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31. 发明授权

US07414285B2 Nonvolatile semiconductor memory device 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US07414285B2
公开(公告)日：2008-08-19
申请号：US11870793
申请日：2007-10-11
申请人： Hiroshi Akahori , Wakako Takeuchi , Yoshio Ozawa
发明人： Hiroshi Akahori , Wakako Takeuchi , Yoshio Ozawa
IPC分类号： H01L27/108
CPC分类号： H01L29/7881 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/513
摘要： A nonvolatile semiconductor memory device includes a first insulating film provided on a surface of a semiconductor substrate, a charge accumulation layer provided on the first insulating film, a second insulating film provided above the charge accumulation layer and contains silicon and nitrogen, a third insulating film provided on the second insulating film, and composed of a single-layer insulating film containing oxygen or a plural-layer stacked insulating film at least whose films on a top layer and a bottom layer contain oxygen, relative dielectric constant thereof being larger than it of a silicon oxide film, a fourth insulating film provided on the third insulating film and contains silicon and nitrogen, a control gate provided above the fourth insulating film, and a fifth insulating film provided between the charge accumulation layer and the second insulating film or between the fourth insulating film and the control gate, and contains silicon and oxygen.
摘要翻译：非易失性半导体存储器件包括设置在半导体衬底的表面上的第一绝缘膜，设置在第一绝缘膜上的电荷累积层，设置在电荷累积层上方并含有硅和氮的第二绝缘膜，第三绝缘膜设置在第二绝缘膜上，并且由包含氧的单层绝缘膜或至少其顶层和底层上的膜含有氧的多层堆叠绝缘膜组成，其相对介电常数大于氧化硅膜，设置在第三绝缘膜上并含有硅和氮的第四绝缘膜，设置在第四绝缘膜上方的控制栅极和设置在电荷累积层和第二绝缘膜之间的第五绝缘膜，第四绝缘膜和控制栅，并含有硅和氧。

32. 发明申请

US20080176389A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20080176389A1
公开(公告)日：2008-07-24
申请号：US12054089
申请日：2008-03-24
申请人： Masayuki Tanaka , Yoshio Ozawa , Hirokazu Ishida , Katsuaki Natori , Seiji Inumiya
发明人： Masayuki Tanaka , Yoshio Ozawa , Hirokazu Ishida , Katsuaki Natori , Seiji Inumiya
IPC分类号： H01L21/4763
CPC分类号： H01L29/7881 , G11C16/0483 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L29/42324 , H01L29/513
摘要： A semiconductor memory device includes a semiconductor substrate, an isolation insulation film filled in a plurality of trenches formed in the semiconductor substrate to define a plurality of element formation regions, a floating gate of polysilicon provided on each of the element formation regions through a first insulation film, a second insulation film, provided on the floating gate, containing a metal element, a control gate of polysilicon, provided on the second insulation film, and source/drain regions provided in the semiconductor substrate, both a polysilicon conductive layer containing a metal element and a mutual diffusion layer composed of a silicate layer of a mixed oxide material composed of a silicon element contained in the floating gate and the control gate and a metal element contained in the second insulation film are provided on a surface of each of the floating gate and the control gate, respectively.
摘要翻译：半导体存储器件包括半导体衬底，隔离绝缘膜，填充在形成于半导体衬底中的多个沟槽中，以限定多个元件形成区域;多晶硅浮置栅极，通过第一绝缘层设置在每个元件形成区域上; 设置在浮置栅极上的第二绝缘膜，包含设置在第二绝缘膜上的金属元件，多晶硅控制栅极和设置在半导体衬底中的源极/漏极区域，包含金属的多晶硅导电层元件和由浮置栅极中包含的硅元素和控制栅极组成的混合氧化物材料的硅酸盐层和包含在第二绝缘膜中的金属元素构成的互扩散层设置在每个浮动栅极的表面上门和控制门。

33. 发明申请

US20080087937A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US20080087937A1
公开(公告)日：2008-04-17
申请号：US11870793
申请日：2007-10-11
申请人： Hiroshi Akahori , Wakako Takeuchi , Yoshio Ozawa
发明人： Hiroshi Akahori , Wakako Takeuchi , Yoshio Ozawa
IPC分类号： H01L29/788
CPC分类号： H01L29/7881 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/513
摘要： A nonvolatile semiconductor memory device includes a first insulating film provided on a surface of a semiconductor substrate, a charge accumulation layer provided on the first insulating film, a second insulating film provided above the charge accumulation layer and contains silicon and nitrogen, a third insulating film provided on the second insulating film, and composed of a single-layer insulating film containing oxygen or a plural-layer stacked insulating film at least whose films on a top layer and a bottom layer contain oxygen, relative dielectric constant thereof being larger than it of a silicon oxide film, a fourth insulating film provided on the third insulating film and contains silicon and nitrogen, a control gate provided above the fourth insulating film, and a fifth insulating film provided between the charge accumulation layer and the second insulating film or between the fourth insulating film and the control gate, and contains silicon and oxygen.
摘要翻译：非易失性半导体存储器件包括设置在半导体衬底的表面上的第一绝缘膜，设置在第一绝缘膜上的电荷累积层，设置在电荷累积层上方并含有硅和氮的第二绝缘膜，第三绝缘膜设置在第二绝缘膜上，并且由包含氧的单层绝缘膜或至少其顶层和底层上的膜含有氧的多层堆叠绝缘膜组成，其相对介电常数大于氧化硅膜，设置在第三绝缘膜上并含有硅和氮的第四绝缘膜，设置在第四绝缘膜上方的控制栅极和设置在电荷累积层和第二绝缘膜之间的第五绝缘膜，第四绝缘膜和控制栅，并含有硅和氧。

34. 发明申请

US20070298594A1 Semiconductor device fabrication method 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：US20070298594A1
公开(公告)日：2007-12-27
申请号：US11806926
申请日：2007-06-05
申请人： Ichiro Mizushima , Kiyotaka Miyano , Katsuaki Natori , Yoshio Ozawa
发明人： Ichiro Mizushima , Kiyotaka Miyano , Katsuaki Natori , Yoshio Ozawa
IPC分类号： H01L21/36
CPC分类号： H01L27/11521 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02513 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/84 , H01L27/115 , H01L27/11524 , H01L27/1203 , H01L29/78
摘要： A semiconductor device fabrication method includes forming an insulating film having an opening on the major surface of single-crystal silicon, and forming an amorphous silicon film on the surface of the single-crystal silicon exposed in the opening and on the surface of the insulating film. The semiconductor device fabrication method further includes performing annealing to change the amorphous silicon film into a single crystal, and forming a single-crystal silicon film, SiGe film, or carbon-containing silicon film by vapor phase growth on a region where the amorphous silicon film is changed into a single crystal.
摘要翻译：一种半导体器件制造方法，包括在单晶硅的主表面上形成具有开口的绝缘膜，并在暴露于开口部和绝缘膜表面的单晶硅的表面上形成非晶硅膜。半导体器件制造方法还包括执行退火以将非晶硅膜改变为单晶，并且通过气相生长在非晶硅膜的区域上形成单晶硅膜，SiGe膜或含碳硅膜改为单晶。

35. 发明申请

US20070287254A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20070287254A1
公开(公告)日：2007-12-13
申请号：US11727536
申请日：2007-03-27
申请人： Katsuaki Natori , Masayuki Tanaka , Akihito Yamamoto , Katsuyuki Sekine , Ryota Fujitsuka , Daisuke Nishida , Yoshio Ozawa
发明人： Katsuaki Natori , Masayuki Tanaka , Akihito Yamamoto , Katsuyuki Sekine , Ryota Fujitsuka , Daisuke Nishida , Yoshio Ozawa
IPC分类号： H01L21/336
CPC分类号： H01L27/11568 , H01L27/115 , H01L27/11521
摘要： A method of manufacturing a semiconductor device comprising a first insulating film formed on a semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, wherein forming the second insulating film comprises forming an insulating film containing silicon using source gas not containing chlorine, and forming an insulating film containing oxygen and a metal element on the insulating film containing silicon.
摘要翻译：一种制造半导体器件的方法，包括形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的电荷存储层，形成在电荷存储层上的第二绝缘膜，以及形成在第二绝缘膜上的控制电极其中，形成所述第二绝缘膜包括使用不含氯的源气体形成含硅的绝缘膜，以及在含有硅的绝缘膜上形成含有氧和金属元素的绝缘膜。

36. 发明授权

US07306994B2 Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof 有权
标题翻译：具有包含含有金属，硅和氧的绝缘膜的栅极绝缘膜结构的半导体器件及其制造方法
公开(公告)号：US07306994B2
公开(公告)日：2007-12-11
申请号：US10915805
申请日：2004-08-11
申请人： Yoshitaka Tsunashima , Seiji Inumiya , Yasumasa Suizu , Yoshio Ozawa , Kiyotaka Miyano , Masayuki Tanaka
发明人： Yoshitaka Tsunashima , Seiji Inumiya , Yasumasa Suizu , Yoshio Ozawa , Kiyotaka Miyano , Masayuki Tanaka
IPC分类号： H01L21/8234
CPC分类号： H01L21/82345 , H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/31604 , H01L21/823462 , H01L21/823475 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545 , H01L29/6656
摘要： Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.
摘要翻译：权利要求和公开的是一种半导体器件，包括具有在包含金属，硅和氧的金属硅酸盐的化合物中含有氮或氟的栅极绝缘膜结构的晶体管，具有非晶态金属氧化物层叠结构的栅极绝缘膜结构膜和金属硅酸盐膜，或具有包括第一金属元素的氧化物膜的第一栅极绝缘膜和包括第二金属元素的金属硅酸盐膜的第二栅极绝缘膜的栅极绝缘膜结构。

37. 发明授权

US07303946B1 Method of manufacturing a semiconductor device using an oxidation process 失效
标题翻译：使用氧化工艺制造半导体器件的方法
公开(公告)号：US07303946B1
公开(公告)日：2007-12-04
申请号：US09559757
申请日：2000-04-27
申请人： Yoshio Ozawa , Yasumasa Suizu , Yoshitaka Tsunashima
发明人： Yoshio Ozawa , Yasumasa Suizu , Yoshitaka Tsunashima
IPC分类号： H01L21/00
CPC分类号： H01L29/7881 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02233 , H01L21/02271 , H01L21/28044 , H01L21/28202 , H01L21/28247 , H01L21/28273 , H01L21/3144 , H01L27/115 , H01L27/11521 , H01L29/518 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/66825 , H01L29/7833 , Y10S438/911 , Y10S438/942 , Y10S438/947 , Y10S438/966
摘要： A method of manufacturing a MOS transistor incorporating a silicon oxide film serving as a gate insulating film and containing nitrogen and a polycrystalline silicon film serving as a gate electrode and containing a dopant and arranged such that the gate electrode is formed on the gate electrode insulating film, and an oxidation process using ozone is performed to sufficiently round the shape of the lower edge of the gate electrode.
摘要翻译：一种制造包含用作栅极绝缘膜并含有氮的氧化硅膜和用作栅电极并含有掺杂剂的多晶硅膜的MOS晶体管的方法，其布置使得栅电极形成在栅电极绝缘膜上，并且进行使用臭氧的氧化处理以充分地绕着栅电极的下边缘的形状。

38. 发明授权

US07294878B2 Semiconductor memory device and method of manufacturing the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07294878B2
公开(公告)日：2007-11-13
申请号：US11088947
申请日：2005-03-25
申请人： Masayuki Tanaka , Yoshio Ozawa , Hirokazu Ishida , Katsuaki Natori , Seiji Inumiya
发明人： Masayuki Tanaka , Yoshio Ozawa , Hirokazu Ishida , Katsuaki Natori , Seiji Inumiya
IPC分类号： H01L27/108
CPC分类号： H01L29/7881 , G11C16/0483 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L29/42324 , H01L29/513
摘要： A semiconductor memory device includes a semiconductor substrate, an isolation insulation film filled in a plurality of trenches formed in the semiconductor substrate to define a plurality of element formation regions, a floating gate provided on each of the element formation regions through a first gate insulation film, a control gate provided on the floating gate through a second gate insulation film, and source/drain regions provided in the semiconductor substrate, wherein a mutual diffusion layer is provided at least at an interface between the second gate insulation film and the control gate.
摘要翻译：半导体存储器件包括半导体衬底，隔离绝缘膜，填充在形成于半导体衬底中的多个沟槽中以限定多个元件形成区域;浮置栅极，通过第一栅极绝缘膜设置在每个元件形成区域上，通过第二栅极绝缘膜设置在浮置栅极上的控制栅极和设置在半导体衬底中的源极/漏极区域，其中至少在第二栅极绝缘膜和控制栅极之间的界面处设置相互扩散层。

39. 发明申请

US20070241390A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070241390A1
公开(公告)日：2007-10-18
申请号：US11783952
申请日：2007-04-13
申请人： Masayuki Tanaka , Daisuke Nishida , Ryota Fujitsuka , Katsuyuki Sekine , Akihito Yamamoto , Katsuaki Natori , Yoshio Ozawa
发明人： Masayuki Tanaka , Daisuke Nishida , Ryota Fujitsuka , Katsuyuki Sekine , Akihito Yamamoto , Katsuaki Natori , Yoshio Ozawa
IPC分类号： H01L29/76
CPC分类号： H01L29/42324 , H01L27/115 , H01L27/11521 , H01L29/7883
摘要： A semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, the second insulating film including a lower silicon nitride film, a lower silicon oxide film formed on the lower silicon nitride film, an intermediate insulating film formed on the lower silicon oxide film and containing a metal element, the intermediate insulating film having a relative dielectric constant of greater than 7, an upper silicon oxide film formed on the intermediate insulating film, and an upper silicon nitride film formed on the upper silicon oxide film.
摘要翻译：半导体器件包括半导体衬底，形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的电荷存储层，形成在电荷存储层上的第二绝缘膜，以及形成在第二绝缘膜上的控制电极，所述第二绝缘膜包括下氮化硅膜，形成在所述下氮化硅膜上的下氧化硅膜，形成在所述下氧化硅膜上并含有金属元素的中间绝缘膜，所述中间绝缘膜具有相对电介质大于7的常数，形成在中间绝缘膜上的上部氧化硅膜和形成在上部氧化硅膜上的上部氮化硅膜。

40. 发明申请

US20070241389A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20070241389A1
公开(公告)日：2007-10-18
申请号：US11783934
申请日：2007-04-13
申请人： Yoshio Ozawa , Akihito Yamamoto , Masayuki Tanaka , Katsuaki Natori , Katsuyuki Sekine , Daisuke Nishida , Ryota Fujitsuka
发明人： Yoshio Ozawa , Akihito Yamamoto , Masayuki Tanaka , Katsuaki Natori , Katsuyuki Sekine , Daisuke Nishida , Ryota Fujitsuka
IPC分类号： H01L29/76
CPC分类号： H01L29/7883 , H01L27/115 , H01L27/11521 , H01L29/42324
摘要： A semiconductor device includes a semiconductor substrate, a plurality of nonvolatile memory cells provided on the semiconductor substrate, each of the plurality of nonvolatile memory cells comprising a first insulating film provided on the semiconductor substrate, a charge storage layer provided on the first insulating film, a control gate electrode provided above the charge storage layer, a second insulating film provided between the control gate electrode and the charge storage layer, the second insulating film between adjacent charge storage layers including a first region having permittivity lower than that of the second insulating film on a top surface of the charge storage layer in a cross-section view of a channel width direction of the nonvolatile memory cell, and the first region having composition differing from that of the second insulating film on the top surface of the charge storage layer.
摘要翻译：半导体器件包括半导体衬底，设置在半导体衬底上的多个非易失性存储单元，所述多个非易失性存储单元中的每一个包括设置在所述半导体衬底上的第一绝缘膜，设置在所述第一绝缘膜上的电荷存储层，设置在所述电荷存储层上方的控制栅电极，设置在所述控制栅电极和所述电荷存储层之间的第二绝缘膜，所述相邻电荷存储层之间的所述第二绝缘膜包括具有低于所述第二绝缘膜的介电常数的第一区域在电荷存储层的顶表面上，以非易失性存储单元的沟道宽度方向的横截面视图，并且第一区域具有与电荷存储层的顶表面上的第二绝缘膜不同的组成。

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