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31. 发明授权

US07947561B2 Methods for oxidation of a semiconductor device 有权
标题翻译：氧化半导体器件的方法
公开(公告)号：US07947561B2
公开(公告)日：2011-05-24
申请号：US12401895
申请日：2009-03-11
申请人： Rajesh Mani , Norman Tam , Timothy W. Weidman , Yoshitaka Yokota
发明人： Rajesh Mani , Norman Tam , Timothy W. Weidman , Yoshitaka Yokota
IPC分类号： H01L21/00
CPC分类号： H01L21/31662 , H01L21/0223 , H01L21/02238 , H01L21/02244 , H01L21/02252 , H01L21/28273 , H01L21/31683 , H01L21/32105
摘要： Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.
摘要翻译：本文提供了在半导体衬底上制造氧化物层的方法。氧化物层可以形成在设置在基板上的整个结构上，或者选择性地形成在非金属含有层上，具有暴露的含金属层的很少或没有氧化。本文公开的方法可以在各种处理室中执行，包括但不限于去耦等离子体氧化室，快速和/或远程等离子体氧化室和/或等离子体浸入离子注入室。在一些实施方案中，方法可以包括提供包含含金属层和不含金属的层的基材; 以及通过将衬底暴露于由包含含氢气体，含氧气体和至少一种补充氧气的工艺气体形成的等离子体而在非含金属层的暴露表面上形成氧化物层，含有气体或含氮气体。

32. 发明申请

US20100330814A1 METHODS OF FORMING OXIDE LAYERS ON SUBSTRATES 有权
标题翻译：在基材上形成氧化层的方法
公开(公告)号：US20100330814A1
公开(公告)日：2010-12-30
申请号：US12820395
申请日：2010-06-22
申请人： Yoshitaka Yokota , Christopher S. Olsen , Agus Sofian Tjandra , Yonah Cho , Matthew S. Rogers
发明人： Yoshitaka Yokota , Christopher S. Olsen , Agus Sofian Tjandra , Yonah Cho , Matthew S. Rogers
IPC分类号： H01L21/314
CPC分类号： H01L21/3105
摘要： Methods for processing substrates are provided herein. In some embodiments, a method for processing a substrate includes providing a substrate having an oxide layer disposed thereon, the oxide layer including one or more defects; and exposing the oxide layer to a plasma formed from a process gas comprising an oxygen-containing gas to repair the one or more defects. In some embodiments, the oxide layer may be formed on the substrate. In some embodiments, forming the oxide layer further comprises depositing the oxide layer atop the substrate. In some embodiments, forming the oxide layer further comprises thermally oxidizing the surface of the substrate to form the oxide layer. In some embodiments, a processing temperature is maintained at about 700 degrees Celsius or below during the thermal oxidation of the surface.
摘要翻译：本文提供了处理基板的方法。在一些实施例中，用于处理衬底的方法包括提供其上设置有氧化物层的衬底，所述氧化物层包括一个或多个缺陷; 以及将所述氧化物层暴露于由包含含氧气体的工艺气体形成的等离子体，以修复所述一个或多个缺陷。在一些实施例中，氧化物层可以形成在衬底上。在一些实施例中，形成氧化物层还包括在衬底顶部沉积氧化物层。在一些实施例中，形成氧化物层还包括热氧化衬底的表面以形成氧化物层。在一些实施例中，在表面的热氧化期间，处理温度保持在约700摄氏度或更低。

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