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31. 发明授权

US08565010B2 Magnetic random access memory with field compensating layer and multi-level cell 有权
标题翻译：具有场补偿层和多级单元的磁随机存取存储器
公开(公告)号：US08565010B2
公开(公告)日：2013-10-22
申请号：US13099321
申请日：2011-05-02
申请人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Jing Zhang
发明人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Jing Zhang
IPC分类号： G11C11/15
CPC分类号： G11C11/16 , G11C11/161 , H01L43/02
摘要： A spin toque transfer magnetic random access memory (STTMRAM) element comprises a reference layer formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed on top of the reference layer and a free layer is formed on top of the junction layer with a perpendicular magnetic orientation, at substantially its center of the free layer and switchable. A spacer layer is formed on top of the free layer and a fixed layer is formed on top of the spacer layer, the fixed layer has a fixed perpendicular magnetic component opposite to that of the reference layer. The magnetic orientation of the free layer switches relative to that of the fixed layer. The perpendicular magnetic components of the fixed layer and the reference layer substantially cancel each other and the free layer has an in-plane edge magnetization field.
摘要翻译：自旋转矩磁性随机存取存储器（STTMRAM）元件包括形成在基板上的参考层，具有固定的垂直磁性分量。接合层形成在参考层的顶部，并且在接合层的顶部上以自由层的大致中心位置处具有垂直磁性取向形成自由层。间隔层形成在自由层的顶部，固定层形成在间隔层的顶部，固定层具有与基准层相反的固定的垂直磁性部件。自由层的磁性取向相对于固定层的磁性取向。固定层和参考层的垂直磁性分量基本相互抵消，自由层具有面内边缘磁化场。

32. 发明授权

US08492860B2 Magnetic random access memory with switching assist layer 有权
标题翻译：具有开关辅助层的磁性随机存取存储器
公开(公告)号：US08492860B2
公开(公告)日：2013-07-23
申请号：US13289372
申请日：2011-11-04
申请人： Yuchen Zhou , Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Roger Klas Malmhall
发明人： Yuchen Zhou , Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Roger Klas Malmhall
IPC分类号： H01L29/82
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/08 , H01L43/10
摘要： A STTMRAM element includes a magnetization layer made of a first free layer and a second free layer, separated by a non-magnetic separation layer (NMSL), with the first and second free layers each having in-plane magnetizations that act on each other through anti-parallel coupling. The direction of the magnetization of the first and second free layers each is in-plane prior to the application of electrical current to the STTMRAM element and thereafter, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued to the STTMRAM element, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.
摘要翻译： STTMRAM元件包括由非磁性分离层（NMSL）隔开的由第一自由层和第二自由层制成的磁化层，第一和第二自由层各自具有彼此作用的面内磁化反平行耦合。在向STTMRAM元件施加电流之前，第一自由层和第二自由层的磁化方向各自在同一平面内，此后，第二自由层的磁化方向基本上标称为平面外，并且第一自由层开关的磁化方向。当电流停止到STTMRAM元件时，第二自由层的磁化方向保持在与第一自由层基本相反的方向上。

33. 发明授权

US08490279B2 Method of manufacturing an enhanced hard bias layer in thin film magnetoresistive sensors 有权
标题翻译：在薄膜磁阻传感器中制造增强型硬偏置层的方法
公开(公告)号：US08490279B2
公开(公告)日：2013-07-23
申请号：US12924363
申请日：2010-09-24
申请人： Yuchen Zhou , Kenichi Takano , Kunliang Zhang
发明人： Yuchen Zhou , Kenichi Takano , Kunliang Zhang
IPC分类号： G11B5/187
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49046 , Y10T428/1107 , Y10T428/115
摘要： A method of forming a hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed. A HB layer is formed with easy axis growth perpendicular to an underlying seed layer which is formed above a substrate and along two sidewalls of the sensor. In one embodiment, a conformal soft magnetic layer that may be a top shield is deposited on the HB layer to provide direct exchange coupling that compensates HB surface charges. Optionally, a thin capping layer on the HB layer enables magneto-static shield-HB coupling. After HB initialization, HB regions along the sensor sidewalls have magnetizations that are perpendicular to the sidewalls as a result of surface charges near the seed layer. Sidewalls may be extended into the substrate (bottom shield) to give enhanced protection against side reading.
摘要翻译：公开了形成用于纵向偏置MR传感器中的自由层的硬偏置（HB）结构的方法。形成具有垂直于底层种子层的易于轴生长的HB层，其形成在衬底上并沿着传感器的两个侧壁。在一个实施例中，可以是顶部屏蔽的共形软磁性层沉积在HB层上以提供补偿HB表面电荷的直接交换耦合。可选地，HB层上的薄覆盖层可实现磁静电屏蔽-HB耦合。在HB初始化之后，沿着传感器侧壁的HB区域由于种子层附近的表面电荷而具有垂直于侧壁的磁化。侧壁可以延伸到基板（底部屏蔽）中，以提供更强的防侧读保护。

34. 发明授权

US08477453B2 Perpendicular magnetic recording write head with milling defined track width 有权
标题翻译：垂直磁记录写头具有铣削定义的轨道宽度
公开(公告)号：US08477453B2
公开(公告)日：2013-07-02
申请号：US12799927
申请日：2010-05-05
申请人： Kenichi Takano , Yuchen Zhou , Min Li , Joe Smyth
发明人： Kenichi Takano , Yuchen Zhou , Min Li , Joe Smyth
IPC分类号： G11B5/31
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/314 , G11B5/315 , G11B5/3163 , G11B2005/0024
摘要： A main pole layer having at least a leading taper and trimmed pole tip portion is described. The leading taper increases head field up to ≧15000 Oe even for narrow track widths approaching 50 nm. For MAMR applications, a STO and trailing shield are sequentially formed on a trailing pole tip side. Furthermore, full side shields may be added to reduce fringing field. Another embodiment involves including both of a leading taper and trailing taper at the pole tip where leading taper angle is between 20° and 60° and trailing taper angle is from 10° to 45°. A method is provided for forming various embodiments of the present invention. A key feature is that milling depth at an effective neck height distance is greater than or equal to the pole tip thickness. A self aligned STO may be formed by the same ion milling step that defines track width.
摘要翻译：描述了至少具有前导锥形和微调极尖部分的主极层。即使对于接近50nm的窄轨道宽度，领先的锥形也增加了头部场>达15000 Oe。对于MAMR应用，STO和后屏蔽依次形成在尾极端侧。此外，可以添加全侧屏蔽以减少边缘场。另一实施例涉及在极尖处包括前导锥形和后锥形两者，其中前锥度角在20°至60°之间，后锥角度为10°至45°。提供了一种用于形成本发明的各种实施例的方法。一个关键特征是在有效颈部高度距离处的铣削深度大于或等于极尖厚度。可以通过定义轨道宽度的相同离子铣削步骤形成自对准STO。

35. 发明申请

US20130021842A1 INITIALIZATION METHOD OF A PERPENDICULAR MAGNETIC RANDOM ACCESS MEMORY (MRAM) DEVICE WITH A STABLE REFERENCE CELL 有权
标题翻译：具有稳定参考电压的全息磁性随机存取存储器（MRAM）器件的初始化方法
公开(公告)号：US20130021842A1
公开(公告)日：2013-01-24
申请号：US13360553
申请日：2012-01-27
申请人： Yuchen Zhou , Yiming Huai
发明人： Yuchen Zhou , Yiming Huai
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , G11C11/161 , G11C11/5607 , Y10S977/933 , Y10S977/935
摘要： A method of initializing a magnetic random access memory (MRAM) element that is configured to store a state when electric current flows therethrough is disclosed. The MRAM element includes a first magnetic tunnel junction (MTJ) for storing a data bit and a second MTJ for storing a reference bit. Each MTJ further includes a magnetic reference layer (RL) having a magnetization with a direction that is perpendicular to the film plane, and a magnetic pinned layer (PL) having a magnetization with a direction that is perpendicular to the film plane. The direction of magnetization of the RL and the PL are anti-parallel relative to each other in the first MTJ. The direction of magnetization of the FL, the RL and the PL are parallel relative to each other in the second MTJ for storing reference bit.
摘要翻译：公开了一种初始化磁性随机存取存储器（MRAM）元件的方法，该磁性随机存取存储器被配置为在电流流经时存储状态。 MRAM元件包括用于存储数据位的第一磁性隧道结（MTJ）和用于存储参考位的第二MTJ。每个MTJ还包括具有垂直于膜平面的方向的磁化的磁参考层（RL）和具有与膜平面垂直的方向的磁化的磁性固定层（PL）。在第一MTJ中，RL和PL的磁化方向相对于彼此是反平行的。在第二MTJ中，FL，RL和PL的磁化方向相对于彼此平行，用于存储参考位。

36. 发明申请

US20130021841A1 PERPENDICULAR MAGNETIC RANDOM ACCESS MEMORY (MRAM) DEVICE WITH A STABLE REFERENCE CELL 有权
标题翻译：具有稳定参考电压的全频磁性随机存取存储器（MRAM）器件
公开(公告)号：US20130021841A1
公开(公告)日：2013-01-24
申请号：US13360524
申请日：2012-01-27
申请人： Yuchen Zhou , Yiming Huai
发明人： Yuchen Zhou , Yiming Huai
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , G11C11/161 , G11C11/5607 , Y10S977/933 , Y10S977/935
摘要： A magnetic random access memory (MRAM) element is configured to store a state when electric current flows and includes a first magnetic tunnel junction (MTJ) for storing a data bit and a second MTJ for storing a reference bit. The direction of magnetization of the FL is determinative of the data bit stored in the at least one MTJ. Further, the MTJ includes a magnetic reference layer (RL) having a magnetization with a direction that is perpendicular to the film plane, and a magnetic pinned layer (PL) having a magnetization with a direction that is perpendicular to the film plane. The direction of magnetization of the RL and the PL are anti-parallel relative to each other in the first MTJ. The direction of magnetization of the FL, the RL and the PL are parallel relative to each other in the second MTJ.
摘要翻译：磁性随机存取存储器（MRAM）元件被配置为存储电流流动时的状态，并且包括用于存储数据位的第一磁性隧道结（MTJ）和用于存储参考位的第二MTJ。 FL的磁化方向决定了存储在至少一个MTJ中的数据位。此外，MTJ包括具有与膜平面垂直的方向的磁化的磁性参考层（RL）和具有与膜平面垂直的方向具有磁化的磁性固定层（PL）。在第一MTJ中，RL和PL的磁化方向相对于彼此是反平行的。 FL，RL和PL的磁化方向在第二MTJ中相对于彼此平行。

37. 发明申请

US20120295370A1 MAGNETIC RANDOM ACCESS MEMORY (MRAM) WITH ENHANCED MAGNETIC STIFFNESS AND METHOD OF MAKING SAME 有权
标题翻译：具有增强磁力的MAGNETIC RANDOM ACCESS MEMORY（MRAM）及其制造方法
公开(公告)号：US20120295370A1
公开(公告)日：2012-11-22
申请号：US13238972
申请日：2011-09-21
申请人： Yuchen Zhou , Yiming Huai
发明人： Yuchen Zhou , Yiming Huai
IPC分类号： H01L21/02
CPC分类号： G11C11/161 , H01L43/12
摘要： A STTMRAM element has a free sub-layer with enhanced internal stiffness. A first free sub-layer is made partially of boron (B), annealing is performed of the STTMRAM element at a first temperature to reduce the B content at an interface between the first free sub-layer and the barrier layer, the annealing causing a second free sub-layer to be formed on top of the first free sub-layer and being made partially of B, with an amount greater than the amount of B in the first free sub-layer. The STTMRAM element is cooled to a second temperature that is lower than the first temperature and a third free sub-layer is deposited directly on top of the second free layer, with the third free sub-layer being made partially of boron B. The amount of B in the third sub-free layer is less than the amount of B in the second free sub-layer.
摘要翻译： STTMRAM元件具有增强的内部刚度的自由子层。第一自由子层部分地由硼（B）制成，在第一温度下对STTMRAM元件进行退火以降低第一自由子层与阻挡层之间的界面处的B含量，退火引起第二自由子层形成在第一自由子层的顶部上并且部分地由B制成，其量大于第一自由子层中的B的量。 STTMRAM元件被冷却到低于第一温度的第二温度，第三自由子层直接沉积在第二自由层的顶部上，第三自由子层部分由硼B构成。量在第三自由层中的B的含量小于第二自由子层中的B的量。

38. 发明授权

US08300356B2 CoFe/Ni Multilayer film with perpendicular anistropy for microwave assisted magnetic recording 有权
标题翻译： CoFe / Ni多层薄膜与微波辅助磁记录的垂直成像
公开(公告)号：US08300356B2
公开(公告)日：2012-10-30
申请号：US12800196
申请日：2010-05-11
申请人： Kunliang Zhang , Min Li , Yuchen Zhou
发明人： Kunliang Zhang , Min Li , Yuchen Zhou
IPC分类号： G11B5/235 , G11B5/31 , G11B5/39
CPC分类号： G11B5/235 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11B5/1278 , G11B5/3153 , G11B5/33 , G11B5/3909 , G11B5/3967 , G11B2005/0024 , G11B2005/3996 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01F1/0579 , H01F10/325 , H01F10/3254 , H01F10/3259 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01F41/305 , H01L27/222 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129 , Y10T428/115
摘要： A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.
摘要翻译：公开了具有种子/ SIL /间隔物/ FGL /覆盖构型的自旋转移振荡器，其具有由Ta制成的复合种子层和具有fcc（111）或hcp（001）结构的金属层，以增强垂直磁各向异性（PMA）在叠层（A1 / A2）X层叠自旋注入层（SIL）中。场发生层（FGL）由高Bs材料如FeCo制成。或者，STO具有种子/ FGL /间隔物/ SIL /覆盖配置。 SIL可以包括与（A1 / A2）X层压体交换耦合的FeCo层（x为5至50）以改善坚固性。 FGL可以包括与高Bs层交换耦合的（A1 / A2）Y层叠体（y = 5〜30），以实现更容易的振荡。 A1可以是Co，CoFe或CoFeR中的一种，其中R是金属，A2是Ni，NiCo或NiFe之一。 STO可以形成在写入头中的主极和后屏蔽之间。

39. 发明申请

US20120149123A1 Low Temperature Method to Enhance Detection of Magnetic Beads 有权
标题翻译：低温法检测磁珠
公开(公告)号：US20120149123A1
公开(公告)日：2012-06-14
申请号：US13370850
申请日：2012-02-10
申请人： Yuchen Zhou
发明人： Yuchen Zhou
IPC分类号： G01N27/72
CPC分类号： G01N27/745 , G01R33/1269 , G01R33/5601
摘要： Detection of magnetic beads at temperature below room temperature can increase the signal level significantly as compared to the same detection when performed at room temperature. Additional improvement is obtained if the beads are below 30 nm in size and if deviations of bead size from the median are small. A preferred format for the beads is a suspension of super-paramagnetic particles in a non-magnetic medium.
摘要翻译：与在室温下进行的相同检测相比，在低于室温的温度下磁珠的检测可以显着提高信号水平。如果珠子的尺寸小于30nm，并且如果珠粒尺寸与中位数的偏差小，则可获得额外的改进。珠的优选形式是超顺磁性颗粒在非磁性介质中的悬浮液。

40. 发明申请

US20120147504A1 High resolution magnetic read head 有权
标题翻译：高分辨率磁读头
公开(公告)号：US20120147504A1
公开(公告)日：2012-06-14
申请号：US12928473
申请日：2010-12-13
申请人： Yuchen Zhou , Wenyu Chen , Joe Smyth
发明人： Yuchen Zhou , Wenyu Chen , Joe Smyth
IPC分类号： G11B5/127
CPC分类号： G11B5/3932 , G01R33/098 , G11B5/3909 , G11B2005/3996 , Y10T29/49044 , Y10T29/49048
摘要： A CPP MR read head and its method of fabrication includes a patterned CPP MR sensor stack having a SAF free layer structure that is longitudinally biased by the combination of an exchange biasing layer formed over the sensor stack and hard biasing layers that are formed adjacent to the patterned sides of the stack. The combination provides the stack with high resolution reading capabilities without the necessity for a narrow read gap formed by closely spaced top and bottom shields. Sixteen embodiments are described that provide different versions of the exchange biasing layer, different positions of the hard biasing layers and different patternings of the CPP MR sensor stack.
摘要翻译： CPP MR读取头及其制造方法包括具有SAF自由层结构的图案化CPP MR传感器堆叠，其通过在传感器堆叠上形成的交换偏置层与形成在传感器堆叠附近的硬偏置层的组合而被纵向偏置堆叠的图案侧。该组合提供了具有高分辨率读取能力的堆叠，而不需要由紧密间隔的顶部和底部屏蔽形成的窄读取间隙。描述了提供不同版本的交换偏置层，硬偏置层的不同位置和CPP MR传感器堆叠的不同图案的十六个实施例。

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