storage capacitor with a plate and a storage node coupled to a non-volatile device having a floating gate, a control gate and a voltage divider having first and second serially-connected capacitors, with the floating gate being disposed at the common point between the first and second capacitors. The plate of the storage capacitor is connected to a reference voltage source. The control gate is preferably capacitively coupled to the floating gate through the first capacitor which includesa dual charge or electron injector structure. The capacitance of the first capacitor has a value substantially less than that of the second capacitor.
摘要翻译：本发明提供了一种改进的非易失性半导体存储器，其包括一个具有板的存储电容器的一个器件动态易失性存储器电路，以及耦合到具有浮置栅极的非易失性器件的存储节点，一个控制栅极和一个具有第一和第二串联连接的电容器，其中浮动栅极设置在第一和第二电容器之间的公共点处。存储电容器的板连接到参考电压源。控制栅极优选地通过包括双电荷或电子注入器结构的第一电容器电容耦合到浮置栅极。第一电容器的电容值大大小于第二电容器的电容值。

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