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31. 发明申请

US20110235452A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR OPERATING THE SAME 有权
标题翻译：半导体存储器件及其操作方法
公开(公告)号：US20110235452A1
公开(公告)日：2011-09-29
申请号：US12814702
申请日：2010-06-14
申请人： Kwi-Dong Kim , Ki-Chang Kwean
发明人： Kwi-Dong Kim , Ki-Chang Kwean
IPC分类号： G11C17/16
CPC分类号： G11C16/16 , G11C16/18
摘要： A semiconductor memory device including an information storage unit comprising a fuse configured to store information, a control unit configured to control a node of a blown fuse to become a floating state in response to a control pulse signal, and an output unit configured to output the information.
摘要翻译：一种半导体存储器件，包括：信息存储单元，包括被配置为存储信息的熔丝;控制单元，被配置为响应于控制脉冲信号控制熔断熔丝的节点变为浮置状态;以及输出单元，信息。

32. 发明申请

US20050232026A1 Ultraviolet erasable semiconductor memory device 有权
标题翻译：紫外线可擦除半导体存储器件
公开(公告)号：US20050232026A1
公开(公告)日：2005-10-20
申请号：US11053851
申请日：2005-02-10
申请人： Yukihisa Kumagai
发明人： Yukihisa Kumagai
IPC分类号： G11C16/04 , G11C5/00 , G11C8/00 , G11C11/34 , G11C11/42 , G11C16/00 , G11C16/06 , G11C16/18 , H01L21/8247 , H01L27/10 , H01L27/115 , H01L29/78 , H01L29/788 , H01L29/792
CPC分类号： G11C16/18 , G11C8/00
摘要： Each memory cell of an EPROM contains two MOSFETs and a data of each memory cell is read out by detecting a current difference between the two MOSFETs by using a differential amplifier. In such constitution as described above, even when the data is erased by irradiating an ultraviolet ray, a stable output of the differential amplifier can be obtained and, therefore, confirmation of an initialized state can be facilitated. Specifically, a channel width WA of one of the two MOSFETs constituting the memory cell is formed narrower than a channel width WB of the other. By such arrangement as described above, in an initialized state in which the ultraviolet ray is irradiated, a data signal current value IHA of the MOSFET having the channel width WA becomes smaller than a data signal current value IHB flowing in the MOSFET having the channel width WB. Accordingly, the output of the differential amplifier is fixed in accordance with a current magnitude relation of IHA
摘要翻译： EPROM的每个存储单元包含两个MOSFET，并且通过使用差分放大器检测两个MOSFET之间的电流差来读出每个存储单元的数据。在这样构成的情况下，即使通过照射紫外线来擦除数据，也能够获得稳定的差分放大器的输出，因此能够促进初始化状态的确认。具体地，构成存储单元的两个MOSFET之一的沟道宽度W A A A形成得窄于另一个的沟道宽度W B B。通过如上所述的布置，在照射紫外线的初始化状态下，具有沟道宽度W A A的MOSFET的数据信号电流值I H HA < 小于在具有沟道宽度W B的MOSFET中流动的数据信号电流值I HB。因此，差分放大器的输出根据I H B H I H B B的电流大小关系固定，从而定义数据“0”。另一方面，在写入数据“1”时，将电荷注入具有沟道宽度W B B的MOSFET的浮置栅电极以提高阈值电压Vt，然后，MOSFET为设置为“关闭”状态。

33. 发明申请

US20040174749A1 Method and apparatus for detecting exposure of a semiconductor circuit to ultra-violet light 有权
标题翻译：用于检测半导体电路对紫外光的曝光的方法和装置
公开(公告)号：US20040174749A1
公开(公告)日：2004-09-09
申请号：US10378414
申请日：2003-03-03
发明人： Shane C. Hollmer
IPC分类号： G11C011/34
CPC分类号： G11C16/18 , G11C16/22
摘要： A method and apparatus are disclosed for detecting if a semiconductor circuit has been exposed to ultra-violet light. An ultra-violet light detection circuit detects exposure to ultra-violet light and will automatically activate a security violation signal. The security violation signal may optionally initiate a routine to clear sensitive data from memory or prevent the semiconductor circuit from further operation. The ultra-violet light detection circuit detects whether a semiconductor circuit has been exposed to ultra-violet light, for example, by employing a dedicated mini-array of non-volatile memory cells. At least two active bit lines, blprg and bler, are employed corresponding to program and erase, respectively. One of the bit lines is only programmable and the other bit line is only eraseable. Generally, all of the bits in the dedicated non-volatile memory array are initially in approximately the same state, which could be erased, programmed or somewhere in between. An offset current is added to one bit line and a change in the resulting current difference is used to detect an exposure to ultra-violet light.
摘要翻译：公开了一种用于检测半导体电路是否已经暴露于紫外光的方法和装置。紫外光检测电路检测到紫外光的曝光，并自动激活安全违规信号。安全违规信号可以可选地启动例程以从存储器清除敏感数据或防止半导体电路进一步操作。紫外光检测电路例如通过采用非易失性存储单元的专用微型阵列来检测半导体电路是否已经暴露于紫外光。对应于编程和擦除分别使用至少两个有效位线blprg和bler。其中一个位线只能编程，另一个位线只能擦除。通常，专用非易失性存储器阵列中的所有位最初处于大致相同的状态，这可能被擦除，编程或其间的某处。偏移电流被添加到一个位线，并且所得到的电流差的变化用于检测对紫外光的曝光。

34. 发明申请

US20040037106A1 Laser programmable electrically readable phase-change memory method and device 有权
标题翻译：激光可编程电可读相变存储器的方法和装置
公开(公告)号：US20040037106A1
公开(公告)日：2004-02-26
申请号：US10223975
申请日：2002-08-20
申请人： MACRONIX INTERNATIONAL CO., LTD.
发明人： Chih-Yuan Lu , Yi-Chou Chen
IPC分类号： G11C017/14
CPC分类号： G11C13/0004 , G11C13/04 , G11C16/18 , G11C2213/72
摘要： Roughly described, a phase-change memory such as a chalcogenide-based memory is programmed optically and read electrically. No complex electrical circuits are required for programming the cells. On the other hand, this memory can be read by electrical circuitry directly. The read out speed is much faster than for optical disks, and integrated circuit chips made this way are more compatible with other electrical circuits than are optical disks. Thus memories according to the invention can have simple, low power-consuming, electrical circuits, and do not require slow and power-hungry disk drives for reading. The invention therefore provides a unique low power, fast read/write memory with simple electrical circuits.
摘要翻译：粗略地描述，诸如基于硫族化物的存储器之类的相变存储器被光学地编程并且被电读取。编程电池不需要复杂的电路。另一方面，该存储器可以直接由电路读取。读出速度比光盘快得多，而采用这种方式制成的集成电路芯片与其他电路比光盘更为兼容。因此，根据本发明的存储器可以具有简单的，低功耗的电路，并且不需要用于读取的缓慢且耗电的磁盘驱动器。因此，本发明提供了具有简单电路的独特的低功率，快速读/写存储器。

35. 发明授权

US6121656A Semiconductor memory device mounted with a light emitting device 失效
标题翻译：安装有发光器件的半导体存储器件
公开(公告)号：US6121656A
公开(公告)日：2000-09-19
申请号：US964828
申请日：1997-11-05
申请人： Haruo Tanaka , Yukio Shakuda
发明人： Haruo Tanaka , Yukio Shakuda
IPC分类号： H01L21/8247 , G11C16/18 , H01L27/115 , H01L27/15 , H01L29/788 , H01L29/792 , H01L31/167 , H01L33/32 , H01L33/56 , H07L29/788
CPC分类号： G11C16/18 , H01L31/167 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247
摘要： A semiconductor memory device in which a stored information can be simply erased only by an electric signal so as to be rewritten is provided. The semiconductor memory device includes (a) a semiconductor chip having an array of memory cells, stored information in the memory cells being erasable by light irradiation; (b) a light emitting element irradiating a light into the memory cells portion of the semiconductor chip; and (c) a package in which the semiconductor chip and the light emitting element are encapsulated with a resin in one body.
摘要翻译：提供了一种半导体存储器件，其中可以仅通过电信号简单地擦除存储的信息以便被重写。半导体存储器件包括（a）具有存储单元阵列的半导体芯片，存储单元中存储的信息可通过光照射而被擦除; （b）向所述半导体芯片的存储单元部分照射光的发光元件; 和（c）半导体芯片和发光元件用树脂封装在一体内的封装。

36. 发明授权

US5856705A Sealed semiconductor chip and process for fabricating sealed semiconductor chip 失效
标题翻译：密封半导体芯片和制造密封半导体芯片的工艺
公开(公告)号：US5856705A
公开(公告)日：1999-01-05
申请号：US734445
申请日：1996-10-17
申请人： Chiu H. Ting
发明人： Chiu H. Ting
IPC分类号： G11C16/18 , H01L23/00 , H01L23/29 , H01L23/31 , H01L21/78 , H01L29/34
CPC分类号： H01L23/564 , G11C16/18 , H01L23/291 , H01L23/3171 , H01L2924/0002
摘要： Described is a structure and process for forming a hermetically sealed chip. This hermetically sealed chip will greatly simplify packaging requirements and eventually lead to the realization of a "packageless chip". The hermetic sealing is composed of two parts, an extremely thin passivation layer which is deposited over the entire chip top and side surfaces and a passivation layer which is deposited over the bonding pad surface. Preferably, SiN is deposited as a chip surface passivation layer and Ni is selectively deposited as a metal passivation layer. The extremely thin nitride layer will minimize the stress and the amount of hydrogen in the SiN film and minimize deleterious effects upon device performance caused by stress and hydrogen. The thickness of the metal passivation layer may be the same as that of the dielectric layer so as to give a planar surface or it may be thick enough so as to give a protruding metal passivation bump.
摘要翻译：描述了形成密封芯片的结构和工艺。这种密封芯片将大大简化封装要求，最终导致实现“无封装芯片”。气密密封由两部分组成，其沉积在整个芯片顶部和侧表面上的极薄的钝化层和沉积在焊盘表面上的钝化层。优选地，SiN作为芯片表面钝化层沉积，并且Ni被选择性地沉积为金属钝化层。极薄的氮化物层将使SiN膜中的应力和氢的量最小化，并使由应力和氢引起的对器件性能的有害影响最小化。金属钝化层的厚度可以与电介质层的厚度相同，以便得到平坦的表面，或者可以足够厚以便产生突出的金属钝化凸块。

37. 发明授权

US5300461A Process for fabricating sealed semiconductor chip using silicon nitride passivation film 失效
标题翻译：使用氮化硅钝化膜制造密封半导体芯片的工艺
公开(公告)号：US5300461A
公开(公告)日：1994-04-05
申请号：US8469
申请日：1993-01-25
申请人： Chiu H. Ting
发明人： Chiu H. Ting
IPC分类号： G11C16/18 , H01L23/00 , H01L23/29 , H01L23/31 , H01L21/80
CPC分类号： H01L23/564 , G11C16/18 , H01L23/291 , H01L23/3171 , H01L2924/0002
摘要： Described is a structure and process for forming a hermetically sealed chip. This hermetically sealed chip will greatly simplify packaging requirements and eventually lead to the realization of a "packageless chip". The hermetic sealing is composed of two parts, an extremely thin passivation layer which is deposited over the entire chip top and side surfaces and a passivation layer which is deposited over the bonding pad surface. Preferably, SiN is deposited as a chip surface passivation layer and Ni is selectively deposited as a metal passivation layer. The extremely thin nitride layer will minimize the stress and the amount of hydrogen in the SiN film and minimize deleterious effects upon device performance caused by stress and hydrogen. The thickness of the metal passivation layer may be the same as that of the dielectric layer so as to give a planar surface or it may be thick enough so as to give a protruding metal passivation bump.
摘要翻译：描述了形成密封芯片的结构和工艺。这种密封芯片将大大简化封装要求，最终导致实现“无封装芯片”。气密密封由两部分组成，其沉积在整个芯片顶部和侧表面上的极薄的钝化层和沉积在焊盘表面上的钝化层。优选地，SiN作为芯片表面钝化层沉积，并且Ni被选择性地沉积为金属钝化层。极薄的氮化物层将使SiN膜中的应力和氢的量最小化，并使由应力和氢引起的对器件性能的有害影响最小化。金属钝化层的厚度可以与电介质层的厚度相同，以便得到平坦的表面，或者可以足够厚以便产生突出的金属钝化凸块。

38. 发明授权

US5255236A ROM card unit 失效
标题翻译： ROM卡单元
公开(公告)号：US5255236A
公开(公告)日：1993-10-19
申请号：US681342
申请日：1991-04-08
申请人： Mitsuo Maehara
发明人： Mitsuo Maehara
IPC分类号： G06F12/16 , G11C16/02 , G11C16/18 , G11C17/00 , G11C7/00 , G11C13/04
CPC分类号： G11C16/18
摘要： A ROM card unit having a card package accommodating a ROM card board on which ROMs allowing data stored therein to be erased by ultraviolet radiation are mounted. A transparent cover permitting ultraviolet light to transmit therethrough is provided on a first side of the card package where there are ultraviolet radiation windows of the ROMs. An ultraviolet shield member for preventing unwanted erasure of the data in the ROMs is mounted on the first side of the card package in such a manner as to be removable therefrom.

39. 发明授权

US5043004A Method for making a ceramic lid for hermetic sealing of an EPROM circuit 失效
标题翻译：制造用于EPROM电路气密密封的陶瓷盖的方法
公开(公告)号：US5043004A
公开(公告)日：1991-08-27
申请号：US574668
申请日：1990-08-29
申请人： Nobuaki Miyauchi
发明人： Nobuaki Miyauchi
IPC分类号： C04B37/04 , G11C16/18
CPC分类号： G11C16/18
摘要： An assembly structure and a method for making a ceramic lid for a hermetically sealed package for an EPROM circuit are disclosed. The assembly structure includes, in combination, a ceramic lid, a UV transparent lens, and two fixtures for supporting the lens in the lid. The two fixtures are configured to contact the lens only at predetermined areas which are not crucial to UV transparency. The UV transparent lens is hermetically sealed to the ceramic lid by firing the assembly structure. The assembly structure prevents the lens from attracting foreign particulate matter during firing, thereby leaving the surfaces of the lens clean. The method provides a ceramic lid having a UV transparent lens hermetically sealed thereto, which finds wide use in integrated circuit packages for high-density EPROM's because of the untainted surfaces of the lens.
摘要翻译：公开了一种用于制造用于EPROM电路的气密封装的陶瓷盖的组装结构和方法。组合结构包括陶瓷盖，UV透明透镜和用于将透镜支撑在盖中的两个固定装置。两个固定装置被配置成仅在对UV透明度至关重要的预定区域接触透镜。 UV透明透镜通过烧结组装结构而密封在陶瓷盖上。组装结构防止了镜头在烧制过程中吸引外来颗粒物，从而使透镜的表面清洁。该方法提供了一种具有密封在其上的UV透明透镜的陶瓷盖，其由于透镜的未被保持的表面而被广泛用于高密度EPROM的集成电路封装中。

40. 发明授权

US4727221A Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US4727221A
公开(公告)日：1988-02-23
申请号：US931652
申请日：1986-11-17
申请人： Akitoshi Saitou , Mikio Bessho
发明人： Akitoshi Saitou , Mikio Bessho
IPC分类号： H01L23/02 , G11C16/18 , H01L21/8247 , H01L29/788 , H01L29/792 , H01L23/06
CPC分类号： G11C16/18 , H01L2224/32225 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2924/01079 , H01L2924/3025 , Y10T428/2804 , Y10T428/31721
摘要： An UV-EPROM has a window for transmitting ultra-violet rays during the erasing operation, which is covered by a shading sheet including a metallic film, a polyimide film laminated on the upper surface of the metallic film, and a bond film attached to the lower surface of the metallic film.
摘要翻译： UV-EPROM具有用于在擦除操作期间传输紫外线的窗口，其被包括金属膜的遮光片，层压在金属膜的上表面上的聚酰亚胺膜和粘附到金属膜的粘结膜覆盖金属膜的下表面。

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