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31. 发明授权

US09093328B2 Semiconductor device having an oxide semiconductor with a crystalline region and manufacturing method thereof 有权
标题翻译：具有结晶区域的氧化物半导体的半导体装置及其制造方法
公开(公告)号：US09093328B2
公开(公告)日：2015-07-28
申请号：US12938533
申请日：2010-11-03
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
IPC分类号： H01L29/12 , H01L27/12 , H01L29/786 , H01L21/02
CPC分类号： H01L27/1225 , H01L21/02603 , H01L27/0883 , H01L27/1251 , H01L27/127 , H01L27/1288 , H01L29/045 , H01L29/24 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.
摘要翻译：晶体管使用本征或基本上固有的并且包括氧化物半导体层的表面部分中的结晶区域的氧化物半导体层。使用从氧化物半导体去除作为电子给体（供体）的杂质并且具有比硅半导体更大的能隙的本征或本质上的本征半导体。可以通过控制一对导电膜的电位来控制晶体管的电特性，所述一对导电膜相对于氧化物半导体层彼此相对设置，每个具有布置在其间的绝缘膜，使得沟道的位置确定在氧化物半导体层中形成的氧化物半导体层。

32. 发明授权

US09048203B2 Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor 有权
公开(公告)号：US09048203B2
公开(公告)日：2015-06-02
申请号：US13177647
申请日：2011-07-07
申请人： Shunpei Yamazaki , Toshiji Hamatani , Toru Takayama
发明人： Shunpei Yamazaki , Toshiji Hamatani , Toru Takayama
IPC分类号： H01L33/00 , H01L27/32 , H01L21/67 , H01L51/50 , H01L51/56 , H01L51/52
CPC分类号： H01L27/3211 , H01L21/67207 , H01L27/3209 , H01L27/3218 , H01L27/322 , H01L27/3244 , H01L27/3248 , H01L27/3258 , H01L27/3281 , H01L51/5036 , H01L51/504 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/5284 , H01L51/56 , H01L2251/5315
摘要： A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.

33. 发明授权

US09047840B2 Display device and electronic appliance 有权
标题翻译：显示设备和电子设备
公开(公告)号：US09047840B2
公开(公告)日：2015-06-02
申请号：US13159593
申请日：2011-06-14
申请人： Jun Koyama , Shunpei Yamazaki
发明人： Jun Koyama , Shunpei Yamazaki
IPC分类号： G06F3/038 , G09G5/00 , G09G3/36 , G09G3/34
CPC分类号： G09G3/3666 , G09G3/3413 , G09G3/342 , G09G3/3659 , G09G2310/0235 , G09G2310/024 , G09G2310/0297 , G09G2320/0242 , G09G2360/16
摘要： Included are a display panel including first to third pixel regions and a driver circuit; a backlight portion divided into a first light source region where light is emitted in response to input of a video signal to the first pixel region, a second light source region where light is emitted in response to input of a video signal to the second pixel region, and a third light source region where light is emitted in response to input of a video signal to the third pixel region; a video signal selection circuit used to supply the video signals from plural memory circuits to the driver circuit; a control circuit that supplies a control signal for controlling the driver circuit; a sequence determination circuit that supplies a backlight control signal and a selection signal; and a random number generation circuit used for selection from colors in the sequence determination circuit.
摘要翻译：包括包括第一至第三像素区域和驱动器电路的显示面板; 响应于对第一像素区域的视频信号的输入而被分成发射光的第一光源区域的背光部分，响应于向第二像素区域输入视频信号而发光的第二光源区域以及响应于对第三像素区域的视频信号的输入而发光的第三光源区域; 视频信号选择电路，用于将来自多个存储电路的视频信号提供给驱动电路; 控制电路，其提供用于控制所述驱动电路的控制信号; 序列确定电路，其提供背光控制信号和选择信号; 以及用于从序列确定电路中的颜色中选择的随机数生成电路。

34. 发明授权

US09042161B2 Memory device 有权
标题翻译：内存设备
公开(公告)号：US09042161B2
公开(公告)日：2015-05-26
申请号：US13230184
申请日：2011-09-12
申请人： Jun Koyama , Shunpei Yamazaki
发明人： Jun Koyama , Shunpei Yamazaki
IPC分类号： G11C11/24 , G11C5/02 , G11C11/404 , G11C11/4097 , G11C8/08
CPC分类号： G11C11/407 , G11C5/025 , G11C8/08 , G11C11/404 , G11C11/4097
摘要： In a memory device, memory capacity per unit area is increased while a period in which data is held is ensured. The memory device includes a driver circuit provided over a substrate, and a plurality of memory cell arrays which are provided over the driver circuit and driven by the driver circuit. Each of the plurality of memory cell arrays includes a plurality of memory cells. Each of the plurality of memory cells includes a first transistor including a first gate electrode overlapping with an oxide semiconductor layer, and a capacitor including a source electrode or a drain electrode, a first gate insulating layer, and a conductive layer. The plurality of memory cell arrays is stacked to overlap. Thus, in the memory device, memory capacity per unit area is increased while a period in which data is held is ensured.
摘要翻译：在存储装置中，确保了保持数据的期间的每单位面积的存储容量。存储器件包括设置在衬底上的驱动器电路和设置在驱动器电路上并由驱动器电路驱动的多个存储单元阵列。多个存储单元阵列中的每一个包括多个存储单元。多个存储单元中的每一个包括第一晶体管，其包括与氧化物半导体层重叠的第一栅电极，以及包括源电极或漏电极，第一栅绝缘层和导电层的电容器。堆叠多个存储单元阵列以重叠。因此，在存储装置中，确保了保持数据的期间的每单位面积的存储容量。

35. 发明授权

US09030298B2 Thin semiconductor device and operation method of thin semiconductor device 有权
标题翻译：薄型半导体器件及薄型半导体器件的操作方法
公开(公告)号：US09030298B2
公开(公告)日：2015-05-12
申请号：US13424737
申请日：2012-03-20
申请人： Shunpei Yamazaki , Takeshi Osada , Yasuyuki Arai , Yuko Tachimura
发明人： Shunpei Yamazaki , Takeshi Osada , Yasuyuki Arai , Yuko Tachimura
IPC分类号： G06K9/00 , H01L23/66 , G06K19/07 , G06K7/00 , G06K19/077
CPC分类号： G06K19/072 , G06K7/0008 , G06K19/0723 , G06K19/07718 , G06K19/07749
摘要： The present invention provides a thin semiconductor device in which its security such as prevention of counterfeit or information leakage is to be enhanced. One feature of the present invention is a thin semiconductor device in which a plurality of thin film integrated circuits are mounted and in which at least one integrated circuit is different from the other integrated circuits in any one of a specification, layout, frequency for transmission or reception, a memory, a communication means, a communication rule and the like. According to the present invention, a thin semiconductor device tag having the plurality of thin film integrated circuits communicates with a reader/writer and at least one of the thin film integrated circuits receives a signal to write information in a memory, and the information written in the memory determines which of the thin film integrated circuits communicates.
摘要翻译：本发明提供一种薄型半导体器件，其中要防止伪造或信息泄漏的安全性得到提高。本发明的一个特征是薄型半导体器件，其中安装了多个薄膜集成电路，并且其中至少一个集成电路与其他集成电路不同，其中任何一个规格，布局，传输频率或接收，存储器，通信装置，通信规则等。根据本发明，具有多个薄膜集成电路的薄的半导体器件标签与读取器/写入器通信，并且至少一个薄膜集成电路接收将信息写入存储器的信号，并且写入的信息存储器确定薄膜集成电路中的哪一个通信。

36. 发明授权

US09029184B2 Photoelectric conversion device and method for manufacturing the same 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US09029184B2
公开(公告)日：2015-05-12
申请号：US12405465
申请日：2009-03-17
申请人： Shunpei Yamazaki , Akihisa Shimomura
发明人： Shunpei Yamazaki , Akihisa Shimomura
IPC分类号： H01L31/18 , H01L31/0392 , H01L31/0224 , H01L31/0236 , H01L31/068 , H01L31/0687 , H01L31/072 , H01L31/0725 , H01L31/075 , H01L31/076 , H01L31/00
CPC分类号： H01L31/03921 , H01L21/76254 , H01L31/022425 , H01L31/0236 , H01L31/02363 , H01L31/068 , H01L31/0687 , H01L31/072 , H01L31/0725 , H01L31/075 , H01L31/076 , H01L31/18 , H01L31/1804 , H01L31/182 , H01L31/1896 , Y02E10/544 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： To provide a resource-saving photoelectric conversion device with excellent photoelectric conversion characteristics. Thin part of a single crystal semiconductor substrate, typically a single crystal silicon substrate, is detached to structure a photoelectric conversion device using a thin single crystal semiconductor layer, which is the detached thin part of the single crystal semiconductor substrate. The thin part of the single crystal semiconductor substrate is detached by a method in which a substrate is irradiated with ions accelerated by voltage, or a method in which a substrate is irradiated with a laser beam which makes multiphoton absorption occur. A so-called tandem-type photoelectric conversion device is obtained by stacking a unit cell including a non-single-crystal semiconductor layer over the detached thin part of the single crystal semiconductor substrate.
摘要翻译：提供具有优异光电转换特性的资源节约型光电转换装置。分离单晶半导体衬底（通常为单晶硅衬底）的薄部分，以使用作为单晶半导体衬底的分离薄的部分的薄单晶半导体层来构造光电转换器件。通过利用电压加速的离子照射基板的方法或者使用产生多光子吸收的激光束照射基板的方法来分离单晶半导体基板的薄部分。通过在单晶半导体衬底的分离薄的部分上堆叠包括非单晶半导体层的单位电池，可以获得所谓的串联型光电转换装置。

37. 发明授权

US09024309B2 Display device 有权
公开(公告)号：US09024309B2
公开(公告)日：2015-05-05
申请号：US12556704
申请日：2009-09-10
申请人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
发明人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
IPC分类号： H01L33/00 , H01L27/12 , G02F1/1362 , H01L27/02 , H01L29/786
摘要： A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

38. 发明授权

US09012993B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09012993B2
公开(公告)日：2015-04-21
申请号：US13549864
申请日：2012-07-16
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L29/786 , H01L29/417 , H01L27/02 , H01L27/07 , H01L27/108 , H01L27/115 , H01L27/12 , H01L49/02 , G11C11/404
CPC分类号： H01L27/1255 , G11C11/404 , H01L27/0207 , H01L27/0733 , H01L27/10805 , H01L27/1085 , H01L27/10873 , H01L27/1156 , H01L27/1225 , H01L28/40 , H01L28/60 , H01L29/24 , H01L29/41733 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要： An object of the present invention is to provide a semiconductor device in which stored data can be held even when power is not supplied for a certain time. Another object is to increase the degree of integration of a semiconductor device and to increase the storage capacity per unit area. A semiconductor device is formed with a material capable of sufficiently reducing off-state current of a transistor, such as an oxide semiconductor material that is a wide-bandgap semiconductor. With the use of a semiconductor material capable of sufficiently reducing off-state current of a transistor, the semiconductor device can hold data for a long time. Furthermore, a wiring layer provided under a transistor, a high-resistance region in an oxide semiconductor film, and a source electrode are used to form a capacitor, thereby reducing the area occupied by the transistor and the capacitor.
摘要翻译：本发明的一个目的是提供一种即使在一定时间内没有供电也可以保存存储的数据的半导体器件。另一个目的是增加半导体器件的集成度并增加每单位面积的存储容量。半导体器件形成有能够充分降低诸如作为宽带隙半导体的氧化物半导体材料的晶体管的截止电流的材料。通过使用能够充分降低晶体管的截止电流的半导体材料，半导体器件可以长时间保存数据。此外，使用设置在晶体管下方的布线层，氧化物半导体膜中的高电阻区域和源电极来形成电容器，从而减小晶体管和电容器占据的面积。

39. 发明授权

US09012949B2 Light-emitting module, light-emitting device, and method for manufacturing the light-emitting module 有权
标题翻译：发光模块，发光装置以及发光模块的制造方法
公开(公告)号：US09012949B2
公开(公告)日：2015-04-21
申请号：US13543715
申请日：2012-07-06
申请人： Shunpei Yamazaki , Satoshi Seo , Hideto Ohnuma , Hajime Kimura , Yasuhiro Jinbo
发明人： Shunpei Yamazaki , Satoshi Seo , Hideto Ohnuma , Hajime Kimura , Yasuhiro Jinbo
IPC分类号： H01L33/36 , H01L51/52 , H01L27/32
CPC分类号： H01L51/5246 , G02F1/133514 , G02F1/133603 , G02F1/1339 , G02F1/1368 , H01L27/322 , H01L27/3246 , H01L51/0096 , H01L51/524 , H01L51/5253 , H01L2251/5315
摘要： A highly reliable light-emitting module or light-emitting device is provided. A method for manufacturing a highly reliable light-emitting module is provided. The light-emitting module includes, between a first substrate and a second substrate, a first electrode provided over the first substrate, a second electrode provided over the first electrode with a layer containing a light-emitting organic compound interposed therebetween, and a sacrifice layer formed using a liquid material provided over the second electrode.
摘要翻译：提供了高度可靠的发光模块或发光装置。提供一种用于制造高度可靠的发光模块的方法。发光模块在第一基板和第二基板之间包括设置在第一基板上的第一电极，设置在第一电极上的第二电极，其间插入有发光有机化合物的层，牺牲层使用设置在第二电极上的液体材料形成。

40. 发明授权

US09006051B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09006051B2
公开(公告)日：2015-04-14
申请号：US12423563
申请日：2009-04-14
申请人： Yoshiaki Oikawa , Masayuki Kajiwara , Masataka Nakada , Masami Jintyou , Shunpei Yamazaki
发明人： Yoshiaki Oikawa , Masayuki Kajiwara , Masataka Nakada , Masami Jintyou , Shunpei Yamazaki
IPC分类号： H01L21/56 , H01L21/336 , H01L27/12 , H01L23/31
CPC分类号： H01L27/1266 , H01L21/568 , H01L23/3107 , H01L23/3114 , H01L27/1214 , H01L29/78606 , H01L29/78666 , H01L29/78669 , H01L2924/0002 , H01L2924/12044 , H01L2924/19041 , H01L2924/00
摘要： An object is to improve water resistance and reliability of a semiconductor device by reducing the degree of peeling of a film. In a semiconductor device, a first inorganic insulating layer, a semiconductor element layer, a second inorganic insulating layer, an organic insulating layer, and a third inorganic insulating layer are sequentially stacked over a substrate. The second inorganic insulating layer is in contact with the first inorganic insulating layer in an opening portion provided in the semiconductor element layer. The third inorganic insulating layer is in contact with the second inorganic insulating layer in an opening portion provided in the organic insulating layer. In a region where the second inorganic insulating layer and the third inorganic insulating layer are in contact with each other, the second inorganic insulating layer has a plurality of irregularities or openings.
摘要翻译：本发明的目的是通过降低膜的剥离度来提高半导体器件的耐水性和可靠性。在半导体装置中，将第一无机绝缘层，半导体元件层，第二无机绝缘层，有机绝缘层和第三无机绝缘层依次层叠在基板上。第二无机绝缘层在设置在半导体元件层中的开口部分与第一无机绝缘层接触。第三无机绝缘层在设置在有机绝缘层中的开口部分与第二无机绝缘层接触。在第二无机绝缘层和第三无机绝缘层相互接触的区域中，第二无机绝缘层具有多个不规则或开口。

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