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31. 发明授权

US08580647B2 Inductors with through VIAS 有权
标题翻译：通过VIAS的电感器
公开(公告)号：US08580647B2
公开(公告)日：2013-11-12
申请号：US13330127
申请日：2011-12-19
申请人： Hsiao-Tsung Yen , Yu-Ling Lin
发明人： Hsiao-Tsung Yen , Yu-Ling Lin
IPC分类号： H01L21/20
CPC分类号： H01F17/0006 , H01F2017/002 , H01F2017/0053 , H01L23/481 , H01L23/5227 , H01L27/08 , H01L2924/0002 , H01L2924/00
摘要： A device using an inductor with one or more through vias, and a method of manufacture is provided. In an embodiment, an inductor is formed in one or more of the metallization layers. One or more through vias are positioned directly below the inductor. The through vias may extend through one or more dielectric layers interposed between a substrate and the inductors. Additionally, the through vias may extend completely or partially through the substrate.
摘要翻译：提供一种使用具有一个或多个通孔的电感器的装置，以及制造方法。在一个实施例中，在一个或多个金属化层中形成电感器。一个或多个通孔位于电感器正下方。通孔可以延伸穿过介于衬底和电感器之间的一个或多个电介质层。此外，通孔可以完全地或部分地延伸通过衬底。

32. 发明授权

US09633149B2 System and method for modeling through silicon via 有权
公开(公告)号：US09633149B2
公开(公告)日：2017-04-25
申请号：US13419959
申请日：2012-03-14
申请人： Hsiao-Tsung Yen , Yu-Ling Lin , Chin-Wei Kuo
发明人： Hsiao-Tsung Yen , Yu-Ling Lin , Chin-Wei Kuo
IPC分类号： G06F9/455 , G06F17/50 , H01L23/498
CPC分类号： G06F17/5036 , H01L23/49827 , H01L2224/13 , H01L2224/16225 , H01L2924/15311
摘要： A computer implemented system comprises a processor programmed to analyze a circuit to determine a response of the circuit to an input radio frequency (RF) signal, for at least one of designing, manufacturing, and testing the circuit. An interposer model is tangibly embodied in a non-transitory machine readable storage medium to be accessed by the processor. The interposer model is processed by the computer to output data representing a response of a though substrate via (TSV) to the radio frequency (RF) signal. The interposer model comprises a plurality of TSV models. Each TSV model has a respective three-port network. One of the ports of each three-port network is a floating node. The floating nodes of each of the three-port networks are connected to each other.

33. 发明授权

US09059168B2 Adjustable meander line resistor 有权
标题翻译：可调弯管线电阻
公开(公告)号：US09059168B2
公开(公告)日：2015-06-16
申请号：US13365021
申请日：2012-02-02
申请人： Hsiao-Tsung Yen , Yu-Ling Lin
发明人： Hsiao-Tsung Yen , Yu-Ling Lin
IPC分类号： H01L29/00 , H01L23/522 , H01L23/64 , H01L49/02 , H01L27/06 , H01L27/108 , H01L27/08
CPC分类号： H01L23/5228 , H01L23/647 , H01L27/0629 , H01L27/0802 , H01L27/10897 , H01L28/20 , H01L2924/0002 , H01L2924/00
摘要： An adjustable meander line resistor comprises a plurality of series circuits. Each series circuit comprises a first resistor formed on a first doped region of a transistor, a second resistor formed on a second doped region of the transistor and a connector coupled between the first resistor and the second resistor. A control circuit is employed to control the on and off of the transistor so as to achieve the adjustable meander line resistor.
摘要翻译：可调式曲折线电阻器包括多个串联电路。每个串联电路包括形成在晶体管的第一掺杂区域上的第一电阻器，形成在晶体管的第二掺杂区域上的第二电阻器和耦合在第一电阻器和第二电阻器之间的连接器。采用控制电路来控制晶体管的导通和截止，从而实现可调谐的曲折线电阻。

34. 发明授权

US08809073B2 Apparatus and methods for de-embedding through substrate vias 有权
标题翻译：用于通过衬底通孔去嵌入的装置和方法
公开(公告)号：US08809073B2
公开(公告)日：2014-08-19
申请号：US13197602
申请日：2011-08-03
申请人： Hsiao-Tsung Yen , Yu-Ling Lin , Chin-Wei Kuo , Victor Chih Yuan Chang , Min-Chie Jeng
发明人： Hsiao-Tsung Yen , Yu-Ling Lin , Chin-Wei Kuo , Victor Chih Yuan Chang , Min-Chie Jeng
IPC分类号： H01L21/66 , G01R31/26
CPC分类号： G01R31/2644 , H01L22/34 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： A method includes providing on a substrate having at least two through substrate vias (“TSVs”) a plurality of test structures for de-embedding the measurement of the intrinsic characteristics of a device under test (DUT) including at least two of the TSVs; measuring the intrinsic characteristics [L] for a first and a second test structure on the substrate including two pads coupled with a transmission line of length L; using simultaneous solutions of ABCD matrix or T matrix form equations, and the measured intrinsic characteristics, solving for the intrinsic characteristics of the pads and the transmission lines; de-embedding the measurements of the third and fourth test structures using the intrinsic characteristics of the pads and the transmission lines; and using simultaneous solutions of ABCD matrix or T matrix form equations for BM_L and BM_LX, and the measured intrinsic characteristics, solving for the intrinsic characteristics of the TSVs.
摘要翻译：一种方法包括在具有至少两个通过衬底通孔（“TSV”）的衬底上提供多个测试结构，用于对包括至少两个TSV的待测器件（DUT）的固有特性的测量进行解嵌入; 测量包括与长度为L的传输线耦合的两个焊盘的衬底上的第一和第二测试结构的固有特性[L] 使用ABCD矩阵或T矩阵形式方程的同时解，以及测量的固有特性，求解焊盘和传输线的固有特性; 使用焊盘和传输线的固有特性来解嵌第三和第四测试结构的测量; 并且对于BM_L和BM_LX使用ABCD矩阵或T矩阵形式方程的同时解，以及测量的固有特性，求解TSV的固有特性。

35. 发明申请

US20130200447A1 Adjustable Meander Line Resistor 有权
标题翻译：可调式曲折线电阻
公开(公告)号：US20130200447A1
公开(公告)日：2013-08-08
申请号：US13365021
申请日：2012-02-02
申请人： Hsiao-Tsung Yen , Yu-Ling Lin
发明人： Hsiao-Tsung Yen , Yu-Ling Lin
IPC分类号： H01L27/108 , H01L21/02 , H01L27/088
CPC分类号： H01L23/5228 , H01L23/647 , H01L27/0629 , H01L27/0802 , H01L27/10897 , H01L28/20 , H01L2924/0002 , H01L2924/00
摘要： An adjustable meander line resistor comprises a plurality of series circuits. Each series circuit comprises a first resistor formed on a first doped region of a transistor, a second resistor formed on a second doped region of the transistor and a connector coupled between the first resistor and the second resistor. A control circuit is employed to control the on and off of the transistor so as to achieve the adjustable meander line resistor.
摘要翻译：可调式曲折线电阻器包括多个串联电路。每个串联电路包括形成在晶体管的第一掺杂区域上的第一电阻器，形成在晶体管的第二掺杂区域上的第二电阻器和耦合在第一电阻器和第二电阻器之间的连接器。采用控制电路来控制晶体管的导通和截止，从而实现可调谐的曲折线电阻。

36. 发明授权

US08502338B2 Through-substrate via waveguides 有权
标题翻译：通过波导通过基板
公开(公告)号：US08502338B2
公开(公告)日：2013-08-06
申请号：US12878803
申请日：2010-09-09
申请人： Hsiao-Tsung Yen , Hsien-Pin Hu , Chin-Wei Kuo , Sally Liu
发明人： Hsiao-Tsung Yen , Hsien-Pin Hu , Chin-Wei Kuo , Sally Liu
IPC分类号： H01L29/00
CPC分类号： H01L27/0296 , H01L21/76898 , H01L23/481 , H01L23/60 , H01L29/861 , H01L2223/6622 , H01L2224/13023 , H01L2224/13025 , H01L2224/13027 , H01L2224/131 , H01L2224/14181 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014
摘要： A device includes a semiconductor substrate of a first conductivity type, wherein the semiconductor substrate comprises a first surface and a second surface opposite the first surface. A through-substrate via (TSV) extends from the first surface to the second surface of the semiconductor substrate. A well region of a second conductivity type opposite the first conductivity type encircles the TSV, and extends from the first surface to the second surface of the semiconductor substrate.
摘要翻译：一种器件包括第一导电类型的半导体衬底，其中半导体衬底包括与第一表面相对的第一表面和第二表面。贯穿基板通孔（TSV）从半导体基板的第一表面延伸到第二表面。与第一导电类型相反的第二导电类型的阱区域包围TSV，并且从半导体衬底的第一表面延伸到第二表面。

37. 发明申请

US20120061795A1 Through-Substrate Via Waveguides 有权
标题翻译：通孔波导通孔
公开(公告)号：US20120061795A1
公开(公告)日：2012-03-15
申请号：US12878803
申请日：2010-09-09
申请人： Hsiao-Tsung Yen , Hsien-Pin Hu , Chin-Wei Kuo , Sally Liu
发明人： Hsiao-Tsung Yen , Hsien-Pin Hu , Chin-Wei Kuo , Sally Liu
IPC分类号： H01L29/92 , H01L21/265
CPC分类号： H01L27/0296 , H01L21/76898 , H01L23/481 , H01L23/60 , H01L29/861 , H01L2223/6622 , H01L2224/13023 , H01L2224/13025 , H01L2224/13027 , H01L2224/131 , H01L2224/14181 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014
摘要： A device includes a semiconductor substrate of a first conductivity type, wherein the semiconductor substrate comprises a first surface and a second surface opposite the first surface. A through-substrate via (TSV) extends from the first surface to the second surface of the semiconductor substrate. A well region of a second conductivity type opposite the first conductivity type encircles the TSV, and extends from the first surface to the second surface of the semiconductor substrate.
摘要翻译：一种器件包括第一导电类型的半导体衬底，其中半导体衬底包括与第一表面相对的第一表面和第二表面。贯穿基板通孔（TSV）从半导体基板的第一表面延伸到第二表面。与第一导电类型相反的第二导电类型的阱区域包围TSV，并且从半导体衬底的第一表面延伸到第二表面。

38. 发明申请

US20090224791A1 DE-Embedding Method For On-Wafer Devices 有权
标题翻译：晶圆设备的嵌入方法
公开(公告)号：US20090224791A1
公开(公告)日：2009-09-10
申请号：US12042606
申请日：2008-03-05
申请人： Hsiao-Tsung Yen , Tzu-Jin Yeh , Sally Liu
发明人： Hsiao-Tsung Yen , Tzu-Jin Yeh , Sally Liu
IPC分类号： G01R31/27
CPC分类号： G01R31/2884 , H01L22/34
摘要： A method and system for de-embedding an on-wafer device is disclosed. The method comprises representing the intrinsic characteristics of a test structure using a set of ABCD matrix components; determining the intrinsic characteristics arising from the test structure; and using the determined intrinsic characteristics of the test structure to produce a set of parameters representative of the intrinsic characteristics of a device-under-test (“DUT”).
摘要翻译：公开了一种用于去嵌入晶片装置的方法和系统。该方法包括使用一组ABCD矩阵分量表示测试结构的固有特性; 确定测试结构产生的内在特性; 并且使用确定的测试结构的固有特性来产生表示待测器件（“DUT”）的固有特性的一组参数。

39. 发明授权

US08471358B2 3D inductor and transformer 有权
标题翻译： 3D电感和变压器
公开(公告)号：US08471358B2
公开(公告)日：2013-06-25
申请号：US12791705
申请日：2010-06-01
申请人： Hsiao-Tsung Yen , Chin-Wei Kuo , Hsien-Pin Hu , Sally Liu , Ming-Fa Chen , Jhe-Ching Lu
发明人： Hsiao-Tsung Yen , Chin-Wei Kuo , Hsien-Pin Hu , Sally Liu , Ming-Fa Chen , Jhe-Ching Lu
IPC分类号： H01L27/08
CPC分类号： H01L23/5227 , H01F17/0013 , H01F27/2804 , H01L23/49822 , H01L2224/16225 , H01L2224/16227 , H01L2924/00014 , H01L2924/01322 , H01L2924/15311 , H01L2924/15321 , H01L2924/00 , H01L2224/0401
摘要： In accordance with an embodiment, a semiconductor device comprises a semiconductor die, an interposer, and conductive bumps bonding the semiconductor die to the interposer. The semiconductor die comprises a first metallization layer, and the first metallization layer comprises a first conductive pattern. The interposer comprises a second metallization layer, and the second metallization layer comprises a second conductive pattern. Some of the conductive bumps electrically couple the first conductive pattern to the second conductive pattern to form a coil. Other embodiments contemplate other configurations of coils, inductors, and/or transformers, and contemplate methods of manufacture.
摘要翻译：根据实施例，半导体器件包括半导体管芯，插入件和将半导体管芯接合到插入件的导电凸块。半导体管芯包括第一金属化层，第一金属化层包括第一导电图案。插入器包括第二金属化层，并且第二金属化层包括第二导电图案。一些导电凸块将第一导电图案电耦合到第二导电图案以形成线圈。其他实施例考虑了线圈，电感器和/或变压器的其他配置，并考虑了制造方法。

40. 发明授权

US08502620B2 Balun system and method 有权
标题翻译：巴伦系统和方法
公开(公告)号：US08502620B2
公开(公告)日：2013-08-06
申请号：US12944847
申请日：2010-11-12
申请人： Jhe-Ching Lu , Hsiao-Tsung Yen , Sally Liu , Tzu-Jin Yeh , Min-Chie Jeng
发明人： Jhe-Ching Lu , Hsiao-Tsung Yen , Sally Liu , Tzu-Jin Yeh , Min-Chie Jeng
IPC分类号： H01P5/10 , H01P3/08
CPC分类号： H01F21/12 , H01F27/2804 , H01F2027/2809 , H03H7/42 , Y10T29/49117
摘要： A system and method for transmitting signals is disclosed. An embodiment comprises a balun, such as a Marchand balun, which has a first transformer with a primary coil and a first secondary coil and a second transformer with the primary coil and a second secondary coil. The first secondary coil and the second secondary coil are connected to a ground plane, and the ground plane has slot lines located beneath the separation of the coils in the first transformer and the second transformer. The slot lines may also have fingers.
摘要翻译：公开了一种用于发送信号的系统和方法。一个实施例包括一个平衡 - 不平衡变换器，例如Marchand平衡 - 不平衡转换器，其具有带初级线圈的第一变压器和第一次级线圈，以及具有初级线圈的第二变压器和第二次级线圈。第一次级线圈和第二次级线圈连接到接地平面，并且接地平面具有位于第一变压器和第二变压器中的线圈分离下方的槽线。缝线也可以具有手指。

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