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31. 发明公开

KR1020110021406A 발광소자 및 이의 제조방법 有权
标题翻译：发光装置及其制造方法
公开(公告)号：KR1020110021406A
公开(公告)日：2011-03-04
申请号：KR1020090079189
申请日：2009-08-26
申请人： 삼성전자주식회사
发明人： 김준연 , 민복기 , 홍현기 , 이재원
IPC分类号： H01L33/10 , H01L33/12
CPC分类号： H01L33/007 , B82Y20/00 , H01L33/0075 , H01L33/12 , H01L33/32 , H01L33/46 , H01L2933/0025 , Y10S977/893 , Y10S977/95
摘要： PURPOSE: A light emitting apparatus and a manufacturing method thereof are provided to improve the light extraction efficiency by reducing the light absorption of a silicon substrate by comprising a reflective buffer layer including a distributed brag reflection layer. CONSTITUTION: A metallic buffer layer(132) is formed on a silicon substrate(110). A patterned distributed Brag reflector layer(134) is formed on the metallic buffer layer. The metallic buffer layer is patterned in the same pattern as the distributed Bragg reflector layer. An XY material layer(136) is formed on the patterned distributed Bragg reflector layer.
摘要翻译：目的：提供一种发光装置及其制造方法，通过包括具有分散式吹塑反射层的反射缓冲层，通过降低硅衬底的光吸收来提高光提取效率。构成：在硅衬底（110）上形成金属缓冲层（132）。在金属缓冲层上形成图形分布的布拉格反射层（134）。金属缓冲层以与分布式布拉格反射层相同的图案形成图案。在图案化分布式布拉格反射层上形成XY材料层（136）。

32. 发明申请

WO2015031835A1 AIR STABLE INFRARED PHOTODETECTORS FROM SOLUTION-PROCESSED INORGANIC SEMICONDUCTORS 审中-公开
标题翻译：来自解决方案的无机半导体的空气稳定的红外光电二极管
公开(公告)号：WO2015031835A1
公开(公告)日：2015-03-05
申请号：PCT/US2014/053546
申请日：2014-08-29
申请人： UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.
发明人： SO, Franky , MANDERS, Jesse, Robert , CHEN, Song , KLUMP, Erik, D. , LAI, Tzhung-Han , TSANG, Sai-Wing
IPC分类号： H01L31/0352
CPC分类号： H01L31/035218 , B82Y20/00 , B82Y40/00 , H01L31/02165 , H01L31/0296 , H01L31/0324 , H01L31/101 , H01L31/105 , H01L31/109 , H01L31/18 , Y10S977/774 , Y10S977/813 , Y10S977/893 , Y10S977/954
摘要： A photodetector has a photoactive layer of semiconducting inorganic nanoparticles positioned between a hole transport electron blocking layer of a first metal oxide and an electron transport hole blocking layer of a second metal oxide. The nanoparticles are responsive to electromagnetic radiation in at least the infrared region of the spectrum. The first metal oxide can be NiO, and the second metal oxide can be ZnO or TiO 2 . The metal oxide layers render the photodetector stable in air, even in the absence of an encapsulating coating around the photodetector. The photodetector has a P-I-N structure.
摘要翻译：光电检测器具有位于第一金属氧化物的空穴传输电子阻挡层和第二金属氧化物的电子传输空穴阻挡层之间的半导体无机纳米颗粒的光敏层。纳米颗粒至少在光谱的红外区域响应于电磁辐射。第一金属氧化物可以是NiO，第二金属氧化物可以是ZnO或TiO 2。即使在光电检测器周围没有封装涂层，金属氧化物层也使得光电检测器在空气中稳定。光检测器具有P-I-N结构。

33. 发明申请

WO2008073767A3 METHODS OF FILLING A SET OF INTERSTITIAL SPACES OF A NANOPARTICLE THIN FILM WITH A DIELECTRIC MATERIAL 审中-公开
标题翻译：用介电材料填充纳米薄膜的一组间隔空间的方法
公开(公告)号：WO2008073767A3
公开(公告)日：2008-08-28
申请号：PCT/US2007086432
申请日：2007-12-05
申请人： INNOVALIGHT INC , LEMMI FRANCESCO , ROGOJINA ELENA V , YU PINGRONG , JURBERGS DAVID , ANTONIADIS HOMER , KELMAN MAXIM
发明人： LEMMI FRANCESCO , ROGOJINA ELENA V , YU PINGRONG , JURBERGS DAVID , ANTONIADIS HOMER , KELMAN MAXIM
IPC分类号： H01L21/208
CPC分类号： H01L21/02601 , H01L21/0237 , H01L21/02524 , H01L21/02529 , H01L21/02532 , H01L21/02628 , H01L21/02667 , Y10S977/892 , Y10S977/893
摘要： A method of forming a densified nanoparticle thin film is disclosed. The method includes positioning a substrate in a first chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30°C and about 300°C, and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed; and positioning the substrate in a second chamber, the second chamber having a pressure of between about 1 x 10 -7 Torr and about 1 x 10 -4 Torr. The method further includes depositing on the porous compact a dielectric material; wherein the densified nanoparticle thin film is formed.
摘要翻译：公开了一种形成致密化纳米颗粒薄膜的方法。该方法包括将基板定位在第一室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且多孔压块形成; 以及将所述衬底定位在第二腔室中，所述第二腔室具有介于约1×10 -7乇和约1×10 -4乇之间的压力。该方法还包括在多孔压块上沉积电介质材料; 其中形成致密的纳米颗粒薄膜。

34. 发明申请

WO2007056533A1 METALLIC QUANTUM DOTS FABRICATED BY A SUPERLATTICE STRUCTURE 审中-公开
标题翻译：金属量子力学由超声波结构组成
公开(公告)号：WO2007056533A1
公开(公告)日：2007-05-18
申请号：PCT/US2006/043681
申请日：2006-11-08
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. , TONG, William M, , ISLAM, M Saiful,
发明人： TONG, William M, , ISLAM, M Saiful,
IPC分类号： H01L49/00 , G01N21/65
CPC分类号： H01L49/006 , B82Y10/00 , G01N21/658 , Y10S977/888 , Y10S977/893
摘要： A method for forming quantum dots (11 ) includes forming a superlattice structure (18) that includes at least one nanostrip (40, 42) protruding from the superlattice structure, providing a quantum dot substrate (14), transferring the at least one nanostrip to the quantum dot substrate, and removing at least a portion of the at least one nanostrip from the substrate. The superlattice structure is formed by providing a superlattice substrate (32), forming alternating layers of first and second materials (20, 24) on the substrate to form a stack, cleaving the stack to expose the alternating layers, and etching the exposed alternating layers with an etchant that etches the second material at a greater rate than the first to form the at least one nanostrip.
摘要翻译：一种用于形成量子点（11）的方法包括形成超晶格结构（18），其包括从超晶格结构突出的至少一个纳米线（40,42），提供量子点衬底（14），将所述至少一个纳米片转移到所述量子点衬底，以及从所述衬底去除所述至少一个纳米线的至少一部分。超晶格结构通过提供超晶格衬底（32）形成，在衬底上形成第一和第二材料（20,24）的交替层以形成堆叠，切割堆叠以暴露交替层，以及蚀刻暴露的交替层其中蚀刻剂以比第一材料更高的速率蚀刻第二材料以形成至少一个纳米线。

35. 发明申请

WO99033106A1 PLASTIC COMPOSITE BODY 审中-公开
标题翻译：塑料复合体
公开(公告)号：WO99033106A1
公开(公告)日：1999-07-01
申请号：PCT/DE1998/003661
申请日：1998-12-14
IPC分类号： C08L101/00 , C08J5/12 , C08K3/00 , H01L21/52 , H01L23/29 , H01L23/31 , H01L23/495
CPC分类号： H01L23/295 , C08J5/124 , C08K3/01 , H01L23/49513 , H01L2924/0002 , Y10S977/779 , Y10S977/893 , Y10T428/31678 , H01L2924/00
摘要： An integrated circuit has a lead frame to which a chip made of a semiconductor material is secured by an adhesive layer. The adhesive layer contains at least one filler and one plastic material. The filler comprises nanoscale, in particular spherical particles produced by a condensation process and which can be conductive or insulating. It is also possible to provide the chip with a plastic sheath that contains such fillers.
摘要翻译：集成驱动器电路具有引线框，在其上具有粘合剂层，将芯片由半导体材料安装。所述粘合剂层包含至少一种填充剂，以及塑料。纳米级填料包括，特别是球形，并用其可以是导电的或绝缘的冷凝过程的颗粒制备。另外，也可以提供对由塑料制成的芯片中的一个服务，其具有这样的填料。

36. 发明专利

JP4428921B2 Nanostructures, electronic device, and a method of manufacturing the same 有权
公开(公告)号：JP4428921B2
公开(公告)日：2010-03-10
申请号：JP2002363128
申请日：2002-12-13
申请人：キヤノン株式会社
发明人：透田 , 和彦福谷
IPC分类号： H01L29/06 , B82B1/00 , B82B3/00 , C30B29/60 , H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792 , H01L39/22 , H01L39/24 , H01L51/30
CPC分类号： C30B29/60 , B82Y10/00 , B82Y30/00 , H01L29/42332 , H01L29/7888 , H01L2924/0002 , Y10S977/762 , Y10S977/893 , H01L2924/00
摘要： Cylinders having Al as a major constituent are orderly arrayed in an (Si, Ge) matrix. In a nanostructure in the form of a mixture film having a plurality of cylinders having Al as a major constituent, and a matrix region surrounding the plurality of cylinders and having Si and/or Ge as a major constituent, the total amount of Si and Ge is in the range from 20 to 70 atomic % in the mixture film, the cylinders are orderly arrayed, the diameter of the cylinders is in the range from 1 to 30 nm, and the interval between the cylinders is 30 nm or less.

37. 发明专利

JP2006332249A Electronic device 有权
标题翻译：电子设备
公开(公告)号：JP2006332249A
公开(公告)日：2006-12-07
申请号：JP2005152465
申请日：2005-05-25
申请人： Canon Inc , キヤノン株式会社
发明人： MIYATA HIROKATSU , ISHIDA YOHEI , KAWASHIMA YASUHIRO
IPC分类号： H01L29/786 , H01L21/336 , H01L51/05
CPC分类号： H01L51/0512 , Y10S977/893
摘要： PROBLEM TO BE SOLVED: To produce a new organic semiconductor electronic device capable of utilizing effectively the main chain conduction of a conjugate high molecular compound having semiconductive property. SOLUTION: An electronic element comprises: a pair of electrodes 13 and 14 formed on a substrate 11; a meso porous material thin film 15 wherein tube-like meso fine pores 16 with a substantially uniform diameter are formed, and the alignment is controlled in a desirable direction formed so that it can be contacted between the electrodes 13 and 14; a conjugate high molecular compound held in the tube-like fine pores 16; and a third electrode formed so that it can be electrically insulated from the conjugate high molecular compound, and it can be contacted with the meso porous material thin film 15. The alignment direction of the tube-like fine pores 16 is in substantially parallel with the direction of an electric field when potential is impressed between a pair of electrodes 13 and 14. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：为了制造能够有效利用具有半导体性的共轭高分子化合物的主链导电性的新的有机半导体电子器件。电子元件包括：形成在基板11上的一对电极13和14; 形成具有基本均匀直径的管状中孔微细孔16的中孔多孔材料薄膜15，并且将该取向控制在形成为使得其可以在电极13和14之间接触的期望方向上; 保持在管状细孔16中的共轭高分子化合物; 以及第三电极，其形成为能够与共轭高分子化合物电绝缘，并且可以与介孔多孔材料薄膜15接触。管状细孔16的取向方向基本上与在一对电极13和14之间施加电位时的电场方向。（C）2007，JPO＆INPIT

38. 发明专利

JP2004202602A Method for manufacturing minute structural element, and method for manufacturing shape material 审中-公开
公开(公告)号：JP2004202602A
公开(公告)日：2004-07-22
申请号：JP2002372277
申请日：2002-12-24
申请人： Sony Corp , ソニー株式会社
发明人： SUMINO KOJI , MURAKAMI YOSUKE
IPC分类号： B82B3/00 , B01J23/75 , B01J37/02 , B01J37/03 , B01J37/34 , C01B31/02 , C23C16/44 , C23C16/48 , H01J9/02
CPC分类号： C30B25/18 , B01J37/34 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B32/18 , C30B29/02 , C30B29/602 , G11C2213/81 , H01J9/025 , Y10S977/842 , Y10S977/876 , Y10S977/893
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a minute structural element, by which a small hole is made on a much more minute scale in the environment where impurity is negligible, and the minute structural element, which is much more minute and has higher crystallinity, is manufactured by this small hole, and further to provide a method for manufacturing a shape material. SOLUTION: The method for manufacturing the minute structural element comprises processes for: forming a small hole 4 by irradiating a base body 1 to form the shape material 5 with a converged energy beam 3, and; growing the minute structural element 8 within the small hole 4. The method for manufacturing the shape material comprises a process for forming the small hole 4 by irradiating the base body 1 to form the shape material 5 with the converged energy beam 3. COPYRIGHT: (C)2004,JPO&NCIPI

39. 发明公开

EP3268981A4 QUANTUM DOTS WITH MULTIPLE INSULATOR COATINGS 有权转让
公开(公告)号：EP3268981A4
公开(公告)日：2018-07-04
申请号：EP16762453
申请日：2016-03-09
申请人： PACIFIC LIGHT TECH CORP , THEOBALD BRIAN , BERTRAM MATTHEW , ZHAO WEIWEN , KURTIN JUANITA N , PUETZ NORBERT
发明人： THEOBALD BRIAN , BERTRAM MATTHEW , ZHAO WEIWEN , KURTIN JUANITA N , PUETZ NORBERT
IPC分类号： H01L21/205 , C09C3/06
CPC分类号： H01L33/502 , B82Y20/00 , B82Y40/00 , C09C3/063 , Y10S977/774 , Y10S977/824 , Y10S977/893 , Y10S977/95
摘要： Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the nanocrystalline shell form a quantum dot. Fabrication further involves forming an insulator layer encapsulating the quantum dot to create a coated quantum dot, and forming an additional insulator layer on the coated quantum dot using an Atomic Layer Deposition (ALD) process.

40. 发明公开

EP3268981A1 QUANTUM DOTS WITH MULTIPLE INSULATOR COATINGS 有权转让
标题翻译：量子点与多个绝缘涂层
公开(公告)号：EP3268981A1
公开(公告)日：2018-01-17
申请号：EP16762453.5
申请日：2016-03-09
申请人： Pacific Light Technologies Corp. , Theobald, Brian , Bertram, Matthew , Zhao, Weiwen , Kurtin, Juanita N. , Puetz, Norbert
发明人： THEOBALD, Brian , BERTRAM, Matthew , ZHAO, Weiwen , KURTIN, Juanita N. , PUETZ, Norbert
IPC分类号： H01L21/205
CPC分类号： H01L33/502 , B82Y20/00 , B82Y40/00 , Y10S977/774 , Y10S977/824 , Y10S977/893 , Y10S977/95
摘要： Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the nanocrystalline shell form a quantum dot. Fabrication further involves forming an insulator layer encapsulating the quantum dot to create a coated quantum dot, and forming an additional insulator layer on the coated quantum dot using an Atomic Layer Deposition (ALD) process.

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