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31. 发明授权

US09236625B2 Solid oxide fuel cell system 有权
标题翻译：固体氧化物燃料电池系统
公开(公告)号：US09236625B2
公开(公告)日：2016-01-12
申请号：US14342965
申请日：2012-09-06
申请人： Toshiharu Otsuka , Katsuhisa Tsuchiya , Takuya Matsuo , Yousuke Akagi
发明人： Toshiharu Otsuka , Katsuhisa Tsuchiya , Takuya Matsuo , Yousuke Akagi
IPC分类号： H01M8/06 , H01M8/04 , H01M8/12
CPC分类号： H01M8/0618 , H01M8/04738 , H01M8/04776 , H01M8/04955 , H01M2008/1293 , Y02E60/50
摘要： To provide a solid oxide fuel cell system with which the durable lifespan of the reformer can be extended by suppressing temperature unevenness in the reformer. The present invention is a solid oxide fuel cell, including a fuel cell module, a reformer for producing hydrogen by POX, ATR, and SR steps; a fuel supply apparatus, a reform air supply apparatus, a water supply apparatus, a generating air supply apparatus, and a control device which, as the temperature inside the fuel cell module rises, executes in sequence POX, ATR and SR steps at predetermined respective temperature bands, and causes a rise in temperature at which electrical generation is possible; wherein the control device comprises a localized temperature rise suppression circuit which, by causing steam reforming to occur locally within the reformer in the POX step, suppresses localized temperature rises in the reformer.
摘要翻译：提供一种固体氧化物燃料电池系统，通过抑制重整器中的温度不均匀性，能够延长重整器的耐用寿命。本发明是一种固体氧化物燃料电池，其包括燃料电池模块，用于通过POX，ATR和SR步骤生产氢的重整器; 燃料供给装置，改型空气供给装置，供水装置，发电用空气供给装置以及控制装置，其中，随着燃料电池模块上升的温度上升，POX，ATR，SR分别按照规定的各个温度带，导致可能发电的温度升高; 其中所述控制装置包括局部升温抑制电路，其通过在POX步骤中使重整器局部发生蒸汽重整来抑制重整器中的局部温度上升。

32. 发明授权

US09214690B2 Solid oxide fuel cell device 有权
标题翻译：固体氧化物燃料电池装置
公开(公告)号：US09214690B2
公开(公告)日：2015-12-15
申请号：US13823906
申请日：2011-09-28
申请人： Toshiharu Otsuka , Katsuhisa Tsuchiya , Tsukasa Shigezumi , Toshiharu Ooe , Kiyotaka Nakano , Takuya Matsuo
发明人： Toshiharu Otsuka , Katsuhisa Tsuchiya , Tsukasa Shigezumi , Toshiharu Ooe , Kiyotaka Nakano , Takuya Matsuo
IPC分类号： H01M8/06 , H01M8/04 , C01B3/02 , H01M8/24 , H01M8/12
CPC分类号： H01M8/0606 , C01B3/02 , C01B3/34 , C01B2203/0233 , C01B2203/0244 , C01B2203/0261 , C01B2203/066 , C01B2203/0816 , C01B2203/1258 , C01B2203/1604 , C01B2203/1619 , C01B2203/169 , H01M8/04022 , H01M8/04052 , H01M8/04089 , H01M8/04223 , H01M8/04268 , H01M8/0432 , H01M8/04373 , H01M8/04701 , H01M8/04738 , H01M8/04753 , H01M8/04761 , H01M8/04776 , H01M8/0618 , H01M8/0625 , H01M8/0662 , H01M8/0668 , H01M8/2425 , H01M8/243 , H01M8/2475 , H01M2008/1293 , Y02E60/50 , Y02E60/525
摘要： A solid oxide fuel cell device is provided which prevents excessive rising of the temperature inside a fuel cell module during the startup process. In a startup process, control unit controls to cause a transition from a fuel gas reforming reaction process to a POX process, an ATR process, and a SR process, then to a generating process; when the cell stack temperature and reformer temperature in each process satisfy respectively set transition conditions, a transition to the next process takes place; if control unit determines a temperature rise assist state exists, it executes an excess temperature rise suppression control so that during at least the transition to the generating process, the reformer temperature does not exceed a predetermined value.
摘要翻译：提供固体氧化物燃料电池装置，其防止在启动过程中燃料电池模块内的温度过度上升。在启动过程中，控制单元控制从燃料气体重整反应过程转变到POX过程，ATR过程和SR过程，然后进行生成过程; 当每个过程中的电池堆温度和重整器温度分别满足设定的转变条件时，发生向下一过程的转变; 如果控制单元确定温度上升辅助状态存在，则执行过度的升温抑制控制，使得在至少转换到生成过程中，重整器温度不超过预定值。

33. 发明授权

US09196743B2 Field effect device with oxide semiconductor layer 有权
标题翻译：具有氧化物半导体层的场效应器件
公开(公告)号：US09196743B2
公开(公告)日：2015-11-24
申请号：US13860855
申请日：2013-04-11
申请人： Masatoshi Yokoyama , Tsutomu Murakawa , Kenichi Okazaki , Masayuki Sakakura , Takuya Matsuo , Akihiro Oda , Shigeyasu Mori , Yoshitaka Yamamoto
发明人： Masatoshi Yokoyama , Tsutomu Murakawa , Kenichi Okazaki , Masayuki Sakakura , Takuya Matsuo , Akihiro Oda , Shigeyasu Mori , Yoshitaka Yamamoto
IPC分类号： H01L29/10 , H01L29/786
CPC分类号： H01L29/7869
摘要： Provided is a semiconductor device in which generation of a parasitic channel in an end region of an oxide semiconductor film is suppressed. The semiconductor device includes a gate electrode, an oxide semiconductor film, a source electrode and a drain electrode, and a channel region formed in the oxide semiconductor film. The channel region is formed between a first side surface of the source electrode and a second side surface of the drain electrode opposite to the first side surface. The oxide semiconductor film has an end region which does not overlap with the gate electrode. The end region which does not overlap with the gate electrode is positioned between a first region that is the nearest to one end of the first side surface and a second region that is the nearest to one end of the second side surface.
摘要翻译：提供了抑制氧化物半导体膜的端部区域中的寄生通道的产生的半导体装置。半导体器件包括栅电极，氧化物半导体膜，源电极和漏极，以及形成在氧化物半导体膜中的沟道区。沟道区形成在源电极的第一侧表面和与第一侧表面相对的漏电极的第二侧表面之间。氧化物半导体膜具有不与栅电极重叠的端部区域。不与栅电极重叠的端部区域位于最靠近第一侧表面的一端的第一区域和最靠近第二侧表面的一端的第二区域之间。

34. 发明申请

US20140242489A1 SOLID OXIDE FUEL CELL SYSTEM 有权
标题翻译：固体氧化物燃料电池系统
公开(公告)号：US20140242489A1
公开(公告)日：2014-08-28
申请号：US14347983
申请日：2011-09-29
申请人： Toshiharu Otsuka , Katsuhisa Tsuchiya , Tsukasa Shigezumi , Toshiharu Ooe , Kiyotaka Nakano , Takuya Matsuo
发明人： Toshiharu Otsuka , Katsuhisa Tsuchiya , Tsukasa Shigezumi , Toshiharu Ooe , Kiyotaka Nakano , Takuya Matsuo
IPC分类号： H01M8/04
CPC分类号： H01M8/04902 , H01M8/04626 , H01M8/04753 , H01M8/0491 , H01M8/243 , H01M8/2465 , H01M2008/1293 , Y02E60/50 , Y02E60/525
摘要： To provide a solid oxide fuel cell system capable of efficiently and simply controlling a low speed fuel cell module and a high speed inverter. The invention is a solid oxide fuel cell system, comprising: a fuel cell module, a fuel flow regulator unit, a control section comprising a first power demand detection circuit for controlling the fuel supply amount and for setting the value of current extractable from the fuel cell module; an inverter for extracting current from fuel cell module; and a second power demand detection circuit; and having an inverter control section for controlling the inverter independently from the fuel cell controller so that a current responsive to power demand is extracted from the fuel cell module in a range not exceeding the extractable current value input from the fuel cell controller.
摘要翻译：提供能够有效且简单地控制低速燃料电池模块和高速逆变器的固体氧化物燃料电池系统。本发明是一种固体氧化物燃料电池系统，包括：燃料电池模块，燃料流量调节器单元，控制部分，包括用于控制燃料供应量的第一电力需求检测电路和用于设定从燃料中提取的电流的值电池模块; 用于从燃料电池模块提取电流的逆变器; 和第二功率需求检测电路; 并且具有逆变器控制部分，用于独立于燃料电池控制器控制逆变器，使得在不超过从燃料电池控制器输入的可提取电流值的范围内，从燃料电池模块提取响应于电力需求的电流。

35. 发明申请

US20140212778A1 SOLID OXIDE FUEL CELL SYSTEM 有权
标题翻译：固体氧化物燃料电池系统
公开(公告)号：US20140212778A1
公开(公告)日：2014-07-31
申请号：US14342965
申请日：2012-09-06
申请人： Toshiharu Otsuka , Katsuhisa Tsuchiya , Takuya Matsuo , Yousuke Akagi
发明人： Toshiharu Otsuka , Katsuhisa Tsuchiya , Takuya Matsuo , Yousuke Akagi
IPC分类号： H01M8/06
CPC分类号： H01M8/0618 , H01M8/04738 , H01M8/04776 , H01M8/04955 , H01M2008/1293 , Y02E60/50
摘要： To provide a solid oxide fuel cell system with which the durable lifespan of the reformer can be extended by suppressing temperature unevenness in the reformer. The present invention is a solid oxide fuel cell, including a fuel cell module, a reformer for producing hydrogen by POX, ATR, and SR steps; a fuel supply apparatus, a reform air supply apparatus, a water supply apparatus, a generating air supply apparatus, and a control device which, as the temperature inside the fuel cell module rises, executes in sequence POX, ATR and SR steps at predetermined respective temperature bands, and causes a rise in temperature at which electrical generation is possible; wherein the control device comprises a localized temperature rise suppression circuit which, by causing steam reforming to occur locally within the reformer in the POX step, suppresses localized temperature rises in the reformer.
摘要翻译：提供一种固体氧化物燃料电池系统，通过抑制重整器中的温度不均匀性，能够延长重整器的耐用寿命。本发明是一种固体氧化物燃料电池，其包括燃料电池模块，用于通过POX，ATR和SR步骤生产氢的重整器; 燃料供给装置，改型空气供给装置，供水装置，发电用空气供给装置以及控制装置，其中，随着燃料电池模块上升的温度上升，POX，ATR和SR的步骤按照预定的相应温度带，导致可能发电的温度升高; 其中所述控制装置包括局部升温抑制电路，其通过在POX步骤中使重整器局部发生蒸汽重整来抑制重整器中的局部温度上升。

36. 发明授权

US08785926B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08785926B2
公开(公告)日：2014-07-22
申请号：US13860879
申请日：2013-04-11
申请人： Masatoshi Yokoyama , Tsutomu Murakawa , Kenichi Okazaki , Masayuki Sakakura , Takuya Matsuo , Yosuke Kanzaki , Hiroshi Matsukizono , Yoshitaka Yamamoto
发明人： Masatoshi Yokoyama , Tsutomu Murakawa , Kenichi Okazaki , Masayuki Sakakura , Takuya Matsuo , Yosuke Kanzaki , Hiroshi Matsukizono , Yoshitaka Yamamoto
IPC分类号： H01L29/10
CPC分类号： H01L29/7869 , H01L29/78696
摘要： The semiconductor conductor device includes a gate electrode 106, an oxide semiconductor film 110, a source electrode 114a and a drain electrode 114b, and a channel region formed in the oxide semiconductor film. The channel region is formed between a first side surface 214a of the source electrode and a second side surface 214b of the drain electrode opposite to the first side surface 214a. The oxide semiconductor film has a side surface which overlaps with the gate electrode, which has a first high resistance region positioned between a first region 206a that is the nearest to one end 314a of the first side surface 214a and a second region 206b that is the nearest to one end 314b of the second side surface 214b. The first high resistance region has a corrugated side surface or the like.
摘要翻译：半导体导体器件包括栅电极106，氧化物半导体膜110，源极114a和漏电极114b以及形成在氧化物半导体膜中的沟道区。沟道区形成在源电极的第一侧表面214a和与第一侧表面214a相对的漏电极的第二侧表面214b之间。氧化物半导体膜具有与栅电极重叠的侧面，该侧面具有位于最靠近第一侧面214a的一端314a的第一区域206a和位于第一侧面214a的一端314a的第一区域206a之间的第一高电阻区域，最靠近第二侧表面214b的一端314b。第一高电阻区域具有波纹状的侧面等。

37. 发明申请

US20130270555A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130270555A1
公开(公告)日：2013-10-17
申请号：US13861587
申请日：2013-04-12
申请人： Kenichi Okazaki , Masatoshi Yokoyama , Masayuki Sakakura , Yukinori Shima , Yosuke Kanzaki , Hiroshi Matsukizono , Takuya Matsuo , Yoshitaka Yamamoto
发明人： Kenichi Okazaki , Masatoshi Yokoyama , Masayuki Sakakura , Yukinori Shima , Yosuke Kanzaki , Hiroshi Matsukizono , Takuya Matsuo , Yoshitaka Yamamoto
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , H01L21/02172 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/78696
摘要： An object is to suppress conducting-mode failures of a transistor that uses an oxide semiconductor film and has a short channel length. A semiconductor device includes a gate electrode 304, a gate insulating film 306 formed over the gate electrode, an oxide semiconductor film 308 over the gate insulating film, and a source electrode 310a and a drain electrode 310b formed over the oxide semiconductor film. The channel length L of the oxide semiconductor film is more than or equal to 1 μm and less than or equal to 50 μm. The oxide semiconductor film has a peak at a rotation angle 2θ in the vicinity of 31° in X-ray diffraction measurement.
摘要翻译：目的是抑制使用氧化物半导体膜并具有短沟道长度的晶体管的导通模式故障。半导体器件包括栅电极304，形成在栅电极上的栅极绝缘膜306，栅极绝缘膜上的氧化物半导体膜308以及形成在氧化物半导体膜上的源电极310a和漏电极310b。氧化物半导体膜的沟道长度L大于等于1μm且小于等于50μm。氧化物半导体膜在X射线衍射测定中具有在31°附近的旋转角2θ处的峰值。

38. 发明申请

US20130183600A1 FUEL CELL DEVICE 审中-公开
标题翻译：燃料电池装置
公开(公告)号：US20130183600A1
公开(公告)日：2013-07-18
申请号：US13823867
申请日：2011-09-28
申请人： Toshiharu Otsuka , Katsuhisa Tsuchiya , Tsukasa Shigezumi , Toshiharu Ooe , Kiyotaka Nakano , Takuya Matsuo
发明人： Toshiharu Otsuka , Katsuhisa Tsuchiya , Tsukasa Shigezumi , Toshiharu Ooe , Kiyotaka Nakano , Takuya Matsuo
IPC分类号： H01M8/04
CPC分类号： H01M8/04365 , H01M8/04007 , H01M8/04089 , H01M8/04701 , H01M8/04708 , H01M8/04753
摘要： A fuel cell device capable of appropriately controlling stack temperature both before and after degradation of a fuel cell stack is provided. A fuel cell device furnished with a fuel cell stack, a fuel flow rate regulator unit, an air flow rate regulator unit, a generating chamber temperature sensor, and a control unit, whereby control unit controls supply flow rate AF so that stack temperature Ts is within temperature range A; control unit determines degradation of fuel cell stack and controls flow rate AF so that if fuel cell stack is not degrading, it increases flow rate AF to return stack temperature Ts to within the range A, and if degradation is ongoing, it does not permit an increase in flow rate AF to the supply amount required to return stack temperature Ts to the range A.
摘要翻译：提供能够在燃料电池堆的劣化前后适当地控制堆温度的燃料电池装置。具有燃料电池堆的燃料电池装置，燃料流量调节单元，空气流量调节单元，发电室温度传感器和控制单元，由此控制单元控制供给流量AF，使得堆温度Ts为在温度范围A内; 控制单元确定燃料电池堆的劣化并控制流量AF，使得如果燃料电池堆不劣化，则其增加流速AF以将堆温度Ts返回到范围A内，并且如果劣化正在进行，则不允许将流量AF增加到将堆温度Ts返回到范围A所需的供应量。

39. 发明授权

US07625786B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07625786B2
公开(公告)日：2009-12-01
申请号：US11088888
申请日：2005-03-25
申请人： Naoki Makita , Misako Nakazawa , Hideto Ohnuma , Takuya Matsuo
发明人： Naoki Makita , Misako Nakazawa , Hideto Ohnuma , Takuya Matsuo
IPC分类号： H01L21/84
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02672 , H01L21/02686 , H01L27/1277 , H01L29/78612 , H01L29/78621
摘要： Problems in prior art regarding an n-channel TFT in the source/drain gettering method are solved. In the n-channel TFT, its source/drain regions contain only an n-type impurity. Therefore, compared to a p-channel TFT whose source/drain regions contain an n-type impurity and a higher concentration of p-type impurity, the gettering efficiency is inferior in a channel region of the n-channel transistor. Accordingly, the problem of inferior gettering efficiency in the n-channel TFT can be solved by providing at an end of its source/drain regions a highly efficient gettering region that contains an n-type impurity and a p-type impurity both with the concentration of the p-type impurity set higher than the concentration of the n-type impurity.
摘要翻译：解决了在源极/漏极吸杂方法中关于n沟道TFT的现有技术中的问题。在n沟道TFT中，其源极/漏极区仅包含n型杂质。因此，与源极/漏极区域包含n型杂质和较高浓度的p型杂质的p沟道TFT相比，n沟道晶体管的沟道区域的吸杂效率较差。因此，可以通过在其源极/漏极区域的末端设置包含n型杂质的高效吸气区域和浓度为p型的p型杂质来解决n沟道TFT的吸杂效率差的问题的p型杂质的浓度高于n型杂质浓度。

40. 发明授权

US07202149B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07202149B2
公开(公告)日：2007-04-10
申请号：US11010389
申请日：2004-12-14
申请人： Saishi Fujikawa , Etsuko Asano , Tatsuya Arao , Takashi Yokoshima , Takuya Matsuo , Hidehito Kitakado
发明人： Saishi Fujikawa , Etsuko Asano , Tatsuya Arao , Takashi Yokoshima , Takuya Matsuo , Hidehito Kitakado
IPC分类号： H01L21/4763 , H01L21/3205
CPC分类号： H01L29/78621 , H01L27/1237 , H01L29/42384 , H01L29/49 , H01L29/66757
摘要： A semiconductor device of which manufacturing steps can be simplified by doping impurities at a time, and a manufacturing method thereof. The manufacturing method of the semiconductor device comprises the steps of: forming first and second semiconductor layers over a substrate, forming a first insulating film over the first and second semiconductor layers, forming first and second conductive films thereover, forming a first gate electrode having a stacked layer of the first and second conductive films, in which a portion of the first conductive film is exposed from the second conductive film, over the first semiconductor layer with the first insulating film interposed therebetween, forming a second insulating film over the first insulating film, forming third and fourth conductive films thereover, and forming a second gate electrode having a stacked layer of the third and fourth conductive films, in which a portion of the third conductive film is exposed from the fourth conductive film, over the second semiconductor layer with the first and second insulating films interposed therebetween.
摘要翻译：通过一次掺杂杂质可以简化制造步骤的半导体器件及其制造方法。半导体器件的制造方法包括以下步骤：在衬底上形成第一和第二半导体层，在第一和第二半导体层上形成第一绝缘膜，在其上形成第一和第二导电膜，形成具有将第一导电膜的一部分从第二导电膜露出的第一导电膜和第二导电膜的第一绝缘膜在第一绝缘膜之上形成第二绝缘膜，在其上形成第三和第四导电膜，并且形成第二栅电极，其具有第三导电膜和第四导电膜的堆叠层，其中第三导电膜的一部分从第四导电膜暴露在第二半导体层上，其间插入第一绝缘膜和第二绝缘膜。

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