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    • 41. 发明申请
    • Electronic circuit device and shelf for receiving electronic circuit boards of the electronic circuit device
    • 用于接收电子电路装置的电子电路板的电子电路装置和搁架
    • US20070230152A1
    • 2007-10-04
    • US11444336
    • 2006-06-01
    • Hiroaki Abe
    • Hiroaki Abe
    • H05K7/14
    • G06F1/185G06F13/409H05K7/1459
    • A shelf for receiving a plurality of electronic circuit boards, the electronic circuit boards having a structure where a connecter installing part is provided at a front end part of each of the boards and an optical transmitting and receiving element for optical communications between two or more of the electronic circuit boards is provided at a rear end part of each of the boards, includes a plurality of connectors arranged on a backboard of the shelf, the shelf having a right hexahedral-shaped configuration, the connectors detachably supporting the connecter installing parts of the electronic circuit boards; and a bonnet attached to a front surface opening part of the shelf so as to form a closed space, the bonnet having a mirror surface situated at a rear surface of the bonnet so that an optical communication signal being received and transmitted between two or more of the electronic circuit boards is reflected.
    • 一种用于接收多个电子电路板的搁板,其电连接器安装部分设置在每个电路板的前端部分的结构,以及用于两个或多个电路板之间的光通信的光发送和接收元件 电子电路板设置在每个板的后端部,包括布置在搁板的背板上的多个连接器,所述搁架具有右六面体形状,所述连接器可拆卸地支撑所述连接器的连接器安装部 电子电路板; 以及附接到所述搁架的前表面开口部分以形成封闭空间的发动机罩,所述发动机罩具有位于所述发动机罩的后表面处的镜表面,使得光通信信号在两个或多个 电子电路板被反射。
    • 44. 发明授权
    • Laser diode, semiconductor light-emitting device, and method of production thereof
    • 激光二极管,半导体发光装置及其制造方法
    • US06757311B2
    • 2004-06-29
    • US09922666
    • 2001-08-07
    • Hiroaki Abe
    • Hiroaki Abe
    • H01S500
    • H01S5/06216H01L2224/48091H01S5/0224H01S5/0425H01S5/0658H01S5/2231H01S5/4087H01L2924/00014
    • A laser diode capable of reducing an operating current and thereby improving long term reliability and able to be produced by a simpler process than in the prior art and a semiconductor light emitting device and a method of production thereof; wherein a first clad layer, an active layer, and a second clad layer are formed on a substrate, a third clad layer and a contact layer are formed on a current injection stripe region thereon, an electrode is formed so as to be connected to the second clad layer in regions other than the current injection stripe region and to be connected to the contact layer, and, at the time of emitting laser light from a laser light oscillation region by injection of a first current to the electrode via the contact layer by application of voltage, a second current which is smaller than the first current is injected in regions other than the current injection stripe region via the second clad layer, so that a laser diode is configured wherein currents at ends of the laser light oscillation region are controlled to generate self pulsation
    • 一种激光二极管,其能够降低工作电流,从而提高长期可靠性,并且能够通过比现有技术和半导体发光器件及其制造方法更简单的工艺生产; 其中在基板上形成第一包层,有源层和第二包层,在其上的电流注入条纹区域上形成第三覆层和接触层,形成电极以连接到 在与当前的注入条带区域不同的区域中的第二包覆层,并且连接到接触层,并且在通过经由接触层向电极注入第一电流而从激光振荡区域发射激光时, 施加电压时,比第一电流小的第二电流经由第二包层被注入到除了电流注入条纹区域之外的区域中,使得配置激光二极管,其中激光光振荡区域的端部处的电流被控制 产生自我脉动
    • 45. 发明授权
    • Semiconductor laser and method for producing same
    • 半导体激光器及其制造方法
    • US06633597B1
    • 2003-10-14
    • US09473654
    • 1999-12-29
    • Hiroaki Abe
    • Hiroaki Abe
    • H01S500
    • H01S5/162
    • A semiconductor laser enabling a higher output without lowering the performance of the laser such as its reliability, that is, a Fabry-Perot type semiconductor laser having, successively grown on a substrate, a first cladding layer of a first conductivity type, an active layer having at least one quantum well layer and at least two barrier layers, and a second cladding layer of a second conductivity type, a pair of facing end faces of said active layer constituting a resonator, wherein an impurity and holes due to the impurity are diffused in at least one region near the end faces of said active layer, and the quantum well layer and the barrier layers constituting said active layer are made mixed-crystals.
    • 一种半导体激光器,其能够在不降低其可靠性的激光器的性能的情况下实现更高的输出,即,在衬底上连续生长的法布里 - 珀罗型半导体激光器,具有第一导电类型的第一覆盖层,有源层 具有至少一个量子阱层和至少两个阻挡层,以及第二导电类型的第二覆层,所述有源层的一对相对端面构成谐振器,其中由杂质引起的杂质和空穴扩散 在所述有源层的端面附近的至少一个区域中,构成所述有源层的量子阱层和势垒层成为混晶。