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31. 发明授权

US08502902B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08502902B2
公开(公告)日：2013-08-06
申请号：US13039672
申请日：2011-03-03
申请人： Yoshiyuki Kurokawa , Takayuki Ikeda , Hikaru Tamura
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Hikaru Tamura
IPC分类号： H04N5/222
CPC分类号： G06F3/042 , G06F3/0412 , G06F3/0416 , H01L27/1461 , H01L27/14612 , H01L27/14645 , H01L27/14692 , H04N5/2353 , H04N5/351 , H04N5/374
摘要： A semiconductor device obtains highly accurate image data regardless of the intensity of incident light. The semiconductor device includes a first photo sensor provided in a pixel, a second photo sensor provided around the pixel, and a controller for setting the drive condition of the first photo sensor in accordance with the intensity of outside light obtained by the second photo sensor. An image is taken after the sensitivity of the first photo sensor is changed in accordance with the drive condition set by the controller. Thus, in the semiconductor device, an image can be taken using the first photo sensor whose sensitivity is optimized in accordance with the intensity of incident light.
摘要翻译：半导体器件无论入射光的强度如何，都能获得高精度的图像数据。半导体器件包括设置在像素中的第一光电传感器，设置在像素周围的第二光电传感器，以及用于根据由第二光传感器获得的外部光的强度来设定第一光传感器的驱动条件的控制器。在根据由控制器设置的驱动条件改变第一光传感器的灵敏度之后拍摄图像。因此，在半导体器件中，可以使用根据入射光强度优化灵敏度的第一光电传感器拍摄图像。

32. 发明授权

US08461590B2 Photodetector circuit, input device, and input/output device 有权
标题翻译：光电检测器电路，输入设备和输入/输出设备
公开(公告)号：US08461590B2
公开(公告)日：2013-06-11
申请号：US13313539
申请日：2011-12-07
申请人： Hikaru Tamura , Yoshiyuki Kurokawa , Takayuki Ikeda
发明人： Hikaru Tamura , Yoshiyuki Kurokawa , Takayuki Ikeda
IPC分类号： H01L29/04
CPC分类号： H01L27/14692
摘要： An adverse effect of parasitic capacitance on optical data output from a photodetector circuit is suppressed. A photodetector circuit includes a photoelectric conversion element; a first field-effect transistor; a second field-effect transistor; a first conductive layer functioning as a gate of the first field-effect transistor; an insulating layer provided over the first conductive layer; a semiconductor layer overlapping with the first conductive layer with the insulating layer interposed therebetween; a second conductive layer electrically connected to the semiconductor layer; and a third conductive layer electrically connected to the semiconductor layer, whose pair of side surfaces facing each other overlaps with at least one conductive layer including the first conductive layer with the insulating layer interposed therebetween, and which functions as the other of the source and the drain of the first field-effect transistor.
摘要翻译：抑制寄生电容对光检测器电路的光数据输出的不良影响。光检测器电路包括光电转换元件; 第一场效应晶体管; 第二场效应晶体管; 用作第一场效应晶体管的栅极的第一导电层; 设置在第一导电层上的绝缘层; 半导体层与第一导电层重叠，绝缘层插入其间; 电连接到半导体层的第二导电层; 电连接到所述半导体层的第三导电层，所述第三导电层与所述半导体层相对，所述第一导电层的一对侧表面与包括所述第一导电层的至少一个导电层重叠，所述第一导电层的绝缘层位于所述半导体层之间，并且其作为源和第一场效应晶体管的漏极。

33. 发明授权

US09348165B2 Display device and electronic book 有权
标题翻译：显示设备和电子书
公开(公告)号：US09348165B2
公开(公告)日：2016-05-24
申请号：US13085259
申请日：2011-04-12
申请人： Yoshiyuki Kurokawa , Takayuki Ikeda , Takeshi Aoki
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Takeshi Aoki
IPC分类号： G02F1/1333 , G09G3/36 , G06F3/041 , G06F3/042 , G02F1/133 , G02F1/1334
CPC分类号： G02F1/13338 , G02F1/13318 , G02F1/1334 , G02F2001/13312 , G02F2001/133391 , G06F3/0412 , G06F3/042 , G09G3/3648 , G09G2360/142 , G09G2380/14
摘要： It is an object to provide a display device exhibiting high visibility and having a touch recognition function. The display device includes a display portion and a sensor portion. The display portion includes a first liquid crystal element including a polymer-scattered liquid crystal. The sensor portion includes a light-receiving element and a second liquid crystal element including a polymer-dispersed liquid crystal provided over the light-receiving element. The first liquid crystal element and the second liquid crystal element are driven independently from each other. The light-receiving element receives light transmitting through the second liquid crystal element.
摘要翻译：本发明的目的是提供具有高可见度并具有触摸识别功能的显示装置。显示装置包括显示部分和传感器部分。显示部分包括包含聚合物散射液晶的第一液晶元件。传感器部分包括光接收元件和设置在光接收元件上的聚合物分散液晶的第二液晶元件。第一液晶元件和第二液晶元件彼此独立地驱动。光接收元件接收透过第二液晶元件的光。

34. 发明授权

US09841843B2 Semiconductor device and driving method thereof 有权
公开(公告)号：US09841843B2
公开(公告)日：2017-12-12
申请号：US13325497
申请日：2011-12-14
申请人： Yoshiyuki Kurokawa , Takayuki Ikeda , Takeshi Aoki
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Takeshi Aoki
IPC分类号： G06F3/042 , G06F3/041 , H01L27/146 , H01L29/786 , H01L27/32
CPC分类号： G06F3/042 , G06F3/0412 , H01L27/14609 , H01L27/14643 , H01L27/323 , H01L27/3234 , H01L29/7869
摘要： A semiconductor device with high definition, which includes a plurality of sets each including a photosensor and a display element including a light-emitting element arranged in a matrix is provided, wherein a power supply line electrically connected to the display element also serves as a power supply line electrically connected to the photosensor. Thus, the semiconductor device with high definition can be provided without decreasing the width of each power supply line. Thus, the definition of the semiconductor device can be improved while securing the stability of the potential of the power supply line. The stability of the potential of the power supply line leads to the stability of the driving voltage of the display element and the stability of the driving voltage of the photosensor. Accordingly, the semiconductor device with high definition, high display quality, and high accuracy of imaging or detection of an object can be provided.

35. 发明申请

US20110255046A1 DISPLAY DEVICE AND ELECTRONIC BOOK 有权
标题翻译：显示设备和电子书
公开(公告)号：US20110255046A1
公开(公告)日：2011-10-20
申请号：US13085259
申请日：2011-04-12
申请人： Yoshiyuki Kurokawa , Takayuki Ikeda , Takeshi Aoki
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Takeshi Aoki
IPC分类号： G02F1/1343
CPC分类号： G02F1/13338 , G02F1/13318 , G02F1/1334 , G02F2001/13312 , G02F2001/133391 , G06F3/0412 , G06F3/042 , G09G3/3648 , G09G2360/142 , G09G2380/14
摘要： It is an object to provide a display device exhibiting high visibility and having a touch recognition function. The display device includes a display portion and a sensor portion. The display portion includes a first liquid crystal element including a polymer-scattered liquid crystal. The sensor portion includes a light-receiving element and a second liquid crystal element including a polymer-dispersed liquid crystal provided over the light-receiving element. The first liquid crystal element and the second liquid crystal element are driven independently from each other. The light-receiving element receives light transmitting through the second liquid crystal element.
摘要翻译：本发明的目的是提供具有高可见度并具有触摸识别功能的显示装置。显示装置包括显示部分和传感器部分。显示部分包括包含聚合物散射液晶的第一液晶元件。传感器部分包括光接收元件和设置在光接收元件上的聚合物分散液晶的第二液晶元件。第一液晶元件和第二液晶元件彼此独立地驱动。光接收元件接收透过第二液晶元件的光。

36. 发明授权

US08487745B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08487745B2
公开(公告)日：2013-07-16
申请号：US11948602
申请日：2007-11-30
申请人： Munehiro Kozuma , Yoshiyuki Kurokawa
发明人： Munehiro Kozuma , Yoshiyuki Kurokawa
IPC分类号： H04Q5/22
CPC分类号： H01M10/46 , H01M10/425 , H01M10/44
摘要： Communication performance of the wireless tag is improved by providing an SRAM provided with an RF battery in the wireless tag provided with a CPU to speed up the CPU system. Moreover, rewriting of data in a memory of a wireless tag provided with a CPU is enabled. An RF battery includes an antenna circuit, a power supply portion, and a power storage device. A function as a non-volatile memory is provided to an SRAM by combining the SRAM and an RF battery.
摘要翻译：通过在设置有CPU的无线标签中提供带有RF电池的SRAM来提高无线标签的通信性能，以加速CPU系统。此外，能够在设置有CPU的无线标签的存储器中重写数据。 RF电池包括天线电路，电源部分和蓄电装置。通过组合SRAM和RF电池，将SRAM作为非易失性存储器提供给SRAM。

37. 发明授权

US08472235B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08472235B2
公开(公告)日：2013-06-25
申请号：US13048291
申请日：2011-03-15
申请人： Munehiro Kozuma , Yoshiyuki Kurokawa
发明人： Munehiro Kozuma , Yoshiyuki Kurokawa
IPC分类号： G11C17/00
CPC分类号： G11C17/12 , H01L27/1225 , H01L29/7869
摘要： An object is reduction in power consumption of a semiconductor device including a memory circuit. In the semiconductor device including a memory circuit, the memory circuit includes a memory cell including a semiconductor element and a memory cell that does not include a semiconductor element in a region defined by a word line and a bit line which intersect with each other. A transistor formed using an oxide semiconductor so as to have extremely low off-state current is used as the semiconductor element, so that the reading precision is improved and thus low voltage operation can be performed. The memory cells store data high or data low. The memory cell comprising a semiconductor element stores minor data of high and low, and the memory cell that does not comprise the semiconductor element stores major data of high and low.
摘要翻译：目的在于减少包括存储电路的半导体器件的功耗。在包括存储器电路的半导体器件中，存储电路包括存储单元，该存储单元包括半导体元件和存储单元，该半导体元件和存储单元在由彼此相交的字线和位线所限定的区域中不包括半导体元件。使用以氧化物半导体形成为具有非常低的截止电流的晶体管作为半导体元件，从而提高读取精度，从而可以进行低电压工作。存储单元存储数据高或数据量低。包括半导体元件的存储单元存储高和低的次要数据，并且不包括半导体元件的存储单元存储高和低的主要数据。

38. 发明申请

US20110235389A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110235389A1
公开(公告)日：2011-09-29
申请号：US13048291
申请日：2011-03-15
申请人： Munehiro Kozuma , Yoshiyuki Kurokawa
发明人： Munehiro Kozuma , Yoshiyuki Kurokawa
IPC分类号： G11C17/12
CPC分类号： G11C17/12 , H01L27/1225 , H01L29/7869
摘要： An object is reduction in power consumption of a semiconductor device including a memory circuit. In the semiconductor device including a memory circuit, the memory circuit includes a memory cell including a semiconductor element and a memory cell that does not include a semiconductor element in a region defined by a word line and a bit line which intersect with each other. A transistor formed using an oxide semiconductor so as to have extremely low off-state current is used as the semiconductor element, so that the reading precision is improved and thus low voltage operation can be performed. The memory cells store data high or data low. The memory cell comprising a semiconductor element stores minor data of high and low, and the memory cell that does not comprise the semiconductor element stores major data of high and low.
摘要翻译：目的在于减少包括存储电路的半导体器件的功耗。在包括存储器电路的半导体器件中，存储电路包括存储单元，该存储单元包括半导体元件和存储单元，该半导体元件和存储单元在由彼此相交的字线和位线所限定的区域中不包括半导体元件。使用以氧化物半导体形成为具有非常低的截止电流的晶体管作为半导体元件，从而提高读取精度，从而可以进行低电压工作。存储单元存储数据高或数据量低。包括半导体元件的存储单元存储高和低的次要数据，并且不包括半导体元件的存储单元存储高和低的主要数据。

39. 发明申请

US20100118620A1 Semiconductor Device 有权
标题翻译：半导体器件
公开(公告)号：US20100118620A1
公开(公告)日：2010-05-13
申请号：US12687549
申请日：2010-01-14
申请人： Munehiro Kozuma , Yoshiyuki Kurokawa
发明人： Munehiro Kozuma , Yoshiyuki Kurokawa
IPC分类号： G11C7/10 , G11C7/00
CPC分类号： G11C17/12 , G11C7/12 , G11C16/0416 , H01L27/112 , H01L27/12 , H01L27/1214
摘要： A memory circuit includes a plurality of word lines, a plurality of bit lines, and a plurality of memory cells. Configurations of the plurality of memory cells are determined depending on the data (“high” or “low”) which is stored in the memory cells. Data array such as a program stored in the memory circuit is analyzed in advance. In the case where “high” is the majority data, memory cells storing “high” are formed with vacant cells in which a semiconductor element is not formed.
摘要翻译：存储电路包括多个字线，多个位线和多个存储单元。多个存储单元的配置根据存储在存储单元中的数据（“高”或“低”）来确定。预先分析诸如存储在存储器电路中的程序的数据阵列。在“高”是大部分数据的情况下，存储“高”的存储单元由不形成半导体元件的空格形成。

40. 发明授权

US08716712B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08716712B2
公开(公告)日：2014-05-06
申请号：US13027488
申请日：2011-02-15
申请人： Munehiro Kozuma , Yoshiyuki Kurokawa
发明人： Munehiro Kozuma , Yoshiyuki Kurokawa
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14607 , H01L27/14609
摘要： An object of the invention is to improve the accuracy of light detection in a photosensor, and to increase the light-receiving area of the photosensor. The photosensor includes: a light-receiving element which converts light into an electric signal; a first transistor which transfers the electric signal; and a second transistor which amplifies the electric signal. The light-receiving element includes a silicon semiconductor, and the first transistor includes an oxide semiconductor. The light-receiving element is a lateral-junction photodiode, and an n-region or a p-region included in the light-receiving element overlaps with the first transistor.
摘要翻译：本发明的目的是提高光传感器中光检测的精度，并增加光传感器的光接收面积。光传感器包括：将光转换成电信号的光接收元件; 传输电信号的第一晶体管; 以及放大电信号的第二晶体管。光接收元件包括硅半导体，并且第一晶体管包括氧化物半导体。光接收元件是横向结光电二极管，并且包含在光接收元件中的n区域或p区域与第一晶体管重叠。

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