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31. 发明专利

JPS5237740B1 失效
公开(公告)号：JPS5237740B1
公开(公告)日：1977-09-24
申请号：JP5472
申请日：1972-01-05
IPC分类号： G01R13/22 , G09G1/26 , G11C11/23 , H03K17/60 , G06K15/20 , G06F3/14 , H01J31/18

32. 发明专利

JPS5258329A METHOD OF USING STORAGE TUBE BY NONNDESTRUCTIVE READING 失效
公开(公告)号：JPS5258329A
公开(公告)日：1977-05-13
申请号：JP13272176
申请日：1976-11-04
申请人： THOMSON CSF
发明人： JIYATSUKU DOUSHIYANPU
IPC分类号： G11C11/23 , H01J31/58

33. 发明专利

JPS5168738A Hikariseidenkirokudenkyoku 失效
公开(公告)号：JPS5168738A
公开(公告)日：1976-06-14
申请号：JP14293574
申请日：1974-12-12
申请人： Fujitsu Ltd
发明人： KYOTA KOHEI , TASAI KUNIHIKO
IPC分类号： G11B9/08 , G11C11/23 , G11C11/42

34. 发明专利

JPS5028223A 失效
公开(公告)号：JPS5028223A
公开(公告)日：1975-03-22
申请号：JP7879173
申请日：1973-07-12
IPC分类号： H01J31/58 , G11C11/23

35. 发明专利

JPS4917054B1 失效
公开(公告)号：JPS4917054B1
公开(公告)日：1974-04-26
申请号：JP18365
申请日：1965-01-04
IPC分类号： G11C11/23 , G03G16/00 , G11C13/04 , H04N5/82 , G11B7/00

36. 发明专利

JPS494919A 失效
公开(公告)号：JPS494919A
公开(公告)日：1974-01-17
申请号：JP2952773
申请日：1973-03-15
IPC分类号： H01J29/39 , G11C11/23 , G11C13/04 , H01J31/28

38. 发明专利

JP2003141984A TUNNEL EMITTING DEVICE AND FORMING METHOD 审中-公开
公开(公告)号：JP2003141984A
公开(公告)日：2003-05-16
申请号：JP2002304828
申请日：2002-10-18
申请人： HEWLETT PACKARD CO
发明人： RAMAMOORTHI SRIRAM , CHEN ZHIZANG
IPC分类号： H01J1/30 , G11C11/23 , H01J1/312 , H01J9/02 , H01J19/24 , H01J19/38 , H01J21/10 , H01J29/04 , H01J31/12
摘要： PROBLEM TO BE SOLVED: To provide a flat emitting device having a high energy current density that is capable of operating with high reliability in the environment of low degree of vacuum. SOLUTION: The emitting device comprises an electron supply layer and a tunnel layer formed on the electron supply layer. As an option, an insulating layer is formed on the electron supply layer and the insulating layer has an opening part that is demarcated in the region in which the tunnel layer is formed. A cathode layer is formed on the tunnel layer. A conductive layer is arranged partially on the cathode layer and partially, if there exists, on the insulating layer. The conductive layer demarcates an opening part for providing a surface for emitting energy of electron and/or photons. As an option, it is desirable that the emitting device is put to an annealing process and thereby the supply quantity of electrons that penetrate from the electron supply layer through the cathode layer is increased.

39. 发明专利

JPS5755591A Information recording method 失效
标题翻译：信息记录方法
公开(公告)号：JPS5755591A
公开(公告)日：1982-04-02
申请号：JP12930880
申请日：1980-09-19
申请人： Hitachi Ltd
发明人： MUNAKATA TADASUKE , YAGI KUNIHIRO , MIYAZAKI MASARU , YONEDA SHIYOUZOU
IPC分类号： G11C17/00 , G03C1/705 , G11B7/241 , G11B9/08 , G11B11/00 , G11C11/23 , G11C11/30 , G11C11/42 , G11C13/04 , H01L31/08 , H04N1/21
CPC分类号： H01L31/08 , G03C1/705 , G11B7/241 , G11B9/08 , G11B11/00 , G11B2007/2571 , G11B2007/25715 , G11C11/23 , G11C13/04 , H04N1/2108
摘要： PURPOSE: To produce in an easy process a recording medium which is capable of the recording with high denisity, by forming an oxidized film on a semiconductor single substrate made of GaAs or CdS and irradiating an electron beam to a specific region on the substrate to reduce the photovoltage on the surface of the specific region.
CONSTITUTION: An oxidized film 12 is formed on a semiconductor single substrate 3 made of GaAs or CdS, and then a light beam hν is irradiated on the film 12. Thus the surface of the film 12 is electrically carged negatively owing to an electric field caused by the surface potential; while the rear surface of the substrate 3 is electrically charged positively. Then the surface photovoltage is produced between the upper and rear surfaces of the substrate 3. Under such conditions, an electron beam is irradiated to a specific region on the substrate 3 to cause the impairment of irradiation. As a result, the surface photovoltage can be extremely reduced at the impaired area although the beam hν is irradiated there. Accordingly the output can be greatly reduced for the surface photovoltage at the region where the electron beam is irradiated. In such way, a recording medium which is capable of the information recording with high density with use of an electron beam can be produced in a simple process under which just an oxidized film is formed.
COPYRIGHT: (C)1982,JPO&Japio
摘要翻译：目的：通过在由GaAs或CdS制成的半导体单个衬底上形成氧化膜并且将电子束照射到衬底上的特定区域，以便于以易于制造的方式制造能够高度记录的记录介质，以减少特定区域表面的光电压。构成：在由GaAs或CdS制成的半导体单片基板3上形成氧化膜12，然后将光束hnu照射在膜12上。因此，由于电场引起的膜12的表面被电气堵塞由表面电位; 同时衬底3的后表面被正电充电。然后在基板3的上表面和后表面之间产生表面光电压。在这种条件下，电子束被照射到基板3上的特定区域以造成照射损坏。结果，尽管在其上照射光束hnu，但是在损伤区域处的表面光电压可以极大地降低。因此，对于电子束照射的区域的表面光电压，可以大大降低输出。以这样的方式，可以在仅形成氧化膜的简单工艺中制造能够利用电子束进行高密度信息记录的记录介质。

40. 发明专利

JPS566107B1 失效
公开(公告)号：JPS566107B1
公开(公告)日：1981-02-09
申请号：JP6672873
申请日：1973-06-13
IPC分类号： H01J31/08 , G11C11/23 , H01J31/12 , H01J31/60

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