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31. 发明申请

US20090011261A1 METHOD FOR MANUFACTURING DISPLAY APPARATUS 审中-公开
标题翻译：制造显示装置的方法
公开(公告)号：US20090011261A1
公开(公告)日：2009-01-08
申请号：US12131444
申请日：2008-06-02
申请人： Hiroshi GOTOU
发明人： Hiroshi GOTOU
IPC分类号： B05D5/12 , B32B15/20
CPC分类号： H01L29/458 , H01L27/124 , H01L27/1255 , H01L29/4908
摘要： There is provided a direct contact technology whereby the contact electric resistance between an Al alloy film and transparent oxide conductives can be reduced, the heat resistance is also excellent, and hence the Al alloy film can be in direct contact with the transparent oxide conductives, and further the electric resistivity of the Al alloy is also still more reduced, and the productivity is also more enhanced. There is provided a method for manufacturing a display apparatus having a structure in which a transparent oxide conductive film and an Al alloy film are in direct contact with each other on a substrate. The Al alloy film contains at least one alloy element selected from a group consisting of Ag, Zn, Cu, and Ni in an amount of 0.5 atomic percent or less. The temperature of the substrate is controlled to the precipitation temperature of the alloy element or higher, and the Al alloy film is formed.
摘要翻译：提供了直接接触技术，由此可以降低Al合金膜和透明氧化物导电体之间的接触电阻，耐热性也优异，因此Al合金膜可以与透明氧化物导体直接接触，并且此外，Al合金的电阻率也进一步降低，生产率也提高。提供一种制造显示装置的方法，其具有透明氧化物导电膜和Al合金膜在基板上彼此直接接触的结构。 Al合金膜含有选自由Ag，Zn，Cu和Ni组成的组中的至少一种合金元素，其量为0.5原子％以下。将基板的温度控制在合金元素的析出温度以上，形成Al合金膜。

32. 发明申请

US20080315203A1 THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE 有权
标题翻译：薄膜晶体管基板和显示器件
公开(公告)号：US20080315203A1
公开(公告)日：2008-12-25
申请号：US12126527
申请日：2008-05-23
申请人： Aya HINO , Hiroshi GOTOU
发明人： Aya HINO , Hiroshi GOTOU
IPC分类号： H01L33/00
CPC分类号： H01L27/124 , H01L29/458 , H01L29/4908
摘要： Disclosed herein is a TFT substrate which exhibits good characteristic properties despite the omission of the barrier metal layer to be normally interposed between the source-drain electrodes and the semiconductor layer in the TFT. The TFT substrate permits sure and direct connection with the semiconductor layer of the TFT. The thin film transistor substrate has a substrate, a semiconductor layer and source-drain electrodes. The source-drain electrodes are composed of oxygen-containing layers and thin films of pure copper or a copper alloy. The oxygen-containing layer contains oxygen such that part or all of oxygen combines with silicon in the semiconductor layer. And, the thin films of pure copper or a copper alloy connect with the semiconductor layer of the thin film transistor through the oxygen-containing layers.
摘要翻译：本文公开了尽管不存在通常插入在TFT中的源 - 漏电极和半导体层之间的阻挡金属层的表现出良好的特性的TFT基板。 TFT基板可以确保和直接连接TFT的半导体层。薄膜晶体管基板具有基板，半导体层和源极 - 漏极电极。源漏电极由含氧层和纯铜或铜合金薄膜构成。含氧层含有氧，使得部分或全部氧与半导体层中的硅结合。并且，纯铜或铜合金的薄膜通过含氧层与薄膜晶体管的半导体层连接。

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