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31. 发明申请

WO2006078076A1 半導体素子接続用金線审中-公开
标题翻译：用于半导体器件连接的金线
公开(公告)号：WO2006078076A1
公开(公告)日：2006-07-27
申请号：PCT/JP2006/301384
申请日：2006-01-24
申请人：新日本製鐵株式会社 , 木村圭一 , 宇野智裕
发明人：木村圭一 , 宇野智裕
IPC分类号： H01L21/60
CPC分类号： B23K35/0261 , B23K35/3013 , C22C5/02 , C22F1/14 , H01L24/43 , H01L24/45 , H01L2224/43 , H01L2224/45015 , H01L2224/45144 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01011 , H01L2924/01012 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01057 , H01L2924/01058 , H01L2924/01059 , H01L2924/0106 , H01L2924/01063 , H01L2924/01064 , H01L2924/01065 , H01L2924/01066 , H01L2924/01067 , H01L2924/01068 , H01L2924/0107 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/01205 , H01L2924/01327 , H01L2924/04953 , H01L2924/10253 , H01L2924/01013 , H01L2924/01004 , H01L2924/01062 , H01L2924/01203 , H01L2924/01204 , H01L2924/01003 , H01L2924/01039 , H01L2924/01069 , H01L2924/00 , H01L2924/013 , H01L2224/48 , H01L2924/01006
摘要：プラセオジウムを０．０００４質量％以上０．０２質量％以下の範囲で含有することを基本として、ボンディング特性を考慮して、ベリリウムまたはアルミニウムもしくはその両方が限定した範囲で含有し、更に、金線内に生成する析出物を考慮して、補助的な添加元素としてカルシウム、ランタン、セリウム、ネオジウム、サマリウムが限定した範囲で含有する半導体素子接続用金線。
摘要翻译：公开了用于半导体器件连接的金线，其基本上含有不少于0.0004质量％且不超过0.02质量％的镨。考虑到结合特性，这种用于半导体器件连接的金线还分别含有量在有限范围内的铍和铝中的一种或两种，并且还分别含有钙，镧，铈，钕和钐作为补充添加元素考虑到在餐丝中形成的沉积物，其量在有限范围内。

32. 发明申请

WO2007111248A1 半導体素子接続用金線审中-公开
标题翻译：金线用于半导体元件连接
公开(公告)号：WO2007111248A1
公开(公告)日：2007-10-04
申请号：PCT/JP2007/056011
申请日：2007-03-23
申请人：新日鉄マテリアルズ株式会社 , 株式会社日鉄マイクロメタル , 木村圭一 , 宇野智裕 , 山田隆 , 西林景仁
发明人：木村圭一 , 宇野智裕 , 山田隆 , 西林景仁
IPC分类号： H01L21/60 , C22C5/02
CPC分类号： C22C5/02 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/43 , H01L2224/45015 , H01L2224/45144 , H01L2224/48247 , H01L2224/4851 , H01L2224/48624 , H01L2224/48639 , H01L2224/85205 , H01L2224/85206 , H01L2224/85439 , H01L2924/00011 , H01L2924/01003 , H01L2924/01011 , H01L2924/01014 , H01L2924/01018 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01057 , H01L2924/01058 , H01L2924/01059 , H01L2924/01067 , H01L2924/0107 , H01L2924/01072 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/01202 , H01L2924/01205 , H01L2924/01327 , H01L2924/10253 , H01L2924/20752 , H01L2924/01024 , H01L2924/01004 , H01L2924/0106 , H01L2924/01062 , H01L2924/00014 , H01L2924/00 , H01L2924/013 , H01L2924/20751 , H01L2924/00015 , H01L2924/00013 , H01L2924/01006
摘要：本発明は、高い強度と高い接合性を有する半導体素子接続用金線を提供する。カルシウム、希土類元素から選ばれる元素群と、チタン、バナジウム、クロム、ハフニウム、ニオブ、タングステン、ジルコニウムから選ばれる元素群から、それぞれ１種以上の元素を限定した範囲で含有する半導体接続用金線である。更に、適量のパラジウムやベリリウムを含有させることが好ましい。本発明はこれにより、カルシウム、希土類元素を含有することで金線の強度、ヤング率を向上させると共に、チタン等を含有することで、カルシウム、希土類元素によるファースト接合時の圧着ボールの圧着形状の真円性悪化を改善する。半導体の小型化、狭電極パッドピッチ化に対応する機械的特性と接合性が両立したボンディングワイヤとすることができるので、半導体装置製造の作業性、製品歩留りの改善に貢献するものである。
摘要翻译：本发明提供一种具有高强度和高粘合性的半导体元件连接用金线。用于半导体连接的金线包括选自钙和稀土元素的一组元素中的至少一种元素的有限量，以及选自钛，钒，铬，铪，铌，钨和锆。优选并入适量的钯或铍。钙和稀土元素的结合可以提高金线的强度和年龄模量，并且钛等的并入可以减少压合粘合球的压合形状的圆度与钙和稀有金属的快速结合地球元素由于可以实现能够同时实现能够应对半导体尺寸减小的要求并降低电极焊盘间距的能够同时实现机械特性和结合性的接合线，从而提高半导体器件的制造和产品产率的可加工性可以实现。

33. 发明申请

WO02054491A2 CU-PAD/BONDED/CU-WIRE WITH SELF-PASSIVATING CU-ALLOYS 审中-公开
标题翻译： CU-PAD / BONDED / CU-WIRE WITH SELF-PASSIVATING CU-ALLOYS
公开(公告)号：WO02054491A2
公开(公告)日：2002-07-11
申请号：PCT/US0143960
申请日：2001-11-14
申请人： INFINEON TECHNOLOGIES CORP
发明人： BARTH HANS-JOACHIM
IPC分类号： H01L21/60 , H01L23/485 , H01L23/49 , H01L23/488
CPC分类号： H01L24/85 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05006 , H01L2224/05073 , H01L2224/05546 , H01L2224/05556 , H01L2224/05624 , H01L2224/05647 , H01L2224/45124 , H01L2224/45147 , H01L2224/45565 , H01L2224/45647 , H01L2224/48463 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48764 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48864 , H01L2224/84539 , H01L2224/84544 , H01L2224/84564 , H01L2224/85011 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/85564 , H01L2224/85948 , H01L2924/00011 , H01L2924/01005 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/014 , H01L2924/05042 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/01003 , H01L2924/00014 , H01L2224/78 , H01L2224/48824 , H01L2924/00 , H01L2924/013 , H01L2924/01006
摘要： In an integrated circuit structure, the improvement comprising a wire bonded Cu-pad with Cu-wire component, wherein the Cu-pad Cu-wire component is characterized by self-passivation, low resistance, high bond strength, and improved resistance to oxidation and corrosion, the Cu-pad Cu-wire component comprising: a metallization-line; a liner separating the metallization line and a Cu-alloysurrounding a Cu-pad; a dielectric surrounding the liner; anda Cu-pad bonded to a Cu-alloy wire; the Cu-wire component being characterized by self-passivation areas on: a) a dopant rich interface in between the Cu-alloy and liner; b) a surface of the Cu-pad; c) a surface of the bond between the Cu-pad and the Cu-alloy wire; and d) a surface of the Cu-alloy wire.
摘要翻译：在集成电路结构中，改进包括具有铜丝成分的引线接合铜焊盘，其中Cu焊盘铜线部件的特征在于自钝化，低电阻，高粘合强度和改善的耐氧化性， Cu-铜Cu组分包括：金属化线; 分离金属化线的衬里和围绕Cu焊盘的Cu合金; 围绕衬套的电介质; 和与Cu合金线接合的铜焊盘; Cu-丝组分的特征在于自钝化区域：a）在Cu-合金和衬垫之间的富掺杂界面; b）铜焊盘的表面; c）Cu焊盘和Cu合金线之间的接合表面; 和d）Cu合金线的表面。

34. 发明申请

WO2015036032A1 VERFAHREN ZUM AUFBRINGEN EINER BONDSCHICHT 审中-公开
标题翻译：方法用于应用层接合
公开(公告)号：WO2015036032A1
公开(公告)日：2015-03-19
申请号：PCT/EP2013/069003
申请日：2013-09-13
申请人： EV GROUP E. THALLNER GMBH
发明人： WIMPLINGER, Markus
IPC分类号： B81C3/00 , H01L23/10
CPC分类号： H01L24/83 , B81C3/001 , B81C2203/036 , H01L24/29 , H01L24/32 , H01L2224/29082 , H01L2224/291 , H01L2224/29105 , H01L2224/29111 , H01L2224/29116 , H01L2224/29117 , H01L2224/29118 , H01L2224/29123 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29157 , H01L2224/2916 , H01L2224/29166 , H01L2224/29169 , H01L2224/29171 , H01L2224/29184 , H01L2224/32145 , H01L2224/32507 , H01L2224/8302 , H01L2224/83022 , H01L2224/8381 , H01L2224/83894 , H01L2924/01003 , H01L2924/01005 , H01L2924/01011 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01034 , H01L2924/01037 , H01L2924/01038 , H01L2924/0105 , H01L2924/01052 , H01L2924/01055 , H01L2924/01056 , H01L2924/01322 , H01L2924/10251 , H01L2924/10252 , H01L2924/10253 , H01L2924/1026 , H01L2924/10271 , H01L2924/10272 , H01L2924/10323 , H01L2924/10328 , H01L2924/10329 , H01L2924/1033 , H01L2924/10331 , H01L2924/10332 , H01L2924/10333 , H01L2924/10334 , H01L2924/10335 , H01L2924/10336 , H01L2924/10346 , H01L2924/1037 , H01L2924/10371 , H01L2924/10372 , H01L2924/10373 , H01L2924/10375 , H01L2924/10376 , H01L2924/10377 , H01L2924/10821 , H01L2924/10823 , H01L2924/10831 , H01L2924/00 , H01L2924/00014 , H01L2924/01032 , H01L2924/01013 , H01L2924/01031 , H01L2924/0103
摘要： Die Erfindung betrifft ein Verfahren zum Aufbringen einer aus einer Grundschicht und einer Schutzschicht bestehenden Bondschicht auf ein Substrat mit folgenden Verfahrensschritten: Aufbringen eines oxidierbaren Grundmaterials als Grundschicht auf eine Bondseite des Substrats, zumindest teilweises Bedecken der Grundschicht mit einem in dem Grundmaterial zumindest teilweise lösbaren Schutzmaterial als Schutzschicht. Weiterhin betrifft die Erfindung ein korrespondierendes Substrat.
摘要翻译：本发明涉及一种方法，用于施加由基本层和包括以下步骤在基底上的保护层粘结层的一个基团：在所述基板的接合侧上沉积可氧化的基体材料作为基体层至少部分地覆盖有至少部分可溶于基体层中的基体材料的保护材料为保护层。本发明还涉及一种相应的底物。

35. 发明申请

WO2004071700A3 ROOM TEMPERATURE METAL DIRECT BONDING 审中-公开
标题翻译：房间温度金属直接结合
公开(公告)号：WO2004071700A3
公开(公告)日：2005-04-21
申请号：PCT/US2004002006
申请日：2004-02-06
申请人： ZIPTRONIX INC , TONG QIN-YI , ENQUIST PAUL M , ROSE ANTHONY SCOT
发明人： TONG QIN-YI , ENQUIST PAUL M , ROSE ANTHONY SCOT
IPC分类号： H01L21/60 , H01L21/98 , H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H01L21/76251 , B23K20/02 , H01L21/481 , H01L24/09 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/28 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/89 , H01L24/90 , H01L25/50 , H01L2224/05568 , H01L2224/05573 , H01L2224/13011 , H01L2224/13099 , H01L2224/13109 , H01L2224/13144 , H01L2224/13147 , H01L2224/32145 , H01L2224/80801 , H01L2224/81011 , H01L2224/81013 , H01L2224/81014 , H01L2224/81136 , H01L2224/81143 , H01L2224/81193 , H01L2224/81208 , H01L2224/8121 , H01L2224/81801 , H01L2224/81815 , H01L2224/8183 , H01L2224/81894 , H01L2224/83095 , H01L2224/8319 , H01L2224/8334 , H01L2224/83801 , H01L2224/8383 , H01L2224/8384 , H01L2224/8385 , H01L2224/83894 , H01L2224/83895 , H01L2224/83907 , H01L2224/9202 , H01L2225/06513 , H01L2924/00013 , H01L2924/01003 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/0106 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/07802 , H01L2924/10329 , H01L2924/12042 , H01L2924/1305 , H01L2924/14 , H01L2924/1532 , H01L2924/351 , Y10T29/49126 , H01L2924/3512 , H01L2924/00 , H01L2224/29099 , H01L2224/05644 , H01L2924/00014 , H01L2224/05664 , H01L2224/05669 , H01L2224/05124 , H01L2224/05147
摘要： A bonded device structure including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads formed by contact bonding of the first non-metallic region to the second non-metallic region. At least one of the first and second substrates may be elastically deformed.
摘要翻译：一种粘结器件结构，包括具有第一组金属接合焊盘的第一衬底，优选地连接到器件或电路，并且具有与第一衬底上的金属焊盘相邻的第一非金属区域，第二衬底具有第二衬底一组金属接合焊盘与第一组金属焊盘对准，优选地连接到器件或电路，并且具有与第二衬底上的金属焊盘相邻的第二非金属区域，以及位于第二衬底之间的接触接合界面通过第一非金属区域与第二非金属区域的接触接合形成的第一和第二组金属接合焊盘。第一和第二基板中的至少一个可能弹性变形。

36. 发明公开

EP1432032A3 Semiconductor chip stack and method for manufacturing the same 审中-公开
标题翻译：半导体奇普·斯塔克，并处理它的制备
公开(公告)号：EP1432032A3
公开(公告)日：2013-05-22
申请号：EP03029014.2
申请日：2003-12-16
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Yamazaki, Shunpei , Takayama, Toru , Maruyama, Junya , Ohno, Yumiko
IPC分类号： H01L25/065 , H01L23/373 , H01L21/683 , H01L21/98 , H01L27/12
CPC分类号： H01L27/1266 , H01L21/6835 , H01L24/29 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L27/1214 , H01L2221/68359 , H01L2221/68368 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/16225 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/8319 , H01L2224/83205 , H01L2224/838 , H01L2224/83805 , H01L2224/83851 , H01L2224/92247 , H01L2225/0651 , H01L2225/06541 , H01L2225/06586 , H01L2225/06589 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/0104 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/0106 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/0665 , H01L2924/07811 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/30105 , H01L2924/00012 , H01L2924/00 , H01L2924/01014 , H01L2924/01003 , H01L2924/01007 , H01L2924/01012 , H01L2924/01022 , H01L2224/05541 , H01L2224/05005 , H01L2224/05599
摘要： A semiconductor chip having a plurality of device formative layers that are formed into an integrated thin film is provided by a technique for transferring. According to the present invention, a semiconductor chip that is formed into a thin film and that is highly integrated can be manufactured by transferring a device formative layer (501) with a thickness of at most 50µm which is separated from a substrate (322) into another substrate by a technique for transferring, and transferring another device formative layer with a thickness of at most 50µm which is separated from another substrate to the above device formative layers, and, repeating such transferring process.

37. 发明公开

EP1753018A2 Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based semiconductor device 有权转让
标题翻译：一种用于生产制造半导体器件的氮化物基的单晶氮化物的基底和方法的工序
公开(公告)号：EP1753018A2
公开(公告)日：2007-02-14
申请号：EP06253864.0
申请日：2006-07-24
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Yang, Jong In , Park, Ki Yon
IPC分类号： H01L21/20 , C30B29/40
CPC分类号： C30B29/60 , C30B29/403 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L24/96 , H01L33/0075 , H01L33/0079 , H01L2221/68327 , H01L2221/68363 , H01L2221/68368 , H01L2924/01003 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0106 , H01L2924/01073 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/351 , H01L2924/3511 , H01L2924/00
摘要： A method for manufacturing a nitride based single crystal substrate and a method for manufacturing a nitride based semiconductor device. The method for manufacturing the nitride based single crystal substrate includes forming a nitride based single crystal layer on a preliminary substrate; forming a polymer support layer by applying a setting adhesive material having flowability on the upper surface of the nitride based single crystal layer and hardening the applied adhesive material; and separating the nitride based single crystal layer from the preliminary substrate by irradiating a laser beam onto the lower surface of the preliminary substrate. The method for manufacturing the nitride based single crystal substrate is applied to the manufacture of a nitride based semiconductor device having a vertical structure.
摘要翻译：一种用于制造基于氮化物单晶衬底和用于制造基于氮化物的半导体器件的方法的方法。用于制造基于氮化物单晶衬底的方法，包括：形成在基板初步基于氮化物的单晶层; 通过施加具有上的氮化物的上表面上流动的能力的设定粘合材料基于单晶层形成聚合物支撑层和硬化所涂覆的粘结材料; 和通过将激光束照射到初步基板的下表面分离从预备基板上的氮化物基单晶层。用于制造基于氮化物单晶衬底的方法，被施加到具有垂直结构的氮化物半导体器件的制造。

38. 发明公开

EP0722198A2 Bonding wire with integral connection 失效
标题翻译： Bonddraht mit integrierterKontaktfläche
公开(公告)号：EP0722198A2
公开(公告)日：1996-07-17
申请号：EP96300124.3
申请日：1996-01-08
申请人： TEXAS INSTRUMENTS INC.
发明人： Vinson, Michael R.
IPC分类号： H01R4/62
CPC分类号： H01L24/45 , B32B15/01 , H01L24/48 , H01L24/85 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45386 , H01L2224/45565 , H01L2224/45572 , H01L2224/45624 , H01L2224/45655 , H01L2224/45664 , H01L2224/45669 , H01L2224/45686 , H01L2224/48245 , H01L2224/48247 , H01L2224/8503 , H01L2224/85207 , H01L2924/00011 , H01L2924/01003 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/15747 , H01L2924/20752 , H01L2924/3025 , H01R13/03 , H01L2224/45117 , H01L2924/01004 , H01L2924/00014 , H01L2924/00 , H01L2924/013 , H01L2924/0543 , H01L2924/01049
摘要： A wire for use in making connection to bond pads of semiconductor devices and the like, the interconnection and method of making the interconnection between a semiconductor device or the like and an external connection point with a plated (3) wire (1) which can have one or more different layers of plating thereon. When the core material (1) will be the electrical conductor (skin effect is not present), the core material will be highly electrically conductive, such as aluminum, copper, silver or gold with the particular material used be chosen to be compatible with the bond pad to which connection is to be made. The outer plating material is chosen to be both electrically conductive and compatible with the material of the external connection point and also capable of forming an alloy with the core material which is compatible with the bond pad. Nickel and palladium, for example, are appropriate plating materials. When two plating layers are used, the intermediate layer (3) will generally provide an alloy with the wire material and the outer layer (5) which is better compatible with the bond pad material than the core material and outer layer alone. In the case of high frequency operation (skin effect is present), the core need not be a good electrical conductor whereas the plating thereon must be a good electrical conductor. Otherwise, the requirements for bonding are the same. In general, the properties of the core material and the plating material can be tailored to each other to enhance the total overall properties of the conductor for the required end use.
摘要翻译：用于连接半导体器件等的接合焊盘的线，与半导体器件等之间的互连的互连和方法以及具有可以具有的（3）线（1）的外部连接点一个或多个不同的电镀层。当核心材料（1）将是电导体（不存在皮肤效应）时，芯材将是高度导电的，例如铝，铜，银或金，所选择的特定材料被选择为与要连接的接合焊盘。外镀层材料被选择为导电并且与外部连接点的材料兼容，并且还能够与与焊盘兼容的芯材料形成合金。例如，镍和钯是合适的电镀材料。当使用两个镀层时，中间层（3）通常将提供与线材料和外层（5）的合金，其与仅与芯材料和外层相比，与粘合垫材料更好地相容。在高频操作（存在皮肤效应）的情况下，芯不需要是良好的电导体，而其上的电镀必须是良好的电导体。否则，粘合的要求是一样的。通常，芯材和电镀材料的性质可以相互调整，以增强所需最终用途的导体总体性能。

40. 发明公开

EP2315240A1 ALUMINUM RIBBON FOR ULTRASONIC BONDING 审中-公开
标题翻译： ALUMINIUMBANDFÜRULTRASCHALLSCHWEISSUNGEN
公开(公告)号：EP2315240A1
公开(公告)日：2011-04-27
申请号：EP09804793.9
申请日：2009-05-01
申请人： Tanaka Denshi Kogyo K.K.
发明人： MIKAMI Michitaka , KIKUCHI Teruo , HIRATA Yuichi , NAKASHIMA Shinichiro , SATOU Matsumi , KIMURA Keisuke
IPC分类号： H01L21/60
CPC分类号： B21C37/047 , C22C21/00 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/432 , H01L2224/4321 , H01L2224/43848 , H01L2224/43986 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/4851 , H01L2224/85205 , H01L2924/00011 , H01L2924/01005 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01045 , H01L2924/01049 , H01L2924/01051 , H01L2924/01057 , H01L2924/01058 , H01L2924/0106 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01202 , H01L2924/01204 , H01L2924/01205 , H01L2924/014 , H01L2924/01003 , H01L2924/01004 , H01L2924/01039 , H01L2224/45139 , H01L2924/00012 , H01L2924/00 , H01L2924/013 , H01L2924/00013 , H01L2924/01203 , H01L2924/01059 , H01L2924/20304 , H01L2924/00014 , H01L2924/00015 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20105 , H01L2924/01006
摘要： To provide a bonding ribbon which can be realized the stable bonding strength, which has a homogeneous whole bonded surface every time for several ten thousands bonding cycles.
An aluminum ribbon for ultrasonic bonding comprising: an aluminum alloy is more than 99 wt % of Al, it contains additive elements and residual aluminum, wherein it has ultra thin tape structure roll rolled after multi stages drawing, wherein the average crystal grain size at a cross section of the ribbon is 5 - 200 µm, wherein it is featured the ratio of the thickness to the width is 1/2 - 1/20.
It is preferable that the aspect ratio of crystal grain (width direction/thickness direction) is 0.5 - 10 and the surface of the tape is mirror-finished wherein the surface roughness R z is less than 2 µm and/or equals to 2 µm.
摘要翻译：为了提供能够实现稳定的结合强度的粘合带，其每次具有均匀的整个粘结表面，可以进行数千个粘结循环。一种超声波接合用铝带，其特征在于，铝合金的Al大于99重量％，含有添加元素和残留铝，其中，在多阶段拉伸之后，其具有超薄带结构辊轧，其中平均晶粒尺寸为带的横截面为5-200μm，其特征在于厚度与宽度之比为1/2至1/20。晶粒长宽比（宽度方向/厚度方向）优选为0.5〜10，并且表面粗糙度R z小于2μm和/或等于2μm的带的表面是优选的。

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