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31. 发明授权

KR101084820B1 메모리 디바이스 아키텍처 및 동작 失效
标题翻译：存储器件结构和操作
公开(公告)号：KR101084820B1
公开(公告)日：2011-11-21
申请号：KR1020097018004
申请日：2008-01-29
申请人： 마이크론 테크놀로지, 인크.
发明人： 루파바르,프랭키,에프.
IPC分类号： G11C16/16 , G11C16/14 , G11C16/06
CPC分类号： G11C16/06 , G06F12/0246 , G06F12/04 , G06F2212/2022 , G11C16/16 , G11C19/0858
摘要： Non-volatile memory devices logically organized to have erase blocks of at least two different sizes provide for concurrent erasure of multiple physical blocks of memory cells, while providing for individual selection of those physical blocks for read and program operations. In this manner, data expected to require frequent updating can be stored in locations corresponding to first erase blocks having a first size while data expected to require relatively infrequent updating can be stored in locations corresponding to second erase blocks larger than the first erase blocks. Storing data expected to require relatively more frequent updating in smaller logical memory blocks facilitates a reduction in unnecessary erasing of memory cells. In addition, by providing for larger logical memory blocks for storing data expected to require relatively less frequent updating, efficiencies can be obtained in erasing larger quantities of memory cells concurrently.

32. 发明公开

KR1020090106645A 메모리 디바이스 아키텍처 및 동작 失效
标题翻译：存储器件结构和操作
公开(公告)号：KR1020090106645A
公开(公告)日：2009-10-09
申请号：KR1020097018004
申请日：2008-01-29
申请人： 마이크론 테크놀로지, 인크.
发明人： 루파바르,프랭키,에프.
IPC分类号： G11C16/16 , G11C16/14 , G11C16/06
CPC分类号： G11C16/06 , G06F12/0246 , G06F12/04 , G06F2212/2022 , G11C16/16 , G11C19/0858
摘要： Non-volatile memory devices (100, 610) logically organized to have erase blocks of at least two different sizes provide for concurrent erasure of multiple physical blocks (340) of memory cells (208, 308), while providing for individual selection of those physical blocks (340) for read and program operations, hi this manner, data expected to require frequent updating can be stored in locations corresponding to first erase blocks having a first size while data expected to require relatively infrequent updating can be stored in locations corresponding to second erase blocks larger than the first erase blocks. Storing data expected to require relatively more frequent updating in smaller logical memory blocks facilitates a reduction in unnecessary erasing of memory cells (208, 308). In addition, by providing for larger logical memory blocks for storing data expected to require relatively less frequent updating, efficiencies can be obtained in erasing larger quantities of memory cells (208, 308) concurrently.
摘要翻译：逻辑上组织为具有至少两个不同大小的擦除块的非易失性存储器件（100,610）提供对存储器单元（208,308）的多个物理块（340）的同时擦除，同时提供对这些物理用于读取和编程操作的块（340）。以这种方式，可以将期望需要频繁更新的数据存储在与具有第一尺寸的第一擦除块相对应的位置中，而期望要求相对不频繁更新的数据可以存储在对应于第二擦除大于第一个擦除块的块。存储期望在较小逻辑存储器块中需要相对更频繁更新的数据便于减少存储器单元（208,308）的不必要擦除。此外，通过提供用于存储期望要求相对较少频繁更新的数据的较大逻辑存储器块，可以在同时擦除较大量的存储器单元（208,308）中获得效率。

33. 发明公开

KR1020170042570A 자기 소자, 스커미온 메모리, 고체 전자 장치, 데이터 기록 장치, 데이터 처리 장치 및 통신 장치 审中-实审
标题翻译：磁性设备，skirmon内存，固态电子设备，数据记录设备，数据处理设备和通信设备
公开(公告)号：KR1020170042570A
公开(公告)日：2017-04-19
申请号：KR1020177003129
申请日：2015-06-30
申请人： 고쿠리쓰 겐큐 가이하쓰 호징 리가가쿠 겐큐소
发明人： 나가오사나오토 , 고시바에와타루 , 이와사키주니치 , 가와사키마사시 , 토쿠라요시노리 , 가네코요시오
IPC分类号： G11C11/14 , G11C11/15 , H01F10/08 , H01L27/105 , H01L43/08 , G11B5/65
CPC分类号： G11C19/085 , G11B5/65 , G11C11/16 , G11C11/1673 , G11C11/1675 , G11C11/18 , G11C19/0841 , G11C19/0858 , G11C19/0866 , H01F10/08 , H01L27/105 , H01L43/08
摘要： 자기소자스커미온을주회전송가능한스커미온메모리회로이며, 폐경로형상의자성체상에폐경로형상의외주부에연결된외주전극과폐경로형상의내주부에연결된내주전극사이에전류를인가하고, 인가된전류방향과실질적으로수직방향으로스커미온을전송하고, 폐경로형상의자성체상에스커미온을주회시키고, 폐경로형상의자성체의일면에서자성체의단부를포함하는단부영역을둘러싸며설치된하나이상의전류경로를구비하는스커미온메모리회로를제공한다.
摘要翻译：的磁性元件，木槿微温主可穿透木槿微温存储器电路，施加在上述外周电极连接到所述形状的内周面到了更年期的形状的磁性材料到了更年期的内电极和连接到该形状的外周的绝经之间的电流，并施加电流方向并且基本上传送木槿微温在垂直方向和，并满足木槿微温的形状的磁性材料的更年期，所述一个或多个电流在绝经形状磁性体的一侧被安装周围包括磁性体端部的端部区域和一个具有路径的skirmon存储器电路。

34. 发明公开

KR1020170041774A 자기 저장 매체 및 데이터 기록 장치 审中-实审
标题翻译：磁记录介质和数据记录装置
公开(公告)号：KR1020170041774A
公开(公告)日：2017-04-17
申请号：KR1020177005639
申请日：2015-07-03
申请人： 고쿠리쓰 겐큐 가이하쓰 호징 리가가쿠 겐큐소
发明人： 나가오사나오토 , 고시바에와타루 , 이와사키주니치 , 가와사키마사시 , 토쿠라요시노리 , 가네코요시오
IPC分类号： G11B5/02 , G11B5/65 , G11B5/738 , H01L43/08
CPC分类号： G11B5/74 , G11B5/02 , G11B5/65 , G11B5/738 , G11B2005/0021 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/18 , G11C13/04 , G11C19/0808 , G11C19/085 , G11C19/0858 , H01L43/08
摘要： 데이터의쓰기횟수가무한대에가까운인듀어런스(내구성), 영구에가까운데이터리텐션(유지)특성을가지며, 초고속으로쓰고삭제할수 있는자기저장매체및 상기자기저장매체를응용한데이터기록매체이미지기록장치를제공한다. 얇은층상의자성체와자성체의일면에대향하여마련된자기장발생부를구비하고, 자성체의일면과반대측에위치하는자성체의다른일면에열 에너지를인가함으로써, 스커미온을생성또는삭제할수 있는자기저장매체및 자기저장매체로구성된스커미온메모리.
摘要翻译：具有紧密indyueoreonseu（耐久性），接近数据保留的数据的写入次数（保持）持久属性为无穷大时，磁性记录介质和数据记录介质的记录图像施加所述介质设备，可以删除和写入高速的磁存储提供。相对的磁性体和磁性体，所述一个表面的薄层和具有具备设置在磁场产生部，通过施加热能至磁性体，其位于所述磁性材料表面，将其相反侧，即可以创建或删除扶桑微温存储介质中的磁性的另一侧，和磁由存储介质组成的Skyrimon内存。

35. 发明公开

EP3166138A4 MAGNETIC ELEMENT, SKYRMION MEMORY, SOLID-STATE ELECTRONIC DEVICE, DATA RECORDING DEVICE, DATA PROCESSOR AND COMMUNICATION DEVICE 有权
公开(公告)号：EP3166138A4
公开(公告)日：2018-03-14
申请号：EP15815321
申请日：2015-06-30
申请人： RIKEN
发明人： NAGAOSA NAOTO , KOSHIBAE WATARU , IWASAKI JUNICHI , KAWASAKI MASASHI , TOKURA YOSHINORI , KANEKO YOSHIO
IPC分类号： G11C11/16 , G11B5/65 , G11C11/18 , G11C19/08 , H01F10/08 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11C19/085 , G11B5/65 , G11C11/16 , G11C11/1673 , G11C11/1675 , G11C11/18 , G11C19/0841 , G11C19/0858 , G11C19/0866 , H01F10/08 , H01L27/105 , H01L43/08
摘要： Provided is a skyrmion memory circuit capable of circularly transferring a magnetic element skyrmion, comprising one or more current paths in a magnet having a closed-path pattern that are provided surrounding an end region including an end portion of the magnet in a plane of the magnet with the closed-path pattern, and applying current between an outer terminal connected to an outer circumferential portion of the closed-path pattern and an inner circumference electrode connected to an inner circumferential portion of the closed-path pattern, transferring the skyrmion in a direction substantially perpendicular to the direction of the applied current, and circulating the skyrmion in the magnet with the closed-path pattern.

36. 发明授权

EP0203849B1 Générateur de bulles magnétiques pour mémoire à bulles en technologie hybride 失效
标题翻译：用于混合技术气泡存储器的磁性泡沫发生器
公开(公告)号：EP0203849B1
公开(公告)日：1990-11-28
申请号：EP86401036.8
申请日：1986-05-14
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE
发明人： Fedeli, Jean-Marc , Louis, Christine , Pisella, Christian
IPC分类号： G11C19/08
CPC分类号： G11C19/0858

37. 发明授权

EP0104919B1 Thermomagnetic recording methods 失效
标题翻译：热电记录方法
公开(公告)号：EP0104919B1
公开(公告)日：1990-01-31
申请号：EP83305715.1
申请日：1983-09-26
申请人： SONY CORPORATION
发明人： Kaneko, Masahiro , Tamada, Hitoshi , Okamoto, Tsutomu , Yamada, Toshiro
IPC分类号： G11C19/08 , G11C13/06
CPC分类号： G11C19/0858 , G11C13/06

38. 发明公开

EP0255044A1 Bloch line memory device 失效
标题翻译： Blochlinien-Speichereinrichtung。
公开(公告)号：EP0255044A1
公开(公告)日：1988-02-03
申请号：EP87110675.3
申请日：1987-07-23
申请人： HITACHI, LTD.
发明人： Maruyama, Youji , Suzuki, Ryo
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0858
摘要： A Bloch line memory device in which a stripe magnetic domain (1) is formed within a magnetic film for holding magnetic bubble domains, and Bloch line pairs (4a,4b; 5a, 5b) are stored as information carriers within a magnetic wall defining the magnetic domain. In order to write Bloch lines into the magnetic wall of the stripe magnetic domain, current (I g ) is caused to flow through a single conductor (14) which is so disposed as to cross the mgnetic wall of the stripe magnetic domain. On this occasion, the current through the single conductor (14) is so directed as to generate an in-plane field opposite in sense to magnetization within the magnetic wall of the stripe magnetic domain (1).
摘要翻译：一种布洛赫线存储器件，其中在用于保持气泡区域的磁性膜内形成条形磁畴（1），并且布洛赫线对（4a，4b; 5a，5b）作为信息载体存储在限定磁畴。为了将Bloch线写入条形磁畴的磁壁，使电流（Ig）流过单个导体（14），该导体被设置为穿过条形磁畴的磁性壁。在这种情况下，通过单个导体（14）的电流被引导为产生与条状磁畴（1）的磁性壁内的磁化有意义的面内场。

39. 发明授权

EP0049113B1 File deletion method for bubble cassette memory, and bubble cassette memory control apparatus 失效
标题翻译：用于泡沫储存器的文件删除方法和泡沫储存控制装置
公开(公告)号：EP0049113B1
公开(公告)日：1987-12-16
申请号：EP81304401.3
申请日：1981-09-24
申请人： FANUC LTD.
发明人： Nozawa, Ryoichiro , Kiya, Nobuyuki
IPC分类号： G11C19/08 , G05B19/405
CPC分类号： G11C19/0875 , G11C19/0858

40. 发明公开

EP0072696A3 Magnetic bubble memory device and method for operating the same 失效
标题翻译：磁性气泡存储器件及其操作方法
公开(公告)号：EP0072696A3
公开(公告)日：1985-08-07
申请号：EP82304326
申请日：1982-08-17
申请人： FUJITSU LIMITED
发明人： Matsuda, Kazuo , Ohashi, Makoto , Satoh, Yoshio , Miyashita, Tsutomu , Komenou, Kazunari
IPC分类号： G11C19/08
CPC分类号： G11C19/0858 , G11C19/0883
摘要： A magnetic bubble memory device comprises: a magnetic layer having a first region (10,12,13) having an easy axis of magnetization extending in a certain direction and a second region surrounding the first region and having an easy axis of magnetization substantially perpendicular to that of the first region, the first region defining a plurality of bubble propagation patterns; and a replicate gate (RG) comprising a stretch conductor pattern (14) to which an electric current is applied so as to stretch a bubble between the propagation patterns (13 and 12) and a cutting pattern adapted to lower the bubble collapse field so as to cut the stretched domain. The cutting pattern according to the invention is formed within the second region, and may be V-shaped (shown in dotted lines). Alternatively, the cutting pattern is straight, and is over-implanted with ions. The replicate gate is operated by applying an operating current pulse to the stretch conductor pattern, the operating pulse comprising a stretch pulse for stretching the bubble and then a cut pulse for cutting the stretched domain.

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