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31. 发明授权

US6037188A Method of manufacturing photosensitive semiconductor device 失效
标题翻译：光敏半导体器件的制造方法
公开(公告)号：US6037188A
公开(公告)日：2000-03-14
申请号：US184837
申请日：1998-11-03
申请人： Hiroyasu Torazawa
发明人： Hiroyasu Torazawa
IPC分类号： H01L31/0203 , H01L31/12 , H01L31/14 , H01L31/16 , H01L31/167 , H01L33/54 , H01L33/56 , H01L33/62 , H01L21/00
CPC分类号： H01L31/162 , H01L31/0203 , H01L31/143 , H01L31/167 , H01L2224/48091 , H01L2224/48247
摘要： The present invention provides a photosensitive semiconductor device comprising a sealing body composed of a resin material for sealing photosensitive semiconductor elemental devices, a inside of the sealing body having a light-transmissive property, a surface of the sealing body composed of the resin material containing carbon.Owing to the above-described construction, the present invention can provide a photosensitive semiconductor device which eliminates the need for a mold resin forming process for forming only a lightproof film and is capable of simplifying a manufacturing process thereof and being rendered compact in size.
摘要翻译：本发明提供一种感光性半导体装置，其特征在于，具有密封体，该密封体由用于密封感光性半导体元件的树脂材料，具有透光性的密封体的内部，由含有碳的树脂材料构成的密封体的表面。由于上述结构，本发明可以提供一种光敏半导体器件，其不需要仅形成防光薄膜的模制树脂形成工艺，并且能够简化其制造工艺并使其尺寸变小。

32. 发明申请

US20170062628A1 SENSOR CHIP PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：传感器芯片包装结构及其制造方法
公开(公告)号：US20170062628A1
公开(公告)日：2017-03-02
申请号：US15096601
申请日：2016-04-12
申请人： PIXART IMAGING INC.
发明人： CHI-CHIH SHEN , YEN-HSIN CHEN , YI-CHANG CHANG
IPC分类号： H01L31/0203 , H01L31/02 , H01L31/18 , H01L31/14
CPC分类号： H01L31/0203 , H01L31/02005 , H01L31/143 , H01L31/18 , H01L31/1876 , H01L2224/48091 , H01L2924/10155 , H01L2924/00014
摘要： A sensor chip package structure and a manufacturing method thereof are provided. The sensor chip package structure includes a substrate, a sensor chip and a wiring layer. The sensor chip is mounted on the substrate and has a top surface and a concave portion concaved from the top surface. The sensor chip has an active region formed on the top surface and the concave portion is located at one side of the active region. The concave portion has a depth of 100 μm to 400 μm. The wiring layer is disposed on the sensor chip and electrically connected to the active region. At least a portion of the wiring layer extends from the active region along a sidewall of the concave portion to a bottom surface of the concave portion.
摘要翻译：提供一种传感器芯片封装结构及其制造方法。传感器芯片封装结构包括基板，传感器芯片和布线层。传感器芯片安装在基板上，具有从上表面凹下的顶面和凹部。传感器芯片具有形成在顶表面上的有源区，凹部位于有源区的一侧。凹部的深度为100μm〜400μm。布线层设置在传感器芯片上并电连接到有源区。布线层的至少一部分从活性区域沿着凹部的侧壁延伸到凹部的底面。

33. 发明授权

US08816361B1 Structure combining solar cell and light emitting element 有权
标题翻译：结合太阳能电池和发光元件的结构
公开(公告)号：US08816361B1
公开(公告)日：2014-08-26
申请号：US13918325
申请日：2013-06-14
申请人： Phecda Technology Co., Ltd
发明人： Yong-Fa Huang
IPC分类号： H01L31/153 , H01L31/167 , H01L31/052 , H01L31/0236 , H01L31/14 , H01L31/0232
CPC分类号： H01L31/02327 , H01L25/167 , H01L31/02366 , H01L31/0392 , H01L31/056 , H01L31/125 , H01L31/143 , H01L31/153 , H01L33/00 , H01L2924/0002 , Y02E10/52 , H01L2924/00
摘要： Disclosed is a structure combining a solar cell and a light-emitting element. The structure includes a light-emitting device having a substrate and a light-emitting structure disposed on the first surface of the substrate. The substrate includes a plurality of cones formed on a second surface opposite to the first surface. The structure also includes a first conductive layer, disposed on the second surface, a power convention layer disposed on the first conductive layer, a second conductive layer disposed on the power conversion layer, and a patterned transparent layer disposed on the second conductive layer. The patterned transparent layer includes a surface consisting of a plurality of cones and disposed on a side opposite to the second conductive layer.
摘要翻译：公开了一种结合太阳能电池和发光元件的结构。该结构包括具有衬底和设置在衬底的第一表面上的发光结构的发光器件。衬底包括形成在与第一表面相对的第二表面上的多个锥体。该结构还包括设置在第二表面上的第一导电层，设置在第一导电层上的功率常规层，设置在功率转换层上的第二导电层和设置在第二导电层上的图案化透明层。图案化透明层包括由多个锥体组成并且设置在与第二导电层相对的一侧上的表面。

34. 发明申请

US20130327931A1 PACKAGE STRUCTURE OF OPTICAL APPARATUS 有权
标题翻译：光学装置的包装结构
公开(公告)号：US20130327931A1
公开(公告)日：2013-12-12
申请号：US13865640
申请日：2013-04-18
申请人： En-Feng Hsu , Nien-Tse Chen
发明人： En-Feng Hsu , Nien-Tse Chen
IPC分类号： G01V8/12
CPC分类号： G01V8/12 , G01S7/4813 , G01S17/026 , H01L31/02005 , H01L31/0203 , H01L31/02162 , H01L31/02164 , H01L31/143 , H01L2224/16225
摘要： The present invention provides a package structure of an optical apparatus which includes a substrate, a light emitting device, a light sensing device, and a light barrier member. The light emitting device is disposed on the substrate and electrically connected to the substrate. The light emitting device is for emitting light. The light sensing device is disposed on the substrate and is a chip scale package (CSP) device. The light sensing device is for receiving light reflected by an object. The light barrier member is disposed around a periphery of the light sensing device.
摘要翻译：本发明提供一种光学装置的封装结构，其包括衬底，发光器件，光感测器件和光阻挡部件。发光器件设置在衬底上并与衬底电连接。发光装置用于发光。光感测装置设置在基板上，并且是芯片级封装（CSP）装置。光检测装置用于接收由物体反射的光。遮光构件设置在光感测装置的周围。

35. 发明申请

US20090242935A1 MONOLITHICALLY INTEGRATED PHOTODETECTORS 有权
标题翻译：单一集成的光电复印机
公开(公告)号：US20090242935A1
公开(公告)日：2009-10-01
申请号：US11591658
申请日：2006-11-01
申请人： Eugene A. Fitzgerald
发明人： Eugene A. Fitzgerald
IPC分类号： H01L31/0336 , H01L31/00
CPC分类号： H01L27/14601 , H01L21/0245 , H01L21/0251 , H01L21/76254 , H01L21/8258 , H01L27/0605 , H01L27/144 , H01L27/1446 , H01L27/14683 , H01L27/15 , H01L27/156 , H01L31/0328 , H01L31/143 , H01L31/162 , H01L2924/0002 , Y10S438/933 , H01L2924/00
摘要： Methods and structures for monolithically integrating monocrystalline silicon and monocrystalline non-silicon materials and devices are provided. In one structure, a monolithically integrated semiconductor device structure comprises a silicon substrate and a first monocrystalline semiconductor layer disposed over the silicon substrate, wherein the first monocrystalline semiconductor layer has a lattice constant different from a lattice constant of relaxed silicon. The structure further includes an insulating layer disposed over the first monocrystalline semiconductor layer in a first region and a monocrystalline silicon layer disposed over the insulating layer in the first region. The structure includes at least one silicon-based photodetector comprising an active region including at least a portion of the monocrystalline silicon layer. The structure also includes a second monocrystalline semiconductor layer disposed over at least a portion of the first monocrystalline semiconductor layer in a second region and absent from the first region, wherein the second monocrystalline semiconductor layer has a lattice constant different from the lattice constant of relaxed silicon. The structure includes at least one non-silicon photodetector comprising an active region including at least a portion of the second monocrystalline semiconductor layer.
摘要翻译：提供了单晶硅和单晶非硅材料和器件单片集成的方法和结构。在一种结构中，单片集成半导体器件结构包括硅衬底和设置在硅衬底上的第一单晶半导体层，其中第一单晶半导体层具有与松弛硅的晶格常数不同的晶格常数。该结构还包括设置在第一区域中的第一单晶半导体层上的绝缘层和设置在第一区域中的绝缘层上的单晶硅层。该结构包括至少一个硅基光电检测器，其包括至少部分单晶硅层的有源区。该结构还包括第二单晶半导体层，其设置在第二区域中的第一单晶半导体层的至少一部分上且不存在于第一区域中，其中第二单晶半导体层具有与松弛硅的晶格常数不同的晶格常数。该结构包括至少一个非硅光电检测器，其包括包括第二单晶半导体层的至少一部分的有源区。

36. 发明授权

US07535089B2 Monolithically integrated light emitting devices 有权
标题翻译：单片集成发光器件
公开(公告)号：US07535089B2
公开(公告)日：2009-05-19
申请号：US11591657
申请日：2006-11-01
申请人： Eugene A. Fitzgerald
发明人： Eugene A. Fitzgerald
IPC分类号： H01L23/06
CPC分类号： H01L27/14601 , H01L21/0245 , H01L21/0251 , H01L21/76254 , H01L21/8258 , H01L27/0605 , H01L27/144 , H01L27/1446 , H01L27/14683 , H01L27/15 , H01L27/156 , H01L31/0328 , H01L31/143 , H01L31/162 , H01L2924/0002 , Y10S438/933 , H01L2924/00
摘要： Methods and structures for monolithically integrating monocrystalline silicon and monocrystalline non-silicon materials and devices are provided. In one structure, a monolithically integrated semiconductor device structure comprises a silicon substrate and a first monocrystalline semiconductor layer disposed over the silicon substrate, wherein the first monocrystalline semiconductor layer has a lattice constant different from a lattice constant of relaxed silicon. The structure further includes an insulating layer disposed over the first monocrystalline semiconductor layer in a first region and a monocrystalline silicon layer disposed over the insulating layer in the first region. The structure includes at least one silicon-based electronic device including an element including at least a portion of the monocrystalline silicon layer. The structure also includes a second monocrystalline semiconductor layer disposed over at least a portion of the first monocrystalline semiconductor layer in a second region and absent from the first region, wherein the second monocrystalline semiconductor layer has a lattice constant different from the lattice constant of relaxed silicon. The structure includes at least one III-V light-emitting device including an active region including at least a portion of the second monocrystalline semiconductor layer.
摘要翻译：提供了单晶硅和单晶非硅材料和器件单片集成的方法和结构。在一种结构中，单片集成半导体器件结构包括硅衬底和设置在硅衬底上的第一单晶半导体层，其中第一单晶半导体层具有与松弛硅的晶格常数不同的晶格常数。该结构还包括设置在第一区域中的第一单晶半导体层上的绝缘层和设置在第一区域中的绝缘层上的单晶硅层。该结构包括至少一个硅基电子器件，其包括至少部分单晶硅层的元件。该结构还包括第二单晶半导体层，其设置在第二区域中的第一单晶半导体层的至少一部分上且不存在于第一区域中，其中第二单晶半导体层具有与松弛硅的晶格常数不同的晶格常数。该结构包括至少一个III-V发光器件，其包括包括第二单晶半导体层的至少一部分的有源区。

37. 发明申请

US20080164481A1 Image display apparatus with ambient light sensing system 审中-公开
标题翻译：具有环境光感测系统的图像显示装置
公开(公告)号：US20080164481A1
公开(公告)日：2008-07-10
申请号：US11987852
申请日：2007-12-05
申请人： Mitsuharu Tai , Hiroshi Kageyama
发明人： Mitsuharu Tai , Hiroshi Kageyama
IPC分类号： H01L33/00
CPC分类号： H01L31/143 , G02F1/13318 , G09G3/3406 , G09G2320/0666 , G09G2360/145 , H01L27/1446 , H01L31/02162 , H01L31/03682 , H01L31/03762 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02P70/521
摘要： An image display apparatus with an illuminance sensor, where the packaging cost, mechanical reliability due to packaging, and product yield are maintained. In the same semiconductor film as a thin-film-transistor (TFT) consisting of a pixel formed over an insulating substrate constituting a pixel, plural photo-sensors composed of a TFT for detecting light which has different detecting wavelength bands, and a signal processing circuit for generating a signal which controls the brightness of the pixel on the basis of the output of the photo-sensor are formed. The photo-sensor detects light energy of different wavelength bands by using a filter having a different film thickness of the semiconductor film or a different light transmission band. Ambient illuminance is detected by processing the output of each sensor in the signal processing circuit. The detected signal is fed back to the brightness control of the pixel.
摘要翻译：具有照度传感器的图像显示装置，其中保持包装成本，由包装引起的机械可靠性和产品产量。在与由构成像素的绝缘基板上形成的像素构成的薄膜晶体管（TFT）相同的半导体膜中，由用于检测具有不同检测波长带的光的TFT构成的多个光电传感器以及信号处理形成用于基于光传感器的输出来生成控制像素的亮度的信号的电路。光传感器通过使用具有不同的半导体膜的膜厚的滤光器或不同的透光带来检测不同波长带的光能。通过处理信号处理电路中的每个传感器的输出来检测环境照度。检测到的信号被反馈到像素的亮度控制。

38. 发明授权

US06483094B1 Solid state optical shutter 有权
标题翻译：固态光学快门
公开(公告)号：US06483094B1
公开(公告)日：2002-11-19
申请号：US09402854
申请日：2000-01-03
申请人： Giora Yahav , Gavriel J. Iddan
发明人： Giora Yahav , Gavriel J. Iddan
IPC分类号： H01J4014
CPC分类号： H01L31/143
摘要： A solid-state optoelectronic shutter having an input and an output, comprising a semiconductor material, having formed therein or thereon: a planar photodiode (24), having a planar surface, and optically communicating with the input; a planar LED layer (26), having a planar surface substantially parallel to the planar photodiode, and optionally communicating with the output; and a planar gate layer (28), intermediate the planar photodiode and the planar LED.
摘要翻译：一种具有输入和输出的固态光电闸门，包括在其中或其上形成的半导体材料：平面光电二极管（24），具有平坦表面，并与输入端光学连通; 平面LED层（26），其平面表面基本上平行于平面光电二极管，并且可选地与输出端连通; 和平面栅极层（28），在平面光电二极管和平面LED之间。

39. 发明授权

US06177689B1 Photosensitive device having light transmissive sealing resin with carbonized outer surface 失效
标题翻译：具有透光密封树脂的感光装置具有碳化的外表面
公开(公告)号：US06177689B1
公开(公告)日：2001-01-23
申请号：US09348755
申请日：1999-07-07
申请人： Hiroyasu Torazawa
发明人： Hiroyasu Torazawa
IPC分类号： H01L2715
CPC分类号： H01L31/162 , H01L31/0203 , H01L31/143 , H01L31/167 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： A photosensitive semiconductor device includes a photocoupler sealed within a sealing body which is composed of a light-transmissive resin material. An outer surface of the sealing body is carbonized to block external light and thus minimized the adverse effects of noise.
摘要翻译：光敏半导体器件包括密封在由透光树脂材料构成的密封体内的光电耦合器。密封体的外表面被碳化以阻挡外部光，从而最小化噪声的不利影响。

40. 发明授权

US3891993A Semiconductor arrangement for the detection of light beams or other suitable electro-magnetic radiation 失效
标题翻译：用于检测光束或其他合适的电磁辐射的半导体装置
公开(公告)号：US3891993A
公开(公告)日：1975-06-24
申请号：US39904273
申请日：1973-09-20
申请人： LICENTIA GMBH
发明人： BENEKING HEINZ
IPC分类号： H01L31/14 , H01L31/153 , H01L15/00
CPC分类号： H01L31/153 , H01L31/143
摘要： A semiconductor arrangement for the detection of light beams or other suitable electromagnetic radiation comprises at least two regions of semiconductor material having different energy band gaps, one of which produces charge carriers in response to incident electromagnetic radiation and the other of which recombines the charge carriers to produce a light output.
摘要翻译：用于检测光束或其它合适的电磁辐射的半导体装置包括具有不同能带隙的至少两个半导体材料区域，其中一个区域响应于入射电磁辐射而产生电荷载流子，另一个区域将电荷载流子复合到产生光输出。

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